My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMA5J24AHE3_A/H
- Part No.:
- SMA5J24AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMA5J24AHE3_A/H.pdf
- Description:
- TVS DIODE 24VWM 38.9VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:9,567
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMA5J24AHE3_A/H from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for high-energy surge protection on power and signal lines. It features 24 V stand-off voltage (VWM), 26.7–29.5 V breakdown voltage (VBR), 38.9 V clamping voltage at 12.9 A peak pulse current, and 500 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive ECUs, industrial sensor interfaces, and DC power rails.
For engineers reviewing the SMA5J24AHE3_A/H datasheet, SMA5J24AHE3_A/H pinout, SMA5J24AHE3_A/H application, or SMA5J24AHE3_A/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a clamping device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold (VBR = 26.7–29.5 V), limiting transient-induced overvoltage to ≤38.9 V at 12.9 A. Its glass-passivated junction ensures stable leakage (<1.0 µA at 24 V) and fast response time (<1.0 ns).
Rated for 500 W peak pulse power under 10/1000 µs waveform and 40 A non-repetitive forward surge current (8.3 ms half-sine), it is thermally characterized by RθJA = 80 °C/W and RθJL = 25 °C/W - enabling reliable operation up to TJ = 150 °C in compact PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 24 V - maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working range. |
| VBR (min/max) | 26.7 V / 29.5 V - guaranteed avalanche onset range at 1 mA test current; ensures consistent turn-on across production lots. |
| VC @ IPPM | 38.9 V at 12.9 A - clamped voltage during 10/1000 µs surge; determines protected circuit's maximum stress level. |
| PPPM | 500 W - peak transient energy absorption capability; supports IEC 61000-4-5 Level 4 (4 kV) compliance with proper layout. |
| TJ max | +150 °C - maximum junction temperature; enables use in under-hood automotive and industrial environments. |
| Polarity | Unidirectional - cathode marked with band; blocks forward conduction above ~3.5 V, protects only against negative transients. |
| MSL Level | Level 1 (J-STD-020) - no floor life limitation; compatible with standard reflow profiles up to 260 °C peak. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads; meets UL 94 V-0 flammability rating and JESD 22-B102 solderability requirements. Cathode indicated by black band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or lower-potential rail; completes clamping loop during negative surges. |
| Cathode | Reverse-biased terminal / protected line connection | Connected to line being protected (e.g., 24 V supply); avalanche conduction occurs here during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD; suffix HE3 denotes qualification. |
| Glass passivated junction | Ensures stable VBR tolerance, low leakage (<1 µA), and long-term parameter stability under thermal/humidity stress. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., ISO 7637-2 pulse 1/2a), improving clamping precision. |
| MSL Level 1 | Enables direct placement into high-temperature reflow without dry-pack or baking; reduces manufacturing overhead. |
| 500 W peak pulse power | Supports robust protection against lightning-induced surges and inductive switching spikes in 24 V systems. |
Applications
| Automotive Body Control Module (BCM) | Industrial 24 V PLC Input Stage |
|---|---|
Use Scenario: Protection of microcontroller I/O and CAN transceiver power pins against load dump and alternator ripple in 12/24 V vehicle networks. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between 24 V rail and ground, absorbing >500 W transients within nanoseconds. Use Value: Prevents latch-up or permanent damage to downstream logic and communication ICs during ISO 16750-2 load dump events. |
Use Scenario: Safeguarding digital input optocouplers and signal conditioning circuits in programmable logic controllers exposed to field wiring surges. IC Role / Device Role / Timing Role: Primary surge suppression element on 24 V DC input terminals, coordinated with upstream fuses and filtering. Use Value: Maintains functional safety integrity per IEC 61000-4-4/5 by limiting transient voltage to <39 V, below input stage breakdown thresholds. |
| Telecom Remote Radio Unit (RRU) Power Supply | Medical Diagnostic Sensor Interface |
Use Scenario: Secondary overvoltage protection on -48 V DC telecom power feeds subject to induced lightning surges and hot-swap transients. IC Role / Device Role / Timing Role: Fast-clamping TVS on DC input after primary MOV stage, handling residual fast-edge energy. Use Value: Reduces risk of catastrophic failure in high-reliability base station hardware by limiting clamping voltage to 38.9 V at 12.9 A. |
Use Scenario: Protecting analog front-end amplifiers and ADC inputs in portable ultrasound or patient monitoring devices connected to external sensors. IC Role / Device Role / Timing Role: Low-capacitance (typ. <200 pF) unidirectional clamp on low-voltage signal lines (e.g., 3.3 V/5 V sensor outputs). Use Value: Preserves signal fidelity while meeting IEC 61000-4-2 Level 4 (8 kV contact) ESD immunity without adding RC filtering delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMA5J24AHM3_A/H | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free material compliance is mandated (e.g., EU medical or green procurement policies). | Direct material substitution when halogen-free content is required; same footprint, thermal, and electrical behavior. |
| SMCJ24AHE3_A/H | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; higher thermal mass (RθJA = 35 °C/W vs. 80 °C/W). | Better suited for higher average power dissipation or repeated surge events; requires larger PCB area (7.11 mm × 6.22 mm vs. 4.93 mm × 3.99 mm). | Choose when thermal derating or multi-pulse robustness is critical; not drop-in due to different pad layout and height. |
Compared with SMA5J24AHE3_A/H, SMA5J24AHM3_A/H offers identical protection performance with halogen-free construction, while SMCJ24AHE3_A/H delivers superior thermal handling at the cost of board space - enabling trade-offs between miniaturization, regulatory compliance, and thermal resilience.
Availability
SMA5J24AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronics, industrial control systems, and telecom infrastructure requiring stable component supply with AEC-Q101 qualification and RoHS compliance.
Supply support for SMA5J24AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMA5J series is engineered for high-power-density transient suppression in space-constrained, high-reliability applications - particularly targeting automotive, industrial, and communications systems demanding AEC-Q101 validation and robust 10/1000 µs surge handling.
FAQ
What is the clamping voltage of SMA5J24AHE3_A/H at its rated peak pulse current?
The SMA5J24AHE3_A/H has a maximum clamping voltage (VC) of 38.9 V at 12.9 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per JEDEC test conditions and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is SMA5J24AHE3_A/H qualified for automotive applications?
Yes, SMA5J24AHE3_A/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88875. It undergoes rigorous stress testing including temperature cycling, highly accelerated life testing (HALT), and ESD verification - making it suitable for under-hood and chassis-mounted automotive modules such as body control units and ADAS power supplies.
What does the "HE3" suffix mean in SMA5J24AHE3_A/H?
The "HE3" suffix in SMA5J24AHE3_A/H indicates RoHS-compliant construction with AEC-Q101 qualification. It distinguishes this variant from commercial-grade "E3" parts and halogen-free "HM3" versions. The "_A/H" denotes revision level and packaging format: "A" is the revision code, and "H" specifies 7" tape-and-reel delivery with 1800 units per reel.
How does SMA5J24AHE3_A/H differ from bidirectional TVS diodes like SMA5J24CA?
SMA5J24AHE3_A/H is unidirectional and conducts only in reverse bias above VBR, with a defined cathode band. In contrast, SMA5J24CA is bidirectional - symmetrical in both polarities, lacking polarity marking, and intended for AC line or differential signal protection. Their VBR and VC values differ: SMA5J24CA has higher VBR min/max (28.9–31.9 V) and VC (45.4 V), reflecting distinct test and application contexts.
What is the thermal resistance of SMA5J24AHE3_A/H, and how does it affect PCB layout?
SMA5J24AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 80 °C/W when mounted on 0.2" × 0.2" copper pads per terminal. This high RθJA necessitates careful thermal design: increasing copper area, using internal ground planes, or adding thermal vias significantly lowers effective RθJA - essential for maintaining TJ ≤ 150 °C during repetitive surge events or elevated ambient temperatures.
SMA5J24AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 24V
- Voltage - Breakdown (Min):
- 26.7V
- Voltage - Clamping (Max) @ Ipp:
- 38.9V
- Current - Peak Pulse (10/1000µs):
- 12.9A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMA5J24AHE3_A/H FAQ
1.How can I place an order for SMA5J24AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMA5J24AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMA5J24AHE3_A/H reliable?
The price and inventory of SMA5J24AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMA5J24AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMA5J24AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMA5J24AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMA5J24AHE3_A/H?
SMA5J24AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMA5J24AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMA5J24AHE3_A/H?
For technical support, including SMA5J24AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMA5J24AHE3_A/H requirements.
6.How does Aetrix verify that SMA5J24AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMA5J24AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMA5J24AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMA5J24AHE3_A/H?
All SMA5J24AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMA5J24AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMA5J24AHE3_A/H part is unused and in its original packaging.
Return procedure for SMA5J24AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMA5J24AHE3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
