My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM8S36ATHE3/I
- Part No.:
- SM8S36ATHE3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AC
- Datasheet:
-
SM8S36ATHE3/I.pdf
- Description:
- TVS DIODE 36VWM 58.1VC DO218AC
- Quantity:
- Payment:
- Shipping:
Inventory:1,838
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM8S36ATHE3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a breakdown voltage of 40.0–44.2 V at 5 mA, clamps transients to ≤58.1 V at 114 A (10/1000 μs), delivers 6600 W peak pulse power, and operates up to TJ = 175 °C - meeting AEC-Q101 qualification for under-hood electronics.
For engineers reviewing the SM8S36ATHE3/I datasheet, SM8S36ATHE3/I pinout, SM8S36ATHE3/I application, or SM8S36ATHE3/I equivalent, key selection criteria include its DO-218AC package thermal resistance (RθJC = 0.90 °C/W), unidirectional polarity with heatsink-as-anode configuration, ISO7637-2 compliance, and 10 μA max reverse leakage at 36 V standoff.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low forward voltage drop (≤1.8 V at 100 A). Its junction-to-case thermal resistance of 0.90 °C/W enables effective heat transfer to a heatsink, supporting sustained operation at TJ = 175 °C in automotive environments.
The device is rated for 700 A non-repetitive forward surge current (8.3 ms half-sine) and exhibits a typical VBR temperature coefficient of +0.091 %/°C - enabling predictable voltage shift across temperature for robust system-level transient margining.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 40.0 / 42.1 / 44.2 V @ IT = 5 mA - defines precise clamping onset threshold for load dump events |
| VWM | 36.0 V - maximum continuous reverse operating voltage before significant leakage |
| VC @ IPPM | ≤58.1 V @ 114 A (10/1000 μs) - ensures downstream ICs see safe clamped voltage during surges |
| PPPM (10/1000 μs) | 6600 W - supports high-energy automotive transients without failure |
| TJ max. | +175 °C - enables placement near hot engine compartments with AEC-Q101 reliability validation |
| RθJC | 0.90 °C/W - allows accurate thermal design when mounted to metal heatsink |
| Polarity | Unidirectional, anode = heatsink - dictates PCB layout and grounding strategy |
Pinout & Package
Package: DO-218AC - surface-mount, thermally enhanced case with integral metal heatsink; anode terminal is the metal base (lead 2), cathode is lead 1; meets UL 94 V-0, MSL Level 1, and JESD201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Cathode | Connected to protected circuit's positive rail; carries surge current into device during clamping |
| Lead 2 / Metal Heatsink | Anode | Must be soldered to large copper pour or external heatsink; primary thermal path and DC return node |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Enables stable leakage performance (<10 μA at VWM, <15 μA at TJ = 175 °C) over lifetime |
| AEC-Q101 qualification | Validates reliability for automotive under-hood applications including temperature cycling and humidity exposure |
| ISO7637-2 compliance | Guarantees survivability against standardized automotive load dump waveforms (e.g., Pulse 5a) |
| Low VF (≤1.8 V @ 100 A) | Minimizes conduction losses and self-heating during high-current surge events |
| DO-218AC mechanical robustness | Supports automated SMT assembly and withstands mechanical stress in vibration-prone environments |
Applications
| Engine Control Unit (ECU) Power Input Protection | Body Control Module (BCM) Battery Line Protection |
|---|---|
Use Scenario: Protects ECU 12 V input from alternator load dump spikes during battery disconnection. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input filter capacitor; clamps transients within nanoseconds. Use Value: Limits voltage to ≤58.1 V during 6600 W surges, preventing damage to downstream DC/DC controllers and microcontrollers. | Use Scenario: Safeguards BCM power supply against jump-start transients and generator regulation faults. IC Role / Device Role / Timing Role: Primary transient suppressor on main 12 V distribution line; operates alongside fuse and LC filter. Use Value: Withstands 700 A forward surge (8.3 ms) and maintains <10 μA leakage at 36 V, ensuring low standby power loss. |
| Advanced Driver Assistance Systems (ADAS) Camera Power Rail | Electric Power Steering (EPS) Motor Driver Supply |
Use Scenario: Shields high-resolution camera module power input from ignition-induced transients in vehicle start-stop cycles. IC Role / Device Role / Timing Role: Fast-response clamping device placed immediately after connector; anode tied to chassis ground via heatsink. Use Value: Delivers 175 °C junction rating and 0.90 °C/W RθJC, enabling reliable operation in confined, thermally constrained camera housings. | Use Scenario: Protects EPS H-bridge driver ICs from inductive kickback during motor commutation and fault shutdown. IC Role / Device Role / Timing Role: High-power TVS on motor supply rail; absorbs energy from Ldi/dt events before reaching gate drivers. Use Value: Clamps 10/1000 μs surges to ≤58.1 V while handling 114 A peak current - preserving MOSFET gate oxide integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S36AHM3 | Same electrical specs; HM3 suffix indicates halogen-free, matte tin-plated leads per JESD22-B102, no HE3 whisker test requirement | Preferred for new designs where RoHS + halogen-free compliance is mandatory; not qualified to JESD201 Class 2 whisker standard | Select SM8S36AHM3 for new automotive programs requiring updated material compliance; SM8S36ATHE3/I remains valid for legacy production with whisker-critical mounting. |
| TPSMD36CA | Bidirectional variant; VBR = 40.0–44.2 V; same DO-218AC package but symmetrical clamping (VBR±); higher ID at VWM (50 μA vs. 10 μA) | Suitable for AC-coupled or bidirectional signal lines; not appropriate for unidirectional battery rails where reverse polarity must be blocked | Choose TPSMD36CA only if bidirectional protection is required; SM8S36ATHE3/I is strictly unidirectional and optimized for DC power line suppression. |
Compared with SM8S36AHM3 and TPSMD36CA, the SM8S36ATHE3/I provides verified JESD201 Class 2 whisker resistance and AEC-Q101 qualification for legacy automotive platforms, while maintaining identical clamping performance and thermal capability - making it the preferred choice where long-term reliability under mechanical stress is critical.
Availability
SM8S36ATHE3/I is available at Aetrix Electronics and suitable for automotive ECU protection, body control modules, ADAS camera power supplies, and electric power steering systems requiring stable component supply across extended product lifecycles.
Supply support for SM8S36ATHE3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability and automotive-grade solutions.
The SM8SxxAT family was engineered specifically for automotive load dump protection, combining high-temperature operation, ISO7637-2 compliance, and DO-218AC thermal efficiency to replace older SMA/SMB-based TVS solutions in next-generation vehicle electronics.
FAQ
What is the maximum clamping voltage of the SM8S36ATHE3/I during a 10/1000 μs transient?
The SM8S36ATHE3/I has a maximum clamping voltage (VC) of 58.1 V when subjected to its rated peak pulse current of 114 A with a 10/1000 μs waveform. This value is guaranteed across manufacturing lots and temperature range, and is measured at TC = 25 °C per the Vishay datasheet Document Number 87734. The SM8S36ATHE3/I maintains this clamping performance while dissipating up to 6600 W of transient energy.
Is the SM8S36ATHE3/I suitable for new automotive designs?
No - Vishay explicitly marks the SM8S36ATHE3/I as "Not For New Designs" in its official documentation, recommending SM8S36AHM3 as the alternative. The SM8S36ATHE3/I remains fully supported for existing production and legacy programs, especially where JESD201 Class 2 whisker resistance is required. For new designs, engineers should evaluate the SM8S36AHM3, which offers identical electrical performance with updated material compliance.
How is the anode terminal configured on the SM8S36ATHE3/I DO-218AC package?
On the SM8S36ATHE3/I, the anode is the metal heatsink base (lead 2), and the cathode is lead 1. This configuration requires the metal base to be soldered directly to a large copper pour or external heatsink, serving as both the electrical anode connection and primary thermal path. The polarity is unidirectional only, and reversing the device will prevent proper clamping function.
Does the SM8S36ATHE3/I meet ISO7637-2 requirements?
Yes - the SM8S36ATHE3/I meets ISO7637-2 surge specifications under defined test conditions, including Pulse 5a (load dump). Its 6600 W peak pulse power rating and 58.1 V clamping voltage enable compliance with the standard's energy thresholds when properly mounted with adequate heatsinking. Confirmation is provided in Vishay's datasheet revision 21-Mar-2024, Document Number 87734.
What is the thermal resistance from junction to case (RθJC) for the SM8S36ATHE3/I?
The SM8S36ATHE3/I has a typical thermal resistance of 0.90 °C/W from junction to case (RθJC), measured under standard test conditions. This low value reflects the efficient thermal path through the DO-218AC metal heatsink base and is critical for sustaining high-power transients without exceeding the 175 °C maximum junction temperature. Engineers must ensure the heatsink interface achieves low thermal impedance to realize this spec.
SM8S36ATHE3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40V
- Voltage - Clamping (Max) @ Ipp:
- 58.1V
- Current - Peak Pulse (10/1000µs):
- 114A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AC
SM8S36ATHE3/I FAQ
1.How can I place an order for SM8S36ATHE3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S36ATHE3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S36ATHE3/I reliable?
The price and inventory of SM8S36ATHE3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S36ATHE3/I is usually 5 days.
3.What payment methods are accepted for SM8S36ATHE3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S36ATHE3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S36ATHE3/I?
SM8S36ATHE3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S36ATHE3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S36ATHE3/I?
For technical support, including SM8S36ATHE3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S36ATHE3/I requirements.
6.How does Aetrix verify that SM8S36ATHE3/I is sourced from the original manufacturer or authorized distributors?
All SM8S36ATHE3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S36ATHE3/I meets industry standards.
7.What is the process for return or replacement of SM8S36ATHE3/I?
All SM8S36ATHE3/I units undergo pre-shipment inspection (PSI). If there is an issue with SM8S36ATHE3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S36ATHE3/I part is unused and in its original packaging.
Return procedure for SM8S36ATHE3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S36ATHE3/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
