My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMAJ30AHE3/5A
- Part No.:
- SMAJ30AHE3/5A
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ30AHE3/5A.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:8,434
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ30AHE3/5A from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for robust overvoltage protection of sensitive electronics. It features a 30 V stand-off voltage (VWM), 33.3–36.8 V breakdown voltage (VBR) at 1 mA, 48.4 V maximum clamping voltage (VC) at 8.3 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - deployed on power rails and signal lines in automotive ECUs and industrial sensor interfaces.
For engineers reviewing the SMAJ30AHE3/5A datasheet, SMAJ30AHE3/5A pinout, SMAJ30AHE3/5A application, or SMAJ30AHE3/5A equivalent, key selection criteria include clamping performance under 8.3 A surge, AEC-Q101 qualification status, thermal resistance (RθJA = 120 °C/W), and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This unidirectional TVS diode operates as a shunt-clamping device that remains high-impedance below 30 V and rapidly transitions to low-impedance conduction above its 33.3 V minimum breakdown threshold. Its glass-passivated junction ensures stable leakage (<1 μA at VWM) and repeatable clamping behavior across temperature (-55 to +150 °C).
The device delivers 400 W peak pulse power handling (derated to 300 W above 78 V), with 48.4 V clamping at 8.3 A IPPM and 0.099 %/°C VBR temperature coefficient - enabling predictable overvoltage response in automotive and industrial environments where ambient temperature swings exceed 100 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - maximum continuous reverse operating voltage before significant leakage begins; defines safe working margin for 24 V nominal systems. |
| VBR min/max | 33.3 V / 36.8 V at 1 mA - verified breakdown range ensuring reliable turn-on during transients without premature conduction. |
| VC @ IPPM | 48.4 V at 8.3 A - clamping voltage limits downstream IC stress during 10/1000 μs surges per IEC 61000-4-5. |
| PPPM | 400 W - peak pulse power capability with 10/1000 μs waveform; supports repetitive 0.01 % duty cycle surges. |
| ID @ VWM | ≤1.0 μA - ultra-low reverse leakage preserves signal integrity and minimizes standby power loss. |
| TJ max | +150 °C - junction temperature rating enables use in under-hood automotive locations and enclosed industrial enclosures. |
| RθJA | 120 °C/W - thermal resistance indicates need for adequate PCB copper area (0.2" × 0.2" pads per terminal) for sustained power dissipation. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line (e.g., 24 V rail); conducts surge current to ground when V > VBR. |
| Anode (unbanded end) | Reference/ground return path | Typically tied to system ground plane; completes clamping loop during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensors per stress test requirements. |
| 400 W peak pulse power | Withstands IEC 61000-4-5 Level 4 (4 kV) surges on 24 V supply lines without degradation when mounted per recommended pad layout. |
| Glass passivated junction | Ensures long-term stability of VBR and leakage parameters across humidity, temperature cycling, and board-level reflow profiles. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow processes without moisture sensitivity concerns or baking requirements. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes voltage overshoot during fast transients, protecting 3.3 V/5 V logic interfaces downstream of DC-DC converters. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Guarding |
|---|---|
|
Use Scenario: Protecting 24 V supply inputs of engine control units (ECUs) against load dump and inductive switching transients per ISO 7637-2. IC Role / Device Role / Timing Role: Shunt-clamping TVS diode placed between battery rail and input filter capacitor. Use Value: Limits transient voltage to ≤48.4 V, preventing damage to upstream DC-DC controllers and microcontrollers rated for 40 V absolute maximum. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) of pressure/temperature sensors in factory automation PLC modules. IC Role / Device Role / Timing Role: Unidirectional transient suppressor connected between signal line and local ground reference. Use Value: Clamps ESD and cable discharge events up to ±15 kV (IEC 61000-4-2) while maintaining <1 μA leakage at 24 V common-mode bias. |
| Telecom Power Interface Protection | Consumer Device USB Port Surge Suppression |
|
Use Scenario: Securing -48 V DC telecom power feeds in remote radio units against lightning-induced surges and hot-swap transients. IC Role / Device Role / Timing Role: Reverse-biased TVS on negative rail relative to chassis ground, leveraging unidirectional polarity. Use Value: Withstands 400 W pulses with <10 ns response time, limiting voltage excursion to protect PoE controller ICs and isolation transformers. |
Use Scenario: Adding secondary surge protection on VBUS line of USB-C ports in smart home hubs and docking stations. IC Role / Device Role / Timing Role: Standoff-rated TVS placed after primary fuse and upstream of USB power delivery IC. Use Value: Provides 30 V hold-off margin above 5 V nominal operation while clamping 8.3 A surges to 48.4 V - preserving USB PD negotiation integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A-E3/5A | Commercial-grade version; lacks AEC-Q101 qualification and halogen-free certification. | Approved for non-automotive industrial and consumer designs only. | Select when cost sensitivity outweighs automotive qualification requirements. |
| SMAJ33AHE3/5A | Higher 33 V VWM and 36.7–40.6 V VBR range; 53.3 V VC at 7.5 A IPPM. | Better suited for 32 V nominal systems or where tighter clamping margin vs. higher VWM is prioritized. | Choose when protecting circuits with 30–36 V operating ranges and requiring lower leakage at elevated bias. |
Compared with SMAJ30AHE3/5A, SMAJ30A-E3/5A offers identical electrical specs but no automotive qualification, while SMAJ33AHE3/5A trades 3 V higher standoff for improved noise immunity at the cost of slightly higher clamping voltage - making SMAJ30AHE3/5A optimal for 24 V automotive power rail protection where AEC-Q101 compliance and precise 30 V hold-off are mandatory.
Availability
SMAJ30AHE3/5A is available at Aetrix Electronics and suitable for automotive ECU design, industrial sensor interface development, and telecom power feed protection requiring stable component supply and full traceability.
Supply support for SMAJ30AHE3/5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade validation.
The SMAJ series is engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where AEC-Q101 compliance and repeatable clamping performance are critical.
FAQ
What is the AEC-Q101 qualification status of SMAJ30AHE3/5A?
SMAJ30AHE3/5A is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet revision 09-Jan-2024. This qualification covers stress tests including HTGB, HTRB, TCT, and ESD per AEC-Q101 Rev D, validating its suitability for automotive under-hood and chassis applications. The qualification applies specifically to the HE3 variant - not to E3 or M3 versions.
How does the clamping voltage of SMAJ30AHE3/5A compare to its breakdown voltage?
SMAJ30AHE3/5A has a minimum breakdown voltage (VBR) of 33.3 V and a maximum clamping voltage (VC) of 48.4 V at 8.3 A IPPM, yielding a clamping ratio of approximately 1.45. This ratio reflects the device's ability to limit transient overvoltage while maintaining low dynamic impedance - critical for protecting downstream 40 V-rated ICs in 24 V systems without excessive voltage overshoot.
Can SMAJ30AHE3/5A be used in bidirectional configurations?
No - SMAJ30AHE3/5A is strictly unidirectional, as indicated by the "A" suffix and cathode band marking. Bidirectional variants carry the "CA" suffix (e.g., SMAJ30CA). Using SMAJ30AHE3/5A in reverse-biased AC or bipolar signal paths would result in forward conduction and failure; always verify polarity alignment during PCB layout.
What is the recommended PCB pad layout for optimal thermal performance of SMAJ30AHE3/5A?
Vishay specifies 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal for SMAJ30AHE3/5A to achieve rated 400 W peak pulse power. Smaller pads increase thermal resistance beyond the specified RθJA = 120 °C/W, risking junction overheating during repetitive surges. Thermal vias under pads are recommended for high-reliability automotive layouts.
Does SMAJ30AHE3/5A meet RoHS and halogen-free requirements?
SMAJ30AHE3/5A is RoHS-compliant and halogen-free, as confirmed by the "HE3" base suffix and Vishay's material categorization documentation (www.vishay.com/doc?99912). It satisfies JEDEC JS709C and IPC-1752A requirements for bromine, chlorine, and other restricted substances - supporting compliance in automotive and green electronics programs.
SMAJ30AHE3/5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 8.3A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ30AHE3/5A FAQ
1.How can I place an order for SMAJ30AHE3/5A through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ30AHE3/5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ30AHE3/5A reliable?
The price and inventory of SMAJ30AHE3/5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ30AHE3/5A is usually 5 days.
3.What payment methods are accepted for SMAJ30AHE3/5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ30AHE3/5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ30AHE3/5A?
SMAJ30AHE3/5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ30AHE3/5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ30AHE3/5A?
For technical support, including SMAJ30AHE3/5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ30AHE3/5A requirements.
6.How does Aetrix verify that SMAJ30AHE3/5A is sourced from the original manufacturer or authorized distributors?
All SMAJ30AHE3/5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ30AHE3/5A meets industry standards.
7.What is the process for return or replacement of SMAJ30AHE3/5A?
All SMAJ30AHE3/5A units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ30AHE3/5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ30AHE3/5A part is unused and in its original packaging.
Return procedure for SMAJ30AHE3/5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ30AHE3/5A Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
