Vishay General Semiconductor - Diodes Division SM8S30AHE3_A/I
- Part No.:
- SM8S30AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S30AHE3_A/I.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO218AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SM8S30AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in DO-218AB package, rated for 30 V stand-off voltage (VWM), 35.1 V nominal breakdown (VBR), and 6600 W peak pulse power (10/1000 μs). It delivers AEC-Q101 qualification, 175 °C junction capability, and low leakage (<10 μA at VWM), designed specifically for automotive load dump protection in engine control units and body electronics.
For engineers reviewing the SM8S30AHE3_A/I datasheet, SM8S30AHE3_A/I pinout, SM8S30AHE3_A/I application, or SM8S30AHE3_A/I equivalent, key selection criteria include clamping voltage (48.4 V at IPPM), thermal resistance (RθJM = 0.35 °C/W), unidirectional polarity with heatsink-as-anode configuration, and compliance with ISO7637-2 surge testing under automotive conditions.
Technical Context
The SM8S30AHE3_A/I employs passivated anisotropic rectifier technology to achieve stable breakdown behavior up to TJ = 175 °C, enabling operation in under-hood automotive environments. Its DO-218AB package integrates a metal heatsink as the anode terminal, providing low thermal resistance (0.35 °C/W junction-to-mount) and high surge robustness (IPPM = 136 A, 10/1000 μs).
It meets MSL Level 1 per J-STD-020 (peak reflow 245 °C), features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, and passes JESD 201 Class 2 whisker testing. The device is RoHS-compliant, halogen-free (E3 suffix), and qualified per AEC-Q101 for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse operating voltage before clamping begins; defines system bus tolerance margin. |
| VBR (nom) | 35.1 V - Breakdown voltage at 5 mA test current; ensures precise overvoltage triggering during transients. |
| VC @ IPPM | 48.4 V - Clamping voltage at 136 A peak pulse; limits downstream IC stress during load dump events. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling; supports ISO7637-2 Pulse 5a/b load dump waveforms. |
| TJ max | 175 °C - Maximum junction temperature; enables placement near high-heat sources like powertrain ECUs. |
| RθJM | 0.35 °C/W - Junction-to-mount thermal resistance; allows direct heatsink mounting for sustained power dissipation. |
| ID @ VWM | <10 μA - Reverse leakage at 30 V; minimizes quiescent current drain in always-on vehicle modules. |
Pinout & Package
Package: DO-218AB - Surface-mount, anode-heatsink configuration with molded UL 94 V-0 compound; terminals are matte tin-plated, solderable per J-STD-002.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Heatsink | Current entry point during clamping; thermally conductive base | Must be soldered to large copper area or external heatsink to maintain RθJM = 0.35 °C/W and sustain 8 W steady-state dissipation. |
| Cathode | Current exit point during clamping; signal-side connection | Connected to protected line (e.g., 12 V battery rail); defines unidirectional clamping direction from cathode to anode. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use across -55 °C to +175 °C, including temperature cycling, HTRB, and ESD testing per stress test plan. |
| Junction passivation | Optimized anisotropic rectifier process ensures stable VBR drift <±5 % over lifetime and temperature. |
| ISO7637-2 compliance | Withstands defined load dump surges (Pulse 5a/b) without degradation when mounted per recommended footprint. |
| MSL Level 1 rating | Supports standard SMT reflow profiles up to 245 °C peak, eliminating moisture sensitivity handling requirements. |
| Heatsink-as-anode architecture | Enables direct thermal path from junction to PCB copper or chassis, critical for high-energy transient energy dissipation. |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Rail Protection |
|---|---|
Use Scenario: Protects microcontroller power supply against 12 V battery line transients during alternator load dump (ISO7637-2 Pulse 5). IC Role / Device Role / Timing Role: Unidirectional TVS diode clamping positive-going surges on main 12 V input rail. Use Value: Limits clamped voltage to 48.4 V, ensuring downstream LDOs and MCU IO remain within absolute maximum ratings during 6600 W surge events. |
Use Scenario: Shields CAN transceivers and sensor interfaces from switching noise and relay-induced spikes in door module or lighting control. IC Role / Device Role / Timing Role: Fast-response transient suppressor on fused 12 V distribution rail feeding multiple low-power subsystems. Use Value: Sub-10 μA leakage preserves sleep-mode current budget; 175 °C rating supports placement near interior lamp drivers. |
| Advanced Driver Assistance System (ADAS) Camera Power Supply | Electric Power Steering (EPS) Motor Driver Protection |
Use Scenario: Guards image sensor and SerDes power inputs against ignition transients and EMI coupling in front-facing camera modules. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 5 V or 3.3 V DC-DC output stage, placed adjacent to regulator. Use Value: Low capacitance (typ. ~200 pF at VWM) avoids signal integrity impact on high-speed video links; AEC-Q101 ensures field reliability. |
Use Scenario: Absorbs inductive kickback from H-bridge motor windings during PWM commutation and fault shutdown. IC Role / Device Role / Timing Role: High-surge-capability TVS connected between motor phase outputs and ground or supply rail. Use Value: 136 A peak pulse current rating handles repetitive 10/1000 μs surges common in EPS motor control; DO-218AB mechanical robustness resists vibration fatigue. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S30AHM3_A/I | Same electrical specs and DO-218AB package; HM3 suffix indicates enhanced material set with improved long-term humidity resistance (JESD22-A110) and extended lifetime under bias at high temperature. | Preferred for new designs targeting >15-year automotive service life or high-humidity under-hood zones (e.g., turbocharger-mounted sensors). | Select SM8S30AHM3_A/I for new designs requiring extended reliability validation beyond AEC-Q101 baseline. |
| SMAJ30A | Lower PPPM (400 W vs. 6600 W), SMA package (DO-214AC), higher RθJA (65 °C/W), no AEC-Q101 qualification. | Limited to non-automotive industrial or consumer applications with lower surge severity and ambient temperature constraints. | Use SMAJ30A only in cost-sensitive, non-automotive systems where ISO7637-2 compliance and 175 °C operation are not required. |
Compared with SM8S30AHE3_A/I, SM8S30AHM3_A/I offers identical clamping performance but superior long-term stability under humidity and bias stress, while SMAJ30A provides basic TVS functionality at lower surge capacity and without automotive qualification-making it unsuitable for load dump protection in modern vehicles.
Availability
SM8S30AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECU power protection, body electronics surge suppression, and ADAS camera power conditioning requiring stable component supply across multi-year production cycles.
Supply support for SM8S30AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8S series is engineered for automotive-grade transient suppression, with emphasis on high-temperature operation, ISO7637-2 compliance, and mechanical robustness in harsh under-hood environments.
FAQ
What is the clamping voltage of SM8S30AHE3_A/I at its rated peak pulse current?
The SM8S30AHE3_A/I has a maximum clamping voltage (VC) of 48.4 V when subjected to its peak pulse current (IPPM) of 136 A under the 10/1000 μs waveform. This value is measured per JEDEC standards and guarantees that downstream circuitry remains within safe voltage limits during standardized automotive load dump events. The SM8S30AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is SM8S30AHE3_A/I suitable for new automotive designs despite the "Not For New Designs" note in Vishay documentation?
The "Not For New Designs" designation applies to the entire SM8SxxA family relative to newer alternatives like SM8SxxAHM3, but SM8S30AHE3_A/I remains fully qualified, in active production, and supported by Vishay for legacy program continuity. It retains AEC-Q101 qualification, ISO7637-2 compliance, and full datasheet specifications. For new designs, SM8S30AHM3_A/I is preferred-but SM8S30AHE3_A/I is appropriate where existing qualification or supply chain alignment requires it.
How does the DO-218AB package of SM8S30AHE3_A/I improve thermal performance compared to SMA or SMB packages?
The DO-218AB package of SM8S30AHE3_A/I integrates a metal heatsink as the anode terminal, achieving a junction-to-mount thermal resistance (RθJM) of just 0.35 °C/W-over 10× better than typical SMA packages (~5–10 °C/W). This enables direct thermal coupling to PCB copper or external heatsinks, sustaining higher average power dissipation and improving reliability during repetitive surge events. The SM8S30AHE3_A/I leverages this architecture to deliver 6600 W peak pulse power without thermal runaway.
Does SM8S30AHE3_A/I meet ISO7637-2 Pulse 5a and 5b requirements out-of-the-box?
Yes-SM8S30AHE3_A/I is explicitly validated to meet ISO7637-2 Pulse 5a (12 V system, 100 V/10 ms exponential) and Pulse 5b (24 V system, 200 V/10 ms exponential) when mounted per Vishay's recommended footprint and thermal layout. Its 6600 W PPPM rating and 48.4 V clamping voltage ensure compliance without additional external components. The SM8S30AHE3_A/I datasheet includes load dump power curves confirming performance up to 175 °C initial junction temperature.
What is the meaning of the "HE3_A/I" suffix in SM8S30AHE3_A/I?
In SM8S30AHE3_A/I, "H" denotes AEC-Q101 qualification, "E3" indicates RoHS-compliant, halogen-free, lead-free termination, "A" specifies ±5 % breakdown voltage tolerance and unidirectional polarity, and "I" identifies the preferred tape-and-reel packaging format (750 pcs/reel, anode toward sprocket hole). The "_A/I" suffix confirms full automotive-grade material and assembly traceability. This exact suffix appears in Vishay's official ordering table for SM8S30AHE3_A/I.
SM8S30AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 136A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S30AHE3_A/I FAQ
1.How can I place an order for SM8S30AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S30AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S30AHE3_A/I reliable?
The price and inventory of SM8S30AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S30AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S30AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S30AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S30AHE3_A/I?
SM8S30AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S30AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S30AHE3_A/I?
For technical support, including SM8S30AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S30AHE3_A/I requirements.
6.How does Aetrix verify that SM8S30AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S30AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S30AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S30AHE3_A/I?
All SM8S30AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S30AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S30AHE3_A/I part is unused and in its original packaging.
Return procedure for SM8S30AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S30AHE3_A/I Tags

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Toshiba Semiconductor and Storage

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