Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Taiwan Semiconductor Corporation SMAJ43H

Part No.:
SMAJ43H
Manufacturer:
Taiwan Semiconductor Corporation
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixSMAJ43H.pdf
Description:
TVS DIODE 43VWM 76.7VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,388

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMAJ43H from Taiwan Semiconductor is a unidirectional 400W surface-mount transient voltage suppressor (TVS) diode in DO-214AC (SMA) package, with 43V working stand-off voltage (VWM), 47.8–58.4V breakdown voltage (VBR), and 76.7V clamping voltage (VC) at 5.2A peak pulse current. It delivers fast response (<1.0ps), low leakage (<1μA @ 43V), and AEC-Q101 qualification for automotive-grade surge protection in DC/DC converters and power supplies.

For engineers reviewing the SMAJ43H datasheet, SMAJ43H pinout, SMAJ43H application, or SMAJ43H equivalent, this page provides verified electrical parameters, clamping behavior under 10/1000μs transients, DO-214AC mechanical layout guidance, ISO 7637-2 Pulse 1/2a/2b/3a/3b compliance status, and direct alternatives with documented VWM/VC/IPPM trade-offs.

Technical Context

The SMAJ43H operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its 47.8V minimum breakdown threshold at 1mA test current. Its glass-passivated junction ensures stable VBR tolerance (±5% typical) and low leakage across -55°C to +150°C operating range.

Under 10/1000μs waveform stress, it clamps at ≤76.7V while conducting 5.2A peak impulse current, delivering 400W peak pulse power below 78V - consistent with IEC 61000-4-5 and ISO 7637-2 immunity requirements for automotive electronics.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 43 V - Maximum continuous reverse operating voltage before conduction begins; sets system overvoltage trip margin.
VBR min/max 47.8 V / 58.4 V - Breakdown occurs within this band at 1 mA; defines turn-on consistency across production lots.
VC @ IPPM 76.7 V @ 5.2 A - Clamped voltage during 10/1000μs surge; determines protected circuit's maximum transient exposure.
PPPM 400 W - Peak pulse power handling per 10/1000μs waveform; supports high-energy ESD and load-dump suppression.
IR @ VWM <1 μA - Reverse leakage at rated stand-off voltage; ensures minimal standby power loss in always-on systems.
TJ max +150 °C - Maximum junction temperature; enables use in under-hood automotive environments without derating.
Package DO-214AC (SMA) - Industry-standard surface-mount outline with 0.060 g mass; compatible with automated pick-and-place.

Pinout & Package

DO-214AC (SMA) package: molded epoxy case with matte tin-plated leads, polarity indicated by cathode band. Weight: 0.060 g. Meets UL 94V-0 flammability and JESD201 Class 2 whisker resistance.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential side (e.g., GND or return path); conducts during forward surge events up to 40A IFSM.
Cathode Reverse-biased clamping terminal Connected to protected line (e.g., 43V rail); initiates avalanche conduction when reverse voltage exceeds VBR.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control units and body electronics per stress test requirements.
Glass passivated junction Ensures long-term VBR stability and low IR drift over temperature and lifetime, critical for safety-critical power rails.
Fast response time <1.0 ps rise-to-breakdown - limits voltage overshoot during nanosecond-scale ESD events (IEC 61000-4-2).
ISO 7637-2 compliance Meets Pulse 1 (inductive load dump), Pulse 2a/2b (switching transients), and Pulse 3a/3b (capacitive coupling) waveforms.
Halogen-free & RoHS Complies with IEC 61249-2-21 and EU RoHS Directive 2011/65/EU for environmentally constrained supply chains.

Applications

Automotive Power Rail Protection Industrial DC/DC Converter Input

Use Scenario: Protecting 42V battery-connected ECUs against load dump transients up to ±120V per ISO 7637-2 Pulse 5a.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between battery rail and DC/DC input stage.

Use Value: Limits peak voltage to ≤76.7V during 400W surges, preventing damage to downstream buck controller ICs rated for 60V max input.

Use Scenario: Safeguarding isolated 48V-to-12V DC/DC modules in factory automation controllers exposed to switching noise.

IC Role / Device Role / Timing Role: Standoff protection on primary-side input, absorbing repetitive 10/1000μs spikes from relay coil collapse.

Use Value: Maintains <1μA leakage at 43V nominal, avoiding unnecessary quiescent current draw while clamping transients within safe margin.

LED Driver Overvoltage Suppression Telecom Power Adapter Input

Use Scenario: Shielding constant-current LED drivers in vehicle lighting from alternator-induced surges during cold cranking.

IC Role / Device Role / Timing Role: Parallel-connected TVS on driver input, activated only during overvoltage excursions beyond 43V.

Use Value: Withstands 40A single half-sine forward surge (IFSM), surviving repeated ignition-cycle transients without degradation.

Use Scenario: Front-end protection in universal-input AC/DC adapters supplying PoE-powered devices.

IC Role / Device Role / Timing Role: Secondary-side transient suppressor on 43V intermediate bus feeding Ethernet PHYs and controllers.

Use Value: Delivers 400W peak pulse power at 10/1000μs, meeting EN 61000-4-5 Level 3 (2kV line-earth) immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
Littelfuse SMAJ43A Lower VBR range (47.8–52.8V vs. 47.8–58.4V); tighter 5% VBR tolerance; same DO-214AC package. Preferred where precise clamping onset is required, e.g., narrow-margin 43V LDO inputs. Select SMAJ43A when tighter VBR distribution improves system-level surge margin predictability.
ON Semiconductor SMAJ43A Identical VWM/VBR/VC specs; AEC-Q101 qualified; same 400W PPPM rating but higher IR limit (5μA vs. 1μA @ VWM). Better suited for high-humidity industrial environments where long-term IR stability is prioritized over ultra-low leakage. Choose ON Semi SMAJ43A if board-level humidity exposure exceeds 85% RH and leakage growth must be minimized.

Compared with SMAJ43H, SMAJ43A variants offer tighter VBR control or relaxed IR limits - enabling optimization for either precision clamping onset or environmental robustness - while maintaining identical DO-214AC footprint and 400W surge capability.

Availability

SMAJ43H is available at Aetrix Electronics and suitable for automotive power rail protection, industrial DC/DC converter input stages, and LED driver overvoltage suppression requiring stable component supply with AEC-Q101 qualification and ISO 7637-2 compliance.

Supply support for SMAJ43H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in TVS diodes, rectifiers, and power MOSFETs since 1979.

The SMAJ series was developed specifically for automotive and industrial transient suppression, emphasizing AEC-Q101 reliability, fast clamping response, and compatibility with automated SMT assembly lines.

FAQ

What is the maximum clamping voltage of SMAJ43H under standard 10/1000μs surge conditions?

The SMAJ43H clamps to a maximum of 76.7 V when subjected to its rated 5.2 A peak impulse current under the standardized 10/1000μs waveform. This value is measured at TA = 25°C and defines the upper voltage limit imposed on protected circuitry during transient events. The SMAJ43H maintains this clamping performance across its full operating temperature range (-55°C to +150°C), with minor derating above 25°C per the manufacturer's pulse derating curve.

Is SMAJ43H suitable for bidirectional transient protection applications?

No, SMAJ43H is a unidirectional TVS diode intended for protection of DC circuits with defined polarity. For bidirectional applications such as AC lines or differential data buses, Taiwan Semiconductor specifies the SMAJ43CH variant (with CH suffix), which features symmetrical breakdown in both directions. Using SMAJ43H in a bidirectional configuration would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit.

Does SMAJ43H meet automotive qualification standards?

Yes, SMAJ43H is explicitly AEC-Q101 qualified per the manufacturer's datasheet, confirming its suitability for automotive electronic systems. It also meets ISO 7637-2 Pulse 1, 2a, 2b, 3a, and 3b test requirements - covering load dump, supply interruption, and capacitive coupling transients common in vehicle electrical networks. These qualifications apply to the full DO-214AC packaged device, not just the die.

What is the reverse leakage current specification for SMAJ43H at its working stand-off voltage?

The SMAJ43H exhibits a maximum reverse leakage current (IR) of 1 μA when biased at its 43 V working stand-off voltage (VWM) and tested at TA = 25°C. This low leakage ensures minimal power loss in always-on automotive modules and preserves battery life in infotainment or telematics systems. Leakage remains below 5 μA up to +125°C, supporting operation in under-hood environments.

Can SMAJ43H be used in place of SMAJ43AH in a design?

SMAJ43H and SMAJ43AH are not interchangeable without circuit review: SMAJ43H has a wider VBR range (47.8–58.4 V) versus SMAJ43AH (47.8–52.8 V), resulting in higher worst-case clamping voltage (76.7 V vs. 69.4 V). If the protected IC has tight absolute maximum ratings near 70 V, SMAJ43AH may provide superior margin. SMAJ43H offers broader VBR tolerance, which can simplify binning but requires verification of worst-case clamping headroom.

SMAJ43H Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Package/Case:
DO-214AC, SMA
Series:
SMAJ
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
43V
Voltage - Breakdown (Min):
47.8V
Voltage - Clamping (Max) @ Ipp:
76.7V
Current - Peak Pulse (10/1000µs):
5.2A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

SMAJ43H FAQ

1.How can I place an order for SMAJ43H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMAJ43H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMAJ43H reliable?

The price and inventory of SMAJ43H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ43H is usually 5 days.

3.What payment methods are accepted for SMAJ43H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ43H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMAJ43H?

SMAJ43H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMAJ43H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMAJ43H?

For technical support, including SMAJ43H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ43H requirements.

6.How does Aetrix verify that SMAJ43H is sourced from the original manufacturer or authorized distributors?

All SMAJ43H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ43H meets industry standards.

7.What is the process for return or replacement of SMAJ43H?

All SMAJ43H units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ43H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMAJ43H part is unused and in its original packaging.

Return procedure for SMAJ43H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMAJ43H Tags

  • SMAJ43H
  • SMAJ43H PDF
  • SMAJ43H Datasheet
  • SMAJ43H Specifications
  • SMAJ43H Images
  • Taiwan Semiconductor Corporation
  • Taiwan Semiconductor Corporation SMAJ43H
  • Buy SMAJ43H
  • SMAJ43H Price
  • SMAJ43H Distributor
  • SMAJ43H Supplier
  • SMAJ43H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER