Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SM8S33A-001HE3/2D

Part No.:
SM8S33A-001HE3/2D
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixSM8S33A-001HE3/2D.pdf
Description:
TVS DIODE 33VWM 53.3VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,649

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SM8S33A-001HE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 33.0 V stand-off voltage (VWM), 36.7–40.6 V breakdown voltage (VBR), 53.3 V clamping voltage at 124 A peak pulse current, 6600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for under-hood applications.

For engineers reviewing the SM8S33A-001HE3/2D datasheet, SM8S33A-001HE3/2D pinout, SM8S33A-001HE3/2D application, or SM8S33A-001HE3/2D equivalent, key selection criteria include unidirectional polarity, DO-218AB package thermal performance (RθJC = 0.90 °C/W), 175 °C junction rating, ISO7637-2 compliance, and low leakage (<10 μA at VWM).

Technical Context

This TVS diode operates as a clamping device in parallel with sensitive electronics to shunt high-energy transients-especially 12 V automotive load dump surges-away from downstream circuitry. Its passivated anisotropic rectifier technology enables stable operation up to TJ = 175 °C and low forward voltage drop (VF ≤ 1.8 V at 100 A).

The device is optimized for high-reliability automotive environments: it meets MSL Level 1 (245 °C reflow), passes JESD201 Class 2 whisker testing, and delivers 5200 W surge capability under the longer 10/10,000 μs waveform-critical for sustained load dump events.

Key Specifications

ParameterValue and Actual Design Meaning
VWM33.0 V - Maximum reverse working voltage before clamping begins; defines safe operating margin below breakdown.
VBR (min/max)36.7 V / 40.6 V - Breakdown occurs within this range at 5 mA test current; ensures predictable turn-on threshold.
VC @ IPPM53.3 V at 124 A - Clamped voltage during 10/1000 μs surge; determines maximum stress on protected ICs.
PPPM (10/1000 μs)6600 W - Peak transient energy handling capacity; supports severe automotive load dump events.
TJ max175 °C - Maximum junction temperature; enables under-hood placement without derating penalties.
PolarityUnidirectional - Anode connected to heatsink; requires correct orientation in series with protected line.
RθJC0.90 °C/W - Low thermal resistance from junction to case; enables efficient heat transfer to PCB copper or external heatsink.

Pinout & Package

Package: DO-218AB - Surface-mount, thermally enhanced case with metal heatsink tab (Lead 2). Molding compound meets UL 94 V-0; matte tin-plated leads comply with J-STD-002 and JESD22-B102 solderability standards. HE3 suffix indicates RoHS-compliant, AEC-Q101 qualified construction.

Pin/TerminalCircuit RoleDesign Meaning
Lead 1CathodeConnected to protected line (e.g., battery rail); carries transient current into device during clamping.
Lead 2 / Metal HeatsinkAnodeMust be connected to system ground or low-impedance return path; serves as primary thermal conduction path and electrical reference.

Key Features

FeatureDesign Value
Junction passivationOptimized anisotropic rectifier design ensures stable VBR and low leakage over lifetime and temperature.
AEC-Q101 qualificationValidated for automotive-grade reliability including HTOL, TC, UHAST, and mechanical shock per AEC standard.
ISO7637-2 complianceMeets Pulse 5a/b load dump requirements when properly mounted on adequate copper area.
MSL Level 1 ratingSupports lead-free reflow up to 245 °C peak without popcorn or delamination risk.
Low clamping ratioVC/VWM = 53.3/33.0 ≈ 1.62 - Tight clamping margin preserves headroom for downstream 3.3 V/5 V ICs.

Applications

Automotive Load Dump Protection12 V Power Rail Surge Suppression

Use Scenario: Protecting engine control units (ECUs), body control modules (BCMs), and infotainment systems from 12 V battery line transients during alternator load dump events.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed in parallel with input filter capacitor, clamping surge voltage before it reaches DC-DC converters or microcontrollers.

Use Value: Limits peak voltage to 53.3 V during 6600 W surges, preventing latch-up or permanent damage to 36 V-rated input stages.

Use Scenario: Safeguarding industrial 12 V power distribution boards exposed to relay switching, motor commutation, and ESD coupling.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on main supply rail, coordinated with upstream fuses and downstream LC filters.

Use Value: Withstands 700 A non-repetitive forward surge (IFSM), enabling robust protection against repetitive inductive kickback.

Under-Hood Electronics ProtectionHigh-Temperature Power Interface

Use Scenario: Shielding sensors, actuators, and CAN transceivers mounted near engines or exhaust systems where ambient temperatures exceed 125 °C.

IC Role / Device Role / Timing Role: High-temperature-stable TVS providing continuous protection without parameter drift up to 175 °C junction temperature.

Use Value: Maintains <10 μA reverse leakage at VWM even at TJ = 175 °C, avoiding excessive standby current in always-on circuits.

Use Scenario: Securing power inputs of telematics control units (TCUs) and ADAS domain controllers requiring long-term reliability in hot-cabinet environments.

IC Role / Device Role / Timing Role: Thermally anchored TVS leveraging DO-218AB metal heatsink for direct PCB copper conduction and minimal RθJC.

Use Value: 0.90 °C/W junction-to-case thermal resistance enables >8 W steady-state dissipation with modest copper area, reducing need for external heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ33A-E3/5ATLower PPPM (400 W vs. 6600 W); SMA package (RθJC ≈ 50 °C/W); VBR 36.7–40.6 V same range.Not suitable for load dump; limited to ESD and low-energy transients in consumer/portable gear.Select only for space-constrained, low-surge applications where thermal mass and peak power are not critical.
TPSMD33ASame DO-218AB package; 6600 W PPPM; VBR 36.7–40.6 V; but not AEC-Q101 qualified and higher ID (50 μA vs. 10 μA at VWM).Lacks automotive qualification; may require additional validation for under-hood deployment.Consider for cost-sensitive industrial designs where AEC-Q101 is not mandated and higher leakage is acceptable.

Compared with SMAJ33A-E3/5AT and TPSMD33A, the SM8S33A-001HE3/2D uniquely combines automotive qualification, ultra-low thermal resistance, and 6600 W surge capacity in a single DO-218AB package-making it the only option among the three validated for ISO7637-2 load dump in production vehicles.

Availability

SM8S33A-001HE3/2D is available at Aetrix Electronics and suitable for automotive ECU protection, 12 V power rail surge suppression, and under-hood sensor interface applications requiring stable component supply across extended temperature and lifecycle demands.

Supply support for SM8S33A-001HE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, thermal performance, and automotive-grade validation.

The SM8SxxA family is engineered specifically for high-energy transient suppression in 12 V automotive systems, targeting load dump, jump-start, and inductive switching events with guaranteed AEC-Q101 compliance and 175 °C operation.

FAQ

What is the clamping voltage of the SM8S33A-001HE3/2D at its rated peak pulse current?

The SM8S33A-001HE3/2D has a maximum clamping voltage (VC) of 53.3 V when subjected to its peak pulse current (IPPM) of 124 A under the standard 10/1000 μs waveform. This value is measured at TC = 25 °C and defines the upper voltage limit imposed on protected circuitry during surge events. The SM8S33A-001HE3/2D maintains this clamping performance across its full operating temperature range due to its passivated junction design.

Is the SM8S33A-001HE3/2D suitable for bidirectional transient protection?

No, the SM8S33A-001HE3/2D is unidirectional only, with the metal heatsink serving as the anode and Lead 1 as the cathode. It must be oriented correctly in-circuit to protect against positive-going transients on a grounded-line configuration. For bidirectional protection, a separate device such as the SMBJ33CA or a back-to-back SM8S33A-001HE3/2D pair would be required-not the SM8S33A-001HE3/2D alone.

Does the SM8S33A-001HE3/2D meet automotive qualification standards?

Yes, the SM8S33A-001HE3/2D is AEC-Q101 qualified and explicitly listed as such in Vishay's documentation. It undergoes stress testing for high-temperature operating life, temperature cycling, humidity, and mechanical shock per AEC-Q101 Rev D. The "HE3" suffix confirms RoHS compliance and AEC-Q101 qualification, making the SM8S33A-001HE3/2D appropriate for production automotive electronics.

What is the thermal resistance from junction to case for the SM8S33A-001HE3/2D?

The SM8S33A-001HE3/2D has a typical thermal resistance from junction to case (RθJC) of 0.90 °C/W, measured under standard conditions. This low value is enabled by the DO-218AB package's metal heatsink terminal (Lead 2), which provides direct thermal conduction to PCB copper. Proper layout-using ≥100 mm² of 2 oz copper connected to the heatsink pad-is required to realize the full thermal benefit of the SM8S33A-001HE3/2D.

Can the SM8S33A-001HE3/2D be used in non-automotive applications?

Yes, the SM8S33A-001HE3/2D is widely deployed in industrial 12 V systems, telecom power interfaces, and transportation equipment where high-surge, high-temperature, and high-reliability protection is needed. Its 175 °C rating, 6600 W surge capacity, and low leakage make it suitable beyond automotive-though its AEC-Q101 qualification and ISO7637-2 validation were specifically established for automotive use cases like load dump.

SM8S33A-001HE3/2D Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-218AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
33V
Voltage - Breakdown (Min):
36.7V
Voltage - Clamping (Max) @ Ipp:
53.3V
Current - Peak Pulse (10/1000µs):
124A
Power - Peak Pulse:
6600W (6.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

SM8S33A-001HE3/2D FAQ

1.How can I place an order for SM8S33A-001HE3/2D through Aetrix?

Please submit a Request for Quotation (RFQ) for SM8S33A-001HE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SM8S33A-001HE3/2D reliable?

The price and inventory of SM8S33A-001HE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S33A-001HE3/2D is usually 5 days.

3.What payment methods are accepted for SM8S33A-001HE3/2D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S33A-001HE3/2D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SM8S33A-001HE3/2D?

SM8S33A-001HE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SM8S33A-001HE3/2D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SM8S33A-001HE3/2D?

For technical support, including SM8S33A-001HE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S33A-001HE3/2D requirements.

6.How does Aetrix verify that SM8S33A-001HE3/2D is sourced from the original manufacturer or authorized distributors?

All SM8S33A-001HE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S33A-001HE3/2D meets industry standards.

7.What is the process for return or replacement of SM8S33A-001HE3/2D?

All SM8S33A-001HE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM8S33A-001HE3/2D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SM8S33A-001HE3/2D part is unused and in its original packaging.

Return procedure for SM8S33A-001HE3/2D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SM8S33A-001HE3/2D Tags

  • SM8S33A-001HE3/2D
  • SM8S33A-001HE3/2D PDF
  • SM8S33A-001HE3/2D Datasheet
  • SM8S33A-001HE3/2D Specifications
  • SM8S33A-001HE3/2D Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SM8S33A-001HE3/2D
  • Buy SM8S33A-001HE3/2D
  • SM8S33A-001HE3/2D Price
  • SM8S33A-001HE3/2D Distributor
  • SM8S33A-001HE3/2D Supplier
  • SM8S33A-001HE3/2D Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER