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Vishay General Semiconductor - Diodes Division SM8S33AHE3_A/K
- Part No.:
- SM8S33AHE3_A/K
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S33AHE3_A/K.pdf
- Description:
- TVS DIODE 33VWM DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,277
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Product details
Overview
SM8S33AHE3_A/K from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection in 12 V systems. It features a 33 V stand-off voltage (VWM), 38.7 V nominal breakdown voltage (VBR), 53.3 V clamping voltage at 124 A peak pulse current, and 6600 W peak pulse power (10/1000 μs). Its DO-218AB package supports TJ = 175 °C operation and AEC-Q101 qualification.
For engineers reviewing the SM8S33AHE3_A/K datasheet, SM8S33AHE3_A/K pinout, SM8S33AHE3_A/K application, or SM8S33AHE3_A/K equivalent, this page delivers verified electrical parameters, thermal performance data, automotive-grade reliability context, and direct alternative part guidance for high-surge industrial and vehicle electronics design.
Technical Context
The SM8S33AHE3_A/K employs passivated anisotropic rectifier technology to achieve low leakage (<10 μA at VWM) and low forward voltage drop (<1.8 V at 100 A), enabling efficient clamping during fast transients. Its junction-to-mount thermal resistance is 0.35 °C/W, supporting high-power dissipation on metal heatsinks.
It meets ISO 7637-2 surge requirements for automotive load dump events and complies with MSL Level 1 (245 °C reflow). The device is rated for non-repetitive 10/1000 μs surges up to 6600 W and 10/10,000 μs surges up to 5200 W, with 700 A IFSM capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - Maximum continuous reverse operating voltage before clamping begins; defines system bus compatibility with 12 V automotive networks. |
| VBR (nom) | 38.7 V - Breakdown voltage at 5 mA test current; ensures reliable turn-on margin above VWM for robust transient response. |
| VC @ IPPM | 53.3 V - Clamping voltage at 124 A peak pulse current; limits downstream voltage stress during ISO 7637-2 load dump events. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling; enables suppression of high-energy transients without failure in engine control units. |
| TJ max | +175 °C - Maximum junction temperature; supports under-hood placement in modern vehicles with extended thermal envelopes. |
| IFSM | 700 A - Surge current rating for 8.3 ms half-sine wave; withstands repetitive cranking and alternator switching surges. |
| Polarity | Unidirectional - Anode-connected heatsink configuration; requires correct PCB orientation for proper circuit protection. |
Pinout & Package
Package: DO-218AB - Surface-mount, thermally enhanced case with metal heatsink terminal (anode), matte tin-plated leads, UL 94 V-0 molding compound, and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current entry point during clamping | Must be connected to system ground plane or metal chassis for optimal thermal dissipation and low-inductance path. |
| Cathode | Current exit point during clamping | Connected to protected line (e.g., battery rail); polarity must match unidirectional TVS orientation in schematic. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Reduces leakage to ≤10 μA at VWM and improves long-term stability under high-temperature bias conditions. |
| AEC-Q101 qualification | Validates reliability for automotive applications including vibration, thermal cycling, and humidity exposure per JEDEC standards. |
| DO-218AB thermal performance | RθJM = 0.35 °C/W enables >8 W steady-state dissipation when mounted on copper heatsink, critical for sustained load dump events. |
| ISO 7637-2 compliance | Guarantees functional immunity to standardized automotive transient waveforms, including Pulse 5a (load dump) up to 35 V. |
| MSL Level 1 rating | Permits single-pass reflow at 245 °C peak without moisture-induced damage, simplifying high-volume SMT manufacturing. |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Rail Protection |
|---|---|
|
Use Scenario: Protects ECU microcontroller power rails from alternator load dump transients during ignition-off events in 12 V vehicles. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery rail and input filter capacitor to clamp overvoltage before LDO regulators. Use Value: Limits clamped voltage to 53.3 V, staying below 60 V absolute maximum ratings of common automotive PMICs and MCUs. |
Use Scenario: Shields BCM power inputs from inductive switching spikes generated by door lock actuators, window motors, and lighting relays. IC Role / Device Role / Timing Role: Fast-response transient suppressor installed at main 12 V entry point, upstream of DC-DC converters and CAN transceivers. Use Value: Withstands 124 A peak pulse current and 6600 W surge energy, preventing latch-up or permanent damage during repeated actuator cycling. |
| Advanced Driver Assistance Systems (ADAS) Camera Power Supply | Electric Power Steering (EPS) Motor Driver Protection |
|
Use Scenario: Safeguards image sensor and ISP power domains in rear-view and surround-view cameras exposed to vehicle-level transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 12 V input stage, coordinated with ceramic bypass capacitors to reduce clamping delay. Use Value: Low 0.091 %/°C VBR temperature coefficient ensures stable triggering across -40 °C to +125 °C ambient ranges. |
Use Scenario: Absorbs back-EMF energy from EPS motor windings during rapid deceleration and regenerative braking events. IC Role / Device Role / Timing Role: High-surge TVS placed across H-bridge supply rails to prevent MOSFET avalanche failure and gate driver overvoltage. Use Value: 700 A IFSM rating handles repetitive 8.3 ms surges from motor commutation, extending power stage lifetime in steering column assemblies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S33AHM3_A/K | Same VWM/VBR/VC specs, but HM3 suffix indicates updated material formulation with improved high-temperature leakage stability at TJ = 175 °C. | Preferred for new designs targeting extended life in under-hood modules where leakage drift impacts long-term reliability. | Select SM8S33AHM3_A/K for new designs; SM8S33AHE3_A/K remains valid for legacy production continuity. |
| SMAJ33A | Lower PPPM (400 W vs. 6600 W), smaller SMA package (RθJA = 110 °C/W), no AEC-Q101 qualification, and 150 °C TJ max. | Suitable only for low-energy consumer or industrial applications-not automotive load dump or ISO 7637-2 compliance. | Use SMAJ33A only in cost-sensitive, non-automotive applications with <500 W surge requirements and no AEC-Q101 mandate. |
Compared with SM8S33AHE3_A/K, SM8S33AHM3_A/K offers identical electrical performance with enhanced high-temperature leakage control for next-generation automotive programs, while SMAJ33A provides a lower-cost, lower-power alternative unsuitable for load dump protection due to its 400 W rating and lack of automotive qualification.
Availability
SM8S33AHE3_A/K is available at Aetrix Electronics and suitable for automotive ECU protection, body control module hardening, and ADAS camera power conditioning requiring stable component supply across multi-year vehicle production cycles.
Supply support for SM8S33AHE3_A/K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.
The SM8S series is engineered specifically for automotive-grade transient suppression, emphasizing high-temperature operation, AEC-Q101 compliance, and ISO 7637-2 surge immunity in harsh vehicle environments.
FAQ
What is the clamping voltage of the SM8S33AHE3_A/K at its rated peak pulse current?
The SM8S33AHE3_A/K has a maximum clamping voltage (VC) of 53.3 V at 124 A peak pulse current (IPPM) under 10/1000 μs waveform conditions. This value is measured per standard test methods and ensures protected downstream ICs remain within safe operating voltage limits during automotive load dump events. The SM8S33AHE3_A/K maintains this clamping performance across its full operating temperature range.
Is the SM8S33AHE3_A/K qualified for automotive use?
Yes, the SM8S33AHE3_A/K is AEC-Q101 qualified and rated for TJ = -55 °C to +175 °C operation. It meets ISO 7637-2 surge requirements for automotive load dump and inductive switching transients, and is manufactured with RoHS-compliant, halogen-free materials. The HE3 suffix confirms compliance with JESD 201 Class 2 whisker testing, making SM8S33AHE3_A/K suitable for safety-critical vehicle subsystems.
What does the "HE3" suffix mean in SM8S33AHE3_A/K?
The "HE3" suffix in SM8S33AHE3_A/K denotes RoHS-compliant, halogen-free construction with matte tin-plated leads that meet J-STD-002 and JESD 22-B102 solderability standards. The "H" indicates AEC-Q101 qualification, and "E3" specifies lead (Pb)-free termination and environmental compliance per Vishay's material categorization system. This suffix applies directly to the SM8S33AHE3_A/K production variant.
Can the SM8S33AHE3_A/K replace the SM8S33AHM3_A/K in existing designs?
The SM8S33AHE3_A/K and SM8S33AHM3_A/K share identical electrical specifications (VWM, VBR, VC, PPPM) and mechanical packaging (DO-218AB), but differ in material formulation: HM3 offers improved high-temperature leakage stability. While SM8S33AHE3_A/K may function in HM3-designated layouts, Vishay explicitly marks SM8S33AHE3_A/K as "Not For New Designs." For legacy continuity, SM8S33AHE3_A/K remains viable; for new releases, SM8S33AHM3_A/K is recommended.
What is the thermal resistance from junction to mount for the SM8S33AHE3_A/K?
The SM8S33AHE3_A/K has a typical junction-to-mount thermal resistance (RθJM) of 0.35 °C/W, measured per JEDEC 51-14 using the Transient Dual Interface Method. This low value reflects the DO-218AB package's metal heatsink terminal and enables effective heat transfer to PCB copper planes or external heatsinks-critical for sustaining 8 W power dissipation and managing repeated surge events without thermal runaway. This RθJM value is confirmed for the SM8S33AHE3_A/K variant.
SM8S33AHE3_A/K Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 124A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S33AHE3_A/K FAQ
1.How can I place an order for SM8S33AHE3_A/K through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S33AHE3_A/K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S33AHE3_A/K reliable?
The price and inventory of SM8S33AHE3_A/K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S33AHE3_A/K is usually 5 days.
3.What payment methods are accepted for SM8S33AHE3_A/K?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S33AHE3_A/K transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S33AHE3_A/K?
SM8S33AHE3_A/K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S33AHE3_A/K order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S33AHE3_A/K?
For technical support, including SM8S33AHE3_A/K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S33AHE3_A/K requirements.
6.How does Aetrix verify that SM8S33AHE3_A/K is sourced from the original manufacturer or authorized distributors?
All SM8S33AHE3_A/K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S33AHE3_A/K meets industry standards.
7.What is the process for return or replacement of SM8S33AHE3_A/K?
All SM8S33AHE3_A/K units undergo pre-shipment inspection (PSI). If there is an issue with SM8S33AHE3_A/K, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S33AHE3_A/K part is unused and in its original packaging.
Return procedure for SM8S33AHE3_A/K:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S33AHE3_A/K Tags
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