My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMAJ10AHE3/61
- Part No.:
- SMAJ10AHE3/61
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ10AHE3/61.pdf
- Description:
- TVS DIODE 10VWM 17VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:4,696
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ10AHE3/61 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for robust overvoltage protection of sensitive electronics. It features a 10 V stand-off voltage (VWM), 11.1–12.3 V breakdown voltage (VBR) at 1 mA, 17.0 V maximum clamping voltage (VC) at 23.5 A peak pulse current (IPPM), and 400 W peak pulse power (10/1000 μs waveform), commonly deployed on power rails and I/O lines of automotive ECUs and industrial sensor interfaces.
For engineers reviewing the SMAJ10AHE3/61 datasheet, SMAJ10AHE3/61 pinout, SMAJ10AHE3/61 application, or SMAJ10AHE3/61 equivalent, key selection criteria include clamping performance under 23.5 A surge, unidirectional polarity with cathode band marking, AEC-Q101 qualification status, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
The SMAJ10AHE3/61 operates as a silicon avalanche diode that enters controlled breakdown when reverse voltage exceeds its VBR range (11.1–12.3 V), limiting transient energy to safe levels via low dynamic impedance. Its 17.0 V clamping voltage at 23.5 A ensures downstream ICs (e.g., microcontrollers, CAN transceivers) remain below absolute maximum ratings during ESD or load-dump events.
Thermally, it exhibits RθJA = 120 °C/W and RθJL = 30 °C/W, enabling reliable operation up to TJ = +150 °C. The device is rated for 40 A non-repetitive forward surge (8.3 ms half-sine) and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC bias margin. |
| VBR min/max | 11.1 V / 12.3 V at 1 mA - Confirmed breakdown threshold range; ensures predictable turn-on during transients. |
| VC @ IPPM | 17.0 V at 23.5 A - Clamped voltage under standardized 10/1000 μs surge; directly limits stress on protected circuitry. |
| PPPM | 400 W (10/1000 μs) - Peak transient energy absorption capability; supports common ISO 7637-2 Pulse 1/2/5a test profiles. |
| ID @ VWM | 1.0 μA - Reverse leakage at stand-off voltage; negligible power loss in standby, critical for battery-powered systems. |
| TJ max | +150 °C - Maximum junction temperature; enables use in under-hood automotive environments. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC standard. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode identified by black band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or low-impedance return plane; completes clamping loop during overvoltage events. |
| Cathode | Reverse-biased terminal / protected line connection | Connected to the line being protected (e.g., 12 V rail); blocks normal operation but conducts during transients. |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 μs) | Withstands high-energy transients such as ISO 7637-2 Pulse 5a (load dump) without degradation. |
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensor modules. |
| MSL Level 1, 260 °C peak reflow | Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., ESD > 15 kV contact discharge). |
| Glass passivated junction | Enhances long-term stability and reliability under thermal cycling and humidity exposure. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V supply lines in engine control units (ECUs) against load-dump transients up to 35 V. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VCC and GND to clamp surges before they reach MCU power pins. Use Value: Limits clamped voltage to 17.0 V at 23.5 A, ensuring downstream 3.3 V/5 V regulators and microcontrollers remain within safe operating area. | Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) of pressure sensors in factory automation systems. IC Role / Device Role / Timing Role: TVS connected across signal and ground to absorb inductive switching spikes from solenoid drivers. Use Value: Sub-20 ns response time and 1.0 μA leakage preserve signal integrity and minimize offset error in precision measurement circuits. |
| Consumer Device USB Port Protection | Telecom Equipment DC Input Protection |
Use Scenario: Shielding USB VBUS lines in portable medical monitors from ESD and hot-plug transients. IC Role / Device Role / Timing Role: Unidirectional TVS mounted at connector entry point to shunt ESD energy to chassis ground. Use Value: 17.0 V clamping prevents damage to USB PHY ICs rated for ≤ 20 V absolute maximum, while 1.0 μA leakage avoids battery drain. | Use Scenario: Guarding -48 V DC input stages of telecom base station power supplies against lightning-induced surges. IC Role / Device Role / Timing Role: TVS configured in series with input filter to limit surge voltage entering primary-side regulation circuitry. Use Value: 400 W pulse rating and 150 °C max junction temperature support sustained operation in high-ambient telecom cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ10A-E3/61 | Same electrical specs and SMA package; RoHS-compliant commercial grade, not AEC-Q101 qualified. | Lacks automotive qualification; suitable for industrial/commercial designs where AEC validation is not required. | Select SMAJ10AHE3/61 when automotive reliability certification is mandatory; choose SMAJ10A-E3/61 for cost-sensitive non-automotive use. |
| SMBJ10AHE3/61 | Higher 600 W PPPM rating; larger SMB (DO-214AA) package with higher thermal mass and RθJA = 90 °C/W. | Better suited for higher-energy transients; requires larger PCB footprint and different pad layout. | Choose SMBJ10AHE3/61 only if system-level testing confirms need for >400 W surge handling; SMAJ10AHE3/61 remains optimal for space-constrained AEC-Q101 designs. |
Compared with SMAJ10A-E3/61, the SMAJ10AHE3/61 adds AEC-Q101 qualification without sacrificing electrical performance; versus SMBJ10AHE3/61, it trades 200 W lower pulse power for 30% smaller footprint and identical automotive compliance-making it ideal for compact ECU modules where board space and qualification are both critical.
Availability
SMAJ10AHE3/61 is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and consumer portable medical devices requiring stable component supply with full traceability and lifecycle management.
Supply support for SMAJ10AHE3/61 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMAJ series is engineered for high-reliability transient suppression in harsh environments-specifically targeting automotive, industrial, and telecom applications where robustness against ESD, load dump, and inductive switching is mission-critical.
FAQ
What is the clamping voltage of SMAJ10AHE3/61 at its rated peak pulse current?
The SMAJ10AHE3/61 has a maximum clamping voltage (VC) of 17.0 V at its rated peak pulse current (IPPM) of 23.5 A under the standard 10/1000 μs waveform. This value is measured per JEDEC test conditions and ensures protected circuitry remains below critical voltage thresholds during surge events. The SMAJ10AHE3/61 achieves this with low dynamic impedance, making it effective for safeguarding 12 V automotive and industrial systems.
Is SMAJ10AHE3/61 suitable for automotive applications?
Yes, SMAJ10AHE3/61 is AEC-Q101 qualified, meaning it has passed rigorous stress tests-including temperature cycling, high-temperature reverse bias, and ESD-required for automotive electronics. Its 150 °C maximum junction temperature, MSL Level 1 rating, and glass-passivated junction make it appropriate for under-hood and body-control module deployments. The SMAJ10AHE3/61 is explicitly designated for automotive use in Vishay's ordering nomenclature (HE3 suffix).
How does the SMAJ10AHE3/61 differ from the SMAJ10A-E3/61?
The SMAJ10AHE3/61 and SMAJ10A-E3/61 share identical electrical specifications (VWM = 10 V, VC = 17.0 V, PPPM = 400 W) and SMA package, but differ in qualification: SMAJ10AHE3/61 is AEC-Q101 qualified, while SMAJ10A-E3/61 is commercial-grade RoHS-compliant only. Both use matte tin plating and meet JESD 201 class 2 whisker resistance. The SMAJ10AHE3/61 is intended for automotive designs requiring certified reliability; SMAJ10A-E3/61 serves cost-sensitive industrial or consumer applications.
What is the reverse leakage current of SMAJ10AHE3/61 at its stand-off voltage?
The SMAJ10AHE3/61 exhibits a maximum reverse leakage current (ID) of 1.0 μA at its stand-off voltage (VWM) of 10 V, measured at TA = 25 °C. This ultra-low leakage minimizes quiescent power loss-critical in battery-powered or energy-efficient systems-and ensures minimal impact on reference voltages or high-impedance sensor inputs. The SMAJ10AHE3/61 maintains this specification across its full operating temperature range.
What PCB pad layout is recommended for optimal thermal performance of SMAJ10AHE3/61?
Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad area per terminal for the SMAJ10AHE3/61 to achieve its rated 400 W peak pulse power and thermal resistance (RθJA = 120 °C/W). Use solid internal ground planes and thermal vias beneath pads where possible. The SMAJ10AHE3/61's DO-214AC outline requires precise stencil design to avoid solder bridging while ensuring full wetting of matte tin leads per J-STD-002.
SMAJ10AHE3/61 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.1V
- Voltage - Clamping (Max) @ Ipp:
- 17V
- Current - Peak Pulse (10/1000µs):
- 23.5A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ10AHE3/61 FAQ
1.How can I place an order for SMAJ10AHE3/61 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ10AHE3/61 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ10AHE3/61 reliable?
The price and inventory of SMAJ10AHE3/61 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ10AHE3/61 is usually 5 days.
3.What payment methods are accepted for SMAJ10AHE3/61?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ10AHE3/61 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ10AHE3/61?
SMAJ10AHE3/61 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ10AHE3/61 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ10AHE3/61?
For technical support, including SMAJ10AHE3/61 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ10AHE3/61 requirements.
6.How does Aetrix verify that SMAJ10AHE3/61 is sourced from the original manufacturer or authorized distributors?
All SMAJ10AHE3/61 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ10AHE3/61 meets industry standards.
7.What is the process for return or replacement of SMAJ10AHE3/61?
All SMAJ10AHE3/61 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ10AHE3/61, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ10AHE3/61 part is unused and in its original packaging.
Return procedure for SMAJ10AHE3/61:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ10AHE3/61 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
