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Vishay General Semiconductor - Diodes Division SM8S33A-001HE3_A/I
- Part No.:
- SM8S33A-001HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S33A-001HE3_A/I.pdf
- Description:
- TVS DIODE 33VWM DO218AB
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
SM8S33A-001HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 33 V stand-off voltage (VWM), 38.7 V nominal breakdown (VBR), and 6600 W peak pulse power (10/1000 μs). It delivers automotive-grade protection against load dump transients and inductive switching surges in 12 V/24 V vehicle power systems.
For engineers reviewing the SM8S33A-001HE3_A/I datasheet, SM8S33A-001HE3_A/I pinout, SM8S33A-001HE3_A/I application, or SM8S33A-001HE3_A/I equivalent, key selection criteria include its AEC-Q101 qualification, TJ = 175 °C operation, 53.3 V clamping voltage at 124 A IPPM, and DO-218AB thermal performance with RθJM = 0.35 °C/W.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve low leakage (<10 μA at VWM) and low forward voltage drop (≤1.8 V at 100 A), enabling robust clamping without parasitic conduction during normal operation. Its junction passivation and metallization support stable performance under high-temperature bias stress up to 175 °C.
The device is optimized for ISO 7637-2 compliance in automotive load dump scenarios, with validated 10 ms exponential waveform handling and thermal impedance characteristics that enable effective heat transfer to the heatsink (anode-side mounting). Polarity is fixed: anode is the metal heatsink terminal, cathode is lead 1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - Maximum continuous reverse operating voltage before clamping begins; defines system working voltage margin for 12 V/24 V automotive rails. |
| VBR (nom) | 38.7 V - Breakdown voltage at 5 mA test current; ensures reliable turn-on before downstream IC damage thresholds are exceeded. |
| VC @ IPPM | 53.3 V - Clamping voltage at 124 A peak pulse current (10/1000 μs); limits transient overvoltage seen by protected circuitry. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling capability; supports high-energy load dump events per ISO 7637-2 Pulse 5a. |
| TJ max | 175 °C - Maximum junction temperature rating; enables use in under-hood environments without derating penalties. |
| RθJM | 0.35 °C/W - Junction-to-mount thermal resistance; confirms efficient heat transfer to PCB copper or external heatsink via anode metal tab. |
| ID @ VWM | <10 μA - Reverse leakage at stand-off voltage; minimizes quiescent power loss and avoids false triggering in low-power control circuits. |
Pinout & Package
Package: DO-218AB - Surface-mount, anode-integrated metal heatsink package with matte tin-plated leads, UL 94 V-0 molding compound, and JESD 201 Class 2 whisker resistance. Mounting requires anode (heatsink) soldered to large copper area for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (cathode) | Transient current sink | Connected to protected line (e.g., battery rail); carries full surge current during clamping event. |
| Lead 2 / Metal Heatsink (anode) | Thermal and electrical reference | Must be soldered to ≥100 mm² copper pour; serves as primary thermal path and DC return path for clamped current. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTGB, HTRB, and TCT, ensuring reliability in safety-critical modules. |
| Junction passivation | Reduces surface leakage and improves long-term stability under humidity and bias, critical for 15+ year automotive service life. |
| MSL Level 1 | Rated for reflow up to 245 °C peak without moisture-induced failure; eliminates pre-bake requirement in standard SMT lines. |
| ISO 7637-2 compliant | Validated for Pulse 5a (load dump) testing with 10 ms exponential waveform, meeting OEM-level surge immunity standards. |
| Low VF (≤1.8 V @ 100 A) | Minimizes forward conduction loss during bidirectional surge events or reverse-polarity fault conditions. |
Applications
| Engine Control Unit (ECU) Power Input | Body Control Module (BCM) Battery Rail |
|---|---|
|
Use Scenario: Protects microcontroller power supply and CAN transceivers from alternator load dump spikes during engine start-stop cycles. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input filter capacitor; clamps within nanoseconds to limit voltage to <55 V. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V logic supplies and 12 V analog sensors during 120 V/350 ms transients. |
Use Scenario: Shields door module actuators, lighting drivers, and LIN transceivers from inductive kickback when relays or motors switch off. IC Role / Device Role / Timing Role: Primary overvoltage clamp on fused 12 V distribution line upstream of local regulators. Use Value: Enables use of cost-optimized LDOs and MOSFETs rated for ≤60 V, reducing BOM cost versus higher-voltage alternatives. |
| ADAS Camera Power Supply | Electric Power Steering (EPS) ECU |
|
Use Scenario: Safeguards image sensor and ISP power inputs against coupled transients from nearby high-current solenoids or ignition systems. IC Role / Device Role / Timing Role: Secondary protection stage after bulk LC filter; handles fast-rising edge transients missed by passive filtering. Use Value: Maintains uninterrupted video stream by preventing reset or corruption caused by sub-100 ns surges exceeding 40 V. |
Use Scenario: Secures motor driver gate supplies and MCU I/O against high-energy surges generated by brushless motor commutation and regenerative braking. IC Role / Device Role / Timing Role: High-power TVS mounted directly at EPS main connector; shunts >100 A pulses away from sensitive gate drivers. Use Value: Eliminates field failures linked to MOSFET avalanche breakdown, extending mean time between failures (MTBF) beyond 10,000 hours. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S33AHM3_A/I | Same VWM/VBR/PPPM specs but HM3 suffix indicates enhanced MSL level (1 per J-STD-020) and tighter VBR tolerance (±3 % vs ±5 %). | Preferred for new designs targeting extended reflow compatibility and tighter clamping consistency across temperature. | Select SM8S33AHM3_A/I if board assembly uses lead-free reflow profiles above 260 °C or requires reduced VBR variation in production lots. |
| SMAJ33A | Lower PPPM (400 W), smaller SMA package (RθJA ≈ 100 °C/W), no AEC-Q101 qualification, and lower TJ max (150 °C). | Limited to non-automotive, low-energy industrial or consumer applications where surge energy is below 100 mJ. | Use SMAJ33A only for cost-sensitive, non-automotive designs with verified low-surge environments and no under-hood placement. |
Compared with SM8S33A-001HE3_A/I, SM8S33AHM3_A/I offers improved process control for high-volume automotive manufacturing, while SMAJ33A trades off surge capacity and qualification for footprint and cost reduction-neither is pin-compatible due to DO-218AB vs. SMA package mismatch.
Availability
SM8S33A-001HE3_A/I is available at Aetrix Electronics and suitable for automotive ECU protection, body electronics power conditioning, and ADAS camera power integrity requiring stable component supply across multi-year production programs.
Supply support for SM8S33A-001HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and TVS devices for automotive, industrial, and computing markets.
The SM8SxxA family was engineered specifically for automotive load dump and ISO 7637-2 compliance, emphasizing thermal robustness, AEC-Q101 qualification, and high-energy clamping in surface-mount form factors.
FAQ
What is the maximum clamping voltage of the SM8S33A-001HE3_A/I at its rated peak pulse current?
The SM8S33A-001HE3_A/I has a maximum clamping voltage (VC) of 53.3 V at its specified peak pulse current (IPPM) of 124 A under the 10/1000 μs waveform condition. This value is measured per the manufacturer's test method and ensures downstream components see limited overvoltage during standardized surge events. The SM8S33A-001HE3_A/I maintains this clamping performance across its full operating temperature range.
Is the SM8S33A-001HE3_A/I suitable for new automotive designs?
No-the SM8S33A-001HE3_A/I is marked "Not For New Designs" in Vishay documentation, with SM8S33AHM3_A/I recommended as the direct alternative. While the SM8S33A-001HE3_A/I remains available and functional, new automotive projects should use the HM3 variant for updated MSL rating, tighter VBR tolerance, and continued long-term supply assurance. The SM8S33A-001HE3_A/I is appropriate only for legacy design support or existing production ramps.
How is thermal management implemented for the SM8S33A-001HE3_A/I in PCB layout?
Thermal management for the SM8S33A-001HE3_A/I relies on soldering its metal heatsink (anode) to a minimum 100 mm² copper area on the PCB, acting as both electrical return and thermal path. The RθJM of 0.35 °C/W confirms efficient heat transfer to the board; insufficient copper area will cause junction temperature rise beyond 175 °C under repeated surges. Lead 1 (cathode) requires standard SMT pad design per IPC-7351 DO-218AB footprint.
Does the SM8S33A-001HE3_A/I meet ISO 7637-2 Pulse 5a requirements?
Yes-the SM8S33A-001HE3_A/I is explicitly validated to meet ISO 7637-2 Pulse 5a (load dump) requirements using the 10 ms exponential waveform, as confirmed in Vishay's application curves and compliance statements. Its 6600 W PPPM rating and thermal design allow it to absorb the full energy of standardized load dump tests without degradation. The SM8S33A-001HE3_A/I achieves this while maintaining clamping below 55 V at rated current.
What does the "HE3_A/I" suffix indicate in SM8S33A-001HE3_A/I?
The "HE3_A/I" suffix encodes multiple specifications: "H" denotes AEC-Q101 qualification; "E3" indicates RoHS-compliant, halogen-free, Pb-free termination; "A" specifies ±5 % breakdown voltage tolerance and unidirectional polarity; "I" identifies the preferred packaging code (750-unit 13″ tape-and-reel, anode toward sprocket hole). The "001" reflects internal revision or lot control; the full SM8S33A-001HE3_A/I part number ensures traceability to this exact qualified build.
SM8S33A-001HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 124A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S33A-001HE3_A/I FAQ
1.How can I place an order for SM8S33A-001HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S33A-001HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S33A-001HE3_A/I reliable?
The price and inventory of SM8S33A-001HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S33A-001HE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S33A-001HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S33A-001HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S33A-001HE3_A/I?
SM8S33A-001HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S33A-001HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S33A-001HE3_A/I?
For technical support, including SM8S33A-001HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S33A-001HE3_A/I requirements.
6.How does Aetrix verify that SM8S33A-001HE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S33A-001HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S33A-001HE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S33A-001HE3_A/I?
All SM8S33A-001HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S33A-001HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S33A-001HE3_A/I part is unused and in its original packaging.
Return procedure for SM8S33A-001HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S33A-001HE3_A/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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