My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SM8S43A-71HE4_A/J
- Part No.:
- SM8S43A-71HE4_A/J
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-218AB
- Datasheet:
-
SM8S43A-71HE4_A/J.pdf
- Description:
- TVS DIODE 43VWM DO218AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,491
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SM8S43A-71HE4_A/J from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive load dump protection. It features a 43 V stand-off voltage (VWM), 50.3 V nominal breakdown voltage (VBR), 6600 W peak pulse power (10/1000 μs), 95.1 A peak pulse current, and AEC-Q101 qualification for under-hood applications.
For engineers reviewing the SM8S43A-71HE4_A/J datasheet, SM8S43A-71HE4_A/J pinout, SM8S43A-71HE4_A/J application, or SM8S43A-71HE4_A/J equivalent, key selection criteria include clamping voltage (69.4 V at IPPM), junction temperature capability (−55 °C to +175 °C), DO-218AB package thermal resistance (RθJM = 0.35 °C/W), and ISO7637-2 compliance for automotive transients.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-reliability automotive environments. Its unidirectional configuration and heatsink-anode polarity enable direct mounting to metal chassis for low-inductance surge path and efficient thermal dissipation in 12 V/24 V vehicle electrical systems.
The device delivers stable clamping performance across its full operating temperature range (−55 °C to +175 °C), with a VBR temperature coefficient of 0.093 %/°C and low leakage (<10 μA at VWM, <150 μA at TJ = 175 °C), ensuring robust protection during cold cranking and hot soak conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 43 V - Maximum continuous reverse operating voltage before clamping begins; defines system-level DC bus rating compatibility. |
| VBR (nom) | 50.3 V - Breakdown voltage at 5 mA test current; ensures reliable turn-on before downstream IC damage thresholds. |
| VC @ IPPM | 69.4 V - Clamping voltage at 95.1 A peak pulse; limits protected circuit voltage during 10/1000 μs load dump events. |
| PPPM (10/1000 μs) | 6600 W - Peak pulse power handling; supports ISO7637-2 Pulse 5a/b load dump waveforms without failure. |
| TJ max | +175 °C - Maximum junction temperature; enables placement near high-heat sources (e.g., engine control units). |
| RθJM | 0.35 °C/W - Junction-to-mount thermal resistance; allows direct heatsink mounting for sustained 8 W power dissipation. |
| AEC-Q101 | Qualified - Certified for automotive-grade reliability per stress test requirements including HTGB, HTRB, and TCT. |
Pinout & Package
Package: DO-218AB - Surface-mount, anode-heatsink configuration with matte tin-plated leads; meets UL 94 V-0, MSL Level 1, and JESD201 Class 2 whisker requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Current entry point during clamping | Electrically and thermally connected to metal heatsink; must be soldered to large copper area for RθJM = 0.35 °C/W performance. |
| Cathode | Current exit point during clamping | Connected to protected line (e.g., battery rail); forms low-inductance path to ground via PCB trace or chassis. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier structure reduces leakage drift over lifetime and temperature cycling. |
| High-temperature operation | Rated for continuous use up to +175 °C junction temperature-enables placement in engine compartment ECUs. |
| Automotive qualification | AEC-Q101 qualified and ISO7637-2 compliant-meets OEM requirements for load dump immunity without derating. |
| Low clamping ratio | VC/VBR = 69.4/50.3 ≈ 1.38-minimizes overvoltage stress on downstream 75 V-rated MOSFETs and regulators. |
| Robust surge rating | 700 A IFSM (8.3 ms half-sine)-survives repeated jump-start and alternator field collapse events. |
Applications
| Automotive Load Dump Protection | Engine Control Unit (ECU) Power Input |
|---|---|
|
Use Scenario: Protecting 12 V vehicle battery rails from ISO7637-2 Pulse 5a (load dump) transients up to 40 V × 400 ms. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between battery input and DC-DC converter input stage. Use Value: Limits transient voltage to ≤69.4 V, preventing damage to 75 V-rated input MOSFETs and enabling single-stage protection without series resistors. |
Use Scenario: Safeguarding microcontroller power supply inputs in under-hood ECUs exposed to thermal cycling and vibration. IC Role / Device Role / Timing Role: Primary overvoltage suppression device mounted directly to metal ECU housing as heatsink. Use Value: Maintains clamping stability from −40 °C to +150 °C ambient due to 0.093 %/°C VBR tempco and 175 °C TJ rating. |
| Body Control Module (BCM) Power Rail | ADAS Camera Power Interface |
|
Use Scenario: Securing 24 V supply lines in commercial vehicle BCMs subject to alternator ripple and switching noise. IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 43 V) placed upstream of LDO regulators and CAN transceivers. Use Value: Delivers <10 μA leakage at 43 V, minimizing quiescent current impact on always-on modules. |
Use Scenario: Protecting 12 V camera module inputs against ESD and load dump in rear-view and surround-view systems. IC Role / Device Role / Timing Role: High-power TVS integrated into compact camera housing with metal shield as heatsink. Use Value: Achieves 6600 W surge capacity in DO-218AB footprint-replaces bulkier DO-214AB solutions without layout change. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM8S43AHM3 | Same VWM (43 V), VBR (50.3 V), and DO-218AB package; updated revision with enhanced MSL1 process control and tighter VBR tolerance (±5 % vs ±5 % same). | Identical load dump protection function; HM3 suffix indicates newer AEC-Q101 requalification cycle with extended life testing. | Select SM8S43AHM3 for new designs requiring latest qualification evidence and long-term supply continuity. |
| SMAJ43A | Lower PPPM (400 W vs 6600 W), DO-214AC package, RθJA = 40 °C/W (no heatsink mount), VBR = 47.8–52.8 V. | Only suitable for low-energy transients (IEC61000-4-5 Level 2); cannot replace SM8S43A-71HE4_A/J in ISO7637-2 automotive load dump. | Use SMAJ43A only in non-automotive, low-power industrial applications where 6600 W surge capacity is unnecessary. |
Compared with SM8S43AHM3, the SM8S43A-71HE4_A/J shares identical electrical specs but lacks the HM3's updated manufacturing controls; versus SMAJ43A, it delivers 16.5× higher surge power and requires heatsink mounting-making it irreplaceable for automotive load dump duty.
Availability
SM8S43A-71HE4_A/J is available at Aetrix Electronics and suitable for automotive load dump protection, engine control unit (ECU) power input hardening, and body control module (BCM) 24 V rail stabilization requiring stable component supply across extended temperature and lifecycle demands.
Supply support for SM8S43A-71HE4_A/J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SM8SxxA family is engineered specifically for automotive-grade transient suppression, emphasizing high-temperature stability, AEC-Q101 compliance, and ISO7637-2 Pulse 5a/b performance in under-hood environments.
FAQ
What is the clamping voltage of SM8S43A-71HE4_A/J at its rated peak pulse current?
The SM8S43A-71HE4_A/J has a maximum clamping voltage (VC) of 69.4 V when subjected to its 95.1 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is measured at TA = 25 °C and ensures protected circuits remain below critical overvoltage thresholds during automotive load dump events. The SM8S43A-71HE4_A/J maintains this clamping performance across its full −55 °C to +175 °C junction temperature range.
Is SM8S43A-71HE4_A/J suitable for new automotive designs?
No-SM8S43A-71HE4_A/J is marked "Not For New Designs" in Vishay documentation, with SM8S43AHM3 recommended as the qualified alternative. While SM8S43A-71HE4_A/J remains functional and AEC-Q101 qualified, new designs should use the HM3 variant to ensure access to updated manufacturing controls, extended lifecycle support, and latest qualification evidence. The SM8S43A-71HE4_A/J is appropriate for legacy program continuity only.
What does the "HE4_A/J" suffix indicate in SM8S43A-71HE4_A/J?
The "HE4_A/J" suffix denotes RoHS-compliant, halogen-free construction (E4), AEC-Q101 qualification (H), and packaging in 13″ plastic tape and reel with anode orientation toward sprocket holes (A/J). The "71" reflects the specific breakdown voltage bin (50.3 V nominal) and unidirectional polarity. This full ordering code ensures traceability to Vishay's DO-218AB mechanical specification and thermal performance data for SM8S43A-71HE4_A/J.
How is thermal management implemented for SM8S43A-71HE4_A/J in high-power applications?
SM8S43A-71HE4_A/J relies on its anode-heatsink configuration: the metal heatsink terminal must be soldered to a large copper area or directly to a chassis for effective heat transfer. With RθJM = 0.35 °C/W, it achieves 8 W steady-state dissipation when mounted properly. Unlike SMD diodes with RθJA > 40 °C/W, the SM8S43A-71HE4_A/J requires no additional heatsink-its DO-218AB package is designed for direct thermal coupling, making it ideal for space-constrained automotive modules.
Does SM8S43A-71HE4_A/J meet ISO7637-2 requirements?
Yes-SM8S43A-71HE4_A/J is explicitly rated to meet ISO7637-2 surge specifications for automotive applications, particularly Pulse 5a (load dump) and Pulse 5b (damped oscillatory load dump). Its 6600 W peak pulse power (10/1000 μs) and 5200 W (10/10,000 μs) ratings align with the energy requirements of these waveforms. Vishay confirms compliance in the official datasheet (Doc. #88387), and the device is AEC-Q101 qualified for this use case. SM8S43A-71HE4_A/J is validated for this role in production automotive systems.
SM8S43A-71HE4_A/J Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-218AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43V
- Voltage - Breakdown (Min):
- 47.8V
- Voltage - Clamping (Max) @ Ipp:
- 69.4V
- Current - Peak Pulse (10/1000µs):
- 95.1A
- Power - Peak Pulse:
- 6600W (6.6kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-218AB
SM8S43A-71HE4_A/J FAQ
1.How can I place an order for SM8S43A-71HE4_A/J through Aetrix?
Please submit a Request for Quotation (RFQ) for SM8S43A-71HE4_A/J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SM8S43A-71HE4_A/J reliable?
The price and inventory of SM8S43A-71HE4_A/J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SM8S43A-71HE4_A/J is usually 5 days.
3.What payment methods are accepted for SM8S43A-71HE4_A/J?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SM8S43A-71HE4_A/J transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SM8S43A-71HE4_A/J?
SM8S43A-71HE4_A/J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SM8S43A-71HE4_A/J order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SM8S43A-71HE4_A/J?
For technical support, including SM8S43A-71HE4_A/J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SM8S43A-71HE4_A/J requirements.
6.How does Aetrix verify that SM8S43A-71HE4_A/J is sourced from the original manufacturer or authorized distributors?
All SM8S43A-71HE4_A/J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SM8S43A-71HE4_A/J meets industry standards.
7.What is the process for return or replacement of SM8S43A-71HE4_A/J?
All SM8S43A-71HE4_A/J units undergo pre-shipment inspection (PSI). If there is an issue with SM8S43A-71HE4_A/J, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SM8S43A-71HE4_A/J part is unused and in its original packaging.
Return procedure for SM8S43A-71HE4_A/J:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SM8S43A-71HE4_A/J Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
