Vishay General Semiconductor - Diodes Division SM8S30AHE3/2D
- Part No.:
- SM8S30AHE3/2D
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S30AHE3/2D.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:6,763
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Product details
Overview
SM8S30AHE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor designed for automotive load dump protection in 12 V systems. It features a 33.3 V minimum breakdown voltage (VBR), 48.4 V maximum clamping voltage (VC) at 136 A peak pulse current, and 6600 W peak pulse power (10/1000 μs), operating up to TJ = 175 °C.
For engineers reviewing the SM8S30AHE3/2D datasheet, SM8S30AHE3/2D pinout, SM8S30AHE3/2D application, or SM8S30AHE3/2D equivalent, key selection criteria include unidirectional polarity, DO-218AB package thermal performance (RθJC = 0.90 °C/W), AEC-Q101 qualification, and ISO7637-2 compliance for automotive transients.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low leakage (≤10 μA at VWM = 30 V). Its unidirectional configuration places the heatsink as the anode terminal, enabling direct mounting to PCB copper for efficient thermal dissipation under repetitive surge conditions.
The device delivers 6600 W peak pulse power with 10/1000 μs waveform and sustains 5200 W with 10/10 000 μs waveform - critical for load dump events per ISO7637-2. Its 175 °C junction rating and MSL Level 1 qualification support reflow soldering at 245 °C peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 33.3 V / 36.8 V - ensures reliable triggering above 12 V system nominal and tolerance margins |
| VWM | 30.0 V - maximum continuous reverse stand-off voltage compatible with 24 V automotive systems |
| VC @ IPPM | 48.4 V - clamps transients below IC damage thresholds during 136 A surges |
| PPPM (10/1000 μs) | 6600 W - handles severe load dump energy without failure |
| TJ max. | 175 °C - supports operation in engine bay environments with minimal derating |
| RθJC | 0.90 °C/W - enables effective heat transfer to heatsink or large copper pour |
| AEC-Q101 | Qualified - meets stress test requirements for automotive electronic components |
Pinout & Package
Package: DO-218AB - surface-mount, anode-heatsink configuration with matte tin-plated leads; meets UL 94 V-0, JESD 201 Class 2 whisker resistance, and J-STD-002 solderability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit node; carries surge current into device during overvoltage |
| Lead 2 / Metal Heatsink | Anode | Primary thermal path and electrical return; must be soldered to large copper area for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Passivated anisotropic rectifier technology | Enables stable VBR and low leakage (<10 μA) across temperature and lifetime |
| DO-218AB package with metal heatsink | Provides 0.90 °C/W thermal resistance and mechanical robustness for under-hood mounting |
| ISO7637-2 compliance | Validated for load dump waveforms, supporting design-in without additional transient validation |
| MSL Level 1, 245 °C peak reflow | Permits standard lead-free SMT assembly without moisture sensitivity concerns |
| Uni-directional polarity only | Simplifies layout and eliminates reverse-bias leakage risk in DC-biased protection paths |
Applications
| Automotive Load Dump Protection | 12 V/24 V Power Rail Clamping |
|---|---|
Use Scenario: Protecting ECUs, body control modules, and infotainment systems from alternator load dump transients in passenger vehicles and commercial trucks. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed across battery input rail to clamp voltage spikes to ≤48.4 V. Use Value: Prevents latch-up or permanent damage to downstream 36 V-rated regulators and microcontrollers during 12 V system load dump events. | Use Scenario: Safeguarding power distribution networks in industrial control panels where 24 V DC supplies interface with PLC I/O modules. IC Role / Device Role / Timing Role: Standby overvoltage protector on main 24 V bus, activated only during fault conditions exceeding 30 V. Use Value: Maintains system uptime by absorbing >6 kW surge energy without degradation, eliminating need for sacrificial fusing. |
| Engine Control Unit Input Protection | Aftermarket Automotive Electronics |
Use Scenario: Shielding sensor signal conditioning circuits and CAN transceivers from coupled transients induced by fuel pump or injector switching. IC Role / Device Role / Timing Role: Localized TVS at ECU connector entry point, leveraging DO-218AB's low-inductance anode-heatsink path. Use Value: Reduces electromagnetic coupling into analog front-ends, preserving signal integrity for oxygen and knock sensors. | Use Scenario: Hardening dash cams, GPS trackers, and telematics units against jump-start surges and battery reversal risks. IC Role / Device Role / Timing Role: Primary overvoltage clamp on input stage, rated for repeated 136 A pulses without parameter shift. Use Value: Extends field life beyond 10 years in unattended deployments by maintaining VC stability after 1000+ surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A-E3/5AT | Lower PPPM (400 W), SMA package, RθJC ≈ 45 °C/W, no AEC-Q101 qualification | Not suitable for automotive load dump; limited to low-energy board-level ESD | Select only for cost-sensitive non-automotive industrial controls with <500 W surge exposure |
| TPSMD30A | Same DO-218AB package, 33.3–36.8 V VBR, but lower VC = 48.0 V and PPPM = 6600 W; AEC-Q101 qualified | Functionally interchangeable for load dump; minor VC reduction improves margin for 36 V ICs | Prefer when tighter clamping is required and supply chain diversification is needed |
Compared with SMAJ30A-E3/5AT and TPSMD30A, the SM8S30AHE3/2D offers superior thermal performance (RθJC = 0.90 °C/W vs. ~45 °C/W or ~1.1 °C/W), making it uniquely capable of sustaining repeated high-energy load dump events in confined engine bay layouts without thermal runaway.
Availability
SM8S30AHE3/2D is available at Aetrix Electronics and suitable for automotive electronics, industrial power supplies, and transportation control systems requiring stable component supply with AEC-Q101 assurance and long-term production continuity.
Supply support for SM8S30AHE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, thermal performance, and automotive-grade qualification.
The SM8SxxA series is engineered specifically for high-energy automotive load dump suppression, combining DO-218AB's thermal superiority with AEC-Q101 stress testing to meet stringent OEM requirements for under-hood electronics.
FAQ
What is the clamping voltage of the SM8S30AHE3/2D at its rated peak pulse current?
The SM8S30AHE3/2D has a maximum clamping voltage (VC) of 48.4 V at its rated peak pulse current (IPPM) of 136 A with a 10/1000 μs waveform. This value is measured under standardized test conditions per the Vishay datasheet and defines the upper voltage limit imposed on protected circuitry during worst-case surge events. The SM8S30AHE3/2D maintains this clamping performance across its full operating temperature range.
Is the SM8S30AHE3/2D suitable for 24 V automotive systems?
Yes, the SM8S30AHE3/2D is suitable for 24 V automotive systems. Its 30.0 V stand-off voltage (VWM) provides adequate margin above nominal 24 V rails, while its 33.3–36.8 V breakdown range ensures reliable activation during load dump transients. The device is AEC-Q101 qualified and meets ISO7637-2 requirements, confirming its suitability for under-hood deployment in commercial vehicle electronics where SM8S30AHE3/2D operates reliably up to 175 °C junction temperature.
What does the "HE3/2D" suffix indicate in SM8S30AHE3/2D?
The "HE3" suffix denotes RoHS-compliant construction and AEC-Q101 qualification, with matte tin-plated leads meeting JESD 201 Class 2 whisker resistance. The "/2D" indicates packaging in 13-inch plastic tape and reel, with 750 units per reel and anode orientation toward the sprocket hole - a standard delivery format for automated SMT placement. This exact configuration is documented in the Vishay ordering information table for SM8S30AHE3/2D.
How does the DO-218AB package of the SM8S30AHE3/2D improve thermal performance compared to SMA or SMB packages?
The DO-218AB package of the SM8S30AHE3/2D achieves a typical junction-to-case thermal resistance (RθJC) of 0.90 °C/W, significantly lower than SMA (≈45 °C/W) or SMB (≈25 °C/W) packages. This is enabled by its integrated metal heatsink terminal (anode), which allows direct thermal conduction to PCB copper. As a result, the SM8S30AHE3/2D sustains 6600 W surges without thermal runaway - a capability unattainable with smaller-outline alternatives.
Does the SM8S30AHE3/2D meet ISO7637-2 requirements for automotive load dump?
Yes, the SM8S30AHE3/2D meets ISO7637-2 surge specification for load dump testing, as explicitly stated in the Vishay datasheet. Its 6600 W peak pulse power rating (10/1000 μs) and 5200 W rating (10/10 000 μs) align with the energy demands of Pulse 5a and 5b waveforms. The device's 175 °C junction rating and AEC-Q101 qualification further validate its readiness for real-world automotive deployment where SM8S30AHE3/2D is routinely specified for ECU and BCM protection.
SM8S30AHE3/2D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 136A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S30AHE3/2D FAQ
1.How can I place an order for SM8S30AHE3/2D through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S30AHE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S30AHE3/2D reliable?
The price and inventory of SM8S30AHE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S30AHE3/2D is usually 5 days.
3.What payment methods are accepted for SM8S30AHE3/2D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S30AHE3/2D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S30AHE3/2D?
SM8S30AHE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S30AHE3/2D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S30AHE3/2D?
For technical support, including SM8S30AHE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S30AHE3/2D requirements.
6.How does Aetrix verify that SM8S30AHE3/2D is sourced from the original manufacturer or authorized distributors?
All SM8S30AHE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S30AHE3/2D meets industry standards.
7.What is the process for return or replacement of SM8S30AHE3/2D?
All SM8S30AHE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM8S30AHE3/2D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S30AHE3/2D part is unused and in its original packaging.
Return procedure for SM8S30AHE3/2D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S30AHE3/2D Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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