Vishay General Semiconductor - Diodes Division SMA6J11A-E3/5A
- Part No.:
- SMA6J11A-E3/5A
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMA6J11A-E3/5A.pdf
- Description:
- TVS DIODE 11VWM 21.5VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:9,698
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMA6J11A-E3/5A from Vishay General Semiconductor is a unidirectional surface-mount TransZORB® transient voltage suppressor in SMA (DO-214AC) package, with 11 V stand-off voltage (VWM), 12.2–13.5 V breakdown voltage (VBR at IT = 1 mA), 17.2 V max clamping voltage (VC at IPP = 34.8 A, 10/1000 µs), 600 W peak pulse power (10/1000 µs), and 50 A peak forward surge current - used to protect MOSFETs and signal lines in industrial sensor units against inductive switching transients.
For engineers reviewing the SMA6J11A-E3/5A datasheet, SMA6J11A-E3/5A pinout, SMA6J11A-E3/5A application, or SMA6J11A-E3/5A equivalent, key selection criteria include clamping voltage margin vs. protected IC's absolute maximum rating, thermal resistance (RθJA = 120 °C/W), unidirectional polarity requirement, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This device operates as a silicon avalanche diode optimized for transient suppression in DC power rails and low-speed signal paths. Its unidirectional configuration provides reverse-biased clamping only, with forward conduction limited to 3.5 V at 25 A (300 µs pulse). The dynamic resistance (RD = 0.107 Ω) directly determines clamping voltage rise under surge current per VCL = RD × IPP + VBRmax.
Thermal performance is defined by RθJA = 120 °C/W (on standard PCB pads) and RθJL = 25 °C/W, enabling operation up to TJ = 150 °C. Derating above TA = 25 °C follows Fig. 2, and leakage current remains ≤1 µA at VWM = 11 V, ensuring minimal standby power loss in battery-powered sensor interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - maximum continuous reverse voltage before significant leakage; sets upper limit for protected circuit's operating rail. |
| VBR min/max | 12.2 V / 13.5 V at IT = 1 mA - defines guaranteed avalanche initiation range; used to calculate worst-case clamping. |
| VC @ IPP | 17.2 V at 34.8 A (10/1000 µs) - peak clamped voltage seen by downstream IC during standard surge event. |
| PPPM (10/1000 µs) | 600 W - energy-handling capacity for long-duration transients like inductive kickback. |
| IFSM | 50 A - surge current tolerance in forward direction; relevant for fault conditions or bidirectional system miswiring. |
| TJ max | +150 °C - maximum junction temperature; requires thermal design using RθJA = 120 °C/W on specified pad layout. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, unidirectional polarity indicated by cathode band. Matte tin-plated leads, RoHS-compliant (E3 suffix), MSL level 1, LF peak 260 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or low-impedance return in unidirectional TVS configuration; must handle 50 A IFSM surges. |
| Cathode | Clamping node / protected line connection | Connected to line being protected (e.g., sensor VDD); clamps to ≤17.2 V when transient exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile SMA package | Enables high-density PCB layouts and compatibility with standard SMT pick-and-place equipment. |
| MSL Level 1 rating | Allows unlimited floor life and reflow at 260 °C peak without baking, simplifying manufacturing flow. |
| Clamping ratio VC/VBR | 1.39 (17.2 V / 12.2 V) - tight ratio ensures predictable overvoltage limiting with minimal margin overhead. |
| Leakage current ≤1 µA at VWM | Minimizes quiescent power draw in always-on sensor nodes and extends battery life. |
Applications
| Industrial Sensor Protection | Automotive Body Control Module |
|---|---|
Use Scenario: Protecting 12 V supply rail of an industrial temperature sensor exposed to relay coil de-energization spikes. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VDD and GND, clamping transients before they reach the sensor's LDO and ADC. Use Value: Limits voltage excursion to ≤17.2 V, staying below the 20 V absolute maximum rating of typical industrial-grade analog front-end ICs. | Use Scenario: Safeguarding LIN bus signal line (12 V nominal) in door module against load dump and ESD events. IC Role / Device Role / Timing Role: TVS connected between LIN line and chassis ground, suppressing 8/20 µs ESD and 10/1000 µs load dump surges. Use Value: With 4000 W PPPM (8/20 µs), it absorbs automotive-level ESD pulses without degradation, preserving signal integrity. |
| Consumer Appliance Motor Drive | Telecom Power Interface |
Use Scenario: Shielding microcontroller I/O pins driving small DC motors in smart home appliances. IC Role / Device Role / Timing Role: Discrete TVS on motor driver output traces, shunting inductive flyback energy away from MCU GPIOs. Use Value: 50 A IFSM rating withstands repeated motor stall currents, while 17.2 V clamping prevents GPIO latch-up. | Use Scenario: Protecting 12 V DC input of PoE-powered telecom gateway against lightning-induced surges on outdoor wiring. IC Role / Device Role / Timing Role: Primary-stage TVS on DC input rail upstream of DC/DC converter, absorbing bulk surge energy. Use Value: 600 W (10/1000 µs) rating handles sustained inductive transients from nearby lightning strikes on building infrastructure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMA6J11CA-E3/5A | Bidirectional version; symmetric clamping for AC-coupled or floating lines; VBR = 12.2–13.5 V, VC = 19.9 V @ 30.1 A. | Required where line polarity reverses or differential signals need protection on both polarities. | Select SMA6J11CA-E3/5A only if bidirectional clamping is explicitly needed; SMA6J11A-E3/5A is optimal for DC rails with fixed polarity. |
| 1.5KE11A | Through-hole DO-201 package; same VWM/VBR/VC specs but higher RθJA (~65 °C/W), lower IFSM (40 A), and no MSL-1 rating. | Suitable for prototyping or legacy through-hole designs; not recommended for high-volume SMT production. | Choose SMA6J11A-E3/5A for automated assembly, thermal reliability on PCB, and industrial-grade process compliance. |
Compared with SMA6J11CA-E3/5A and 1.5KE11A, the SMA6J11A-E3/5A offers superior manufacturability (MSL-1, SMT-compatible), tighter clamping (17.2 V vs. 19.9 V), and better thermal performance on standard pads - making it the preferred choice for new industrial and automotive PCB designs requiring unidirectional DC rail protection.
Availability
SMA6J11A-E3/5A is available at Aetrix Electronics and suitable for industrial sensor units, automotive body control modules, and consumer appliance motor drives requiring stable component supply, RoHS-compliant packaging, and automated SMT placement support.
Supply support for SMA6J11A-E3/5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.
The SMA6JxxA series is designed specifically for robust, surface-mount transient suppression in harsh environments - targeting industrial automation, automotive subsystems, and telecom infrastructure where high-energy surge immunity and manufacturing scalability are critical.
FAQ
What is the maximum clamping voltage of the SMA6J11A-E3/5A under a 10/1000 µs surge?
The SMA6J11A-E3/5A has a maximum clamping voltage (VC) of 17.2 V when subjected to a 10/1000 µs waveform at its rated peak pulse current of 34.8 A. This value is measured per the test conditions specified in the Vishay datasheet (Document Number: 89460), with the device mounted on 5.0 mm × 5.0 mm copper pads. The SMA6J11A-E3/5A maintains this clamping performance across its operational temperature range.
Is the SMA6J11A-E3/5A suitable for protecting a 12 V automotive circuit?
Yes, the SMA6J11A-E3/5A is suitable for 12 V automotive circuits such as body control modules, provided the protected IC's absolute maximum voltage rating exceeds 17.2 V. Its 11 V stand-off voltage (VWM) aligns with nominal 12 V systems, and its 4000 W peak pulse power rating (8/20 µs) meets common automotive ESD and load-dump immunity requirements. The SMA6J11A-E3/5A is rated for TJ = 150 °C and qualified to MSL level 1, supporting under-hood thermal and manufacturing demands.
Does the SMA6J11A-E3/5A have bidirectional capability?
No, the SMA6J11A-E3/5A is strictly unidirectional. It clamps only in reverse bias (cathode positive relative to anode) and conducts forward current up to 50 A (IFSM). For bidirectional protection - such as on AC-coupled or floating signal lines - the SMA6J11CA-E3/5A variant must be used. The "A" suffix in SMA6J11A-E3/5A explicitly denotes unidirectional polarity, confirmed in the Vishay datasheet section "FEATURES" and "Polarity: color band denotes cathode end".
What is the thermal resistance of the SMA6J11A-E3/5A, and how does it affect PCB layout?
The SMA6J11A-E3/5A has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on the minimum recommended pad layout: 5.0 mm × 5.0 mm copper pads per terminal. This value assumes no additional heatsinking. To maintain TJ ≤ 150 °C at full 4 W steady-state dissipation (PD at TA = 50 °C), the PCB must provide adequate copper area and airflow. Reducing pad size or omitting thermal vias will increase RθJA and risk thermal runaway during repeated surge events. The SMA6J11A-E3/5A datasheet specifies this layout in "MECHANICAL DATA".
How does the leakage current of the SMA6J11A-E3/5A impact low-power sensor applications?
The SMA6J11A-E3/5A exhibits ≤1 µA reverse leakage current at its 11 V stand-off voltage (VWM), measured at TA = 25 °C. This ultra-low leakage ensures negligible impact on battery life in always-on industrial sensors - for example, adding less than 0.01 mAh per day to a 10 µA sleep-mode system. Leakage remains within specification up to 85 °C, per the "ELECTRICAL CHARACTERISTICS" table, making the SMA6J11A-E3/5A appropriate for extended outdoor deployments where ambient temperature varies widely.
SMA6J11A-E3/5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 172A (8/20µs)
- Power - Peak Pulse:
- 4000W (4kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMA6J11A-E3/5A FAQ
1.How can I place an order for SMA6J11A-E3/5A through Aetrix?
Please submit a Request for Quotation (RFQ) for SMA6J11A-E3/5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMA6J11A-E3/5A reliable?
The price and inventory of SMA6J11A-E3/5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMA6J11A-E3/5A is usually 5 days.
3.What payment methods are accepted for SMA6J11A-E3/5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMA6J11A-E3/5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMA6J11A-E3/5A?
SMA6J11A-E3/5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMA6J11A-E3/5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMA6J11A-E3/5A?
For technical support, including SMA6J11A-E3/5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMA6J11A-E3/5A requirements.
6.How does Aetrix verify that SMA6J11A-E3/5A is sourced from the original manufacturer or authorized distributors?
All SMA6J11A-E3/5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMA6J11A-E3/5A meets industry standards.
7.What is the process for return or replacement of SMA6J11A-E3/5A?
All SMA6J11A-E3/5A units undergo pre-shipment inspection (PSI). If there is an issue with SMA6J11A-E3/5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMA6J11A-E3/5A part is unused and in its original packaging.
Return procedure for SMA6J11A-E3/5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMA6J11A-E3/5A Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

