Vishay General Semiconductor - Diodes Division SM8S26A-001HE3_A/I
- Part No.:
- SM8S26A-001HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S26A-001HE3_A/I.pdf
- Description:
- TVS DIODE 26VWM DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,070
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Product details
Overview
SM8S26A-001HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in DO-218AB package, designed for automotive load dump protection with 26 V stand-off voltage, 30.4 V nominal breakdown voltage, and 6600 W peak pulse power (10/1000 μs). It operates from −55 °C to +175 °C and is AEC-Q101 qualified.
For engineers reviewing the SM8S26A-001HE3_A/I datasheet, SM8S26A-001HE3_A/I pinout, SM8S26A-001HE3_A/I application, or SM8S26A-001HE3_A/I equivalent, key selection criteria include clamping voltage (42.1 V at 157 A), low leakage (<10 μA at 26 V), high surge capability (700 A IFSM), and thermal resistance (RθJM = 0.35 °C/W) for robust under-hood deployment.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to deliver stable clamping performance across temperature extremes up to 175 °C junction. Its unidirectional polarity and heatsink-anode configuration enable direct mounting to metal chassis for enhanced thermal dissipation in automotive power rail protection.
It meets ISO 7637-2 surge test requirements for load dump transients and complies with J-STD-020 MSL Level 1 (245 °C reflow peak), supporting automated SMT assembly without moisture sensitivity concerns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 26 V - Maximum continuous reverse operating voltage before conduction begins; defines safe operating margin for 24 V automotive systems. |
| VBR (min/typ/max) | 28.9 / 30.4 / 31.9 V - Breakdown voltage range at 5 mA test current; ensures reliable triggering during overvoltage events. |
| VC @ IPPM | 42.1 V - Clamping voltage at 157 A peak pulse current (10/1000 μs); limits downstream component stress during transients. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling capacity; sustains high-energy load dump surges per ISO 7637-2. |
| IFSM | 700 A - Non-repetitive forward surge current rating (8.3 ms half-sine); supports repeated ignition coil switching events. |
| TJ max. | +175 °C - Maximum junction temperature; enables placement near hot engine compartments without derating. |
| RθJM | 0.35 °C/W - Junction-to-mount thermal resistance; allows efficient heat transfer to heatsink or PCB copper pour. |
Pinout & Package
Package: DO-218AB - Surface-mount, anode-heatsink configuration with matte tin-plated terminals, UL 94 V-0 molding compound, and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current entry point during clamping | Electrically and thermally connected to metal base; must be soldered to large copper area or chassis for optimal thermal performance. |
| Cathode (Lead 1) | Current exit point during clamping | Standard signal-side connection; routed to protected line (e.g., battery feed to ECU). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated reliability for automotive electronics including temperature cycling, humidity, and mechanical shock per automotive standards. |
| Junction passivation | Stable VBR drift < ±5 % over lifetime under high-temperature bias; critical for long-term protection integrity in engine control units. |
| Low leakage at 175 °C | <10 μA at VWM and TJ = 175 °C - minimizes standby power loss and avoids false triggering in hot-start conditions. |
| MSL Level 1 rating | Enables standard reflow profile (peak 245 °C) without baking; eliminates moisture-related popcorning during assembly. |
| ISO 7637-2 compliance | Validated against Pulse 5a (load dump) waveforms; provides design assurance for 12 V and 24 V vehicle platforms. |
Applications
| Engine Control Unit (ECU) Power Protection | Body Control Module (BCM) Input Protection |
|---|---|
Use Scenario: Protects microcontroller power rails from load dump transients generated by alternator field coil de-energization during battery disconnect. IC Role / Device Role / Timing Role: Unidirectional TVS clamps voltage spikes within 1 ns to limit rail excursion below 45 V. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V logic supplies while maintaining system uptime during harsh vehicle operation. |
Use Scenario: Shields BCM input lines (e.g., door lock actuator drivers) from inductive kickback when relays switch off. IC Role / Device Role / Timing Role: Fast-response transient suppressor absorbs energy from 100–500 mJ pulses without degradation. Use Value: Eliminates need for external snubbers or RC networks, reducing BOM count and PCB footprint in space-constrained modules. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Electric Power Steering (EPS) Motor Driver Protection |
Use Scenario: Safeguards image sensor and serializer ICs powered from vehicle battery via DC/DC converter in front-facing camera modules. IC Role / Device Role / Timing Role: Standoff voltage (26 V) aligns with 24 V system nominal; clamps transients before they propagate through LDOs. Use Value: Maintains uninterrupted video stream during cold-cranking and jump-start events where rail dips then surges. |
Use Scenario: Installed on H-bridge high-side driver supply rail to absorb back-EMF from brushed or BLDC motor commutation. IC Role / Device Role / Timing Role: High IFSM (700 A) withstands repetitive 10–50 A inductive surges during steering assist cycles. Use Value: Extends MOSFET lifetime by limiting VDS overshoot, reducing gate oxide stress and thermal runaway risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S26AHM3_A/I | Same electrical specs but with HM3 suffix: enhanced material set, improved high-temp leakage stability, and tighter VBR tolerance (±3.5 % vs ±5 %). | Preferred for new designs targeting extended life in >150 °C ambient environments (e.g., under-hood ADAS ECUs). | Select SM8S26AHM3_A/I if designing for production beyond 2026 or requiring tighter parametric consistency. |
| SMAJ26A | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher RθJA (110 °C/W), not AEC-Q101 qualified. | Limited to non-automotive, lower-energy applications such as industrial sensors or consumer power adapters. | Use SMAJ26A only for cost-sensitive, non-automotive designs where surge energy does not exceed 100 mJ. |
Compared with SM8S26A-001HE3_A/I, SM8S26AHM3_A/I offers improved long-term stability and tighter tolerances for next-generation automotive programs, while SMAJ26A trades robustness and qualification for compact size and lower cost in less demanding environments.
Availability
SM8S26A-001HE3_A/I is available at Aetrix Electronics and suitable for automotive ECU protection, body electronics, ADAS camera power conditioning, and EPS motor driver circuits requiring stable component supply across extended temperature ranges and high-reliability manufacturing.
Supply support for SM8S26A-001HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8SxxA family was engineered specifically for automotive load dump and ISO 7637-2 transient suppression, emphasizing high-temperature operation, AEC-Q101 compliance, and robust surge handling in DO-218AB packaging.
FAQ
What is the maximum clamping voltage of the SM8S26A-001HE3_A/I at its rated peak pulse current?
The SM8S26A-001HE3_A/I has a maximum clamping voltage (VC) of 42.1 V at 157 A peak pulse current (10/1000 μs waveform). This value is measured per standard test conditions in the Vishay datasheet (Document Number 88387, page 2) and defines the upper voltage limit imposed on protected circuitry during worst-case transients. The SM8S26A-001HE3_A/I maintains this clamping performance across its full operating temperature range.
Is the SM8S26A-001HE3_A/I suitable for new automotive designs?
No - the Vishay datasheet explicitly states "Not For New Designs" for the SM8S26A-001HE3_A/I, recommending SM8S26AHM3_A/I as the alternative. The SM8S26A-001HE3_A/I remains available for legacy program support and existing production, but new designs should use the HM3 variant for improved long-term reliability, tighter VBR tolerance, and updated material qualifications.
What does the "HE3_A/I" suffix indicate in SM8S26A-001HE3_A/I?
The "HE3_A/I" suffix denotes RoHS-compliant, halogen-free construction (E3), AEC-Q101 qualification (H), revision code A (first production release), and tape-and-reel packaging with anode orientation toward sprocket holes (I). The "001" indicates the specific device variant within the SM8S26A family, aligned with DO-218AB packaging and standard V-type termination.
How does the DO-218AB package of the SM8S26A-001HE3_A/I improve thermal performance compared to SMA or SMB packages?
The DO-218AB package features an integrated metal heatsink acting as the anode terminal, delivering RθJM = 0.35 °C/W - over 3× better than typical SMA packages (~110 °C/W). This allows the SM8S26A-001HE3_A/I to dissipate 6600 W surges more effectively when mounted to chassis or large copper areas, making it uniquely suited for high-power automotive transients where thermal management is critical.
Does the SM8S26A-001HE3_A/I meet ISO 7637-2 Pulse 5a requirements?
Yes - the SM8S26A-001HE3_A/I is specified to meet ISO 7637-2 surge requirements, including Pulse 5a (load dump), as confirmed in the Vishay datasheet (page 1, FEATURES section). Its 6600 W peak pulse power rating and 42.1 V clamping voltage ensure compliance when properly mounted with adequate thermal mass, enabling direct use in 12 V and 24 V vehicle platforms without additional external components.
SM8S26A-001HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26V
- Voltage - Breakdown (Min):
- 28.9V
- Voltage - Clamping (Max) @ Ipp:
- 42.1V
- Current - Peak Pulse (10/1000µs):
- 157A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S26A-001HE3_A/I FAQ
1.How can I place an order for SM8S26A-001HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S26A-001HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S26A-001HE3_A/I reliable?
The price and inventory of SM8S26A-001HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S26A-001HE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S26A-001HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S26A-001HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S26A-001HE3_A/I?
SM8S26A-001HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S26A-001HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S26A-001HE3_A/I?
For technical support, including SM8S26A-001HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S26A-001HE3_A/I requirements.
6.How does Aetrix verify that SM8S26A-001HE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S26A-001HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S26A-001HE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S26A-001HE3_A/I?
All SM8S26A-001HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S26A-001HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S26A-001HE3_A/I part is unused and in its original packaging.
Return procedure for SM8S26A-001HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S26A-001HE3_A/I Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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