My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMAJ160AHE3_A/H
- Part No.:
- SMAJ160AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ160AHE3_A/H.pdf
- Description:
- TVS DIODE 160VWM 259VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:3,821
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ160AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping high-energy transients on power and signal lines. It features a 160 V stand-off voltage (VWM), 178–197 V breakdown voltage (VBR) at 1 mA, 259 V maximum clamping voltage (VC) at 1.2 A peak pulse current (IPPM), and 400 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial motor drives and automotive power modules.
For engineers reviewing the SMAJ160AHE3_A/H datasheet, SMAJ160AHE3_A/H pinout, SMAJ160AHE3_A/H application, or SMAJ160AHE3_A/H equivalent, key selection criteria include clamping voltage margin vs. protected device's absolute maximum rating, thermal derating above 25 °C, unidirectional polarity alignment with DC rail orientation, and AEC-Q101 qualification status for automotive-grade reliability validation.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents <1.0 μA reverse leakage at 160 V; when subjected to transients exceeding its breakdown threshold, it avalanches rapidly (<1 ns response) to limit voltage across the protected node. Its glass-passivated junction ensures stable VBR tolerance and low dynamic impedance during surge events.
The device is rated for 40 A non-repetitive forward surge current (IFSM) and supports continuous power dissipation of 3.3 W at 50 °C ambient on infinite heatsink. Thermal resistance is 120 °C/W junction-to-ambient (RθJA) and 30 °C/W junction-to-lead (RθJL), requiring PCB copper pad design per Vishay's recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) layout for full 400 W pulse capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 160 V - maximum continuous reverse operating voltage before significant leakage; sets upper limit for DC rail protection without false triggering |
| VBR min/max | 178 V / 197 V at 1 mA - defines guaranteed avalanche onset range; determines minimum overvoltage margin before clamping begins |
| VC @ IPPM | 259 V at 1.2 A - clamped voltage during 10/1000 μs surge; must stay below protected IC's absolute max rating (e.g., 300 V-rated MOSFET) |
| PPPM | 400 W - peak pulse power handling with 10/1000 μs waveform; derates to 300 W above 78 V per spec, confirmed at 160 V rating |
| ID @ VWM | ≤1.0 μA - reverse leakage at stand-off voltage; ensures minimal quiescent power loss and no interference with high-impedance sensor biasing |
| TJ max | +150 °C - maximum junction temperature; enables operation in under-hood automotive or enclosed industrial enclosures without forced cooling |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD; suffix HE3 denotes this qualification |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-voltage reference; completes shunt path during transient conduction |
| Cathode | High-side connection point | Connected to protected line (e.g., 160 V DC bus); avalanche initiates from cathode to anode under overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power | Enables robust protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) on 160 V systems without thermal runaway |
| AEC-Q101 qualified | Validated for automotive power electronics including engine control units and battery management systems requiring long-term field reliability |
| Glass passivated junction | Ensures stable VBR over lifetime and temperature, critical for consistent clamping performance in industrial environments |
| MSL level 1 (260 °C peak) | Supports standard lead-free reflow profiles without moisture sensitivity concerns or pre-bake requirements |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., inductive switch-off), improving protection fidelity |
Applications
| Industrial Motor Drives | Automotive Power Modules |
|---|---|
|
Use Scenario: Protection of IGBT gate drivers and DC-link voltage sensing circuits against switching-induced transients in variable-frequency drives. IC Role / Device Role / Timing Role: Shunt clamping device placed across DC-link or gate resistor network to clamp voltage spikes before they reach sensitive control ICs. Use Value: Limits transient voltage to ≤259 V, maintaining safe margin below 300 V absolute maximum ratings of isolated gate drivers and ADC front-ends. |
Use Scenario: Surge suppression on 12 V/24 V auxiliary power rails feeding body control modules and lighting controllers in passenger vehicles. IC Role / Device Role / Timing Role: Unidirectional TVS connected between supply rail and chassis ground to divert load-dump and ISO 7637-2 Pulse 5a/b energy. Use Value: Withstands 40 A surge current and maintains clamping below 259 V, satisfying OEM requirements for post-regulator rail protection. |
| Telecom Power Supplies | Renewable Energy Inverters |
|
Use Scenario: Input-stage protection of AC/DC converters in base station power supplies exposed to lightning-induced surges on AC mains input. IC Role / Device Role / Timing Role: Primary-level TVS placed after bridge rectifier to clamp line-to-line and line-to-ground transients before bulk capacitor and PFC controller. Use Value: 400 W rating and 259 V clamping enable coordination with upstream MOVs and downstream OVP circuits in multi-stage protection schemes. |
Use Scenario: DC bus protection in solar string inverters where PV array transients couple into MPPT and DC-link monitoring circuits. IC Role / Device Role / Timing Role: Unidirectional suppressor mounted across 1000 V DC bus to clamp switching noise and grid fault reflections. Use Value: 160 V VWM allows use in segmented bus architectures; AEC-Q101 qualification supports extended outdoor service life up to 25 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ160A-E3/61 | Same electrical specs and SMA package, but commercial-grade (non-AEC-Q101 qualified); RoHS-compliant, MSL level 1 | Lacks automotive qualification; suitable for industrial/commercial power supplies where AEC-Q101 is not mandated | Select when cost sensitivity outweighs automotive reliability requirements and lifecycle traceability is not required |
| SMBJ160AHE3_A/H | Same VWM/VBR/VC ratings, but SMB (DO-214AA) package - 2.5 mm wider, higher thermal mass, 600 W PPPM rating | Higher power handling and improved thermal performance; requires larger PCB footprint and different pad layout | Choose when system-level surge testing exceeds 400 W or sustained transient repetition demands lower RθJA |
Compared with SMAJ160AHE3_A/H, SMAJ160A-E3/61 offers identical protection performance without automotive qualification, while SMBJ160AHE3_A/H delivers higher surge capacity in a physically larger package - enabling trade-offs between board space, reliability grade, and worst-case surge margin.
Availability
SMAJ160AHE3_A/H is available at Aetrix Electronics and suitable for industrial motor drives, automotive power modules, and telecom power supplies requiring stable component supply with AEC-Q101 assurance and full traceability.
Supply support for SMAJ160AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, efficiency, and application-specific optimization.
The SMAJ series is engineered for high-reliability transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where precise clamping, low leakage, and qualification-grade consistency are mandatory.
FAQ
What is the clamping voltage of SMAJ160AHE3_A/H at its rated peak pulse current?
The SMAJ160AHE3_A/H has a maximum clamping voltage (VC) of 259 V at 1.2 A peak pulse current (IPPM) with a 10/1000 μs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on the protected circuit during a surge event. Designers must verify that 259 V remains safely below the absolute maximum voltage rating of downstream components such as MOSFETs or gate drivers. The SMAJ160AHE3_A/H datasheet confirms this parameter in Table 1 under ELECTRICAL CHARACTERISTICS.
Is SMAJ160AHE3_A/H suitable for automotive applications?
Yes, SMAJ160AHE3_A/H is AEC-Q101 qualified, as indicated by the "HE3" suffix in its ordering code. This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and ESD, validating its suitability for automotive power electronics such as body control modules, battery disconnect units, and ADAS power rails. The SMAJ160AHE3_A/H meets automotive reliability requirements without derating for temperature or lifetime under defined operating conditions.
What is the thermal resistance of SMAJ160AHE3_A/H, and how does it affect PCB layout?
The SMAJ160AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W and junction-to-lead resistance (RθJL) of 30 °C/W. To achieve its full 400 W peak pulse power rating, Vishay specifies mounting on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. Reducing pad area increases thermal impedance, causing higher junction temperatures during repetitive surges - potentially degrading clamping consistency. The SMAJ160AHE3_A/H thermal data is documented in the THERMAL CHARACTERISTICS section of its datasheet.
How does the unidirectional configuration of SMAJ160AHE3_A/H impact circuit integration?
The SMAJ160AHE3_A/H is unidirectional, meaning it conducts only during reverse-biased overvoltage events - the cathode must be connected to the protected line and the anode to ground or low-side reference. This configuration prevents forward conduction during normal operation, eliminating DC loading on positive rails. Polarity is marked by a band on the SMA package; incorrect orientation renders the device ineffective. The SMAJ160AHE3_A/H datasheet specifies cathode identification and unidirectional IV characteristics in Figures 6 and 7.
What is the maximum reverse leakage current of SMAJ160AHE3_A/H at its stand-off voltage?
The SMAJ160AHE3_A/H exhibits a maximum reverse leakage current (ID) of 1.0 μA at its 160 V stand-off voltage (VWM), measured at 25 °C ambient. This ultra-low leakage ensures minimal power loss and avoids interference with high-impedance monitoring circuits such as voltage dividers or precision ADC inputs. Leakage increases with temperature and voltage stress, so designers should consult the derating curves in Figure 2 of the SMAJ160AHE3_A/H datasheet for elevated-temperature operation.
SMAJ160AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 160V
- Voltage - Breakdown (Min):
- 178V
- Voltage - Clamping (Max) @ Ipp:
- 259V
- Current - Peak Pulse (10/1000µs):
- 1.2A
- Power - Peak Pulse:
- 300W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ160AHE3_A/H FAQ
1.How can I place an order for SMAJ160AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ160AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ160AHE3_A/H reliable?
The price and inventory of SMAJ160AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ160AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMAJ160AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ160AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ160AHE3_A/H?
SMAJ160AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ160AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ160AHE3_A/H?
For technical support, including SMAJ160AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ160AHE3_A/H requirements.
6.How does Aetrix verify that SMAJ160AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMAJ160AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ160AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMAJ160AHE3_A/H?
All SMAJ160AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ160AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ160AHE3_A/H part is unused and in its original packaging.
Return procedure for SMAJ160AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ160AHE3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
