Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMA5J13CHE3/5A

Part No.:
SMA5J13CHE3/5A
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixSMA5J13CHE3/5A.pdf
Description:
TVS DIODE 13VWM 23.8VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,871

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMA5J13CHE3/5A from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AC (SMA) package, designed for high-energy surge protection on power and signal lines. It features a 13 V standoff voltage (VWM), 14.4–15.9 V breakdown range (VBR), 500 W peak pulse power (10/1000 µs), clamping voltage of 21.5 V at 23.3 A, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the SMA5J13CHE3/5A datasheet, SMA5J13CHE3/5A pinout, SMA5J13CHE3/5A application, or SMA5J13CHE3/5A equivalent, this device is selected for robust overvoltage protection in DC power rails, automotive sensor interfaces, and industrial control inputs where low clamping ratio, fast response (<1 ns), and 150 °C junction operation are critical.

Technical Context

The SMA5J13CHE3/5A operates as a silicon avalanche diode with glass-passivated junction, delivering bidirectional-capable surge suppression in unidirectional configuration. Its 500 W peak pulse power rating is defined under standardized 10/1000 µs waveform conditions, with thermal resistance RθJA = 80 °C/W and RθJL = 25 °C/W enabling effective heat dissipation on standard PCB pads.

It exhibits 1.0 µA maximum reverse leakage at 13 V, 21.5 V clamping voltage at 23.3 A peak pulse current, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. The HE3 suffix confirms AEC-Q101 qualification and JESD 201 Class 2 whisker resistance.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 13 V - Maximum continuous reverse operating voltage before clamping begins
VBR (min/max) 14.4 V / 15.9 V - Breakdown occurs within this range at 1 mA test current, ensuring predictable turn-on
VC @ IPPM 21.5 V - Clamped voltage during 500 W surge, limiting downstream stress to safe levels
IPPM 23.3 A - Peak surge current supported under 10/1000 µs waveform without failure
PPPM 500 W - Sustained transient energy absorption capability for automotive load-dump and ESD events
TJ max 150 °C - Enables reliable operation in under-hood automotive environments and industrial enclosures
Leakage @ VWM 1.0 µA - Minimal standby power loss and negligible impact on high-impedance sensing circuits

Pinout & Package

DO-214AC (SMA) surface-mount package with cathode band marking on one end; matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal (cathode-banded end is cathode) Connected to lower-potential side of protected line; defines unidirectional polarity
Cathode Avalanche clamping terminal (marked with band) Connected to higher-potential side (e.g., VIN or signal line); conducts during overvoltage

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces
Glass-passivated junction Enhances long-term stability and moisture resistance versus epoxy-passivated alternatives
Low incremental surge resistance Minimizes voltage overshoot during fast transients, improving protection margin for downstream ICs
MSL Level 1 (260 °C peak) Compatible with standard lead-free reflow processes without preconditioning or special handling
RoHS-compliant HE3 suffix Meets JESD 201 Class 2 whisker resistance and UL 94 V-0 flammability for safety-critical designs

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs against ISO 7637-2 pulse 1 (inductive switch-off) and pulse 5a (load dump).

IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBAT and GND to clamp surges before they reach LDOs or microcontrollers.

Use Value: 21.5 V clamping ensures downstream 16 V-rated components remain within absolute maximum ratings during 100 V/50 ms load dump events.

Use Scenario: Safeguarding analog input pins of PLC analog I/O modules exposed to field wiring transients.

IC Role / Device Role / Timing Role: TVS mounted at connector entry point to shunt induced surges from motor drives or solenoid switching.

Use Value: 1.0 µA leakage preserves measurement accuracy on 24-bit ADC front-ends; 500 W rating handles repetitive 1 kV/500 A surge tests.

Consumer Device DC Input Protection Telecom Power Supply Clamp

Use Scenario: Securing 12–24 V DC input of smart home gateways against accidental AC mains coupling or lightning-induced surges.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on bulk input rail upstream of buck converter and system PMIC.

Use Value: Fast <1 ns response prevents latch-up in integrated controllers; DO-214AC footprint enables automated placement in high-volume manufacturing.

Use Scenario: Clamping secondary-side outputs of telecom AC/DC adapters subject to EN 61000-4-5 surge immunity testing.

IC Role / Device Role / Timing Role: Secondary-side TVS across +VOUT/GND to suppress common-mode surges coupled via transformer parasitics.

Use Value: 150 °C TJ max supports operation in sealed telecom enclosures; 80 °C/W RθJA allows thermal design with minimal copper area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
Littelfuse SMAJ13AHE3/A Same VWM (13 V), identical DO-214AC package, but rated for 400 W PPPM and 19.9 V VC at 20 A Lower clamping voltage but reduced surge capacity; suitable where peak current rarely exceeds 20 A Select when tighter clamping is prioritized over single-event 500 W capability
ON Semiconductor 1.5SMC13AH Same VWM/VBR, DO-214AB (SMB) package (larger footprint), 500 W rating, 21.5 V VC at 23.3 A Requires PCB layout change due to SMB pad dimensions; higher thermal mass improves sustained surge handling Choose when board space permits larger package and enhanced thermal cycling endurance is needed

Compared with SMA5J13CHE3/5A, the Littelfuse SMAJ13AHE3/A offers lower clamping but less surge headroom, while the ON Semi 1.5SMC13AH delivers identical electrical performance in a physically larger package-making SMA5J13CHE3/5A optimal for space-constrained AEC-Q101 designs requiring full 500 W compliance.

Availability

SMA5J13CHE3/5A is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and consumer DC power input stages requiring stable component supply, AEC-Q101 traceability, and RoHS-compliant sourcing.

Supply support for SMA5J13CHE3/5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and TVS devices with emphasis on reliability, power density, and automotive qualification.

The SMA5J series is engineered for high-power-density transient suppression in harsh environments, targeting automotive, industrial, and telecom systems where compact size, AEC-Q101 validation, and repeatable clamping performance are mandatory.

FAQ

What is the clamping voltage of the SMA5J13CHE3/5A under maximum surge conditions?

The SMA5J13CHE3/5A clamps to 21.5 V when subjected to its rated peak pulse current of 23.3 A (10/1000 µs waveform). This value is measured per ANSI/IEEE C62.35 and guarantees that downstream circuitry sees no more than 21.5 V during a full 500 W transient event, making SMA5J13CHE3/5A suitable for protecting 24 V-rated components in automotive and industrial settings.

Is the SMA5J13CHE3/5A suitable for automotive applications?

Yes, the SMA5J13CHE3/5A carries the HE3 suffix, confirming full AEC-Q101 qualification, MSL Level 1 reflow compatibility, and JESD 201 Class 2 whisker resistance. Its 150 °C maximum junction temperature, 500 W surge rating, and validated performance across temperature extremes make SMA5J13CHE3/5A appropriate for under-hood ECUs, body control modules, and ADAS sensor power rails.

How does the HE3 suffix differ from the E3 suffix in SMA5J13CHE3/5A?

The HE3 suffix indicates AEC-Q101 qualification, JESD 201 Class 2 whisker resistance, and automotive-grade screening-whereas E3 denotes commercial-grade RoHS compliance only. SMA5J13CHE3/5A is therefore tested to stricter reliability standards, including extended temperature cycling and high-acceleration life testing, distinguishing it from non-HE3 variants like SMA5J13AE3/5A.

What is the reverse leakage current of the SMA5J13CHE3/5A at its standoff voltage?

The SMA5J13CHE3/5A specifies a maximum reverse leakage current of 1.0 µA at its 13 V standoff voltage (VWM) and 25 °C ambient. This ultra-low leakage ensures minimal power loss in always-on automotive modules and preserves signal integrity in high-impedance sensor bias networks, directly supporting design goals for battery longevity and measurement fidelity.

Can the SMA5J13CHE3/5A be used in bi-directional configurations?

No-SMA5J13CHE3/5A is a unidirectional TVS diode, indicated by the "A" (not "CA") suffix. Bi-directional operation requires the CA variant (e.g., SMA5J13CA), which has symmetrical breakdown in both polarities. Using SMA5J13CHE3/5A in reverse-biased AC applications would result in forward conduction and potential failure; always verify polarity alignment in schematic and layout for SMA5J13CHE3/5A.

SMA5J13CHE3/5A Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
13V
Voltage - Breakdown (Min):
14.4V
Voltage - Clamping (Max) @ Ipp:
23.8V
Current - Peak Pulse (10/1000µs):
21A
Power - Peak Pulse:
500W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

SMA5J13CHE3/5A FAQ

1.How can I place an order for SMA5J13CHE3/5A through Aetrix?

Please submit a Request for Quotation (RFQ) for SMA5J13CHE3/5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMA5J13CHE3/5A reliable?

The price and inventory of SMA5J13CHE3/5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMA5J13CHE3/5A is usually 5 days.

3.What payment methods are accepted for SMA5J13CHE3/5A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMA5J13CHE3/5A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMA5J13CHE3/5A?

SMA5J13CHE3/5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMA5J13CHE3/5A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMA5J13CHE3/5A?

For technical support, including SMA5J13CHE3/5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMA5J13CHE3/5A requirements.

6.How does Aetrix verify that SMA5J13CHE3/5A is sourced from the original manufacturer or authorized distributors?

All SMA5J13CHE3/5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMA5J13CHE3/5A meets industry standards.

7.What is the process for return or replacement of SMA5J13CHE3/5A?

All SMA5J13CHE3/5A units undergo pre-shipment inspection (PSI). If there is an issue with SMA5J13CHE3/5A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMA5J13CHE3/5A part is unused and in its original packaging.

Return procedure for SMA5J13CHE3/5A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMA5J13CHE3/5A Tags

  • SMA5J13CHE3/5A
  • SMA5J13CHE3/5A PDF
  • SMA5J13CHE3/5A Datasheet
  • SMA5J13CHE3/5A Specifications
  • SMA5J13CHE3/5A Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMA5J13CHE3/5A
  • Buy SMA5J13CHE3/5A
  • SMA5J13CHE3/5A Price
  • SMA5J13CHE3/5A Distributor
  • SMA5J13CHE3/5A Supplier
  • SMA5J13CHE3/5A Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER