Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMAJ28AHE3/5A

Part No.:
SMAJ28AHE3/5A
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixSMAJ28AHE3/5A.pdf
Description:
TVS DIODE 28VWM 45.4VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,516

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMAJ28AHE3/5A from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for robust overvoltage protection of sensitive electronics. It features a 28 V stand-off voltage (VWM), 31.1–34.4 V breakdown voltage (VBR) at 1 mA, 45.4 V maximum clamping voltage (VC) at 8.8 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - deployed on IC power rails, MOSFET gate drivers, and sensor signal lines in automotive and industrial systems.

For engineers reviewing the SMAJ28AHE3/5A datasheet, SMAJ28AHE3/5A pinout, SMAJ28AHE3/5A application, or SMAJ28AHE3/5A equivalent, key selection criteria include its AEC-Q101 qualification, low incremental surge resistance, fast response time (<1 ps), and compatibility with automated SMT placement on 0.2" × 0.2" copper pads per terminal.

Technical Context

This unidirectional TVS diode operates as a voltage-clamping device triggered by transient overvoltages exceeding its reverse stand-off voltage (28 V). Its glass-passivated junction enables stable breakdown behavior and low leakage (<1 μA at VWM), while its thermal resistance (RθJA = 120 °C/W) supports operation up to +150 °C junction temperature.

The device delivers 400 W peak pulse power handling (derated to 300 W above 78 V), with clamping performance validated under standardized 10/1000 μs surge waveforms. Its polarity marking (cathode band) and matte tin-plated leads comply with J-STD-002 solderability and JESD201 Class 2 whisker resistance requirements.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off Voltage) 28 V - Maximum continuous reverse operating voltage before clamping initiates
VBR (Breakdown Voltage) 31.1–34.4 V at 1 mA - Confirmed voltage range where device enters avalanche conduction
VC (Clamping Voltage) 45.4 V at 8.8 A IPPM - Peak voltage seen by protected circuit during 10/1000 μs surge
PPPM (Peak Pulse Power) 400 W - Surge energy absorption capability under standard 10/1000 μs waveform
IPPM (Peak Pulse Current) 8.8 A - Maximum non-repetitive surge current the device safely clamps without failure
TJmax +150 °C - Maximum allowable junction temperature for reliable long-term operation
Package SMA (DO-214AC) - Surface-mount outline with 0.208" length, 0.157" width, and 0.090" height

Pinout & Package

Package: SMA (DO-214AC), surface-mount, single-axis molded case with cathode band marking on unidirectional variants. Dimensions: 5.28 mm × 3.99 mm × 2.29 mm (L × W × H); terminals are matte tin-plated for lead-free soldering compliance.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to ground or lower-potential node in unidirectional clamp configuration
Cathode (marked with band) Reverse-biased clamping terminal Connected to protected line (e.g., 28 V rail or signal trace) - conducts during overvoltage events

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock testing
400 W peak pulse power (10/1000 μs) Enables protection against ISO 7637-2 pulse 1, 2a, 3a/b, and IEC 61000-4-5 surges in 12 V/24 V systems
Glass passivated junction Ensures stable VBR tolerance and low parameter drift across temperature and lifetime
Low clamping ratio (VC/VBR ≈ 1.36) Minimizes stress on downstream components by limiting clamped voltage close to breakdown threshold
MSL Level 1 (J-STD-020) Supports reflow soldering at peak 260 °C without moisture-induced damage

Applications

Automotive Power Rail Protection Industrial Sensor Signal Line Protection

Use Scenario: Protecting 28 V supply rails in engine control units (ECUs) and body control modules (BCMs) from load dump and inductive switching transients.

IC Role / Device Role / Timing Role: Unidirectional voltage clamp placed between rail and ground, activated within <1 ps of overvoltage onset.

Use Value: Limits rail excursion to ≤45.4 V during 8.8 A surge, preventing latch-up or permanent damage to 30 V-rated microcontrollers and CAN transceivers.

Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) of pressure/temperature sensors in factory automation PLCs.

IC Role / Device Role / Timing Role: Low-capacitance (≈100 pF at 0 V) shunt protector mounted directly at connector interface.

Use Value: Clamps ESD (IEC 61000-4-2 ±15 kV contact) and burst noise (IEC 61000-4-4 ±2 kV) without distorting 1 kHz sensor bandwidth.

DC-DC Converter Input Stage MOSFET Gate Driver Transient Suppression

Use Scenario: Input-side surge suppression for 28 V input buck converters powering infotainment head units.

IC Role / Device Role / Timing Role: Primary front-end TVS absorbing high-energy transients before they reach input capacitors and controller ICs.

Use Value: Handles 400 W pulses without degradation, maintaining VWM stability across -55 °C to +150 °C ambient range.

Use Scenario: Gate-source protection of N-channel high-side MOSFETs in motor drive half-bridges subjected to Miller-induced voltage spikes.

IC Role / Device Role / Timing Role: Fast-response clamp between gate and source, limiting dV/dt-induced turn-on risk.

Use Value: Sub-100 ps response ensures clamping occurs before gate oxide breakdown (typically >20 V), preserving FET reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ28A-E3/5A Commercial-grade variant; same electrical specs but not AEC-Q101 qualified Lacks automotive qualification; suitable for industrial/commercial designs without automotive certification requirements Select when AEC-Q101 is not mandated and cost optimization is prioritized
SMAJ28AHM3/5A Halogen-free, RoHS-compliant, AEC-Q101 qualified - identical clamping and thermal specs Meets stricter environmental mandates (e.g., EU automotive OEM halogen-free policies) without performance trade-offs Choose for Tier 1 automotive programs requiring halogen-free materials and full AEC-Q101 compliance

Compared with SMAJ28AHE3/5A, the SMAJ28A-E3/5A offers identical protection performance at lower qualification level, while SMAJ28AHM3/5A adds halogen-free construction - both retain the same SMA footprint, clamping behavior, and thermal derating profile.

Availability

SMAJ28AHE3/5A is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, and DC-DC converter input stages requiring stable component supply with full AEC-Q101 traceability and long-term lifecycle support.

Supply support for SMAJ28AHE3/5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade validation.

The SMAJ series is engineered specifically for high-energy transient suppression in harsh environments - targeting 12 V/24 V/42 V automotive, industrial control, and telecom infrastructure applications where robustness and repeatable clamping are critical.

FAQ

What is the clamping voltage of SMAJ28AHE3/5A at its rated peak pulse current?

The SMAJ28AHE3/5A has a maximum clamping voltage (VC) of 45.4 V at its rated peak pulse current (IPPM) of 8.8 A under the standard 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and reflects worst-case voltage seen by protected circuitry during surge events - a critical parameter for ensuring downstream ICs remain within absolute maximum ratings.

Is SMAJ28AHE3/5A suitable for automotive applications?

Yes, SMAJ28AHE3/5A is AEC-Q101 qualified and explicitly designated for automotive use with ordering code suffix "HE3". It meets rigorous stress tests including temperature cycling, high-temperature operating life, and mechanical shock - making it appropriate for engine bay, chassis, and infotainment systems where reliability under thermal and vibration stress is mandatory.

What is the package type and mounting requirement for SMAJ28AHE3/5A?

SMAJ28AHE3/5A uses the SMA (DO-214AC) surface-mount package, with dimensions of 5.28 mm × 3.99 mm × 2.29 mm. It requires mounting on minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal for rated 400 W pulse power dissipation - smaller pads reduce thermal margin and may cause premature failure under repeated surges.

How does the breakdown voltage tolerance of SMAJ28AHE3/5A affect circuit design?

SMAJ28AHE3/5A specifies a breakdown voltage (VBR) range of 31.1 V to 34.4 V at 1 mA test current. Designers must ensure system operating voltage remains below the minimum VBR (31.1 V) to prevent premature conduction, while verifying that the maximum clamping voltage (45.4 V) stays below the absolute maximum rating of protected components - especially critical for 30 V-rated ICs.

Does SMAJ28AHE3/5A have polarity marking, and how is it oriented in-circuit?

Yes, SMAJ28AHE3/5A is unidirectional and features a visible cathode band on the package body. In-circuit, the banded end connects to the line being protected (e.g., 28 V rail), while the anode connects to ground - this orientation ensures proper reverse-bias operation and clamping action during positive transients on the protected node.

SMAJ28AHE3/5A Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
28V
Voltage - Breakdown (Min):
31.1V
Voltage - Clamping (Max) @ Ipp:
45.4V
Current - Peak Pulse (10/1000µs):
8.8A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

SMAJ28AHE3/5A FAQ

1.How can I place an order for SMAJ28AHE3/5A through Aetrix?

Please submit a Request for Quotation (RFQ) for SMAJ28AHE3/5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMAJ28AHE3/5A reliable?

The price and inventory of SMAJ28AHE3/5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ28AHE3/5A is usually 5 days.

3.What payment methods are accepted for SMAJ28AHE3/5A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ28AHE3/5A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMAJ28AHE3/5A?

SMAJ28AHE3/5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMAJ28AHE3/5A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMAJ28AHE3/5A?

For technical support, including SMAJ28AHE3/5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ28AHE3/5A requirements.

6.How does Aetrix verify that SMAJ28AHE3/5A is sourced from the original manufacturer or authorized distributors?

All SMAJ28AHE3/5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ28AHE3/5A meets industry standards.

7.What is the process for return or replacement of SMAJ28AHE3/5A?

All SMAJ28AHE3/5A units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ28AHE3/5A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMAJ28AHE3/5A part is unused and in its original packaging.

Return procedure for SMAJ28AHE3/5A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMAJ28AHE3/5A Tags

  • SMAJ28AHE3/5A
  • SMAJ28AHE3/5A PDF
  • SMAJ28AHE3/5A Datasheet
  • SMAJ28AHE3/5A Specifications
  • SMAJ28AHE3/5A Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMAJ28AHE3/5A
  • Buy SMAJ28AHE3/5A
  • SMAJ28AHE3/5A Price
  • SMAJ28AHE3/5A Distributor
  • SMAJ28AHE3/5A Supplier
  • SMAJ28AHE3/5A Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER