Vishay General Semiconductor - Diodes Division SMAJ100CAHE3_A/H
- Part No.:
- SMAJ100CAHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ100CAHE3_A/H.pdf
- Description:
- TVS DIODE 100VWM 162VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:8,306
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ100CAHE3_A/H from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on signal or power lines. It features 100 V standoff voltage (VWM), 111–123 V breakdown voltage (VBR) at 1 mA, 162 V maximum clamping voltage (VC) at 1.9 A peak pulse current (IPPM), and 400 W peak pulse power (10/1000 μs waveform). It protects MOSFETs, ICs, and sensor signal lines in automotive and industrial power supply interfaces.
For engineers reviewing the SMAJ100CAHE3_A/H datasheet, SMAJ100CAHE3_A/H pinout, SMAJ100CAHE3_A/H application, or SMAJ100CAHE3_A/H equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates symmetrically in both directions due to its bidirectional construction, enabling protection of AC-coupled or floating signal paths without polarity concerns. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ns) to ESD and lightning-induced surges.
The device delivers 400 W peak pulse power up to 78 V and derates to 300 W above that threshold, with thermal resistance of 120 °C/W (junction-to-ambient) and 30 °C/W (junction-to-lead), supporting reliable operation under repetitive transient stress when mounted per recommended pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 100 V - Maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 111 V / 123 V at 1 mA - Confirmed breakdown range ensuring predictable turn-on under surge |
| VC @ IPPM | 162 V at 1.9 A - Clamped voltage during 10/1000 μs transient, limiting downstream stress |
| PPPM | 400 W (≤78 V), 300 W (>78 V) - Peak surge energy handling per standard waveform |
| ID @ VWM | 1.0 μA - Low leakage preserves signal integrity and system quiescent current |
| TJ max | +150 °C - Enables use in under-hood automotive and high-temperature industrial environments |
| Package | SMA (DO-214AC) - Standardized SMT footprint compatible with JEDEC MS-013, MSL Level 1 |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, bidirectional configuration with no polarity marking; terminals are matte tin-plated, solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry (reverse bias) | One terminal of symmetrical PN junction; conducts during positive or negative overvoltage |
| Cathode | Transient current entry (forward bias) | Second terminal of symmetrical PN junction; identical electrical role to Anode in bidirectional mode |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces |
| 400 W peak pulse power (10/1000 μs) | Withstands IEC 61000-4-5 Level 4 surge events when properly mounted |
| Low clamping ratio (VC/VBR ≈ 1.46) | Minimizes voltage overshoot across protected circuitry during fast transients |
| MSL Level 1, 260 °C reflow compatible | Supports single-pass lead-free reflow without popcorn or delamination risk |
| Glass passivated junction | Ensures long-term stability of VBR and low leakage across temperature and life cycle |
Applications
| Automotive Power Line Protection | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Bidirectional clamping element placed between power rail and ground, absorbing >100 V spikes within nanoseconds. Use Value: Prevents latch-up or gate oxide damage in MCU power domains while maintaining <1.0 μA leakage at nominal 12 V. |
Use Scenario: Shielding analog output lines of pressure or temperature sensors from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance (≈100 pF at 0 V) shunt protector on differential or single-ended signal traces. Use Value: Limits transient voltage to ≤162 V without distorting mV-level sensor signals due to minimal leakage and stable VBR. |
| Telecom Interface Surge Protection | Consumer Device USB/UART Line Guard |
Use Scenario: Safeguarding RS-485 transceivers in base station backhaul links exposed to induced lightning surges. IC Role / Device Role / Timing Role: Primary line-to-ground TVS on balanced differential pairs, rated for repetitive 300 W surges above 78 V. Use Value: Maintains signal integrity through low incremental surge resistance and symmetrical clamping behavior across both polarities. |
Use Scenario: Adding robustness to USB 2.0 D+/D− or UART TX/RX lines in smart home hubs against user-handling ESD. IC Role / Device Role / Timing Role: Board-level ESD suppressor compliant with IEC 61000-4-2 ±15 kV contact discharge. Use Value: Achieves sub-100 ns response and <1.0 μA leakage at 5 V, preventing false resets or data corruption during plug/unplug events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ100CA-M3 | Halogen-free, RoHS-compliant, same electrical specs and AEC-Q101 qualification | No difference in protection performance; preferred where halogen-free compliance is mandated | Select SMAJ100CA-M3 for green manufacturing programs requiring halogen-free materials |
| SMBJ100CAHE3_A/H | Same VWM/VBR/VC ratings but in SMB (DO-214AA) package - 25 % larger footprint, 50 % higher thermal mass | Better power dissipation margin in high-duty-cycle surge environments; less suitable for ultra-dense layouts | Choose SMBJ100CAHE3_A/H only if PCB layout allows larger pad area and thermal relief is critical |
Compared with SMAJ100CAHE3_A/H, SMAJ100CA-M3 offers identical protection performance with halogen-free construction, while SMBJ100CAHE3_A/H trades compactness for improved thermal handling - making the original SMAJ100CAHE3_A/H optimal for space-constrained AEC-Q101 automotive modules.
Availability
SMAJ100CAHE3_A/H is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface design, and telecom infrastructure projects requiring stable component supply with full traceability and lifecycle management.
Supply support for SMAJ100CAHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and automotive-grade validation.
The SMAJ series targets board-level transient suppression in harsh environments, engineered specifically for AEC-Q101 compliance, high surge robustness, and seamless integration into automated SMT lines.
FAQ
What is the clamping voltage of SMAJ100CAHE3_A/H at its rated peak pulse current?
The SMAJ100CAHE3_A/H has a maximum clamping voltage (VC) of 162 V at its specified peak pulse current (IPPM) of 1.9 A under the 10/1000 μs waveform condition. This value is measured per Figure 1 in Vishay document 88390 and defines the upper voltage limit imposed on protected circuitry during surge events. The clamping performance remains consistent across temperature and lifetime when operated within its derating curve.
Is SMAJ100CAHE3_A/H suitable for automotive applications?
Yes, SMAJ100CAHE3_A/H is AEC-Q101 qualified and explicitly designated for automotive use with ordering code suffix HE3. It meets requirements for under-hood and cabin electronics, including engine control units, body controllers, and ADAS sensor interfaces. Its 150 °C maximum junction temperature, MSL Level 1 rating, and validated surge performance make it appropriate for production automotive systems.
How does the bidirectional configuration of SMAJ100CAHE3_A/H affect its circuit implementation?
The bidirectional configuration of SMAJ100CAHE3_A/H eliminates polarity sensitivity, allowing direct placement across any two nodes subject to differential transients - such as AC signal lines, differential bus pairs (e.g., RS-485), or floating power rails. Unlike unidirectional TVS diodes, SMAJ100CAHE3_A/H requires no cathode marking and clamps equally for positive and negative excursions beyond ±100 V, simplifying layout and reducing BOM variants.
What is the thermal resistance of SMAJ100CAHE3_A/H, and how does it impact PCB layout?
SMAJ100CAHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W and junction-to-lead (RθJL) of 30 °C/W when mounted on 0.2" × 0.2" copper pads per Vishay's recommended layout. To maintain safe junction temperatures during repetitive surges, designers must adhere to this pad size and avoid excessive trace length or isolation - undersized pads increase RθJA and risk thermal runaway during sustained transient activity.
Does SMAJ100CAHE3_A/H meet industry standards for surge immunity testing?
SMAJ100CAHE3_A/H supports compliance with IEC 61000-4-5 (surge immunity) Level 4 when applied per Vishay's mounting guidelines and derating curves. Its 400 W peak pulse power (≤78 V) and 300 W (>78 V) rating align with the 2 Ω source impedance test configuration. It also satisfies IEC 61000-4-2 ESD requirements up to ±15 kV contact discharge due to sub-nanosecond response and low leakage.
SMAJ100CAHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 111V
- Voltage - Clamping (Max) @ Ipp:
- 162V
- Current - Peak Pulse (10/1000µs):
- 1.9A
- Power - Peak Pulse:
- 300W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ100CAHE3_A/H FAQ
1.How can I place an order for SMAJ100CAHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ100CAHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ100CAHE3_A/H reliable?
The price and inventory of SMAJ100CAHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ100CAHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMAJ100CAHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ100CAHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ100CAHE3_A/H?
SMAJ100CAHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ100CAHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ100CAHE3_A/H?
For technical support, including SMAJ100CAHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ100CAHE3_A/H requirements.
6.How does Aetrix verify that SMAJ100CAHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMAJ100CAHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ100CAHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMAJ100CAHE3_A/H?
All SMAJ100CAHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ100CAHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ100CAHE3_A/H part is unused and in its original packaging.
Return procedure for SMAJ100CAHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ100CAHE3_A/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

