My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMAJ10AHE3_A/I
- Part No.:
- SMAJ10AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ10AHE3_A/I.pdf
- Description:
- TVS DIODE 10VWM 17VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:8,388
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ10AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features a 10 V stand-off voltage (VWM), 11.1–12.3 V breakdown voltage (VBR) at 1 mA, 17.0 V maximum clamping voltage (VC) at 23.5 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial electronics.
For engineers reviewing the SMAJ10AHE3_A/I datasheet, SMAJ10AHE3_A/I pinout, SMAJ10AHE3_A/I application, or SMAJ10AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT assembly on standard PCB pad layouts.
Technical Context
This TVS diode operates as a fast-acting shunt clamp during overvoltage events, leveraging an avalanche breakdown mechanism to divert transient energy away from protected circuitry. Its glass-passivated junction ensures stable VBR tolerance and long-term reliability under repetitive surge stress.
The device is rated for 40 A peak forward surge current (IFSM, 8.3 ms half-sine), supports -55 °C to +150 °C operating junction temperature range, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its 120 °C/W junction-to-ambient thermal resistance requires appropriate copper pad area (0.2" × 0.2") for full 400 W pulse handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working margin. |
| VBR min/max | 11.1 V / 12.3 V at 1 mA - Confirmed breakdown threshold range; ensures predictable turn-on during transients. |
| VC @ IPPM | 17.0 V at 23.5 A - Clamped voltage seen by protected circuit during 10/1000 μs surge; limits downstream stress. |
| PPPM | 400 W - Peak pulse power dissipation capability with 10/1000 μs waveform; validates protection level for IEC 61000-4-5 surges. |
| ID @ VWM | 1.0 μA - Reverse leakage at stand-off voltage; negligible loading on 10 V bias rails. |
| TJ max | +150 °C - Maximum junction temperature; enables use in under-hood automotive and high-ambient industrial environments. |
| Package | SMA (DO-214AC) - Standard surface-mount outline with cathode band marking; compatible with JEDEC-standard pick-and-place and reflow. |
Pinout & Package
Package: SMA (DO-214AC), molded plastic case with matte tin-plated leads, UL 94 V-0 rated compound, polarity indicated by cathode band on unidirectional types.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes clamping path during positive transients. |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., 10 V supply rail); avalanche conduction occurs when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and ADAS sensor interfaces under stress conditions. |
| 400 W peak pulse power | Supports robust protection against IEC 61000-4-5 Level 4 (4 kV) surges when mounted on recommended 5.0 mm × 5.0 mm copper pads. |
| Glass passivated junction | Ensures stable VBR over time and temperature; eliminates parameter drift due to moisture or contamination ingress. |
| MSL Level 1 | Allows unlimited floor life and single-reflow processing at 260 °C peak without baking or special handling. |
| Low profile SMA package | Enables high-density layout on space-constrained PCBs while maintaining thermal performance via exposed cathode pad. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between VCC and GND, clamping spikes above 12 V within nanoseconds. Use Value: Limits voltage seen by MCU to ≤17.0 V during 400 W surges, preventing latch-up or gate oxide damage. |
Use Scenario: Safeguarding analog output lines of pressure or temperature sensors connected to PLC analog inputs. IC Role / Device Role / Timing Role: TVS placed across signal and ground pins to suppress ESD and inductive switching noise on 0–10 V or 4–20 mA lines. Use Value: Sub-20 V clamping ensures sensor output remains within ADC input range and avoids false readings during field transients. |
| Consumer Device USB Port Protection | Telecom Line Card Surge Suppression |
Use Scenario: Adding secondary overvoltage protection on VBUS line of USB Type-A ports in set-top boxes and smart displays. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing hot-plug overshoot and nearby ESD events before they reach USB controller IC. Use Value: 1.0 μA leakage preserves VBUS regulation efficiency; 17.0 V clamping prevents damage to 5 V tolerant PHY circuits. |
Use Scenario: Front-end transient suppression on 48 V DC power feeds and RS-485 data lines in telecom base station line cards. IC Role / Device Role / Timing Role: Unidirectional TVS on power rail and bidirectional variants on differential data pairs to meet GR-1089-CORE requirements. Use Value: 400 W rating handles lightning-induced surges; AEC-Q101 qualification supports extended field life in outdoor cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ10A-E3/61 | Same electrical specs and SMA package; RoHS-compliant commercial grade without AEC-Q101 qualification. | Lacks automotive qualification; suitable for consumer/industrial designs where AEC-Q101 is not mandated. | Select when cost sensitivity outweighs automotive reliability requirements and no vehicle-level validation is needed. |
| SMAJ10AHM3_A/I | Halogen-free, RoHS-compliant, and AEC-Q101 qualified - identical electrical and thermal specs but different material composition. | Required for halogen-free compliance programs (e.g., EU EcoDesign, certain Tier 1 automotive specs). | Choose when halogen-free materials are contractually required and full AEC-Q101 traceability is mandatory. |
Compared with SMAJ10AHE3_A/I, SMAJ10A-E3/61 offers lower cost without automotive qualification, while SMAJ10AHM3_A/I adds halogen-free compliance at equivalent performance - enabling precise alignment with environmental and automotive program requirements.
Availability
SMAJ10AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor modules, and telecom power supplies requiring stable component supply with AEC-Q101 assurance and long-lifecycle support.
Supply support for SMAJ10AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade qualification.
The SMAJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure applications demanding AEC-Q101 compliance and repeatable clamping performance.
FAQ
What is the clamping voltage of SMAJ10AHE3_A/I at its rated peak pulse current?
The SMAJ10AHE3_A/I has a maximum clamping voltage (VC) of 17.0 V at 23.5 A peak pulse current (IPPM), measured with a 10/1000 μs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is confirmed in the Vishay datasheet revision 09-Jan-2024, page 2. The SMAJ10AHE3_A/I maintains this clamping performance across its specified operating temperature range.
Is SMAJ10AHE3_A/I qualified for automotive applications?
Yes, SMAJ10AHE3_A/I is AEC-Q101 qualified, as explicitly stated in the Vishay datasheet under "MECHANICAL DATA" and "ORDERING INFORMATION" sections. The "HE3" suffix denotes RoHS-compliant and AEC-Q101 qualified construction. This qualification covers stress tests including temperature cycling, humidity bias, and accelerated life testing - making SMAJ10AHE3_A/I suitable for under-hood and chassis-mounted automotive electronics.
What is the package type and mounting configuration for SMAJ10AHE3_A/I?
SMAJ10AHE3_A/I uses the SMA (DO-214AC) surface-mount package with cathode identification via a visible band. It is designed for reflow soldering on standard PCB pads - specifically 0.2" × 0.2" (5.0 mm × 5.0 mm) copper areas per terminal to achieve full 400 W pulse rating. The device meets MSL Level 1 and requires no pre-baking prior to assembly.
How does SMAJ10AHE3_A/I differ from bidirectional versions like SMAJ10CA?
SMAJ10AHE3_A/I is unidirectional, meaning it conducts only during reverse-bias overvoltage events (anode grounded, cathode to protected line), whereas SMAJ10CA is bidirectional and symmetrical - conducting in both directions. The SMAJ10AHE3_A/I has a defined polarity and cathode band; SMAJ10CA has no polarity marking. Their VBR and VC values differ: SMAJ10AHE3_A/I specifies 11.1–12.3 V VBR, while SMAJ10CA's VBR is 11.1–12.8 V, per datasheet Table on page 2.
What is the maximum junction temperature and thermal resistance of SMAJ10AHE3_A/I?
The SMAJ10AHE3_A/I has a maximum junction temperature (TJ max) of +150 °C and a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on the recommended 0.2" × 0.2" copper pads. Its junction-to-lead resistance (RθJL) is 30 °C/W, supporting effective heat transfer to PCB traces. These values are critical for derating calculations in high-temperature environments such as automotive under-hood applications.
SMAJ10AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.1V
- Voltage - Clamping (Max) @ Ipp:
- 17V
- Current - Peak Pulse (10/1000µs):
- 23.5A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ10AHE3_A/I FAQ
1.How can I place an order for SMAJ10AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ10AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ10AHE3_A/I reliable?
The price and inventory of SMAJ10AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ10AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMAJ10AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ10AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ10AHE3_A/I?
SMAJ10AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ10AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ10AHE3_A/I?
For technical support, including SMAJ10AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ10AHE3_A/I requirements.
6.How does Aetrix verify that SMAJ10AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMAJ10AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ10AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMAJ10AHE3_A/I?
All SMAJ10AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ10AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ10AHE3_A/I part is unused and in its original packaging.
Return procedure for SMAJ10AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ10AHE3_A/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
