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Vishay General Semiconductor - Diodes Division SM8S33AHM3/I
- Part No.:
- SM8S33AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM8S33AHM3/I.pdf
- Description:
- TVS DIODE 33VWM 53.3VC DO218AC
- Quantity:
- Payment:
- Shipping:
Inventory:3,493
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Product details
Overview
SM8S33AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 33 V stand-off voltage (VWM), 36.7–40.6 V breakdown voltage (VBR) at 5 mA, 53.3 V clamping voltage (VC) at 124 A peak pulse current, and 6600 W peak pulse power (10/1000 μs). Rated for TJ = 175 °C and AEC-Q101 qualified, it is used in 12 V automotive power rail protection.
For engineers reviewing the SM8S33AHM3/I datasheet, SM8S33AHM3/I pinout, SM8S33AHM3/I application, or SM8S33AHM3/I equivalent, this page delivers verified electrical parameters, DO-218AB package details, thermal resistance (RθJM = 0.35 °C/W), ISO7637-2 compliance context, and direct alternative part guidance - all specific to SM8S33AHM3/I.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low leakage (<10 μA at VWM). Its unidirectional polarity and heatsink-anode configuration enable robust mounting on metal substrates for enhanced thermal dissipation in automotive front-end circuits.
It meets MSL Level 1 per J-STD-020 (245 °C reflow peak), supports 700 A non-repetitive forward surge current (8.3 ms half-sine), and delivers 5200 W peak pulse power under 10/10,000 μs waveform - critical for sustained load dump transients in engine control units and body electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - Maximum continuous reverse operating voltage before clamping begins; sets system-level overvoltage trip threshold for 12 V automotive rails. |
| VBR (min/typ/max) | 36.7 / 38.7 / 40.6 V at 5 mA - Confirmed breakdown range ensures predictable turn-on behavior across temperature and production lot variation. |
| VC @ IPPM | 53.3 V at 124 A (10/1000 μs) - Clamping voltage defines maximum stress imposed on downstream ICs during surge events. |
| PPPM (10/1000 μs) | 6600 W - Peak energy-handling capability sufficient for ISO7637-2 Pulse 5a (load dump) with margin. |
| TJ max | +175 °C - Enables operation in under-hood environments without derating, supporting AEC-Q101 automotive qualification. |
| RθJM | 0.35 °C/W - Junction-to-mount thermal resistance confirms efficient heat transfer to PCB copper or metal heatsink. |
| Leakage @ VWM | ≤10 μA at 25 °C - Low reverse leakage preserves battery life and avoids false triggering in always-on vehicle modules. |
Pinout & Package
Package: DO-218AB - Surface-mount molded case with matte tin-plated leads, UL 94 V-0 rated compound, and anode-connected metal heatsink base for low-inductance, high-current surge conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Metal Heatsink Base) | Current return path and thermal interface | Directly mounted to PCB copper pour or chassis ground; serves as primary surge current sink and thermal conduction path. |
| Cathode (Lead 1) | Transient voltage sensing and clamping node | Connected to protected line (e.g., battery feed); initiates avalanche conduction when VAK exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated reliability for automotive under-hood applications including temperature cycling, humidity, and mechanical shock. |
| Junction passivation technology | Stable VBR drift <0.091 %/°C and low leakage maintained over lifetime and 175 °C junction operation. |
| DO-218AB package with metal heatsink | Enables 0.35 °C/W RθJM and supports >700 A IFSM - superior thermal performance vs. standard SMA/SMB packages. |
| ISO7637-2 Pulse 5a compliance | Verified 6600 W (10/1000 μs) and 5200 W (10/10,000 μs) handling meets OEM load dump test requirements. |
| MSL Level 1 rating | Compatible with standard 245 °C Pb-free reflow profiles without preconditioning or dry-pack requirements. |
Applications
| Automotive Engine Control Unit (ECU) | Body Control Module (BCM) |
|---|---|
|
Use Scenario: Protects microcontroller power supply and CAN transceiver inputs from alternator load dump surges during ignition-off transitions. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and local DC/DC input, clamping within 100 ns to limit voltage to ≤53.3 V. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V logic ICs by limiting transient overvoltage to safe levels defined by ISO7637-2. |
Use Scenario: Shields LIN bus transceivers and door module MCUs from inductive switching spikes generated by window lift motors and seat actuators. IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V supply line upstream of LDO regulators, conducting only during >33 V transients. Use Value: Maintains system uptime by suppressing >100 V spikes before they propagate to sensitive analog and digital circuitry. |
| Advanced Driver Assistance Systems (ADAS) Camera Power Input | Electric Power Steering (EPS) ECU Protection |
|
Use Scenario: Safeguards image sensor and ISP power domains against battery line transients induced by nearby solenoid activation or jump-start conditions. IC Role / Device Role / Timing Role: Primary overvoltage clamp on fused 12 V input, positioned before buck converter to prevent input overvoltage failure mode. Use Value: Ensures uninterrupted video stream by preventing shutdown or reset caused by transient-induced regulator dropout or brownout. |
Use Scenario: Guards motor driver ICs and position sensor interfaces from high-energy back-EMF during EPS motor deceleration or fault recovery. IC Role / Device Role / Timing Role: High-power TVS connected directly across H-bridge supply rails, absorbing bidirectional inductive kickback via unidirectional conduction path. Use Value: Extends field lifetime by eliminating cumulative gate oxide stress in MOSFET drivers exposed to repetitive 50–100 V spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33AHE3/A | Lower PPPM (400 W), DO-214AC package, RθJM ≈ 25 °C/W, VBR = 36.7–40.6 V same tolerance. | Not suitable for ISO7637-2 load dump; limited to lower-energy transients like ESD or relay bounce. | Select SMAJ33AHE3/A only for cost-sensitive non-automotive industrial controls where 6600 W surge capacity is unnecessary. |
| SM8S33AHM3/57 | Identical electrical specs and DO-218AB package; differs only in packaging - 57" tape vs. 13" tape (I suffix) and reel orientation. | No functional or application difference; both meet AEC-Q101 and ISO7637-2. | SM8S33AHM3/57 is functionally interchangeable with SM8S33AHM3/I for board-level design; choice depends solely on manufacturing line tape-feed compatibility. |
Compared with SMAJ33AHE3/A, SM8S33AHM3/I delivers 16.5× higher surge power handling and 70× lower thermal resistance - enabling reliable load dump protection where SMAJ33AHE3/A would fail catastrophically. Against SM8S33AHM3/57, it offers identical protection performance with optimized reel logistics for SMT placement systems using 13" diameter tape.
Availability
SM8S33AHM3/I is available at Aetrix Electronics and suitable for automotive ECU protection, ADAS camera power conditioning, and electric power steering systems requiring stable component supply across long production lifecycles.
Supply support for SM8S33AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8SxxA family was engineered specifically for AEC-Q101-compliant automotive load dump protection, emphasizing high-temperature operation (175 °C), low thermal resistance, and repeatable clamping performance under extreme surge conditions.
FAQ
What is the clamping voltage of SM8S33AHM3/I at its rated peak pulse current?
The SM8S33AHM3/I has a maximum clamping voltage (VC) of 53.3 V when subjected to its specified peak pulse current of 124 A under a 10/1000 μs waveform. This value is measured per JEDEC standards and guarantees that downstream circuitry will not experience voltages exceeding 53.3 V during such transients. The SM8S33AHM3/I maintains this clamping performance across its full operating temperature range.
Is SM8S33AHM3/I suitable for ISO7637-2 Pulse 5a compliance testing?
Yes, the SM8S33AHM3/I is explicitly rated for ISO7637-2 Pulse 5a (load dump) protection, with 6600 W peak pulse power (10/1000 μs) and 5200 W (10/10,000 μs) capability. Its DO-218AB package and 0.35 °C/W RθJM allow sustained energy absorption without thermal runaway. The SM8S33AHM3/I data sheet confirms compliance under varied test conditions per the standard.
What does the "H" in SM8S33AHM3/I signify?
The "H" in SM8S33AHM3/I denotes AEC-Q101 qualification, confirming that the SM8S33AHM3/I has passed rigorous automotive-grade reliability testing including temperature cycling, humidity bias, and mechanical shock. This distinguishes it from industry-grade variants and validates its use in safety-critical automotive applications where long-term reliability under thermal stress is mandatory.
Can SM8S33AHM3/I be used in bidirectional configurations?
No, the SM8S33AHM3/I is unidirectional only, with polarity marked by anode connection to the metal heatsink base. It conducts only when cathode voltage exceeds anode voltage by ≥VBR. For bidirectional protection, two SM8S33AHM3/I devices must be connected in series opposition - but this is not recommended due to mismatched VBR tolerances and increased footprint. Use a dedicated bidirectional TVS (e.g., SMBJ33CA) instead.
What is the maximum junction temperature rating for SM8S33AHM3/I?
The SM8S33AHM3/I is rated for a maximum junction temperature (TJ) of +175 °C, validated per AEC-Q101 stress tests. This enables reliable operation in under-hood environments without derating, even when mounted on minimal copper area. The SM8S33AHM3/I's thermal design - including RθJM = 0.35 °C/W - ensures junction temperatures remain within limit under worst-case surge and ambient conditions.
SM8S33AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 124A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM8S33AHM3/I FAQ
1.How can I place an order for SM8S33AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S33AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S33AHM3/I reliable?
The price and inventory of SM8S33AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S33AHM3/I is usually 5 days.
3.What payment methods are accepted for SM8S33AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S33AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S33AHM3/I?
SM8S33AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S33AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S33AHM3/I?
For technical support, including SM8S33AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S33AHM3/I requirements.
6.How does Aetrix verify that SM8S33AHM3/I is sourced from the original manufacturer or authorized distributors?
All SM8S33AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S33AHM3/I meets industry standards.
7.What is the process for return or replacement of SM8S33AHM3/I?
All SM8S33AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S33AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S33AHM3/I part is unused and in its original packaging.
Return procedure for SM8S33AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S33AHM3/I Tags
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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