My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM8S36AHE3/2D
- Part No.:
- SM8S36AHE3/2D
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S36AHE3/2D.pdf
- Description:
- TVS DIODE 36VWM 58.1VC DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,569
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM8S36AHE3/2D from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor designed for automotive load dump protection in 12 V and 24 V systems. It features a 36.0 V stand-off voltage (VWM), 40.0–44.2 V breakdown voltage (VBR), 64.3 V clamping voltage (VC) at 114 A peak pulse current, and 6600 W peak pulse power (10/1000 μs), operating up to TJ = 175 °C.
For engineers reviewing the SM8S36AHE3/2D datasheet, SM8S36AHE3/2D pinout, SM8S36AHE3/2D application, or SM8S36AHE3/2D equivalent, key selection criteria include unidirectional polarity, DO-218AB package thermal performance (RθJC = 0.90 °C/W), AEC-Q101 qualification, ISO7637-2 compliance, and 175 °C junction temperature capability for under-hood automotive environments.
Technical Context
The SM8S36AHE3/2D uses passivated anisotropic rectifier technology optimized for high-temperature stability and low leakage (<10 μA at VWM). Its unidirectional configuration places the heatsink as the anode, enabling robust clamping during positive transients such as ISO 7637-2 Load Dump pulses.
It delivers 6600 W surge handling with 10/1000 μs waveform and maintains stable operation across -55 °C to +175 °C junction temperature range. The device is rated for 700 A non-repetitive forward surge current (8.3 ms half-sine) and exhibits VF ≤ 1.8 V at 100 A, supporting high-current transient suppression without excessive forward conduction loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 36.0 V - Maximum reverse working voltage before clamping begins; defines safe operating margin in 24 V automotive systems. |
| VBR (min/max) | 40.0 V / 44.2 V - Breakdown occurs within this range at 5 mA test current; ensures predictable turn-on threshold. |
| VC @ IPPM | 58.1 V - Clamping voltage at 114 A peak pulse current; limits downstream voltage stress during load dump events. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power rating; supports high-energy transients per ISO 7637-2 Pulse 5a. |
| TJ max. | +175 °C - Maximum junction temperature; enables placement near hot engine compartments without derating. |
| RθJC | 0.90 °C/W - Junction-to-case thermal resistance; allows effective heat transfer to PCB copper or external heatsink. |
| Polarity | Unidirectional - Anode connected to heatsink; suitable only for suppressing positive-going transients on power rails. |
Pinout & Package
Package: DO-218AB - Surface-mount, thermally enhanced case with integral metal heatsink (anode terminal); meets UL 94 V-0, MSL Level 1, and JESD201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit node; carries clamped transient current to ground or return path. |
| Lead 2 / Metal Heatsink | Anode | Primary thermal path and electrical anode connection; must be soldered to large copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress test plan. |
| Junction passivation | Optimized anisotropic rectifier structure reduces leakage drift and improves long-term stability at 175 °C. |
| ISO 7637-2 compliance | Meets Pulse 5a (load dump) requirements for 12 V and 24 V vehicle electrical systems. |
| Low VF at high IF | ≤1.8 V forward voltage at 100 A enables minimal conduction loss during high-current surge events. |
| MSL Level 1 | Rated for reflow up to 245 °C peak; no floor life limitation or baking required prior to assembly. |
Applications
| Engine Control Unit (ECU) Power Input | Body Control Module (BCM) Supply Rail |
|---|---|
Use Scenario: Protecting microcontroller power inputs against alternator load dump surges during battery disconnection. IC Role / Device Role / Timing Role: Unidirectional TVS clamps positive transients on 24 V supply rail before they reach LDOs and MCU VDD pins. Use Value: Limits clamped voltage to 58.1 V at 114 A, preventing overvoltage damage to 40 V-rated input stages in automotive MCUs. | Use Scenario: Safeguarding LIN bus transceivers and sensor interfaces powered from switched 12 V distribution lines. IC Role / Device Role / Timing Role: Absorbs inductive kickback from relay coils and motor drivers sharing the same supply net. Use Value: Delivers 6600 W surge capacity with <10 μA leakage at 36 V, preserving sleep-mode current budgets in always-on modules. |
| ADAS Camera Power Module | Electric Power Steering (EPS) ECU |
Use Scenario: Shielding image sensor and SerDes IC power supplies from transients generated by nearby DC-DC converters and solenoids. IC Role / Device Role / Timing Role: Fast-response unidirectional clamp placed upstream of buck regulators feeding CMOS image sensors. Use Value: 0.90 °C/W RθJC enables direct thermal coupling to inner-layer copper, sustaining repeated 10/1000 μs surges without thermal runaway. | Use Scenario: Protecting gate drivers and current sense amplifiers in high-power motor control circuits exposed to battery reversal and load dump. IC Role / Device Role / Timing Role: Primary front-end transient suppressor on main 12 V input, coordinated with secondary TVS and fuses. Use Value: AEC-Q101 qualification and 175 °C operation ensure functional safety compliance in ASIL-B EPS systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ36A-E3/5AT | Lower PPPM (400 W vs. 6600 W); DO-214AC package; RθJC not specified; 150 °C max TJ. | Not suitable for load dump; limited to ESD and low-energy transients in consumer or industrial power rails. | Select only for cost-sensitive, non-automotive applications where surge energy is <500 W. |
| TPSMD36A | Same DO-218AB package; 6600 W PPPM; but VBR min = 40.0 V, max = 48.9 V (wider tolerance); no AEC-Q101 documentation confirmed. | May require additional qualification for automotive use; wider VBR spread affects clamping consistency. | Consider for industrial designs needing high surge rating but without mandatory AEC-Q101 certification. |
Compared with SMAJ36A-E3/5AT and TPSMD36A, the SM8S36AHE3/2D uniquely combines AEC-Q101 qualification, 175 °C operation, tight VBR (40.0–44.2 V), and documented ISO 7637-2 compliance-making it the only option qualified for front-end load dump protection in production automotive ECUs.
Availability
SM8S36AHE3/2D is available at Aetrix Electronics and suitable for automotive electronics, engine control units, and ADAS camera modules requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant transient protection.
Supply support for SM8S36AHE3/2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, thermal performance, and automotive qualification.
The SM8SxxA family is engineered specifically for high-energy automotive transient suppression, targeting load dump, inductive switching, and ISO 7637-2 Pulse 5a compliance in harsh under-hood environments.
FAQ
What is the maximum clamping voltage of the SM8S36AHE3/2D at its rated peak pulse current?
The SM8S36AHE3/2D has a maximum clamping voltage (VC) of 58.1 V when subjected to its rated peak pulse current (IPPM) of 114 A using a 10/1000 μs waveform. This value is measured per standard test conditions at TC = 25 °C and ensures downstream components see limited overvoltage during automotive load dump events. The SM8S36AHE3/2D maintains this clamping performance across its full operating temperature range.
Is the SM8S36AHE3/2D suitable for bidirectional transient suppression?
No, the SM8S36AHE3/2D is unidirectional only, with the metal heatsink serving as the anode. It suppresses positive transients on the cathode side and conducts like a forward-biased diode during negative excursions. For bidirectional protection, a separate device or a dedicated bidirectional TVS such as the SMBJ36CA would be required. The SM8S36AHE3/2D datasheet explicitly states "Available in uni-directional polarity only."
Does the SM8S36AHE3/2D meet AEC-Q101 qualification, and what does that cover?
Yes, the SM8S36AHE3/2D is AEC-Q101 qualified, as confirmed in the Vishay document 88387 (Revision: 31-Aug-16). This qualification covers stress tests including high-temperature reverse bias (HTRB), temperature cycling, mechanical shock, and ESD (HBM ≥ 8 kV), validating reliability for automotive under-hood applications. The HE3 suffix further indicates RoHS compliance and JESD201 Class 2 whisker resistance.
What is the thermal resistance from junction to case (RθJC) for the SM8S36AHE3/2D, and why does it matter?
The SM8S36AHE3/2D has a typical junction-to-case thermal resistance (RθJC) of 0.90 °C/W. This low value is critical because it enables efficient heat transfer from the silicon die to the metal heatsink (Lead 2), allowing the device to sustain repeated high-energy transients without thermal runaway. In practice, this requires mounting the heatsink to ≥1 in² of 2 oz copper on the PCB for optimal derating per Vishay's power derating curve.
How does the SM8S36AHE3/2D differ from the non-A version, SM8S36HE3/2D?
The SM8S36AHE3/2D has a tighter breakdown voltage tolerance (40.0–44.2 V) versus the SM8S36HE3/2D (40.0–48.9 V), resulting in more consistent clamping behavior. Both share identical package (DO-218AB), power rating (6600 W), and AEC-Q101 qualification. The "A" suffix denotes ±5 % VBR tolerance, while the base version offers ±10 %, making the SM8S36AHE3/2D preferable for designs requiring precise overvoltage threshold control.
SM8S36AHE3/2D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40V
- Voltage - Clamping (Max) @ Ipp:
- 58.1V
- Current - Peak Pulse (10/1000µs):
- 114A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S36AHE3/2D FAQ
1.How can I place an order for SM8S36AHE3/2D through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S36AHE3/2D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S36AHE3/2D reliable?
The price and inventory of SM8S36AHE3/2D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S36AHE3/2D is usually 5 days.
3.What payment methods are accepted for SM8S36AHE3/2D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S36AHE3/2D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S36AHE3/2D?
SM8S36AHE3/2D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S36AHE3/2D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S36AHE3/2D?
For technical support, including SM8S36AHE3/2D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S36AHE3/2D requirements.
6.How does Aetrix verify that SM8S36AHE3/2D is sourced from the original manufacturer or authorized distributors?
All SM8S36AHE3/2D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S36AHE3/2D meets industry standards.
7.What is the process for return or replacement of SM8S36AHE3/2D?
All SM8S36AHE3/2D units undergo pre-shipment inspection (PSI). If there is an issue with SM8S36AHE3/2D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S36AHE3/2D part is unused and in its original packaging.
Return procedure for SM8S36AHE3/2D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S36AHE3/2D Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
