My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMAJ45A-E3/5A
- Part No.:
- SMAJ45A-E3/5A
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ45A-E3/5A.pdf
- Description:
- TVS DIODE 45VWM 72.7VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:6,434
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ45A-E3/5A from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping fast-rising voltage transients on power and signal lines. It features a 45 V stand-off voltage (VWM), 50.0–55.3 V breakdown voltage (VBR) at 1 mA, 72.7 V maximum clamping voltage (VC) at 5.5 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power rails.
For engineers reviewing the SMAJ45A-E3/5A datasheet, SMAJ45A-E3/5A pinout, SMAJ45A-E3/5A application, or SMAJ45A-E3/5A equivalent, this device is selected for robust ESD and surge protection where low clamping voltage, fast response (<1 ps), and AEC-Q101-compliant reliability are required in space-constrained PCB layouts.
Technical Context
The SMAJ45A-E3/5A operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5 %) and low leakage (<1.0 μA at 45 V), while thermal resistance (RθJA = 120 °C/W) supports operation up to +150 °C junction temperature under defined pad layout conditions.
It delivers 400 W peak pulse power (10/1000 μs) at TA = 25 °C, derating linearly above 25 °C per Fig. 2; clamping performance is validated at IPPM = 5.5 A, with VC = 72.7 V ensuring safe voltage limiting for 3.3 V/5 V/12 V rail protection without overstressing downstream components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 45 V - Maximum continuous reverse operating voltage before conduction begins; sets upper limit for normal circuit operation. |
| VBR (min/max) | 50.0 V / 55.3 V at IT = 1 mA - Confirmed avalanche onset range; ensures predictable turn-on during transients. |
| VC @ IPPM | 72.7 V at 5.5 A - Clamped voltage during 10/1000 μs surge; defines worst-case stress on protected IC or MOSFET. |
| PPPM | 400 W - Peak pulse power handling capability; enables suppression of high-energy lightning-induced surges per IEC 61000-4-5. |
| IFSM | 40 A - Non-repetitive forward surge current rating (8.3 ms half-sine); supports inrush or fault-current events in DC power paths. |
| TJ max. | +150 °C - Maximum junction temperature; allows deployment in under-hood automotive or industrial environments. |
| Package | SMA (DO-214AC) - Surface-mount outline with 5.28 mm × 4.93 mm footprint and 2.29 mm height; compatible with automated placement and reflow. |
Pinout & Package
Package: SMA (DO-214AC), molded plastic case with matte tin-plated leads; polarity indicated by cathode band on unidirectional devices. Mounting requires 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to lower-potential side (e.g., GND or return path); defines directionality of clamping action. |
| Cathode | Reverse voltage input / Clamping node | Connected to protected line (e.g., 45 V supply rail); conducts when transient exceeds VWM, shunting surge to ground. |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 μs) | Enables compliance with IEC 61000-4-5 Level 4 (4 kV) surge testing on 12 V/24 V systems without external series impedance. |
| 72.7 V clamping voltage at 5.5 A | Limits transient overvoltage to ≤1.6× VWM, protecting 48 V-rated components such as CAN transceivers or gate drivers. |
| Low incremental surge resistance | Minimizes VC rise under high di/dt, improving clamping precision for fast-edge transients like EFT (IEC 61000-4-4). |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow profiles without moisture-related popcorning; eliminates pre-bake requirement. |
| AEC-Q101 qualified option available | HE3/HM3 suffix variants meet automotive qualification; SMAJ45A-E3/5A is commercial-grade but shares identical die and construction. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Suppresses load-dump and jump-start transients on 42 V battery-connected ECUs and body control modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and DC-DC input, clamping spikes within 1 ns. Use Value: Limits voltage to 72.7 V during 100 A/100 ms load dump, preventing damage to 80 V-rated buck controllers. |
Use Scenario: Shields analog front-end inputs of pressure/temperature sensors exposed to motor switching noise in factory automation. IC Role / Device Role / Timing Role: Standoff protection element on 24 V sensor supply line, placed upstream of LDO and ADC. Use Value: Blocks 400 W surges induced by nearby contactor switching while maintaining <1 μA leakage at 24 V for signal integrity. |
| Telecom DC Power Input Protection | Consumer USB-C Power Delivery Line |
|
Use Scenario: Guards 48 V PoE+ (IEEE 802.3at) powered device inputs against Ethernet cable ESD and lightning coupling. IC Role / Device Role / Timing Role: Primary surge clamp on PSE-side DC input, coordinated with secondary TVS and common-mode chokes. Use Value: Achieves 72.7 V clamping at 5.5 A, keeping downstream PMICs and PHYs within absolute maximum ratings during surge events. |
Use Scenario: Protects VBUS line in USB-C receptacles against hot-plug transients and ESD during 20 V PD negotiation. IC Role / Device Role / Timing Role: Unidirectional TVS between VBUS and GND, sized to handle 400 W pulses without thermal runaway. Use Value: Maintains 45 V standoff while clamping to 72.7 V - sufficient margin below 80 V USB PD 3.1 EPR switch FET ratings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ45A-M3/5A | Halogen-free, RoHS-compliant variant with identical electrical specs and SMA package. | No functional difference; selected when halogen-free material compliance is mandated in final assembly. | Direct drop-in replacement for SMAJ45A-E3/5A where environmental specifications require halogen-free construction. |
| SMAJ43A-E3/5A | Lower VWM (43 V), VBR (47.8–52.8 V), and VC (69.4 V at 5.8 A); same 400 W rating. | Better suited for 42 V nominal systems requiring tighter clamping margin; slightly higher leakage at 43 V vs. 45 V. | Select when system nominal voltage is ≤43 V and lower clamping voltage is prioritized over margin to 45 V rail. |
Compared with SMAJ45A-E3/5A, the SMAJ45A-M3/5A offers identical protection performance with halogen-free materials, while SMAJ43A-E3/5A trades 2 V lower standoff for 3.3 V lower clamping - enabling tighter voltage margins in 42 V automotive subsystems.
Availability
SMAJ45A-E3/5A is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface design, and telecom DC input protection requiring stable component supply across long production lifecycles.
Supply support for SMAJ45A-E3/5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and automotive-grade qualification.
The SMAJ series was developed for high-energy transient suppression in space-constrained, high-reliability applications - particularly targeting 12 V to 48 V automotive, industrial, and telecom power rails where fast clamping and repeatable surge endurance are critical.
FAQ
What is the maximum clamping voltage of the SMAJ45A-E3/5A under standard test conditions?
The SMAJ45A-E3/5A has a maximum clamping voltage (VC) of 72.7 V when subjected to a 10/1000 μs waveform at IPPM = 5.5 A. This value is measured per JEDEC standards and reflects worst-case voltage seen by downstream components during surge events. The SMAJ45A-E3/5A maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C), making it suitable for under-hood automotive use.
Is the SMAJ45A-E3/5A RoHS-compliant and lead-free?
Yes, the SMAJ45A-E3/5A is RoHS-compliant and lead-free, as confirmed by the "E3" suffix per Vishay's ordering nomenclature. It meets JESD 201 Class 2 whisker resistance requirements and uses matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. The SMAJ45A-E3/5A does not contain lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE, and complies with EU Directive 2011/65/EU.
Can the SMAJ45A-E3/5A be used in bidirectional applications?
No - the SMAJ45A-E3/5A is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional operation, the SMAJ45CA variant must be used. Using SMAJ45A-E3/5A in reverse-biased AC or floating signal paths will result in forward conduction and potential failure. The SMAJ45A-E3/5A is intended exclusively for DC rail protection where polarity is fixed and known.
What is the thermal resistance and how does it affect PCB layout for the SMAJ45A-E3/5A?
The SMAJ45A-E3/5A has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To achieve rated 400 W pulse power, the PCB must provide adequate copper area and thermal vias; reducing pad size increases RθJA and lowers sustainable surge energy. The SMAJ45A-E3/5A's RθJL = 30 °C/W indicates efficient heat transfer to leads, supporting short-duration pulse handling even with modest board copper.
Does the SMAJ45A-E3/5A meet AEC-Q101 qualification?
The SMAJ45A-E3/5A itself is commercial-grade and not AEC-Q101 qualified; however, the functionally identical SMAJ45AHE3 variant (with HE3 suffix) is fully AEC-Q101 qualified for automotive applications. Both share the same die, package, and electrical characteristics - only the test documentation and traceability differ. For production automotive designs requiring qualification evidence, specify SMAJ45AHE3_X (e.g., SMAJ45AHE3_A) instead of SMAJ45A-E3/5A.
SMAJ45A-E3/5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 45V
- Voltage - Breakdown (Min):
- 50V
- Voltage - Clamping (Max) @ Ipp:
- 72.7V
- Current - Peak Pulse (10/1000µs):
- 5.5A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ45A-E3/5A FAQ
1.How can I place an order for SMAJ45A-E3/5A through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ45A-E3/5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ45A-E3/5A reliable?
The price and inventory of SMAJ45A-E3/5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ45A-E3/5A is usually 5 days.
3.What payment methods are accepted for SMAJ45A-E3/5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ45A-E3/5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ45A-E3/5A?
SMAJ45A-E3/5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ45A-E3/5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ45A-E3/5A?
For technical support, including SMAJ45A-E3/5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ45A-E3/5A requirements.
6.How does Aetrix verify that SMAJ45A-E3/5A is sourced from the original manufacturer or authorized distributors?
All SMAJ45A-E3/5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ45A-E3/5A meets industry standards.
7.What is the process for return or replacement of SMAJ45A-E3/5A?
All SMAJ45A-E3/5A units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ45A-E3/5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ45A-E3/5A part is unused and in its original packaging.
Return procedure for SMAJ45A-E3/5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ45A-E3/5A Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
