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Vishay General Semiconductor - Diodes Division SM8S26AHE3_A/I

Part No.:
SM8S26AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixSM8S26AHE3_A/I.pdf
Description:
TVS DIODE 26VWM 42.1VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,114

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Product details

Overview

SM8S26AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection in 24 V systems. It features a 26 V stand-off voltage (VWM), 30.4 V nominal breakdown voltage (VBR), 42.1 V clamping voltage at 157 A peak pulse current, and 6600 W peak pulse power (10/1000 μs). Its DO-218AB package supports AEC-Q101 qualification and 175 °C junction operation.

For engineers reviewing the SM8S26AHE3_A/I datasheet, SM8S26AHE3_A/I pinout, SM8S26AHE3_A/I application, or SM8S26AHE3_A/I equivalent, key selection criteria include unidirectional polarity, ISO7637-2 compliance for load dump transients, low leakage (<10 μA at VWM), and thermal robustness under high-temperature automotive conditions.

Technical Context

The SM8S26AHE3_A/I employs passivated anisotropic rectifier technology to achieve stable breakdown characteristics up to TJ = 175 °C. Its junction passivation enables low leakage current (<10 μA at 26 V, 25 °C) and high reliability under thermal cycling stress typical of engine bay environments.

It delivers 6600 W peak pulse power with a 10/1000 μs waveform and clamps at 42.1 V when subjected to 157 A transient current - meeting ISO7637-2 surge requirements for 24 V automotive systems. The device uses a metal heatsink-anode configuration in DO-218AB, enabling efficient thermal transfer to PCB copper.

Key Specifications

ParameterValue and Actual Design Meaning
VWM26 V - maximum continuous reverse operating voltage before conduction begins; defines system operating margin in 24 V automotive circuits.
VBR (nom)30.4 V - nominal breakdown voltage at 5 mA test current; ensures reliable turn-on during load dump transients above battery regulation.
VC @ IPPM42.1 V - clamping voltage at 157 A peak pulse current; limits downstream IC voltage stress during 6600 W surges.
PPPM (10/1000 μs)6600 W - peak pulse power handling capability; supports harsh ISO7637-2 Load Dump Pulse 5a/b waveforms.
TJ max+175 °C - maximum junction temperature rating; enables placement near heat sources in under-hood ECUs without derating.
PolarityUnidirectional - anode connected to heatsink; requires correct orientation in series with protected line for forward-biased clamp path.
PackageDO-218AB - thermally enhanced surface-mount package with metal heatsink terminal; provides RθJM = 0.35 °C/W for direct PCB thermal coupling.

Pinout & Package

DO-218AB package with two terminals: Lead 1 (cathode) and Lead 2/metal heatsink (anode). The metal heatsink serves as both electrical anode connection and primary thermal path to PCB copper pour.

Pin/TerminalCircuit RoleDesign Meaning
Lead 1 (marked side)CathodeConnected to protected line (e.g., 24 V supply rail); conducts transient current toward anode/heatsink during overvoltage events.
Lead 2 / Metal HeatsinkAnodeElectrically and thermally tied to PCB ground plane or dedicated thermal pad; provides low-inductance return path and dominant heat dissipation route.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD47; required for engine control, body electronics, and ADAS modules.
Junction passivationStable VBR drift <±5 % over lifetime at 175 °C; prevents parametric shift due to moisture ingress or metallization degradation.
MSL Level 1Reflow-compatible up to 245 °C peak without popcorn failure; eliminates pre-bake requirement for standard SMT assembly.
Low leakage ID<10 μA at 26 V and 25 °C; minimizes standby power loss in always-on vehicle networks (e.g., CAN wake-up lines).
ISO7637-2 compliantWithstands 10 ms exponential load dump pulses up to 6600 W; protects against alternator-induced transients in 24 V commercial vehicles.

Applications

Engine Control Unit (ECU) Power Input ProtectionCommercial Vehicle Telematics Module

Use Scenario: Protects 24 V input stage of diesel engine ECU from alternator load dump transients during battery disconnect or regulator failure.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery feed and DC-DC converter input; clamps within nanoseconds to limit voltage to <43 V.

Use Value: Prevents latch-up or permanent damage to buck controller ICs rated for 45 V absolute maximum, ensuring functional safety compliance (ISO 26262 ASIL-B).

Use Scenario: Shields LTE/GNSS module power rail in fleet management telematics unit exposed to 24 V truck electrical systems.

IC Role / Device Role / Timing Role: Primary surge suppression on main 24 V input prior to point-of-load regulators; coordinates with secondary TVS for fast/slow transient filtering.

Use Value: Maintains module uptime during repeated load dump events in long-haul applications, avoiding field returns due to power-stage MOSFET failure.

Truck Body Control Module (BCM)Off-Highway Equipment Battery Management

Use Scenario: Safeguards microcontroller I/O and LIN bus transceivers in cab-mounted BCM subjected to cranking and switching noise.

IC Role / Device Role / Timing Role: Localized TVS on each switched 24 V output driver; placed adjacent to power FET source to minimize loop inductance.

Use Value: Enables robust 100 k-cycle relay drive life by suppressing inductive kickback spikes that would otherwise degrade gate oxide integrity.

Use Scenario: Protects BMS analog front-end (AFE) and cell monitor ICs in battery packs for construction equipment operating in extreme ambient temperatures.

IC Role / Device Role / Timing Role: High-temperature-stable TVS on pack voltage sense line; operates continuously at TJ ≥ 150 °C during summer operation.

Use Value: Guarantees measurement accuracy by preventing transient-induced offset errors in ±1 mV precision ADC inputs, even after 1000+ surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SM8S26AHM3_A/ISame electrical specs and DO-218AB package; HM3 suffix indicates halogen-free, RoHS-compliant, and AEC-Q101 qualified variant with updated material content.No functional difference; intended as direct replacement for HE3-series in new designs where updated environmental compliance is required.Select SM8S26AHM3_A/I for new designs requiring latest Vishay material categorization (per doc#99912) and halogen-free certification.
SMAJ26ALower PPPM (400 W vs. 6600 W), smaller SMA package (RθJA = 110 °C/W vs. 55 °C/W), and lower TJ max (150 °C vs. 175 °C).Only suitable for low-energy transients (e.g., ESD, small inductive spikes); not rated for ISO7637-2 load dump in 24 V systems.Use SMAJ26A only in non-automotive, low-power industrial controls where surge energy is below 100 mJ.

Compared with SM8S26AHE3_A/I, SM8S26AHM3_A/I offers identical protection performance with updated environmental compliance, while SMAJ26A lacks the thermal robustness and surge capacity needed for automotive load dump - making SM8S26AHE3_A/I the sole viable option for under-hood 24 V transient suppression.

Availability

SM8S26AHE3_A/I is available at Aetrix Electronics and suitable for automotive engine control units, commercial vehicle telematics modules, and off-highway equipment battery management systems requiring stable component supply across extended temperature and surge stress conditions.

Supply support for SM8S26AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs for automotive, industrial, and computing markets.

The SM8SxxA family is engineered specifically for high-energy automotive transient suppression, with emphasis on ISO7637-2 load dump immunity, AEC-Q101 reliability, and 175 °C thermal endurance in under-hood environments.

FAQ

What is the maximum clamping voltage of the SM8S26AHE3_A/I at its rated peak pulse current?

The SM8S26AHE3_A/I has a maximum clamping voltage (VC) of 42.1 V when subjected to its rated peak pulse current of 157 A using a 10/1000 μs waveform. This value is measured per JEDEC standards and ensures downstream components see no more than 42.1 V during worst-case surge events. The SM8S26AHE3_A/I maintains this clamping performance across its full operating temperature range from −55 °C to +175 °C.

Is the SM8S26AHE3_A/I suitable for 24 V automotive load dump protection per ISO7637-2?

Yes, the SM8S26AHE3_A/I is explicitly designed and tested to meet ISO7637-2 load dump requirements for 24 V systems. Its 6600 W peak pulse power rating (10/1000 μs), 42.1 V clamping voltage, and 175 °C junction rating enable it to safely absorb and dissipate the energy of Pulse 5a/b transients. The SM8S26AHE3_A/I is AEC-Q101 qualified and referenced in Vishay's application guidance for under-hood transient suppression.

What does the "HE3" suffix indicate in SM8S26AHE3_A/I?

The "HE3" suffix in SM8S26AHE3_A/I denotes RoHS-compliant, halogen-free construction with matte tin-plated leads that meet J-STD-002 and JESD 22-B102 solderability standards. The "H" confirms AEC-Q101 qualification, and "E3" specifies non-halogen-free, lead-free termination. The "A/I" indicates packaging in 13-inch tape-and-reel with anode orientation toward sprocket holes.

How does the DO-218AB package of the SM8S26AHE3_A/I improve thermal performance compared to SMA or SMB packages?

The DO-218AB package of the SM8S26AHE3_A/I integrates a large metal heatsink as the anode terminal, achieving RθJM = 0.35 °C/W - over 3× better than SMAJ's RθJA of 110 °C/W. This allows the SM8S26AHE3_A/I to sustain 6600 W surges without exceeding TJ = 175 °C when mounted on ≥2 oz. copper. Standard SMA/SMB packages lack this thermal mass and direct heatsink interface, limiting them to ≤400 W ratings.

Can the SM8S26AHE3_A/I be used in bidirectional configurations?

No, the SM8S26AHE3_A/I is unidirectional only, with polarity defined by cathode (Lead 1) and anode/heatsink (Lead 2). It conducts only when the cathode is positive relative to the anode. For bidirectional protection, two SM8S26AHE3_A/I devices must be connected in series opposition - but this configuration is not recommended due to mismatched VBR and increased footprint. Use a purpose-built bidirectional TVS like SMAJ26CA instead.

SM8S26AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
26V
Voltage - Breakdown (Min):
28.9V
Voltage - Clamping (Max) @ Ipp:
42.1V
Current - Peak Pulse (10/1000µs):
157A
Power - Peak Pulse:
6600W (6.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

SM8S26AHE3_A/I FAQ

1.How can I place an order for SM8S26AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SM8S26AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM8S26AHE3_A/I reliable?

The price and inventory of SM8S26AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S26AHE3_A/I is usually 5 days.

3.What payment methods are accepted for SM8S26AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S26AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM8S26AHE3_A/I?

SM8S26AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM8S26AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM8S26AHE3_A/I?

For technical support, including SM8S26AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S26AHE3_A/I requirements.

6.How does Aetrix verify that SM8S26AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SM8S26AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S26AHE3_A/I meets industry standards.

7.What is the process for return or replacement of SM8S26AHE3_A/I?

All SM8S26AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S26AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM8S26AHE3_A/I part is unused and in its original packaging.

Return procedure for SM8S26AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM8S26AHE3_A/I Tags

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