Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMAJ30HE3/61

Part No.:
SMAJ30HE3/61
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixSMAJ30HE3/61.pdf
Description:
TVS DIODE 30VWM 53.5VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,873

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMAJ30HE3/61 from Vishay General Semiconductor is a high-reliability, AEC-Q101-qualified unidirectional transient voltage suppressor (TVS) in DO-214AC (SMA) package, designed for automotive and industrial overvoltage protection. It features 30 V stand-off voltage (VWM), 53.5 V maximum clamping voltage (VC) at 7.5 A peak pulse current (IPPM), and 400 W peak pulse power (10/1000 µs waveform) - enabling robust protection of MOSFETs, ICs, and sensor signal lines against inductive switching transients and ESD.

For engineers reviewing the SMAJ30HE3/61 datasheet, SMAJ30HE3/61 pinout, SMAJ30HE3/61 application, or SMAJ30HE3/61 equivalent, this device delivers verified automotive-grade surge immunity with low incremental surge resistance, fast response time, and RoHS-compliant matte tin-plated leads suitable for automated SMT assembly and 260 °C solder reflow.

Technical Context

The SMAJ30HE3/61 employs a glass-passivated silicon avalanche junction optimized for transient suppression in unidirectional configurations, with cathode band marking for polarity identification. Its thermal design supports junction temperatures from −55 °C to +150 °C and achieves 30 °C/W junction-to-lead thermal resistance under standard mounting conditions.

It operates with 1.0 mA test current (IT) for breakdown verification, exhibits ≤1.0 µA reverse leakage at 30 V (VWM), and maintains clamping performance across repetitive 0.01% duty-cycle surges - meeting JEDEC J-STD-020 MSL Level 1 and JESD201 Class 2 whisker resistance requirements.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 30 V - Maximum continuous reverse operating voltage before clamping begins; defines safe operating margin for 24 V automotive systems.
VBR min/max 33.3 V / 40.7 V at 1.0 mA - Confirmed breakdown range ensures reliable turn-on during overvoltage events without premature conduction.
VC @ IPPM 53.5 V at 7.5 A - Clamping voltage limits downstream component stress during 400 W transient surges (10/1000 µs).
PPPM 400 W - Peak pulse power rating enables protection against ISO 7637-2 Pulse 1/2a/5a transients in automotive ECUs.
IFSM 40 A - Surge current handling for 8.3 ms half-sine wave supports motor driver and relay coil suppression.
Junction Temp −55 °C to +150 °C - Wide operating range validated for under-hood automotive environments and industrial control cabinets.
Package DO-214AC (SMA) - Surface-mount outline with 0.2 × 0.2 inch copper pad thermal requirement; compatible with standard SMT pick-and-place.

Pinout & Package

DO-214AC (SMA) package: molded epoxy case with matte tin-plated leads, cathode band marking on one end. Mounting requires 0.2 × 0.2 inch (5.0 × 5.0 mm) copper pads per terminal for rated power dissipation.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry (uni-directional) Connected to protected line side; conducts during reverse transient to shunt energy to ground.
Cathode (banded end) Reverse-biased reference node Connected to system ground or low-impedance return path; defines clamping reference point and polarity.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive applications including engine control, body electronics, and ADAS sensors.
400 W peak pulse power (10/1000 µs) Withstands high-energy transients common in 24 V vehicle power networks without degradation.
Low clamping ratio (VC/VWM = 1.78) Minimizes voltage overshoot during clamping, reducing risk of latch-up or damage to downstream logic.
MSL Level 1 & JESD201 Class 2 Enables single-reflow assembly at 260 °C without moisture-related failure or whisker growth.
Glass-passivated junction Ensures stable electrical parameters and long-term reliability under thermal cycling and humidity stress.

Applications

Automotive Power Distribution Industrial Sensor Interface Protection

Use Scenario: Protecting 24 V supply rails in engine control units (ECUs) from load dump and inductive kickback.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery rail and local regulator input.

Use Value: Clamps transients up to 53.5 V while sustaining 400 W pulses, preventing regulator latch-up and MCU brownout.

Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) in factory automation PLC modules.

IC Role / Device Role / Timing Role: Line-side transient suppressor on 0–10 V or 4–20 mA signal paths.

Use Value: Limits induced surges to <54 V, preserving ADC input integrity and avoiding signal corruption during EMI events.

Motor Drive Gate Protection Telecom DC Power Input Stage

Use Scenario: Safeguarding high-side MOSFET gate drivers in HVAC blower modules subjected to relay bounce.

IC Role / Device Role / Timing Role: Clamp diode between gate driver output and ground, absorbing Miller-induced spikes.

Use Value: Fast response (<1 ns) and low dynamic impedance prevent gate oxide overstress during rapid dv/dt events.

Use Scenario: Front-end protection on −48 V telecom rectifier outputs exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: Primary unidirectional suppressor on DC input before DC/DC converter stage.

Use Value: Withstands repetitive 400 W surges per ITU-T K.20/K.21, maintaining system uptime in central office environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ30AHE3/61 Lower VBR range (33.3–36.8 V); tighter 10% VWM tolerance vs. standard SMAJ30HE3/61's 15%. Better suited for precision 24 V systems where clamping onset must be tightly controlled near nominal rail. Select SMAJ30AHE3/61 when VBR consistency across production lots is critical for fail-safe threshold alignment.
SMBJ30HE3/61 Same VWM/VC specs but in larger DO-214AA (SMB) package; 600 W PPPM rating (10/1000 µs). Higher power handling supports longer-duration transients; requires larger PCB footprint and thermal pad area. Choose SMBJ30HE3/61 only if system-level testing confirms >400 W surge exposure or extended pulse durations beyond 1000 µs.

Compared with SMAJ30AHE3/61, the SMAJ30HE3/61 offers broader VBR tolerance for cost-sensitive automotive modules, while SMBJ30HE3/61 trades board space for higher surge margin - neither is pin-compatible due to differing package footprints and thermal pad layouts.

Availability

SMAJ30HE3/61 is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, motor drive protection circuits, and telecom power input stages requiring stable component supply with AEC-Q101 assurance and full traceability.

Supply support for SMAJ30HE3/61 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial and automotive applications.

The SMAJ series was engineered specifically for surface-mount transient suppression in harsh environments, emphasizing AEC-Q101 compliance, low clamping voltage, and robust surge endurance in compact DO-214AC packaging.

FAQ

What is the key difference between SMAJ30HE3/61 and standard SMAJ30E3/61?

The SMAJ30HE3/61 is the high-reliability, AEC-Q101-qualified version with enhanced process controls, JESD201 Class 2 whisker resistance, and extended temperature validation. In contrast, SMAJ30E3/61 is commercial-grade and not certified for automotive use. Both share identical electrical specs and DO-214AC packaging, but only SMAJ30HE3/61 meets automotive qualification requirements.

Does SMAJ30HE3/61 support bidirectional transient suppression?

No - SMAJ30HE3/61 is a unidirectional TVS diode, indicated by its single cathode band marking and specified VBR/VC values for reverse operation only. For bidirectional protection, Vishay offers the SMAJ30CA or SMAJ30CAHE3/61 variants, which lack polarity marking and provide symmetrical clamping in both directions.

What is the maximum clamping voltage of SMAJ30HE3/61 under surge conditions?

The SMAJ30HE3/61 has a maximum clamping voltage (VC) of 53.5 V at 7.5 A peak pulse current (IPPM) using the standardized 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and forms the basis for downstream component voltage margining in designs using SMAJ30HE3/61.

Can SMAJ30HE3/61 be used in 12 V automotive systems?

While SMAJ30HE3/61 is rated for 30 V stand-off (VWM), it is intended for 24 V nominal systems where transient margins exceed 30 V. Using it in 12 V systems risks premature conduction due to normal supply ripple or cold-crank dips - Vishay recommends SMAJ12HE3/61 or SMAJ15HE3/61 for 12 V applications instead.

What PCB layout guidance applies to SMAJ30HE3/61 for optimal thermal performance?

To achieve rated 400 W pulse power, SMAJ30HE3/61 must be mounted on minimum 0.2 × 0.2 inch (5.0 × 5.0 mm) copper pads per terminal, per Vishay Document 88390. Thermal vias under pads and internal plane connections are recommended for sustained surge duty cycles. Avoid narrow traces or thermal bottlenecks between the SMAJ30HE3/61 cathode and ground plane.

SMAJ30HE3/61 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
30V
Voltage - Breakdown (Min):
33.3V
Voltage - Clamping (Max) @ Ipp:
53.5V
Current - Peak Pulse (10/1000µs):
7.5A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

SMAJ30HE3/61 FAQ

1.How can I place an order for SMAJ30HE3/61 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMAJ30HE3/61 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMAJ30HE3/61 reliable?

The price and inventory of SMAJ30HE3/61 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ30HE3/61 is usually 5 days.

3.What payment methods are accepted for SMAJ30HE3/61?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ30HE3/61 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMAJ30HE3/61?

SMAJ30HE3/61 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMAJ30HE3/61 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMAJ30HE3/61?

For technical support, including SMAJ30HE3/61 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ30HE3/61 requirements.

6.How does Aetrix verify that SMAJ30HE3/61 is sourced from the original manufacturer or authorized distributors?

All SMAJ30HE3/61 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ30HE3/61 meets industry standards.

7.What is the process for return or replacement of SMAJ30HE3/61?

All SMAJ30HE3/61 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ30HE3/61, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMAJ30HE3/61 part is unused and in its original packaging.

Return procedure for SMAJ30HE3/61:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMAJ30HE3/61 Tags

  • SMAJ30HE3/61
  • SMAJ30HE3/61 PDF
  • SMAJ30HE3/61 Datasheet
  • SMAJ30HE3/61 Specifications
  • SMAJ30HE3/61 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMAJ30HE3/61
  • Buy SMAJ30HE3/61
  • SMAJ30HE3/61 Price
  • SMAJ30HE3/61 Distributor
  • SMAJ30HE3/61 Supplier
  • SMAJ30HE3/61 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER