Vishay General Semiconductor - Diodes Division SMAJ130AHE3_A/I

Overview

SMAJ130AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features a 130 V standoff voltage (V_WM), 144–159 V breakdown voltage (V_BR) at 1 mA, 209 V maximum clamping voltage (V_C) at 1.4 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power rails.

For engineers reviewing the SMAJ130AHE3_A/I datasheet, SMAJ130AHE3_A/I pinout, SMAJ130AHE3_A/I application, or SMAJ130AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.

Technical Context

This TVS diode operates as a fast-acting shunt protector: under normal conditions it presents high impedance (>1 μA leakage at 130 V), but triggers into low-impedance conduction when transient voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable V_BR tolerance (±5%) and repeatable clamping performance across temperature.

The device is rated for 40 A non-repetitive forward surge current (I_FSM) and exhibits a typical thermal resistance of 120 °C/W (junction-to-ambient) on standard PCB pads. Its MSL Level 1 rating supports lead-free reflow up to 260 °C peak, and the matte tin-plated leads comply with J-STD-002 solderability standards.

Key Specifications

Pinout & Package

Package: SMA (DO-214AC), molded plastic case with matte tin-plated leads; cathode indicated by a band on the body end.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMAJ130AHE3_A/I, the SMAJ130A-E3/61 offers identical surge performance at lower qualification cost, while SMAJ130CAHE3_A/I extends functionality to bidirectional signal paths - neither is pin-compatible replacement, but both share identical SMA footprint and thermal behavior.

Availability

SMAJ130AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom power supplies requiring stable component supply with AEC-Q101 traceability and long-term lifecycle support.

Supply support for SMAJ130AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SMAJ series is engineered for high-energy transient suppression in demanding environments - targeting automotive, industrial, and telecom applications where robustness, fast response, and standardized packaging are essential.

FAQ

What is the clamping voltage of SMAJ130AHE3_A/I at its rated peak pulse current?

The SMAJ130AHE3_A/I has a maximum clamping voltage (V_C) of 209 V at 1.4 A peak pulse current (I_PPM) under 10/1000 μs waveform conditions. This value is measured per JEDEC standards and defines the upper voltage limit imposed on protected circuitry during transient events. The SMAJ130AHE3_A/I maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C), making it suitable for under-hood automotive use.

Is SMAJ130AHE3_A/I qualified for automotive applications?

Yes, SMAJ130AHE3_A/I is AEC-Q101 qualified, verified through stress tests including high-temperature reverse bias (HTRB), temperature cycling, and ESD per JESD22-A114. The "HE3" suffix explicitly denotes AEC-Q101 qualification, RoHS compliance, and automotive-grade screening. This makes SMAJ130AHE3_A/I appropriate for engine control units, body electronics, and ADAS power domains where reliability under thermal and electrical stress is mandatory.

What is the standoff voltage rating for SMAJ130AHE3_A/I?

The standoff voltage (V_WM) of SMAJ130AHE3_A/I is 130 V - the maximum DC or continuous reverse voltage the device can withstand without entering breakdown. This rating ensures minimal leakage (<1.0 μA at 25 °C) during normal operation while providing sufficient margin above nominal system voltages (e.g., 12 V, 24 V, or 48 V rails). The SMAJ130AHE3_A/I is therefore suited for protecting higher-voltage subsystems such as automotive 48 V mild-hybrid architectures.

Does SMAJ130AHE3_A/I have a bidirectional version?

Yes, the bidirectional counterpart is SMAJ130CAHE3_A/I, which provides symmetrical clamping for AC or polarity-agnostic signal lines. While SMAJ130AHE3_A/I is unidirectional (cathode-banded), SMAJ130CAHE3_A/I has no polarity marking and clamps equally in both directions with identical V_BR, V_C, and P_PPM ratings. Both share the same SMA package, thermal characteristics, and AEC-Q101 qualification - enabling layout reuse when upgrading from unidirectional to bidirectional protection.

What is the thermal resistance of SMAJ130AHE3_A/I under standard mounting conditions?

The SMAJ130AHE3_A/I has a typical junction-to-ambient thermal resistance (R_θJA) of 120 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, per Vishay's recommended layout. Its junction-to-lead resistance (R_θJL) is 30 °C/W. These values enable accurate thermal modeling in high-power transient scenarios and confirm suitability for sustained operation at 150 °C junction temperature when derated appropriately per Fig. 2 in the datasheet.