Vishay General Semiconductor - Diodes Division SM8S36-2HE3_A/I
- Part No.:
- SM8S36-2HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S36-2HE3_A/I.pdf
- Description:
- TVS DIODE 36VWM DO218AB
- Quantity:
- Payment:

- Shipping:

Inventory:7,832
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Product details
Overview
SM8S36-2HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 36 V stand-off voltage (VWM), 42.1 V nominal breakdown (VBR), 58.1 V clamping voltage at 114 A peak pulse current, and 6600 W peak pulse power (10/1000 μs). It delivers automotive-grade protection against load dump transients in 12 V/24 V systems.
For engineers reviewing the SM8S36-2HE3_A/I datasheet, SM8S36-2HE3_A/I pinout, SM8S36-2HE3_A/I application, or SM8S36-2HE3_A/I equivalent, key selection criteria include AEC-Q101 qualification, TJ = 175 °C operation, unidirectional polarity with heatsink-as-anode configuration, low leakage (<10 μA at VWM), and ISO7637-2 compliance for automotive surge immunity.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve stable clamping under high-temperature stress. Its DO-218AB package provides low thermal resistance (RθJM = 0.35 °C/W) and supports direct mounting to metal heatsinks via the anode terminal.
The device operates exclusively in unidirectional mode with polarity defined by heatsink-as-anode orientation. It meets MSL Level 1 per J-STD-020 and passes JESD201 Class 2 whisker testing, confirming robustness for automated SMT assembly in automotive production environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 36 V - Maximum continuous reverse operating voltage before clamping initiates |
| VBR (nom) | 42.1 V - Breakdown voltage at 5 mA test current; defines turn-on threshold under transient stress |
| VC @ IPPM | 58.1 V - Clamping voltage at 114 A peak pulse current; determines maximum protected circuit voltage during surge |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling capability; enables survival of severe automotive load dump events |
| TJ max | +175 °C - Maximum junction temperature; supports under-hood deployment without derating in engine control units |
| ID @ VWM | <10 μA - Reverse leakage at stand-off voltage; minimizes standby power loss in battery-sensitive systems |
| Polarity | Unidirectional - Anode connected to heatsink; requires correct PCB layout to avoid reverse-bias failure |
Pinout & Package
Package: DO-218AB - Surface-mount, thermally enhanced case with integral metal heatsink; anode terminal forms the large exposed metal base for direct thermal coupling to PCB copper or external heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current return path and thermal interface | Must be soldered to ≥100 mm² copper pour or external heatsink; electrically connects to system ground or low-side reference |
| Cathode (Lead 1) | Transient current input node | Connected to protected line (e.g., battery rail); carries full surge current into the device during clamping |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTGB, HTRB, and TCT |
| Junction passivation | Stable VBR drift <±5 % over 1000 hrs at TJ = 150 °C; ensures long-term reliability in harsh environments |
| MSL Level 1 rating | Reflow-compatible up to 245 °C peak; eliminates moisture sensitivity concerns in standard SMT lines |
| ISO7637-2 compliance | Withstands Pulse 5a (load dump) up to 40 V/100 ms on 12 V systems and Pulse 5b on 24 V systems |
| Low RθJM | 0.35 °C/W junction-to-mount thermal resistance; enables >90 % of rated PPPM even with minimal PCB copper |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Rail Clamp |
|---|---|
Use Scenario: Protects microcontroller power rails from 12 V battery load dump surges exceeding 35 V and lasting up to 400 ms. IC Role / Device Role / Timing Role: Unidirectional TVS clamps transient energy into chassis ground while maintaining <36 V DC bus integrity during normal operation. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V LDOs and MCU I/Os by limiting peak rail voltage to ≤58.1 V during worst-case ISO7637-2 Pulse 5a events. | Use Scenario: Shields LIN bus transceivers and door actuator drivers from coupled transients induced by alternator switching noise. IC Role / Device Role / Timing Role: Fast-response (sub-nanosecond) clamping element placed directly at BCM main power entry point. Use Value: Maintains signal integrity across multiple 12 V subsystems by suppressing common-mode spikes before they propagate through shared ground planes. |
| Start-Stop System Voltage Regulator Clamp | Commercial Vehicle 24 V Telematics Power Stage |
Use Scenario: Safeguards buck converter controllers during repeated engine restarts where battery voltage dips then surges rapidly. IC Role / Device Role / Timing Role: Standoff-rated protector that remains non-conductive below 36 V but clamps within 1 ns when voltage exceeds 42.1 V. Use Value: Enables reliable start-stop cycling without brownout-induced firmware resets or MOSFET gate oxide stress from overshoot. | Use Scenario: Secures LTE modem and GNSS receiver power inputs in heavy-duty truck telematics units exposed to 24 V load dump per ISO7637-2 Pulse 5b. IC Role / Device Role / Timing Role: High-energy (6600 W) transient absorber mounted directly to aluminum enclosure as heatsink. Use Value: Eliminates need for secondary TVS stages or oversized capacitors by absorbing full 24 V load dump energy in single-device solution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S36AHM3_A/I | Same VWM/VBR/PPPM specs; HM3 suffix indicates updated internal construction with improved surge lifetime | Identical footprint and electrical behavior; preferred for new designs due to enhanced reliability metrics | Select SM8S36AHM3_A/I for new designs requiring longer field life; SM8S36-2HE3_A/I remains valid for legacy BOM continuity |
| SMAJ36A | Lower PPPM (400 W vs. 6600 W); DO-214AC package; no AEC-Q101 qualification | Limited to non-automotive, low-energy circuits; unsuitable for load dump protection | Use SMAJ36A only in cost-sensitive consumer applications with sub-100 A surge exposure |
Compared with SM8S36AHM3_A/I and SMAJ36A, the SM8S36-2HE3_A/I offers automotive-grade surge capacity and thermal performance unmatched by standard SMAJ series, while retaining full compatibility with existing DO-218AB layouts-making it optimal for sustaining production of qualified automotive modules.
Availability
SM8S36-2HE3_A/I is available at Aetrix Electronics and suitable for automotive ECU power protection, body control module clamp circuits, and commercial vehicle telematics systems requiring stable component supply across extended production lifecycles.
Supply support for SM8S36-2HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8SxxA family was engineered specifically for automotive load dump protection, combining high-temperature operation, AEC-Q101 qualification, and industry-leading 6600 W surge capability in the DO-218AB package.
FAQ
What is the maximum clamping voltage of the SM8S36-2HE3_A/I under a 10/1000 μs surge?
The SM8S36-2HE3_A/I has a maximum clamping voltage (VC) of 58.1 V when subjected to its rated peak pulse current of 114 A under the 10/1000 μs waveform. This value is measured per JEDEC standards and guarantees that downstream circuitry remains below critical overvoltage thresholds during standardized automotive surge events. The SM8S36-2HE3_A/I maintains this clamping performance across its full operating temperature range.
Is the SM8S36-2HE3_A/I suitable for 24 V automotive systems?
Yes, the SM8S36-2HE3_A/I is explicitly rated for 24 V system load dump protection per ISO7637-2 Pulse 5b. Its 36 V stand-off voltage provides sufficient margin above nominal 24 V rails, while its 6600 W peak pulse power rating handles the higher energy content typical of commercial vehicle alternator transients. The SM8S36-2HE3_A/I's TJ = 175 °C rating ensures stable operation in under-hood environments common in heavy-duty applications.
Does the SM8S36-2HE3_A/I require a heatsink for full power operation?
The SM8S36-2HE3_A/I uses the DO-218AB package with an integrated metal heatsink terminal (anode), which serves as both electrical connection and primary thermal path. Full 6600 W pulse power capability is achieved when the anode is soldered to ≥100 mm² of 2 oz. copper or attached to an external metal chassis. No additional discrete heatsink is required, but thermal design must ensure low RθJA per the datasheet's footprint guidelines to maintain safe junction temperatures.
What does the "-2H" in SM8S36-2HE3_A/I indicate?
The "-2H" suffix in SM8S36-2HE3_A/I denotes two key attributes: "2" specifies the 8 W power dissipation rating (PD), and "H" confirms AEC-Q101 qualification. This distinguishes it from non-automotive variants (e.g., "-2") and aligns with Vishay's ordering nomenclature where H = automotive grade. The SM8S36-2HE3_A/I thus meets all stress tests required for automotive electronic control units.
Can the SM8S36-2HE3_A/I replace older SM8S36A devices in existing designs?
Yes, the SM8S36-2HE3_A/I is a direct replacement for legacy SM8S36A parts in DO-218AB layouts, sharing identical electrical specifications, pinout, and thermal characteristics. It retains the same 36 V VWM, 42.1 V VBR, and 58.1 V VC ratings. The "E3" suffix confirms RoHS compliance and Pb-free terminations, while "A/I" indicates tape-and-reel packaging with anode orientation toward sprocket holes-ensuring seamless integration into existing SMT processes.
SM8S36-2HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40V
- Voltage - Clamping (Max) @ Ipp:
- 58.1V
- Current - Peak Pulse (10/1000µs):
- 114A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S36-2HE3_A/I FAQ
1.How can I place an order for SM8S36-2HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S36-2HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S36-2HE3_A/I reliable?
The price and inventory of SM8S36-2HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S36-2HE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S36-2HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S36-2HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S36-2HE3_A/I?
SM8S36-2HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S36-2HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S36-2HE3_A/I?
For technical support, including SM8S36-2HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S36-2HE3_A/I requirements.
6.How does Aetrix verify that SM8S36-2HE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S36-2HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S36-2HE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S36-2HE3_A/I?
All SM8S36-2HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S36-2HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S36-2HE3_A/I part is unused and in its original packaging.
Return procedure for SM8S36-2HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S36-2HE3_A/I Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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