My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMAJ130AHM3_A/H
- Part No.:
- SMAJ130AHM3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ130AHM3_A/H.pdf
- Description:
- TVS DIODE 130VWM 209VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:7,070
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ130AHM3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features a 130 V standoff voltage (VWM), 144–159 V breakdown voltage (VBR) at 1 mA, 209 V maximum clamping voltage (VC) at 1.4 A peak pulse current (IPPM), and 400 W peak pulse power (10/1000 μs waveform). It is used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power rails.
For engineers reviewing the SMAJ130AHM3_A/H datasheet, SMAJ130AHM3_A/H pinout, SMAJ130AHM3_A/H application, or SMAJ130AHM3_A/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, 1.4 A surge current rating, thermal resistance (RθJA = 120 °C/W), and halogen-free RoHS-compliant construction per JESD201 Class 2 whisker test.
Technical Context
This TVS diode operates as a clamping device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold (VBR = 144–159 V), limiting transient energy to safe levels for downstream circuitry. Its low incremental surge resistance and fast response time (<1 ns) ensure effective suppression of ESD, lightning-induced surges, and inductive switching spikes.
The SMAJ130AHM3_A/H is rated for 400 W peak pulse power (10/1000 μs) up to 78 V, derating to 300 W above that - confirmed for this variant at TA = 25 °C with 0.2" × 0.2" copper pads. It supports operating junction temperatures from –55 °C to +150 °C and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 130 V - Maximum continuous reverse working voltage before significant leakage; defines upper limit of normal operation. |
| VBR (Breakdown Voltage) | 144–159 V at IT = 1 mA - Voltage range where avalanche conduction begins; ensures reliable triggering without premature conduction. |
| VC (Clamping Voltage) | 209 V at IPPM = 1.4 A - Maximum voltage seen by protected circuit during 10/1000 μs transient; determines stress on downstream components. |
| PPPM (Peak Pulse Power) | 400 W (≤78 V), 300 W (>78 V) - Surge energy handling capability under standardized waveform; confirms robustness against common transients. |
| ID (Reverse Leakage) | 1.0 μA at VWM - Low leakage preserves system efficiency and prevents false triggering in high-impedance circuits. |
| TJ max. | +150 °C - Maximum junction temperature; enables use in under-hood automotive and high-ambient industrial environments. |
| RθJA | 120 °C/W - Thermal resistance from junction to ambient; informs PCB pad design and power derating requirements. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD22-B102. Polarity marked by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to lower-potential side (e.g., ground or return rail); completes clamping loop during reverse surge. |
| Cathode | Transient voltage sensing / clamping node | Connected to protected line (e.g., 130 V supply rail); conducts avalanche current when VAK exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for engine control, ADAS, and body electronics. |
| Halogen-free & RoHS-compliant (HM3 suffix) | Meets environmental compliance mandates (IEC 61249-2-21) and JESD201 Class 2 whisker resistance - required for Tier-1 automotive BOMs. |
| 400 W peak pulse power (10/1000 μs) | Handles IEC 61000-4-5 Level 4 surges (4 kV, 2 Ω source) on 130 V lines without degradation - eliminates need for external series impedance. |
| Low clamping ratio (VC/VBR ≈ 1.37) | Minimizes overvoltage stress on protected ICs - critical for 130 V-rated gate drivers and isolated DC-DC controllers. |
| MSL Level 1, 260 °C peak reflow | Enables standard SMT assembly without moisture sensitivity concerns - reduces factory handling cost and process risk. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 130 V battery-fed ECUs from load dump transients (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between 130 V rail and chassis ground. Use Value: Limits transient voltage to ≤209 V, preventing damage to 150 V-rated power management ICs and microcontrollers. |
Use Scenario: Safeguarding analog front-end inputs of pressure/temperature sensors connected to 130 V auxiliary supplies. IC Role / Device Role / Timing Role: Standoff protection element on sensor supply line, upstream of LDO or filter network. Use Value: Blocks >130 V spikes while maintaining <1.0 μA leakage at nominal voltage - avoids sensor offset drift. |
| Telecom DC Power Feeds | MOSFET Gate Driver Protection |
|
Use Scenario: Shielding -48 V to +130 V telecom rectifier outputs from lightning-induced surges (IEC 61000-4-5). IC Role / Device Role / Timing Role: Primary surge clamp on positive output rail, referenced to system ground. Use Value: Clamps 10/1000 μs surges to 209 V within nanoseconds - preserves integrity of downstream DC-DC converters. |
Use Scenario: Preventing gate oxide failure in high-side N-channel MOSFETs driven from 130 V bus in motor control inverters. IC Role / Device Role / Timing Role: Cathode-to-gate, anode-to-source configuration for bidirectional gate protection. Use Value: Absorbs Miller-induced voltage spikes during switching transitions - extends MOSFET lifetime in 100 kHz+ PWM systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ130AHE3_A/H | Same electrical specs, but RoHS-compliant (E3) instead of halogen-free (HM3); no AEC-Q101 qualification. | Approved for commercial/industrial use only; not certified for automotive under hood or safety-critical modules. | Select when halogen-free requirement is waived and automotive qualification is unnecessary. |
| SMAJ130A-M3/61 | Identical VWM/VBR/VC ratings, same SMA package, but packaged in 7" tape/reel (61 code) and lacks AEC-Q101 qualification. | Intended for high-volume consumer electronics; no automotive traceability or stress-test validation. | Choose for cost-sensitive non-automotive designs where full AEC-Q101 documentation is not mandated. |
Compared with SMAJ130AHM3_A/H, the HE3 variant trades halogen-free compliance and AEC-Q101 qualification for lower cost in commercial applications, while the M3/61 version offers identical performance without automotive validation or environmental certification - making SMAJ130AHM3_A/H the sole choice for production automotive systems requiring both.
Availability
SMAJ130AHM3_A/H is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, telecom DC feed protection, and MOSFET gate driver safeguarding requiring stable component supply across multi-year production cycles.
Supply support for SMAJ130AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade qualification.
The SMAJ series was developed specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where robust 400 W clamping and AEC-Q101 validation are mandatory.
FAQ
What is the clamping voltage of SMAJ130AHM3_A/H at its rated peak pulse current?
The SMAJ130AHM3_A/H has a maximum clamping voltage (VC) of 209 V at a peak pulse current (IPPM) of 1.4 A under the 10/1000 μs waveform. This value is measured per standard test conditions (TA = 25 °C, mounted on 0.2" × 0.2" copper pads) and defines the upper voltage limit imposed on protected circuitry during surge events. The SMAJ130AHM3_A/H maintains this clamping performance consistently across its qualified temperature range.
Is SMAJ130AHM3_A/H qualified for automotive applications?
Yes, SMAJ130AHM3_A/H is AEC-Q101 qualified, as indicated by the "HM3" suffix and confirmed in Vishay's ordering information and mechanical data tables. This qualification covers stress tests including high-temperature reverse bias (HTRB), temperature cycling, and ESD - validating its suitability for under-hood and safety-critical automotive systems. The SMAJ130AHM3_A/H meets all requirements for use in engine control units, ADAS power supplies, and body electronics.
What does the "HM3" suffix mean in SMAJ130AHM3_A/H?
The "HM3" suffix in SMAJ130AHM3_A/H denotes halogen-free, RoHS-compliant construction meeting JESD201 Class 2 whisker resistance, plus AEC-Q101 qualification. It distinguishes this variant from E3 (RoHS only), M3 (halogen-free, commercial grade), and HE3 (RoHS + AEC-Q101, but not halogen-free). The HM3 designation ensures compliance with stringent automotive environmental and reliability standards required by major Tier-1 suppliers.
Can SMAJ130AHM3_A/H be used in bidirectional configurations?
No, SMAJ130AHM3_A/H is a unidirectional TVS diode, as confirmed by its part number ending in "A" (not "CA") and its polarity marking (cathode band). Bidirectional operation requires the "CA" suffix (e.g., SMAJ130CA). Using SMAJ130AHM3_A/H in reverse-biased signal paths risks forward conduction and failure. For bidirectional protection at 130 V, select SMAJ130CAHM3_A/H or equivalent.
What is the thermal resistance and maximum power dissipation of SMAJ130AHM3_A/H?
The SMAJ130AHM3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W and a steady-state power dissipation (PD) rating of 3.3 W at TA = 50 °C on an infinite heatsink. These values guide PCB layout - minimum 0.2" × 0.2" copper pads per terminal are recommended to achieve rated pulse power. Derating applies above 25 °C ambient, per Figure 2 in the Vishay datasheet 88390.
SMAJ130AHM3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 130V
- Voltage - Breakdown (Min):
- 144V
- Voltage - Clamping (Max) @ Ipp:
- 209V
- Current - Peak Pulse (10/1000µs):
- 1.4A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ130AHM3_A/H FAQ
1.How can I place an order for SMAJ130AHM3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ130AHM3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ130AHM3_A/H reliable?
The price and inventory of SMAJ130AHM3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ130AHM3_A/H is usually 5 days.
3.What payment methods are accepted for SMAJ130AHM3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ130AHM3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ130AHM3_A/H?
SMAJ130AHM3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ130AHM3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ130AHM3_A/H?
For technical support, including SMAJ130AHM3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ130AHM3_A/H requirements.
6.How does Aetrix verify that SMAJ130AHM3_A/H is sourced from the original manufacturer or authorized distributors?
All SMAJ130AHM3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ130AHM3_A/H meets industry standards.
7.What is the process for return or replacement of SMAJ130AHM3_A/H?
All SMAJ130AHM3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ130AHM3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ130AHM3_A/H part is unused and in its original packaging.
Return procedure for SMAJ130AHM3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ130AHM3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
