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Vishay General Semiconductor - Diodes Division SM8S30AHE3_A/K
- Part No.:
- SM8S30AHE3_A/K
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S30AHE3_A/K.pdf
- Description:
- TVS DIODE 30VWM DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,771
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Product details
Overview
SM8S30AHE3_A/K from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in DO-218AB package, rated for 30 V stand-off voltage (VWM), 35.1 V nominal breakdown (VBR), 48.4 V clamping voltage at 136 A peak pulse current, and 6600 W peak pulse power (10/1000 μs). It is AEC-Q101 qualified and designed for automotive load dump protection.
For engineers reviewing the SM8S30AHE3_A/K datasheet, SM8S30AHE3_A/K pinout, SM8S30AHE3_A/K application, or SM8S30AHE3_A/K equivalent, this page delivers verified electrical parameters, thermal performance at TJ = 175 °C, unidirectional polarity mapping, and direct alternative part guidance for legacy design continuity and high-reliability automotive circuit protection.
Technical Context
The SM8S30AHE3_A/K employs passivated anisotropic rectifier technology to achieve low leakage (<10 μA at VWM) and low forward voltage drop (≤1.8 V at 100 A), enabling robust clamping during fast transients. Its DO-218AB package features a metal heatsink anode configuration and meets MSL Level 1 with 245 °C lead-free reflow compatibility.
It is explicitly rated for ISO7637-2 surge compliance under defined test conditions and supports junction temperatures up to +175 °C - critical for under-hood automotive environments. Thermal resistance junction-to-mount (RθJM) is 0.35 °C/W, confirming efficient heat transfer to PCB copper or external heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR (nom) | 35.1 V - guaranteed breakdown voltage at 5 mA test current, defining precise turn-on threshold |
| VC @ IPPM | 48.4 V - clamping voltage at 136 A peak pulse current, limiting downstream voltage stress |
| PPPM (10/1000 μs) | 6600 W - surge energy handling capability for automotive load dump and inductive switching events |
| TJ max | +175 °C - extended junction temperature rating enabling operation in high-ambient engine bay locations |
| IFSM | 700 A - non-repetitive forward surge current tolerance, supporting high-energy fault clearing |
| Polarity | Unidirectional - anode-connected heatsink configuration, requiring correct PCB orientation |
Pinout & Package
Package: DO-218AB - surface-mount, anode-heatsink case with matte tin-plated terminals, UL 94 V-0 molding compound, JESD201 Class 2 whisker resistant, RoHS-compliant and AEC-Q101 qualified.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current entry / thermal path | Electrically and thermally connected to metal base; must be routed to large copper pour or heatsink for RθJM = 0.35 °C/W performance |
| Cathode (Lead 1) | Clamped output node | Connected to protected line (e.g., 12 V rail); carries full surge current during clamping event |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Enables stable VBR over lifetime and temperature, reducing parameter drift in automotive duty cycles |
| TJ = 175 °C operation | Supports placement near high-temperature sources (e.g., ECUs, power modules) without derating |
| Low leakage current (<10 μA at VWM) | Minimizes standby power loss in always-on vehicle networks (e.g., CAN wake-up lines) |
| Meets ISO7637-2 surge specification | Validated for standardized automotive transient immunity testing (load dump, jump start, alternator ripple) |
| AEC-Q101 qualification | Confirms reliability for automotive electronic systems per stress-test requirements (HTOL, TC, UHAST, etc.) |
Applications
| Automotive Load Dump Protection | 12 V Power Rail Surge Suppression |
|---|---|
Use Scenario: Protecting engine control units (ECUs) and body control modules (BCMs) during alternator load dump events (ISO7637-2 Pulse 5a). IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery rail and protected IC input, clamping transients within 1 ns response time. Use Value: Limits voltage to ≤48.4 V during 6600 W surges, preventing latch-up or gate oxide damage in downstream PMICs and microcontrollers. | Use Scenario: Safeguarding infotainment head units and ADAS camera modules against inductive switching spikes from solenoids and relays. IC Role / Device Role / Timing Role: Standoff-rated TVS on main 12 V input, absorbing repetitive 10/1000 μs transients up to 136 A without degradation. Use Value: Maintains system uptime by preventing reset or brownout caused by >30 V excursions while drawing <10 μA leakage at nominal voltage. |
| Under-Hood Sensor Interface Protection | Start-Stop System Power Conditioning |
Use Scenario: Shielding oxygen sensor signal conditioning circuits and knock sensor amplifiers from EMI-coupled transients in high-noise engine compartments. IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ ≈ 1000 pF at VWM) placed at connector interface, preserving signal integrity for analog sensor inputs. Use Value: Clamps fast-rising edges (tr = 10 μs) without distorting millivolt-level sensor signals due to controlled VBR tolerance (±5 %) and tight thermal stability. | Use Scenario: Securing battery management ICs and DC-DC controllers in vehicles with frequent engine restarts and regenerative braking-induced voltage spikes. IC Role / Device Role / Timing Role: High-surge-capable TVS on 12 V auxiliary rail, sustaining repeated 700 A IFSM half-sine surges during cranking events. Use Value: Ensures uninterrupted operation across 100,000+ start-stop cycles by maintaining clamping performance at TJ = 175 °C and passing AEC-Q101 HTOL stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S30AHM3_A/K | Same VWM/VBR/VC ratings and DO-218AB package; updated revision with enhanced process control and tighter parametric distribution | Identical functional role; intended as direct replacement for new designs where SM8S30AHE3_A/K is marked "Not For New Designs" | Select SM8S30AHM3_A/K for new production to ensure long-term availability and latest AEC-Q101 test coverage |
| SMAJ30A | Lower PPPM (400 W vs. 6600 W), SMA package (DO-214AC), 150 °C max TJ, no AEC-Q101 qualification | Suitable only for non-automotive, low-energy industrial or consumer applications with modest surge exposure | Use SMAJ30A only in cost-sensitive, non-automotive contexts where 6600 W surge immunity and 175 °C operation are not required |
Compared with SM8S30AHE3_A/K, SM8S30AHM3_A/K offers identical electrical and thermal performance with improved manufacturing consistency and lifecycle support, while SMAJ30A provides basic TVS functionality at lower cost and power handling but lacks automotive qualification and high-temperature capability.
Availability
SM8S30AHE3_A/K is available at Aetrix Electronics and suitable for automotive electronics, engine control units, and battery management systems requiring stable component supply and proven AEC-Q101 reliability.
Supply support for SM8S30AHE3_A/K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on automotive, industrial, and power applications.
The SM8S series is part of Vishay's PAR® (Protected Anisotropic Rectifier) platform, engineered specifically for high-energy automotive transient suppression with extended temperature range and AEC-Q101 validation.
FAQ
Is SM8S30AHE3_A/K still recommended for new designs?
No - Vishay explicitly marks SM8S30AHE3_A/K as "Not For New Designs." The designated alternative is SM8S30AHM3_A/K, which maintains identical electrical specifications and packaging while incorporating process enhancements and extended product lifecycle support. SM8S30AHE3_A/K remains available for legacy production continuity but should not be selected for newly initiated projects.
What is the polarity configuration and heatsink connection of SM8S30AHE3_A/K?
The SM8S30AHE3_A/K is unidirectional with the metal heatsink serving as the anode terminal. This requires the heatsink pad on the PCB to be connected to the positive side of the protected circuit (e.g., battery rail), while the cathode lead connects to the downstream load. Incorrect orientation will prevent proper clamping and may cause device failure during surge events.
Does SM8S30AHE3_A/K meet ISO7637-2 requirements?
Yes - the SM8S30AHE3_A/K is specified to meet ISO7637-2 surge test requirements under defined conditions, including Pulse 5a (load dump) with 10 ms exponential waveform. Its 6600 W peak pulse power rating and 48.4 V clamping voltage at 136 A enable compliance when implemented with appropriate PCB layout and thermal management per Vishay's application guidelines.
What is the maximum junction temperature and thermal resistance of SM8S30AHE3_A/K?
The SM8S30AHE3_A/K has a maximum junction temperature (TJ max) of +175 °C and a measured thermal resistance junction-to-mount (RθJM) of 0.35 °C/W. This low RθJM value confirms highly effective heat conduction from the die through the metal heatsink into the PCB copper, enabling reliable operation in under-hood environments without active cooling.
How does the leakage current of SM8S30AHE3_A/K compare at high temperature?
At TA = 25 °C, SM8S30AHE3_A/K exhibits ≤10 μA reverse leakage at its 30 V stand-off voltage (VWM). At elevated junction temperature (TJ = 175 °C), leakage increases to ≤250 μA - still within acceptable limits for automotive always-on circuits. This controlled increase reflects stable passivation and ensures minimal impact on battery drain in sleep-mode vehicle networks.
SM8S30AHE3_A/K Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 136A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S30AHE3_A/K FAQ
1.How can I place an order for SM8S30AHE3_A/K through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S30AHE3_A/K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S30AHE3_A/K reliable?
The price and inventory of SM8S30AHE3_A/K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S30AHE3_A/K is usually 5 days.
3.What payment methods are accepted for SM8S30AHE3_A/K?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S30AHE3_A/K transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S30AHE3_A/K?
SM8S30AHE3_A/K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S30AHE3_A/K order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S30AHE3_A/K?
For technical support, including SM8S30AHE3_A/K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S30AHE3_A/K requirements.
6.How does Aetrix verify that SM8S30AHE3_A/K is sourced from the original manufacturer or authorized distributors?
All SM8S30AHE3_A/K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S30AHE3_A/K meets industry standards.
7.What is the process for return or replacement of SM8S30AHE3_A/K?
All SM8S30AHE3_A/K units undergo pre-shipment inspection (PSI). If there is an issue with SM8S30AHE3_A/K, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S30AHE3_A/K part is unused and in its original packaging.
Return procedure for SM8S30AHE3_A/K:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S30AHE3_A/K Tags
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