Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMAJ12-E3/61

Part No.:
SMAJ12-E3/61
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixSMAJ12-E3/61.pdf
Description:
TVS DIODE 12VWM 22VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,459

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMAJ12-E3/61 from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in DO-214AC (SMA) package, designed for clamping transient overvoltages on power and signal lines. It features 12 V stand-off voltage (VWM), 22.0 V maximum clamping voltage (VC) at 18.2 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform - suitable for protecting MOSFETs, ICs, and sensor interfaces in industrial power supplies.

For engineers reviewing the SMAJ12-E3/61 datasheet, SMAJ12-E3/61 pinout, SMAJ12-E3/61 application, or SMAJ12-E3/61 equivalent, key selection criteria include unidirectional polarity, 13.3–16.3 V breakdown range, 1.0 µA max reverse leakage at VWM, 150 °C junction temperature rating, and RoHS-compliant matte tin-plated leads solderable per J-STD-002.

Technical Context

This TVS diode operates as a voltage-clamping protection device triggered by avalanche breakdown above its specified stand-off voltage. Its glass-passivated junction ensures stable breakdown characteristics and low incremental surge resistance, enabling fast response to transients induced by inductive switching or ESD events.

The device is rated for 400 W peak pulse power (derated to 300 W above 78 V), supports 40 A non-repetitive forward surge current (8.3 ms half-sine), and meets MSL Level 1 per J-STD-020 with 260 °C reflow compatibility. Thermal resistance is 120 °C/W junction-to-ambient on standard 0.2" × 0.2" copper pads.

Key Specifications

Parameter Value and Actual Design Meaning
Stand-off Voltage (VWM)12 V - Maximum continuous reverse operating voltage before clamping begins
Clamping Voltage (VC)22.0 V at 18.2 A - Peak voltage seen by protected circuit during 10/1000 µs surge
Breakdown Voltage (VBR)13.3–16.3 V at 1.0 mA - Confirmed avalanche initiation range under DC test conditions
Peak Pulse Power (PPPM)400 W - Sustains single 10/1000 µs transient without failure on recommended PCB layout
Reverse Leakage (ID)≤1.0 µA at 12 V - Negligible standby current draw in normal operation
Junction Temperature Range−55 °C to +150 °C - Enables use in automotive under-hood and industrial ambient environments
PackageDO-214AC (SMA) - Standard surface-mount outline with cathode band marking, compatible with automated placement

Pinout & Package

DO-214AC (SMA) package: molded plastic case with two terminals; cathode identified by a band on the body. Leads are matte tin plated, solderable per J-STD-002 and JESD22-B102, and meet JESD201 Class 1A whisker resistance.

Pin/Terminal Circuit Role Design Meaning
AnodeLow-side connection in unidirectional configurationConnected to ground or low-impedance return path; conducts during reverse transient
CathodeHigh-side connection with polarity markingConnected to protected line; avalanche conduction occurs when line voltage exceeds VWM

Key Features

Feature Design Value
400 W peak pulse power (10/1000 µs)Provides robust protection against IEC 61000-4-5 surge events up to 4 kV on 2 Ω source impedance
Glass-passivated chip junctionEnsures stable VBR tolerance and long-term reliability under thermal cycling and humidity stress
MSL Level 1 moisture sensitivityAllows unlimited floor life and standard reflow without baking preconditioning
RoHS-compliant & halogen-freeFulfills EU Directive 2011/65/EU and IPC-1752A material declaration requirements
Low incremental surge resistanceMinimizes VC overshoot during fast-rising transients (<1 ns rise time capability)

Applications

Industrial Motor Drives Automotive Body Control Modules

Use Scenario: Protection of gate drivers and microcontroller I/O pins against inductive kickback from relay and solenoid coils.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between MCU GPIO and external load interface to clamp negative transients to safe levels.

Use Value: Limits voltage excursion to ≤22.0 V during 18.2 A surge, preventing latch-up or oxide damage in 3.3 V/5 V logic circuits.

Use Scenario: Safeguarding LIN bus transceivers and sensor supply rails from load dump and jump-start surges.

IC Role / Device Role / Timing Role: Standoff-rated clamping device on 12 V battery-fed subsystems, activated only during overvoltage events.

Use Value: Withstands 400 W pulses while maintaining <1.0 µA leakage at nominal 12 V system voltage, minimizing quiescent current impact.

Consumer Power Adapters Telecom Interface Cards

Use Scenario: Secondary-side transient suppression on USB-C PD and AC/DC adapter output rails.

IC Role / Device Role / Timing Role: Fast-response overvoltage clamp downstream of synchronous rectifiers to protect USB PD controllers.

Use Value: Clamps 10/1000 µs surges within 1 ns, limiting output rail overshoot to 22.0 V and preserving USB compliance margins.

Use Scenario: Input line protection for Ethernet PHYs and RS-485 transceivers exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: Primary-level TVS on differential pair inputs to absorb common-mode transients before signal conditioning stages.

Use Value: Delivers 400 W pulse handling with DO-214AC footprint-enabling compact, high-density telecom board layouts without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ12A-E3/61Narrower VBR range (13.3–14.7 V); lower VC = 19.9 V at 20.1 ABetter clamping performance for low-voltage tolerant circuits (e.g., 3.3 V I/O), but reduced margin above VWMSelect SMAJ12A-E3/61 when tighter VBR tolerance and lower clamping voltage are required for sensitive receivers.
SMCJ12A-E3/57THigher PPPM = 1500 W; larger DO-214AB (SMC) package; same VWM/VC specsUsed where higher surge energy absorption is needed (e.g., front-end AC input stages), requiring PCB area increaseChoose SMCJ12A-E3/57T only if system-level surge testing exceeds 400 W capability-no pin compatibility with SMAJ12-E3/61.

Compared with SMAJ12A-E3/61, the SMAJ12-E3/61 offers wider VBR tolerance and slightly higher clamping voltage, making it more robust against manufacturing variation; versus SMCJ12A-E3/57T, it trades surge capacity for space-constrained designs where 400 W suffices and DO-214AC footprint is mandatory.

Availability

SMAJ12-E3/61 is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and consumer power adapters requiring stable component supply with full traceability and lifecycle management.

Supply support for SMAJ12-E3/61 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and application-specific performance.

The SMAJ series is engineered for high-energy transient suppression in space-constrained surface-mount applications, targeting industrial, automotive, and telecom systems where consistent clamping behavior and JEDEC-compliant manufacturability are critical.

FAQ

What is the polarity configuration of SMAJ12-E3/61?

The SMAJ12-E3/61 is a unidirectional TVS diode, with the cathode terminal marked by a band on the DO-214AC package body. It conducts only when the cathode is at a higher potential than the anode, making it suitable for DC line protection where polarity is fixed. This differs from bi-directional variants like SMAJ12CA, which suppress transients in both directions without polarity dependence.

Does SMAJ12-E3/61 meet automotive qualification standards?

The SMAJ12-E3/61 is RoHS-compliant commercial-grade; it does not carry AEC-Q101 qualification. For automotive applications requiring qualified parts, Vishay offers the SMAJ12HE3/61 variant (with HE3 suffix), which is AEC-Q101 qualified and rated for high-reliability automotive use. Always verify qualification status via the full part number before deployment in automotive systems.

What is the maximum clamping voltage of SMAJ12-E3/61 under surge conditions?

The SMAJ12-E3/61 has a maximum clamping voltage (VC) of 22.0 V at 18.2 A peak pulse current, measured with a 10/1000 µs waveform. This value represents the upper limit of voltage imposed on the protected circuit during worst-case surge events and is guaranteed across the full operating temperature range per the Vishay datasheet Document Number 88390.

Can SMAJ12-E3/61 be used in bidirectional signal line protection?

No - SMAJ12-E3/61 is unidirectional and unsuitable for bidirectional signal lines such as RS-485 or CAN without additional circuitry. For such applications, use the bi-directional SMAJ12CA-E3/61, which provides symmetrical clamping in both polarities and is explicitly characterized for dual-direction operation per the same datasheet family.

What is the thermal resistance of SMAJ12-E3/61 in standard mounting conditions?

The SMAJ12-E3/61 exhibits a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as defined in the Vishay datasheet. This value assumes still air and no additional heatsinking; actual thermal performance depends on PCB copper area, layer count, and airflow.

SMAJ12-E3/61 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
12V
Voltage - Breakdown (Min):
13.3V
Voltage - Clamping (Max) @ Ipp:
22V
Current - Peak Pulse (10/1000µs):
18.2A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

SMAJ12-E3/61 FAQ

1.How can I place an order for SMAJ12-E3/61 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMAJ12-E3/61 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMAJ12-E3/61 reliable?

The price and inventory of SMAJ12-E3/61 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ12-E3/61 is usually 5 days.

3.What payment methods are accepted for SMAJ12-E3/61?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ12-E3/61 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMAJ12-E3/61?

SMAJ12-E3/61 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMAJ12-E3/61 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMAJ12-E3/61?

For technical support, including SMAJ12-E3/61 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ12-E3/61 requirements.

6.How does Aetrix verify that SMAJ12-E3/61 is sourced from the original manufacturer or authorized distributors?

All SMAJ12-E3/61 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ12-E3/61 meets industry standards.

7.What is the process for return or replacement of SMAJ12-E3/61?

All SMAJ12-E3/61 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ12-E3/61, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMAJ12-E3/61 part is unused and in its original packaging.

Return procedure for SMAJ12-E3/61:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMAJ12-E3/61 Tags

  • SMAJ12-E3/61
  • SMAJ12-E3/61 PDF
  • SMAJ12-E3/61 Datasheet
  • SMAJ12-E3/61 Specifications
  • SMAJ12-E3/61 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMAJ12-E3/61
  • Buy SMAJ12-E3/61
  • SMAJ12-E3/61 Price
  • SMAJ12-E3/61 Distributor
  • SMAJ12-E3/61 Supplier
  • SMAJ12-E3/61 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER