Vishay General Semiconductor - Diodes Division SMAJ10AHE3_A/H
- Part No.:
- SMAJ10AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ10AHE3_A/H.pdf
- Description:
- TVS DIODE 10VWM 17VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:9,357
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ10AHE3_A/H from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode designed for robust overvoltage protection of sensitive electronics. It features a 10 V standoff voltage (VWM), 11.1–12.3 V breakdown voltage (VBR) at 1 mA, 17.0 V maximum clamping voltage (VC) at 23.5 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - deployed on power rails and signal lines in automotive ECUs and industrial sensor interfaces.
For engineers reviewing the SMAJ10AHE3_A/H datasheet, SMAJ10AHE3_A/H pinout, SMAJ10AHE3_A/H application, or SMAJ10AHE3_A/H equivalent, key selection criteria include unidirectional polarity, SMA (DO-214AC) package compatibility, AEC-Q101 qualification status, and clamping performance under 23.5 A surge conditions - critical for IEC 61000-4-2/4-4 compliant designs.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR (11.1–12.3 V), it avalanches to limit transient energy across protected circuit nodes. Its low incremental surge resistance ensures minimal voltage overshoot during fast transients (e.g., ISO 7637-2 pulse 1/2a/5a), while glass-passivated junction enables stable long-term reliability.
The device is rated for -55 °C to +150 °C operating junction temperature, with thermal resistance RθJA = 120 °C/W and RθJL = 30 °C/W. It meets MSL Level 1 per J-STD-020, supports lead-free reflow up to 260 °C peak, and is qualified to AEC-Q101 - confirming suitability for automotive under-hood and infotainment systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10 V - maximum continuous reverse operating voltage before leakage exceeds 1 µA; defines safe DC bias margin. |
| VBR (min/max) | 11.1 V / 12.3 V at IT = 1 mA - guaranteed avalanche initiation range; determines earliest clamping onset. |
| VC @ IPPM | 17.0 V at 23.5 A - clamped voltage during 10/1000 µs surge; sets upper bound on protected node stress. |
| PPPM | 400 W - peak pulse power handling with 10/1000 µs waveform; validates immunity to common ESD/EFT surges. |
| ID @ VWM | 1.0 µA - reverse leakage at 10 V; ensures negligible standby current in battery-powered systems. |
| TJ max. | +150 °C - maximum junction temperature; enables operation in high-ambient automotive environments. |
| Package | SMA (DO-214AC) - surface-mount outline with 5.28 mm × 4.50 mm footprint; compatible with standard SMT pick-and-place. |
Pinout & Package
Package: SMA (DO-214AC), molded plastic case with matte tin-plated leads, UL 94 V-0 rated. Cathode indicated by band marking on unidirectional variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path); conducts during forward surge events. |
| Cathode | Reverse-biased clamping terminal | Connected to protected line (e.g., 12 V rail or CAN_H); avalanches into conduction when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, ADAS sensors, and body electronics per stress test requirements. |
| 400 W peak pulse power | Withstands ISO 7637-2 pulse 5a (50 V, 100 ms) and IEC 61000-4-5 combination wave (0.5/100 µs) without degradation. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage exposure during transients - critical for protecting 3.3 V/5 V logic inputs downstream. |
| MSL Level 1 moisture sensitivity | Enables direct placement without baking; supports standard reflow profiles up to 260 °C peak temperature. |
| Glass passivated junction | Ensures stable VBR over time and temperature; eliminates risk of parameter drift in humid or thermally cycled environments. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 12 V supply inputs in engine control units against load dump and alternator ripple. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed between power rail and chassis ground. Use Value: Clamps surges up to 17.0 V at 23.5 A, preventing damage to downstream LDOs and microcontrollers. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loop) in factory automation transmitters. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional TVS used across signal and return paths. Use Value: Limits induced transients from motor drives or relay switching to <17.0 V, preserving ADC input integrity. |
| Consumer USB Port ESD Protection | Telecom Ethernet PHY Interface Protection |
|
Use Scenario: Adding secondary-level surge defense on VBUS line of USB-C ports in portable docking stations. IC Role / Device Role / Timing Role: Standoff-rated clamping device upstream of USB power switch ICs. Use Value: Withstands ±15 kV contact ESD (IEC 61000-4-2) while maintaining <1 µA leakage at 10 V nominal bus voltage. |
Use Scenario: Front-end protection for 10/100BASE-TX Ethernet PHYs exposed to lightning-induced surges on RJ45 lines. IC Role / Device Role / Timing Role: Unidirectional TVS applied across differential pair (e.g., TX+ to GND). Use Value: Delivers 400 W pulse handling and 17.0 V clamping to prevent PHY latch-up during 10/1000 µs surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ10A-E3/61 | Same electrical specs and SMA package; RoHS-compliant commercial grade (non-AEC-Q101). | Lacks automotive qualification; not approved for under-hood or safety-critical modules. | Select when cost-sensitive industrial or consumer use cases do not require AEC-Q101 validation. |
| SMLJ10AHE3_A/H | Higher 1500 W peak pulse power rating; same VWM/VBR/VC but larger SMC (DO-214AB) package. | Requires PCB layout change due to 7.11 mm × 6.22 mm footprint vs. SMA's 5.28 mm × 4.50 mm. | Choose when system-level surge requirements exceed 400 W - e.g., heavy-duty vehicle alternator protection. |
Compared with SMAJ10A-E3/61, SMAJ10AHE3_A/H adds AEC-Q101 qualification for automotive deployment; compared with SMLJ10AHE3_A/H, it trades higher power handling for smaller footprint and lower thermal mass - enabling compact placement near IC pins.
Availability
SMAJ10AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and consumer USB power protection requiring stable component supply and traceable sourcing.
Supply support for SMAJ10AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and automotive-grade validation.
SMAJ10AHE3_A/H belongs to the TRANSZORB® family of surface-mount TVS diodes, engineered specifically for fast-response, high-energy transient suppression in harsh environments including automotive and industrial settings.
FAQ
What is the clamping voltage of SMAJ10AHE3_A/H at its rated peak pulse current?
The SMAJ10AHE3_A/H has a maximum clamping voltage (VC) of 17.0 V at its rated peak pulse current (IPPM) of 23.5 A with a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuits during surge events. The SMAJ10AHE3_A/H maintains this clamping performance across its qualified temperature range and after repeated surge exposures.
Is SMAJ10AHE3_A/H suitable for automotive applications?
Yes, SMAJ10AHE3_A/H is AEC-Q101 qualified, confirming compliance with stress tests for temperature cycling, humidity, mechanical shock, and surge endurance required in automotive electronics. Its -55 °C to +150 °C operating range, MSL Level 1 rating, and glass-passivated junction make it appropriate for engine control, body control modules, and ADAS sensor units where reliability under thermal and electrical stress is mandatory. The SMAJ10AHE3_A/H carries the HE3 suffix denoting this qualification.
What does the "HE3" suffix indicate in SMAJ10AHE3_A/H?
The "HE3" suffix in SMAJ10AHE3_A/H denotes RoHS-compliant construction with AEC-Q101 qualification. It distinguishes this variant from commercial-grade versions (e.g., SMAJ10A-E3) and confirms that the SMAJ10AHE3_A/H has undergone full automotive reliability testing per JESD22 and AEC standards. The "_A/H" portion specifies packaging: 7-inch tape-and-reel with 1800-unit quantity and H-coded reel orientation.
How does SMAJ10AHE3_A/H differ from bidirectional TVS diodes like SMAJ10CA?
SMAJ10AHE3_A/H is unidirectional and functions only in reverse-bias avalanche mode, with polarity-sensitive cathode marking; SMAJ10CA is bidirectional and symmetrical, suppressing transients in both directions without polarity concern. The SMAJ10AHE3_A/H offers identical VWM (10 V) and VC (17.0 V) but cannot replace SMAJ10CA in AC-coupled or floating-signal applications such as telecom line interfaces unless circuit topology enforces defined polarity. Their package and mounting are identical.
What is the thermal resistance of SMAJ10AHE3_A/H, and how does it affect PCB layout?
The SMAJ10AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W and junction-to-lead resistance (RθJL) of 30 °C/W. These values assume minimum recommended copper pad layout (0.2" × 0.2" per terminal). To maintain safe junction temperatures under repetitive surges, designers must provide adequate copper area and avoid excessive trace length - especially for the cathode connection, which carries surge current. The SMAJ10AHE3_A/H thermal performance directly impacts sustained power dissipation capability in high-duty-cycle applications.
SMAJ10AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.1V
- Voltage - Clamping (Max) @ Ipp:
- 17V
- Current - Peak Pulse (10/1000µs):
- 23.5A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ10AHE3_A/H FAQ
1.How can I place an order for SMAJ10AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ10AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ10AHE3_A/H reliable?
The price and inventory of SMAJ10AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ10AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMAJ10AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ10AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ10AHE3_A/H?
SMAJ10AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ10AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ10AHE3_A/H?
For technical support, including SMAJ10AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ10AHE3_A/H requirements.
6.How does Aetrix verify that SMAJ10AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMAJ10AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ10AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMAJ10AHE3_A/H?
All SMAJ10AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ10AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ10AHE3_A/H part is unused and in its original packaging.
Return procedure for SMAJ10AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ10AHE3_A/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

