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Vishay General Semiconductor - Diodes Division SM8S33AHE3_A/I
- Part No.:
- SM8S33AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S33AHE3_A/I.pdf
- Description:
- TVS DIODE 33VWM 53.3VC DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:1,816
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Product details
Overview
SM8S33AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 33 V stand-off voltage (VWM), 38.7 V nominal breakdown voltage (VBR), 53.3 V clamping voltage at 124 A peak pulse current, and 6600 W peak pulse power (10/1000 μs). Rated for TJ = 175 °C and AEC-Q101 qualified, it operates in DO-218AB package with anode-heatsink polarity.
For engineers reviewing the SM8S33AHE3_A/I datasheet, SM8S33AHE3_A/I pinout, SM8S33AHE3_A/I application, or SM8S33AHE3_A/I equivalent, this device is selected for high-reliability 12 V automotive power rail surge suppression where low leakage (<10 μA at VWM), high surge robustness, and thermal stability up to 175 °C are critical design requirements.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for junction stability under repetitive surge stress. Its DO-218AB package provides low thermal resistance (RθJM = 0.35 °C/W) and meets MSL level 1 with 245 °C reflow peak, enabling direct integration into automotive PCBs without derating concerns at elevated ambient temperatures.
The device delivers 6600 W peak pulse power handling with 10/1000 μs waveform and maintains clamping performance across -55 °C to +175 °C operating range. Its unidirectional polarity and heatsink-anode configuration support efficient thermal coupling to chassis ground in load-dump protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin for 12 V automotive systems. |
| VBR (nom) | 38.7 V - Breakdown voltage at 5 mA test current; ensures reliable turn-on during transients exceeding system overvoltage thresholds. |
| VC @ IPPM | 53.3 V - Clamping voltage at 124 A peak pulse current; limits downstream IC voltage stress during ISO 7637-2 load dump events. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power dissipation capability; enables single-device protection against severe automotive surges without cascading failure. |
| TJ max | +175 °C - Maximum junction temperature rating; supports operation in engine bay and powertrain control modules without thermal shutdown. |
| ID @ VWM | <10 μA - Reverse leakage current at rated stand-off voltage; minimizes quiescent power loss in always-on vehicle subsystems. |
| IFSM | 700 A - Non-repetitive forward surge current rating; withstands high-current inrush during battery connection or jump-start scenarios. |
Pinout & Package
Package: DO-218AB - Surface-mount, anode-heatsink configuration with matte tin-plated terminals compliant with J-STD-002 and JESD 22-B102 solderability standards. Meets UL 94 V-0 flammability rating and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current entry point during clamping; thermally coupled to PCB copper pour | Primary thermal path to board; must be connected to large copper area for RθJM = 0.35 °C/W performance. |
| Cathode | Current exit point during clamping; connected to protected line | Connected to 12 V rail upstream of sensitive electronics; defines clamping reference node. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance per JEDEC standards. |
| Junction passivation | Optimized anisotropic rectifier structure prevents parametric drift under high-temperature, high-humidity operational stress. |
| MSL Level 1 rating | Enables standard SMT assembly without baking or special handling; compatible with 245 °C peak reflow profile. |
| ISO 7637-2 compliance | Meets Pulse 5a/b load dump test requirements for 12 V systems, verified at TA = 25 °C and TJ = 175 °C. |
| Low VF at high IF | VF ≤ 1.8 V at 100 A (300 μs pulse); reduces forward conduction losses during sustained overvoltage conditions. |
Applications
| Automotive Load Dump Protection | Engine Control Unit (ECU) Power Input |
|---|---|
Use Scenario: Suppresses 12 V battery line transients caused by alternator field-circuit interruption during engine run. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery input and ECU DC-DC converter input stage. Use Value: Clamps 53.3 V at 124 A to protect downstream regulators and microcontrollers from ISO 7637-2 Pulse 5a (35 V, 400 ms) events. |
Use Scenario: Shields ECU main power rail from voltage spikes induced by solenoid switching and ignition coil discharge. IC Role / Device Role / Timing Role: Primary surge suppression device on 12 V input before pre-regulator filtering. Use Value: Withstands 700 A IFSM and operates reliably at TJ = 175 °C near engine compartment heat sources. |
| Body Control Module (BCM) Power Supply | ADAS Camera Power Interface |
Use Scenario: Protects BCM low-quiescent current LDOs and CAN transceivers from repeated load dump exposure. IC Role / Device Role / Timing Role: Standoff-rated TVS maintaining <10 μA leakage to preserve sleep-mode current budget. Use Value: Enables long-term reliability in always-on modules with minimal standby power penalty. |
Use Scenario: Safeguards 12 V input to image sensor power management ICs in front-facing ADAS cameras. IC Role / Device Role / Timing Role: High-power TVS mounted directly on camera module PCB with heatsink pad tied to chassis ground. Use Value: Delivers 6600 W pulse handling in compact DO-218AB footprint, minimizing board space while meeting ASIL-B EMC requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S33AHM3_A/I | Same electrical specs and DO-218AB package; HM3 suffix indicates enhanced moisture sensitivity level (MSL 1) and updated wafer process. | No functional difference; intended as drop-in replacement for new designs per Vishay's "Not For New Designs" notice. | Select SM8S33AHM3_A/I for new automotive programs requiring latest revision and full lifecycle support. |
| SMAJ33A | Lower PPPM (400 W vs. 6600 W), SMA package (higher RθJA), 33 V VWM but 36.7 V VBR min; not AEC-Q101 qualified. | Limited to non-automotive or low-energy transient environments; unsuitable for load dump or engine bay use. | Only consider SMAJ33A for cost-sensitive industrial applications with sub-100 A surge requirements and no AEC-Q101 mandate. |
Compared with SM8S33AHE3_A/I, SM8S33AHM3_A/I offers identical protection performance with improved manufacturing consistency and extended availability, while SMAJ33A lacks the thermal robustness, surge capacity, and automotive qualification required for modern vehicle platforms.
Availability
SM8S33AHE3_A/I is available at Aetrix Electronics and suitable for automotive load dump protection, engine control unit (ECU) power input hardening, and body control module (BCM) surge suppression requiring stable component supply across extended production lifecycles.
Supply support for SM8S33AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8S series belongs to Vishay's PAR® family of high-power TVS diodes engineered specifically for automotive-grade load dump and ISO 7637-2 transient suppression in harsh thermal environments.
FAQ
What is the maximum clamping voltage of the SM8S33AHE3_A/I at its rated peak pulse current?
The SM8S33AHE3_A/I has a maximum clamping voltage (VC) of 53.3 V when subjected to its rated peak pulse current of 124 A using a 10/1000 μs waveform. This value is measured per standard test conditions in the Vishay datasheet (Document Number 88387, page 2) and defines the upper voltage limit imposed on protected circuitry during worst-case surge events. The SM8S33AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is the SM8S33AHE3_A/I suitable for new automotive designs?
No - Vishay explicitly labels SM8S33AHE3_A/I as "Not For New Designs" in its official documentation, recommending SM8S33AHM3_A/I as the alternative device. While SM8S33AHE3_A/I remains available for legacy program support and existing production, new automotive designs should adopt the HM3-suffix variant to ensure long-term supply continuity, updated process control, and full alignment with current AEC-Q101 test revisions.
What does the "HE3_A/I" suffix indicate in SM8S33AHE3_A/I?
The "HE3_A/I" suffix in SM8S33AHE3_A/I decodes as follows: "H" denotes AEC-Q101 qualification; "E3" specifies RoHS-compliant, halogen-free, lead-free termination; "A" indicates ±5% breakdown voltage tolerance and unidirectional polarity; "I" refers to the preferred packaging code (750-unit 13″ tape-and-reel with anode toward sprocket hole). This full suffix confirms automotive-grade material compliance and assembly-ready packaging for SM8S33AHE3_A/I.
How does the DO-218AB package of the SM8S33AHE3_A/I improve thermal performance compared to SMA or SMB packages?
The DO-218AB package of the SM8S33AHE3_A/I achieves a junction-to-mount thermal resistance (RθJM) of 0.35 °C/W - significantly lower than SMA (≈15 °C/W) or SMB (≈10 °C/W) - due to its integrated metal heatsink terminal acting as the anode. This allows SM8S33AHE3_A/I to dissipate 6600 W pulses without excessive junction temperature rise, enabling reliable operation at TJ = 175 °C in engine bay applications where SMA/SMB variants would thermally saturate.
Does the SM8S33AHE3_A/I meet ISO 7637-2 requirements for automotive load dump protection?
Yes - the SM8S33AHE3_A/I is specified to meet ISO 7637-2 surge requirements, particularly Pulse 5a (load dump), as confirmed in Vishay's datasheet (page 1, FEATURES section). Its 6600 W peak pulse power rating, 53.3 V clamping voltage, and 124 A IPPM are validated under test conditions aligned with ISO 7637-2 Annex D. Performance is guaranteed across the full -55 °C to +175 °C operating range, making SM8S33AHE3_A/I suitable for certified automotive power rail protection.
SM8S33AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 124A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S33AHE3_A/I FAQ
1.How can I place an order for SM8S33AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S33AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S33AHE3_A/I reliable?
The price and inventory of SM8S33AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S33AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S33AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S33AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S33AHE3_A/I?
SM8S33AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S33AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S33AHE3_A/I?
For technical support, including SM8S33AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S33AHE3_A/I requirements.
6.How does Aetrix verify that SM8S33AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S33AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S33AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S33AHE3_A/I?
All SM8S33AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S33AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S33AHE3_A/I part is unused and in its original packaging.
Return procedure for SM8S33AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S33AHE3_A/I Tags
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