Vishay General Semiconductor - Diodes Division SMA5J9.0CAHE3_A/H

Overview

SMA5J9.0CAHE3_A/H from Vishay General Semiconductor is a bidirectional transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for high-energy surge protection on signal and power lines. It features a 9.0 V stand-off voltage (V_WM), 15.4 V maximum clamping voltage (V_C) at 5.0 A peak pulse current, 500 W peak pulse power rating (10/1000 µs), and AEC-Q101 qualification for automotive use.

For engineers reviewing the SMA5J9.0CAHE3_A/H datasheet, SMA5J9.0CAHE3_A/H pinout, SMA5J9.0CAHE3_A/H application, or SMA5J9.0CAHE3_A/H equivalent, key selection criteria include bidirectional clamping behavior, low clamping ratio (V_C/V_WM = 1.71), RoHS-compliant and halogen-free construction, MSL Level 1 moisture sensitivity, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This device operates as a voltage-clamped shunt protector, responding to transients within picoseconds by avalanche breakdown across its symmetrical junction. Its bidirectional architecture enables suppression of both positive and negative polarity surges without polarity dependency, making it suitable for AC-coupled or floating signal paths.

Thermal performance is defined by R_θJA = 80 °C/W and R_θJL = 25 °C/W, with junction temperature rated from –55 °C to +150 °C. The glass-passivated chip junction ensures stable leakage (<1.0 µA at V_WM) and robust surge endurance under repetitive 10/1000 µs waveforms.

Key Specifications

Pinout & Package

Package: SMA (DO-214AC), molded plastic case with matte tin-plated leads; no polarity marking for bidirectional types; meets UL 94 V-0 flammability rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMA5J9.0CAHM3_A/H, the HE3 version trades halogen-free content for broader supply chain availability; versus SMA6J9.0CAHE3_A/H, it provides identical clamping performance in a smaller thermal footprint-ideal for compact automotive modules where 500 W surge immunity suffices.

Availability

SMA5J9.0CAHE3_A/H is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial CAN networks, consumer USB ports, and telecom DSL line protection requiring stable component supply across production lifecycles.

Supply support for SMA5J9.0CAHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and automotive-grade validation.

The SMA5J series targets high-power-density transient suppression in space-constrained automotive and industrial systems, delivering AEC-Q101-qualified TVS performance in the compact SMA package.

FAQ

What is the clamping voltage of SMA5J9.0CAHE3_A/H at its rated peak pulse current?

The SMA5J9.0CAHE3_A/H has a maximum clamping voltage (V_C) of 15.4 V when subjected to its specified peak pulse current of 5.0 A under the 10/1000 µs waveform condition. This value is measured per JEDEC standards and guarantees the protected circuit will not experience more than 15.4 V during such a transient event. The SMA5J9.0CAHE3_A/H maintains this clamping performance across its full operating temperature range of –55 °C to +150 °C.

Is SMA5J9.0CAHE3_A/H suitable for automotive applications?

Yes, SMA5J9.0CAHE3_A/H is AEC-Q101 qualified and explicitly designated for automotive use via the "HE3" suffix, indicating RoHS compliance and qualification to the AEC-Q101 stress test standard. It is commonly deployed in engine control units, body control modules, and ADAS sensor interfaces where protection against load dump, jump start, and ISO 7637-2 pulses is required. The SMA5J9.0CAHE3_A/H undergoes rigorous testing for temperature cycling, highly accelerated life testing, and ESD robustness.

How does the bidirectional configuration of SMA5J9.0CAHE3_A/H affect its circuit implementation?

The SMA5J9.0CAHE3_A/H is inherently bidirectional, meaning its two terminals are functionally identical and symmetric-no cathode band marking is present. This allows direct placement across any two nodes subject to bipolar transients (e.g., CAN_H/CAN_L, USB D+/D–, or AC signal lines) without concern for orientation. Unlike unidirectional TVS diodes, the SMA5J9.0CAHE3_A/H clamps both positive and negative excursions above ±9.0 V, simplifying layout and eliminating polarity-related assembly errors.

What is the maximum reverse leakage current for SMA5J9.0CAHE3_A/H at its stand-off voltage?

The SMA5J9.0CAHE3_A/H exhibits a maximum reverse leakage current (I_D) of 1.0 µA when biased at its 9.0 V stand-off voltage (V_WM) and tested at 25 °C. This low leakage ensures minimal power drain in battery-operated systems and prevents false triggering in high-impedance sensing circuits. Leakage remains well below 10 µA even at elevated temperatures up to +125 °C, as confirmed in Vishay's thermal derating curves.

Does SMA5J9.0CAHE3_A/H require special PCB layout considerations?

Yes-the SMA5J9.0CAHE3_A/H must be mounted on minimum recommended copper pads: 0.2" × 0.2" (5.0 mm × 5.0 mm) per terminal-to achieve its rated 500 W peak pulse power and thermal resistance (R_θJA = 80 °C/W). Short, wide traces to ground or return planes are essential to minimize inductance and preserve clamping speed. The SMA5J9.0CAHE3_A/H should be placed as close as possible to the protected connector or IC input, with no vias or narrow traces between the TVS and the node being protected.