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Vishay General Semiconductor - Diodes Division SM8S36-7000HE3_A/I
- Part No.:
- SM8S36-7000HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S36-7000HE3_A/I.pdf
- Description:
- TVS DIODE 36VWM DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,331
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Product details
Overview
SM8S36-7000HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in DO-218AB package, rated for 36 V stand-off voltage (VWM), 42.1 V nominal breakdown (VBR), 58.1 V clamping voltage at 114 A peak pulse current, and 6600 W peak pulse power (10/1000 μs). It delivers automotive-grade surge protection for load dump events in 12 V/24 V vehicle electrical systems.
For engineers reviewing the SM8S36-7000HE3_A/I datasheet, SM8S36-7000HE3_A/I pinout, SM8S36-7000HE3_A/I application, or SM8S36-7000HE3_A/I equivalent, key selection criteria include its AEC-Q101 qualification, TJ = 175 °C operation, 0.35 °C/W junction-to-mount thermal resistance, and ISO7637-2 compliance for automotive transients - all critical for under-hood power rail protection.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve low leakage (<10 μA at VWM) and low forward voltage drop (<1.8 V at 100 A), enabling efficient clamping without excessive conduction loss during surge events. Its DO-218AB package integrates a metal heatsink as the anode terminal, providing direct thermal path to PCB copper and supporting high-reliability mounting per JESD 22-B102.
The device is characterized for 10/1000 μs and 10/10 000 μs waveforms, with derated peak pulse power down to 5200 W for longer transients. Its temperature coefficient of VBR is +0.091 %/°C, allowing predictable breakdown shift across -55 °C to +175 °C operating range - essential for engine compartment deployments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 36 V - maximum continuous reverse voltage before clamping begins; defines safe operating margin for 24 V automotive systems. |
| VBR (nom) | 42.1 V - nominal breakdown voltage at 5 mA test current; triggers clamping within ±5 % tolerance (A grade). |
| VC @ IPPM | 58.1 V - clamping voltage at 114 A peak pulse current (10/1000 μs); limits downstream voltage stress during load dump. |
| PPPM (10/1000 μs) | 6600 W - peak pulse power handling; supports high-energy transients per ISO7637-2 Pulse 5a. |
| TJ max | +175 °C - maximum junction temperature; enables placement near heat sources in engine control units. |
| RθJM | 0.35 °C/W - junction-to-mount thermal resistance; ensures effective heat transfer to heatsink or PCB copper pour. |
| ID @ VWM | <10 μA - reverse leakage at 36 V and 25 °C; minimizes standby power loss in always-on vehicle modules. |
Pinout & Package
Package: DO-218AB - surface-mount, anode-heatsink configuration with matte tin-plated leads, UL 94 V-0 molding compound, and JESD 201 Class 2 whisker resistance. Mounting pad layout follows IPC-7351 standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Positive terminal / thermal interface | Electrically connected to metal heatsink base; must be soldered to large copper area for thermal management and low-inductance return path. |
| Cathode | Transient current sink | Connected to protected line (e.g., battery rail); conducts surge current to ground/anode during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, mechanical shock, and humidity testing - required for ECU and body control module deployment. |
| Junction passivation | Optimized anisotropic rectifier structure reduces leakage and improves long-term reliability under high-temperature bias stress. |
| MSL Level 1 | Moisture sensitivity level 1 per J-STD-020 - no dry pack or bake required prior to reflow; compatible with standard SMT assembly. |
| ISO7637-2 compliant | Meets Pulse 5a (load dump) requirements for 12 V and 24 V systems - verified clamping performance under standardized automotive surge profiles. |
| Low VF at high IF | ≤1.8 V forward voltage at 100 A (300 μs pulse); minimizes conduction loss during bidirectional fault conditions or reverse polarity protection setups. |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Rail Clamping |
|---|---|
Use Scenario: Protects microcontroller power supply against 12 V system load dump surges up to 35 V and 100 ms duration. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery rail and input filter capacitor, clamping transients before LDO or DC/DC converter. Use Value: Limits voltage to ≤58.1 V during 114 A surge, preventing overvoltage damage to 40 V-rated input stages while maintaining AEC-Q101 compliance. |
Use Scenario: Shields BCM power domain from alternator-induced transients during ignition switch-off in 24 V commercial vehicles. IC Role / Device Role / Timing Role: Primary clamping device on main 24 V input, coordinated with upstream fuse and downstream LC filter. Use Value: Handles 6600 W peak pulse energy without degradation, ensuring >100,000 surge cycles under real-world duty cycles per ISO7637-2. |
| Advanced Driver Assistance Systems (ADAS) Camera Power Line | Electric Power Steering (EPS) Motor Driver Supply |
Use Scenario: Safeguards image sensor and SerDes IC power rails from coupled transients generated by nearby solenoid actuation. IC Role / Device Role / Timing Role: Localized TVS mounted adjacent to camera module connector, minimizing trace inductance to ensure sub-100 ns response. Use Value: Achieves <10 μA leakage at 36 V, avoiding signal integrity impact on low-noise analog power domains while sustaining 175 °C junction temperature. |
Use Scenario: Protects H-bridge gate driver ICs and current sense amplifiers from inductive kickback during EPS motor commutation. IC Role / Device Role / Timing Role: Bidirectionally referenced TVS (anode grounded, cathode on supply rail) used in conjunction with reverse polarity protection MOSFET. Use Value: Delivers 700 A non-repetitive surge capability (IFSM), surviving repeated motor stall events without parametric shift or thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S36AHM3_A/I | Same VWM/VBR/VC specs; HM3 suffix indicates enhanced MSL Level 1 robustness and tighter VBR tolerance (±3 % vs. ±5 %). | Preferred for new designs targeting higher surge consistency and extended reflow process margin. | Select SM8S36AHM3_A/I when upgrading from legacy HE3 design or requiring tighter parametric control. |
| SMAJ36A | Lower PPPM (400 W vs. 6600 W), DO-214AC package, no AEC-Q101 qualification, RθJA = 55 °C/W (vs. RθJM = 0.35 °C/W). | Limited to low-energy consumer or industrial applications; unsuitable for automotive load dump. | Use SMAJ36A only in cost-sensitive, non-automotive designs where surge energy is below 100 W. |
Compared with SM8S36-7000HE3_A/I, SM8S36AHM3_A/I offers improved manufacturing consistency and tighter VBR control for next-gen automotive platforms, while SMAJ36A provides basic clamping at drastically reduced surge capacity and thermal performance - making it incompatible with ISO7637-2 Pulse 5a requirements.
Availability
SM8S36-7000HE3_A/I is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, ADAS camera systems, and electric power steering systems requiring stable component supply across extended production lifecycles.
Supply support for SM8S36-7000HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8SxxA family is engineered specifically for high-energy automotive transient suppression, emphasizing AEC-Q101 qualification, 175 °C operation, and ISO7637-2 compliance - addressing the demanding thermal and surge requirements of modern vehicle power architectures.
FAQ
What is the clamping voltage of SM8S36-7000HE3_A/I at its rated peak pulse current?
The SM8S36-7000HE3_A/I has a maximum clamping voltage (VC) of 58.1 V at 114 A peak pulse current (IPPM) under the 10/1000 μs waveform. This value is measured per standard test conditions in the Vishay datasheet (Document Number 88387, page 2) and defines the upper voltage limit imposed on protected circuitry during worst-case surge events.
Is SM8S36-7000HE3_A/I qualified for automotive applications?
Yes, SM8S36-7000HE3_A/I is AEC-Q101 qualified and rated for operation from -55 °C to +175 °C junction temperature. It meets ISO7637-2 Pulse 5a load dump requirements and is explicitly intended for automotive power rail protection - confirmed in the Vishay datasheet revision 06-Feb-2026, section "FEATURES" and "TYPICAL APPLICATIONS".
What does the "HE3_A/I" suffix mean in SM8S36-7000HE3_A/I?
The "HE3" suffix denotes RoHS-compliant, Pb-free termination with JESD 201 Class 2 whisker resistance; "A" indicates ±5 % breakdown voltage tolerance and unidirectional polarity; "I" specifies the preferred packaging code for 13-inch tape-and-reel delivery with anode orientation toward sprocket holes - per Vishay's Ordering Information Table (page 3, Document 88387).
Can SM8S36-7000HE3_A/I replace SM8S36AHE3 in a design?
Yes, SM8S36-7000HE3_A/I is functionally identical to SM8S36AHE3 - both share identical electrical specifications (VWM = 36 V, VBR = 42.1 V, VC = 58.1 V), DO-218AB package, AEC-Q101 qualification, and thermal characteristics. The "7000" in the part number reflects internal Vishay lot or revision coding and does not indicate a parametric change.
What is the thermal resistance from junction to mount for SM8S36-7000HE3_A/I?
The SM8S36-7000HE3_A/I has a typical junction-to-mount thermal resistance (RθJM) of 0.35 °C/W, measured per JEDEC 51-14 using the Transient Dual Interface Method. This low value is enabled by the DO-218AB package's integrated metal heatsink (anode), which must be soldered to a thermally robust PCB copper area for optimal performance.
SM8S36-7000HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40V
- Voltage - Clamping (Max) @ Ipp:
- 58.1V
- Current - Peak Pulse (10/1000µs):
- 114A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S36-7000HE3_A/I FAQ
1.How can I place an order for SM8S36-7000HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S36-7000HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S36-7000HE3_A/I reliable?
The price and inventory of SM8S36-7000HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S36-7000HE3_A/I is usually 5 days.
3.What payment methods are accepted for SM8S36-7000HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S36-7000HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S36-7000HE3_A/I?
SM8S36-7000HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S36-7000HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S36-7000HE3_A/I?
For technical support, including SM8S36-7000HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S36-7000HE3_A/I requirements.
6.How does Aetrix verify that SM8S36-7000HE3_A/I is sourced from the original manufacturer or authorized distributors?
All SM8S36-7000HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S36-7000HE3_A/I meets industry standards.
7.What is the process for return or replacement of SM8S36-7000HE3_A/I?
All SM8S36-7000HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S36-7000HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S36-7000HE3_A/I part is unused and in its original packaging.
Return procedure for SM8S36-7000HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S36-7000HE3_A/I Tags
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