My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMAJ40AHE3_A/H
- Part No.:
- SMAJ40AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ40AHE3_A/H.pdf
- Description:
- TVS DIODE 40VWM 64.5VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:4,900
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ40AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on DC power rails and signal lines. It features a 40 V stand-off voltage (VWM), 44.4–49.1 V breakdown voltage (VBR) at 1 mA, 64.5 V maximum clamping voltage (VC) at 6.2 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial control systems.
For engineers reviewing the SMAJ40AHE3_A/H datasheet, SMAJ40AHE3_A/H pinout, SMAJ40AHE3_A/H application, or SMAJ40AHE3_A/H equivalent, key selection criteria include its AEC-Q101 qualification, unidirectional polarity with cathode band marking, low incremental surge resistance, and compatibility with automated SMT placement on standard PCB pad layouts per JEDEC DO-214AC footprint.
Technical Context
This TVS diode operates as a clamping device that remains non-conductive below VWM = 40 V and rapidly transitions to low-impedance conduction above VBR (min 44.4 V), limiting transient voltages to ≤64.5 V at 6.2 A. Its glass-passivated junction ensures stable avalanche characteristics and fast response time (<1 ns), critical for suppressing ESD and inductive switching spikes.
The device is rated for repetitive 10/1000 μs surges at 0.01% duty cycle (400 W up to 78 V; derated to 300 W above), with thermal resistance RθJA = 120 °C/W and RθJL = 30 °C/W. It meets MSL Level 1 per J-STD-020 and supports lead-free reflow up to 260 °C peak temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40 V - Maximum continuous reverse operating voltage before leakage exceeds 1 μA; defines safe DC rail margin. |
| VBR (min/max) | 44.4 V / 49.1 V at IT = 1 mA - Confirmed avalanche onset range; ensures reliable turn-on before system damage threshold. |
| VC @ IPPM | 64.5 V at 6.2 A - Clamped voltage during 10/1000 μs surge; directly limits stress on downstream ICs or MOSFETs. |
| PPPM | 400 W - Peak pulse power handling with 10/1000 μs waveform; enables protection against IEC 61000-4-5 Level 3 surges. |
| ID @ VWM | 1.0 μA - Reverse leakage at 40 V; negligible power loss and minimal impact on high-impedance sensor bias networks. |
| TJ max. | +150 °C - Maximum junction temperature; supports under-hood automotive and industrial ambient environments. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking on one end; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when voltage exceeds VBR. |
| Anode (unbanded end) | Reference node | Typically tied to system ground or lower-potential rail; completes clamping path during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics including engine control units and ADAS sensors requiring long-term reliability under thermal stress. |
| 400 W peak pulse power (10/1000 μs) | Supports robust protection against load dump and inductive kickback in 12 V/24 V vehicle subsystems. |
| Glass passivated junction | Ensures consistent avalanche behavior across temperature and lifetime, minimizing parameter drift in harsh environments. |
| MSL Level 1 moisture sensitivity | Enables direct use from reel without baking; compatible with standard SMT reflow profiles up to 260 °C peak. |
| Low clamping ratio (VC/VBR ≈ 1.38) | Minimizes overvoltage overshoot during fast transients, reducing risk of latch-up or gate oxide damage in protected FETs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V supply lines feeding microcontrollers and CAN transceivers in body control modules. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between VCC and GND to shunt load-dump transients. Use Value: Limits voltage to ≤64.5 V during ISO 7637-2 Pulse 5a (load dump), preventing reset or permanent damage to 5 V/3.3 V logic. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) in factory automation pressure sensors. IC Role / Device Role / Timing Role: Bidirectional-capable variant not used; SMAJ40AHE3_A/H serves as unidirectional clamp on powered signal return path. Use Value: Suppresses EFT bursts (IEC 61000-4-4) and cable discharge events while adding <1 μA leakage at 40 V operating margin. |
| DC-DC Converter Input Stage | MOSFET Gate Driver Protection |
|
Use Scenario: Input-side surge suppression for buck converters in telecom power supplies subjected to lightning-induced surges. IC Role / Device Role / Timing Role: Primary transient limiter upstream of input capacitor and controller IC. Use Value: Withstands 400 W pulses without degradation, maintaining regulation integrity during 10/1000 μs line surges per IEC 61000-4-5. |
Use Scenario: Clamping gate-source voltage spikes on N-channel MOSFETs driving solenoids in HVAC actuators. IC Role / Device Role / Timing Role: Connected between gate and source to prevent VGS overstress beyond ±20 V rating. Use Value: Fast <1 ns response captures sub-microsecond ringing; 64.5 V VC ensures gate oxide remains within safe operating area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ40A-E3/61 | Same electrical specs and SMA package; RoHS-compliant commercial grade without AEC-Q101 qualification. | Lacks automotive qualification; suitable for industrial/commercial designs where AEC-Q101 is not mandated. | Select SMAJ40AHE3_A/H when automotive compliance, extended temperature validation, or long-term field reliability are required. |
| SMBJ40AHE3_A/H | Same VWM/VBR/VC ratings but in larger SMB (DO-214AA) package with 600 W PPPM rating. | Higher power handling enables longer surge duration tolerance; requires larger PCB footprint and different pad layout. | Choose SMBJ40AHE3_A/H only if system-level surge tests exceed 400 W or thermal dissipation demands lower RθJA. |
Compared with SMAJ40A-E3/61, SMAJ40AHE3_A/H adds AEC-Q101 qualification for automotive use without changing clamping performance; versus SMBJ40AHE3_A/H, it trades 200 W pulse power headroom for 30% smaller board area and identical mounting process compatibility.
Availability
SMAJ40AHE3_A/H is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, DC-DC converter inputs, and MOSFET gate protection circuits requiring stable component supply with full traceability and lifecycle management.
Supply support for SMAJ40AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.
The SMAJ series is engineered for high-reliability transient suppression in automotive, industrial, and telecom infrastructure, delivering consistent clamping under repetitive surge stress and extreme temperature conditions.
FAQ
What is the clamping voltage of SMAJ40AHE3_A/H at its rated peak pulse current?
The SMAJ40AHE3_A/H has a maximum clamping voltage (VC) of 64.5 V at 6.2 A peak pulse current (IPPM) with a 10/1000 μs waveform. This value is measured per standard test conditions in the Vishay datasheet (Document Number: 88390) and defines the upper voltage limit imposed on protected circuitry during surge events. The SMAJ40AHE3_A/H maintains this clamping performance across its qualified operating temperature range.
Is SMAJ40AHE3_A/H suitable for automotive applications?
Yes, SMAJ40AHE3_A/H is AEC-Q101 qualified, meaning it has passed rigorous stress tests including temperature cycling, high-temperature reverse bias, and ESD per automotive reliability standards. Its construction - glass-passivated junction, MSL Level 1 rating, and operation up to +150 °C junction temperature - makes SMAJ40AHE3_A/H appropriate for under-hood and chassis-mounted automotive electronics such as body control modules and power distribution units.
What does the "HE3" suffix indicate in SMAJ40AHE3_A/H?
The "HE3" suffix in SMAJ40AHE3_A/H denotes a RoHS-compliant, AEC-Q101 qualified version with matte tin-plated leads. The "H" indicates the packaging configuration (7" tape and reel, 1800 units), while "E3" specifies the environmental compliance level. This distinguishes SMAJ40AHE3_A/H from commercial-grade variants like SMAJ40A-E3/61, which lack automotive qualification despite identical electrical parameters.
How does SMAJ40AHE3_A/H differ from bidirectional TVS diodes like SMAJ40CA?
SMAJ40AHE3_A/H is unidirectional and features a cathode band marking; it conducts only in reverse bias above VBR and blocks forward current like a rectifier. In contrast, SMAJ40CA is bidirectional with no polarity marking and symmetrical clamping in both directions. SMAJ40AHE3_A/H is selected for DC rail protection where polarity is fixed, whereas SMAJ40CA suits AC-coupled or floating signal lines needing dual-polarity suppression.
What is the thermal resistance of SMAJ40AHE3_A/H, and how does it affect layout design?
SMAJ40AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W and junction-to-lead resistance (RθJL) of 30 °C/W, measured on 0.2" × 0.2" copper pads. These values require careful PCB layout: minimum recommended pad size must be maintained, and thermal vias or copper pours should be added if operating near PD = 3.3 W continuous dissipation. Layout directly impacts sustained surge repetition rate capability for SMAJ40AHE3_A/H.
SMAJ40AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.4V
- Voltage - Clamping (Max) @ Ipp:
- 64.5V
- Current - Peak Pulse (10/1000µs):
- 6.2A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ40AHE3_A/H FAQ
1.How can I place an order for SMAJ40AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ40AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ40AHE3_A/H reliable?
The price and inventory of SMAJ40AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ40AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMAJ40AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ40AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ40AHE3_A/H?
SMAJ40AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ40AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ40AHE3_A/H?
For technical support, including SMAJ40AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ40AHE3_A/H requirements.
6.How does Aetrix verify that SMAJ40AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMAJ40AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ40AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMAJ40AHE3_A/H?
All SMAJ40AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ40AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ40AHE3_A/H part is unused and in its original packaging.
Return procedure for SMAJ40AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ40AHE3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
