Vishay General Semiconductor - Diodes Division SMAJ51HE3/61
- Part No.:
- SMAJ51HE3/61
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ51HE3/61.pdf
- Description:
- TVS DIODE 51VWM 91.1VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:5,587
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ51HE3/61 from Vishay General Semiconductor is a high-reliability, AEC-Q101-qualified unidirectional transient voltage suppressor (TVS) in DO-214AC (SMA) package, designed to protect sensitive electronics against inductive switching transients and lightning-induced surges. It features a 51 V stand-off voltage (VWM), 91.1 V maximum clamping voltage (VC) at 4.4 A peak pulse current (IPPM), and 400 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMAJ51HE3/61 datasheet, SMAJ51HE3/61 pinout, SMAJ51HE3/61 application, or SMAJ51HE3/61 equivalent, this device is selected for automotive-grade surge protection where stable clamping performance, low leakage (<1 µA at VWM), and MSL Level 1 reliability are required in compact surface-mount designs.
Technical Context
This TVS diode operates as a unidirectional clamp, conducting only when reverse voltage exceeds its breakdown threshold (56.7–69.3 V at 1 mA test current). Its glass-passivated junction ensures fast response time (<1 ns) and low incremental surge resistance, enabling effective suppression of sub-microsecond transients on power rails and signal lines.
The device is rated for continuous operation from −55 °C to +150 °C junction temperature, with thermal resistance of 120 °C/W (junction-to-ambient) and 30 °C/W (junction-to-lead), supporting robust thermal management on standard 0.2 × 0.2" copper pads. It meets RoHS 2002/95/EC and is qualified to AEC-Q101 for automotive underhood and infotainment applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working margin. |
| VC @ IPPM | 91.1 V - Clamped voltage during 4.4 A 10/1000 µs surge; determines protected circuit's maximum transient exposure. |
| PPPM | 400 W - Peak pulse power handling capability; supports single-event surge immunity per ISO 7637-2 Pulse 1/2a/5a. |
| IFSM | 40 A - Non-repetitive forward surge rating (8.3 ms half-sine); validates robustness against load dump events. |
| TJ max. | +150 °C - Maximum junction temperature; enables use in under-hood automotive environments without derating. |
| Leakage @ VWM | <1 µA - Ultra-low reverse leakage ensures minimal standby power loss in battery-critical systems. |
| Package | DO-214AC (SMA) - Industry-standard surface-mount outline; compatible with automated placement and reflow (260 °C, 40 s). |
Pinout & Package
DO-214AC (SMA) package: molded plastic case with matte tin-plated leads, cathode band marking on one end. Mounting requires 0.2 × 0.2" (5.0 × 5.0 mm) copper pads per terminal for full 400 W rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path) in unidirectional configuration. |
| Cathode (banded end) | Reverse-biased clamping terminal | Connected to protected line (e.g., 12 V rail or CAN-H); conducts when transient exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive underhood use including temperature cycling, humidity, and mechanical shock per JESD22 standards. |
| Glass-passivated junction | Ensures stable VBR and low leakage over lifetime; eliminates risk of metallization migration under surge stress. |
| MSL Level 1 rating | Allows unlimited floor life and standard reflow without baking; simplifies SMT manufacturing flow. |
| Low clamping ratio (VC/VWM = 1.79) | Minimizes overvoltage stress on downstream ICs compared to higher-ratio TVS devices. |
| JESD201 Class 2 whisker resistance | Prevents tin whisker growth in high-reliability automotive modules operating >10 years. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V supply lines in engine control units (ECUs) against load dump and alternator transients per ISO 7637-2. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between battery rail and point-of-load regulator input. Use Value: Limits transient voltage to ≤91.1 V, preventing damage to 36 V-rated LDOs and microcontrollers while surviving 40 A surge events. |
Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) in factory automation PLC modules from ESD and cable discharge. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at connector entry point to shunt fast transients before reaching ADC front-end. Use Value: Sub-1 µA leakage avoids signal offset errors; 91.1 V clamping preserves 24 V sensor compliance margins during 1 kV EFT bursts. |
| Telecom DC Power Input Protection | Consumer Device USB Port Protection |
Use Scenario: Safeguarding 48 V DC input of PoE-powered network switches against induced surges from nearby AC wiring. IC Role / Device Role / Timing Role: Primary-level TVS on main DC bus upstream of DC-DC converters and hot-swap controllers. Use Value: 400 W rating handles multi-kV lightning-induced surges; DO-214AC footprint allows dense layout near input connectors. |
Use Scenario: Adding secondary-level surge immunity to USB Type-A ports in smart home hubs exposed to user-handling ESD. IC Role / Device Role / Timing Role: Unidirectional clamp on VBUS line referenced to system ground, coordinated with primary ESD diodes. Use Value: 51 V VWM avoids false triggering during 5.25 V USB spec tolerance; <1 µA leakage prevents battery drain in portable modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51AHE3/61 | Lower breakdown range (56.7–62.7 V vs. 56.7–69.3 V); tighter VBR tolerance. | Better suited for precision clamping where consistent turn-on is critical; slightly reduced surge margin above VWM. | Select SMAJ51AHE3/61 when design requires tighter VBR matching across temperature and lot variance. |
| SMCJ51HE3/61 | Same VWM/VC but higher PPPM (1500 W) and larger DO-214AB (SMC) package. | Used where higher energy absorption is needed (e.g., heavy-duty industrial motor drives); requires PCB area increase. | Choose SMCJ51HE3/61 only if surge threat level exceeds 400 W; otherwise SMAJ51HE3/61 offers optimal size/power balance. |
Compared with SMAJ51AHE3/61, the SMAJ51HE3/61 provides broader breakdown voltage coverage for relaxed board-level tolerance stacking, while versus SMCJ51HE3/61 it delivers identical clamping performance in 40 % less PCB area-critical for space-constrained automotive modules.
Availability
SMAJ51HE3/61 is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom power supplies, and consumer USB power delivery systems requiring stable component supply with AEC-Q101 traceability and long-term lifecycle support.
Supply support for SMAJ51HE3/61 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in power management, protection, and sensing components with emphasis on automotive, industrial, and computing markets.
The SMAJ series was engineered specifically for high-reliability transient suppression in harsh environments, combining AEC-Q101 qualification, glass-passivated junctions, and standardized DO-214AC packaging for seamless integration into automotive and industrial power systems.
FAQ
What is the clamping voltage of SMAJ51HE3/61 under a 10/1000 µs surge?
The SMAJ51HE3/61 has a maximum clamping voltage (VC) of 91.1 V at 4.4 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured per Fig. 1 and Fig. 3 of Vishay document 88390 and defines the upper voltage limit imposed on protected circuits during standardized surge events. The SMAJ51HE3/61 maintains this clamping performance across its full operating temperature range.
Is SMAJ51HE3/61 suitable for automotive applications?
Yes, SMAJ51HE3/61 is AEC-Q101 qualified and designated as high-reliability/automotive grade (HE3 suffix). It undergoes extended stress testing including temperature cycling, high-temperature reverse bias, and mechanical shock per JESD22 standards. The SMAJ51HE3/61 is explicitly recommended for under-hood and infotainment systems where sustained operation up to +150 °C and immunity to load dump transients are required.
What does the "HE3" suffix indicate in SMAJ51HE3/61?
The "HE3" suffix in SMAJ51HE3/61 denotes RoHS-compliant, high-reliability/automotive grade construction meeting AEC-Q101 requirements. It specifies matte tin-plated leads compliant with J-STD-002 and JESD22-B102, plus JESD201 Class 2 whisker resistance. This distinguishes SMAJ51HE3/61 from commercial-grade "E3" variants and confirms its suitability for mission-critical automotive deployments.
How does SMAJ51HE3/61 differ from SMAJ51AHE3/61?
SMAJ51HE3/61 has a wider breakdown voltage range (56.7–69.3 V) than SMAJ51AHE3/61 (56.7–62.7 V), resulting in greater unit-to-unit VBR variation but improved robustness against marginal overvoltage conditions. Both share identical VWM (51 V), VC (91.1 V), and PPPM (400 W). The SMAJ51HE3/61 is preferred when board-level tolerances demand broader clamping onset latitude.
What is the maximum reverse leakage current for SMAJ51HE3/61 at rated VWM?
The SMAJ51HE3/61 exhibits a maximum reverse leakage current (ID) of 1 µA at its 51 V stand-off voltage (VWM) and 25 °C ambient temperature. This ultra-low leakage is confirmed in Table 1 of Vishay document 88390 and remains below 5 µA across the full −55 °C to +125 °C operating range, ensuring minimal impact on battery-powered or high-impedance sensor circuits.
SMAJ51HE3/61 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 91.1V
- Current - Peak Pulse (10/1000µs):
- 4.4A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ51HE3/61 FAQ
1.How can I place an order for SMAJ51HE3/61 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ51HE3/61 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ51HE3/61 reliable?
The price and inventory of SMAJ51HE3/61 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ51HE3/61 is usually 5 days.
3.What payment methods are accepted for SMAJ51HE3/61?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ51HE3/61 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ51HE3/61?
SMAJ51HE3/61 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ51HE3/61 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ51HE3/61?
For technical support, including SMAJ51HE3/61 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ51HE3/61 requirements.
6.How does Aetrix verify that SMAJ51HE3/61 is sourced from the original manufacturer or authorized distributors?
All SMAJ51HE3/61 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ51HE3/61 meets industry standards.
7.What is the process for return or replacement of SMAJ51HE3/61?
All SMAJ51HE3/61 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ51HE3/61, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ51HE3/61 part is unused and in its original packaging.
Return procedure for SMAJ51HE3/61:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ51HE3/61 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

