Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMAJ530-E3/61

Part No.:
SMAJ530-E3/61
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixSMAJ530-E3/61.pdf
Description:
TVS DIODE 477VWM 760VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,961

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMAJ530-E3/61 from Vishay General Semiconductor is a unidirectional surface-mount TRANSZORB® transient voltage suppressor (TVS) diode designed for high-voltage surge protection in power and signal lines. It features a 530 V minimum breakdown voltage (VBR), 477 V working peak reverse voltage (VWM), 760 V maximum clamping voltage (VC) at 400 mA, 300 W peak pulse power (10/1000 µs), and operates from −55 °C to +150 °C junction temperature.

For engineers reviewing the SMAJ530-E3/61 datasheet, SMAJ530-E3/61 pinout, SMAJ530-E3/61 application, or SMAJ530-E3/61 equivalent, key selection criteria include clamping performance under 10/1000 µs transients, thermal resistance (RθJA = 120 °C/W), unidirectional polarity, and AEC-Q101 qualification eligibility via HM3 suffix variants.

Technical Context

The SMAJ530-E3/61 uses a glass-passivated silicon junction optimized for fast response to ESD and lightning-induced surges. Its clamping behavior is defined by low incremental surge resistance and a typical 7 V/100 mA slope, with VC measured under standardized 10/1000 µs waveform conditions.

It is rated for non-repetitive peak pulse current up to 40 A (IFSM) and exhibits 1.0 µA max DC reverse leakage at VWM, with a typical junction capacitance of 90 pF at 0 V and 7.5 pF at 200 V - confirming suitability for high-voltage, low-capacitance protection where signal integrity must be preserved.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min)530 V - ensures reliable conduction onset above system operating voltage, preventing false triggering during normal operation
VWM477 V - maximum continuous reverse voltage the device blocks without significant leakage
VC (max)760 V at 400 mA - limits transient voltage seen by downstream ICs or MOSFETs during 10/1000 µs surges
PPPM300 W - peak surge energy handling capability under standard 10/1000 µs waveform
RθJA120 °C/W - defines thermal derating on standard PCB pads; requires careful copper area planning for sustained pulse duty
IFSM40 A - non-repetitive forward surge current rating, critical for inductive switch-off protection
CJ (0 V)90 pF - low junction capacitance minimizes signal distortion on high-speed or RF-adjacent lines

Pinout & Package

Package: SMA (DO-214AC), surface-mount, unidirectional polarity with cathode indicated by color band. Matte tin-plated leads, RoHS-compliant, MSL Level 1 (260 °C peak reflow).

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Transient current sinkConnected to protected line; conducts surge current to ground when VBR exceeded
AnodeReference return pathTypically tied to system ground or low-impedance return plane; completes clamping loop

Key Features

FeatureDesign Value
Glass-passivated junctionEnables stable VBR tolerance and long-term reliability under thermal cycling and humidity stress
MSL Level 1 ratingAllows single-reflow assembly without moisture sensitivity concerns; no baking required before SMT
Low clamping voltage slope~7 V per 100 mA enables predictable voltage limiting across wide current range during surge events
AEC-Q101 qualification optionHM3-suffix variants support automotive-grade deployment in engine control, ADAS, and body electronics

Applications

Industrial Motor DrivesAutomotive Power Distribution

Use Scenario: Protection of IGBT gate drivers and DC-link sensing circuits against switching transients in variable-frequency drives.

IC Role / Device Role / Timing Role: Unidirectional TVS placed across DC-link or gate-to-source to clamp inductive kickback spikes.

Use Value: Limits VC to 760 V, preventing gate oxide rupture in 600 V-class IGBTs while surviving 40 A surge currents.

Use Scenario: Surge suppression on 48 V battery rail inputs in ADAS domain controllers exposed to load-dump and jump-start events.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on main power input, upstream of DC/DC converters and PMICs.

Use Value: Withstands 300 W peak pulses and maintains <1.0 µA leakage at 477 V, ensuring low quiescent power loss in always-on modules.

Telecom Base Station PowerHigh-Voltage Sensor Interfaces

Use Scenario: Input-stage protection for AC/DC front-ends in outdoor telecom cabinets subjected to lightning-induced surges.

IC Role / Device Role / Timing Role: First-line defense on rectified AC input, clamping transients before bulk capacitors and PFC controllers.

Use Value: 530 V VBR aligns with 400 V RMS AC-derived rails; 120 °C/W RθJA supports thermal design with minimal copper area.

Use Scenario: Protection of isolated voltage dividers and ADC front-ends measuring >400 V bus voltages in energy metering systems.

IC Role / Device Role / Timing Role: High-impedance shunt clamp across precision resistive divider to prevent overvoltage damage during fault conditions.

Use Value: 90 pF capacitance avoids loading effects on high-impedance dividers; 760 V VC ensures ADC input stays within ±15 V absolute max rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ550-E3/61Higher VBR (550 V min) and VWM (495 V); same package, power, and clamping (760 V)Better suited for 480 V AC-derived systems or higher-voltage DC rails where 477 V VWM is marginalSelect SMAJ550-E3/61 when system nominal voltage exceeds 450 V DC or requires tighter margin above VWM
1.5SMC530ASame VBR/VWM but in larger SMC (DO-214AB) package; higher PPPM (1500 W), higher RθJA (~65 °C/W)Used where higher single-pulse energy absorption is needed, but board space allows larger footprintChoose 1.5SMC530A only if 300 W is insufficient and thermal management permits larger thermal mass

Compared with SMAJ550-E3/61 and 1.5SMC530A, the SMAJ530-E3/61 offers optimal balance of compact SMA footprint, precise 477 V standoff, and verified 300 W surge capacity - making it preferred for space-constrained, high-voltage industrial and telecom power stages where exact VWM margin is critical.

Availability

SMAJ530-E3/61 is available at Aetrix Electronics and suitable for industrial motor drives, automotive power distribution, and telecom base station power requiring stable component supply and consistent surge performance across production batches.

Supply support for SMAJ530-E3/61 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SMAJ series was developed for high-voltage transient suppression in compact surface-mount formats, targeting robustness in harsh environments including automotive, industrial, and infrastructure applications.

FAQ

What is the minimum breakdown voltage specification for SMAJ530-E3/61?

The SMAJ530-E3/61 has a guaranteed minimum breakdown voltage (VBR) of 530 V at 100 μA test current, per Vishay Document Number 88391. This value is measured under controlled conditions and defines the lowest voltage at which the device begins avalanche conduction - critical for ensuring it remains non-conductive during normal 477 V system operation while reliably triggering during overvoltage events.

Is SMAJ530-E3/61 suitable for automotive applications?

The base SMAJ530-E3/61 is not AEC-Q101 qualified; however, the variant SMAJ530HM3_B/H is AEC-Q101 qualified and shares identical electrical characteristics. For automotive use, specify the HM3-suffix part number - the "HM3" denotes halogen-free, RoHS-compliant, and AEC-Q101 qualified construction, validated for engine bay and chassis-mounted electronics per stress test requirements.

What is the clamping voltage of SMAJ530-E3/61 under standard surge conditions?

The SMAJ530-E3/61 has a maximum clamping voltage (VC) of 760 V when subjected to a 400 mA, 10/1000 μs waveform - the industry-standard surge test profile. This value represents the peak voltage that will appear across the protected circuit during such an event, directly determining whether downstream components like MOSFETs or controllers remain within safe operating limits.

Does SMAJ530-E3/61 have bidirectional polarity?

No, SMAJ530-E3/61 is unidirectional only, as explicitly stated in the Vishay datasheet. It functions as a reverse-biased avalanche diode, conducting only when cathode voltage exceeds anode by ≥530 V. For bidirectional protection, separate devices or dedicated bidirectional TVS families (e.g., SMBJ series) must be used - SMAJ530-E3/61 cannot substitute in AC-coupled or symmetrical surge scenarios.

What is the thermal resistance junction-to-ambient for SMAJ530-E3/61?

The typical thermal resistance junction-to-ambient (RθJA) for SMAJ530-E3/61 is 120 °C/W, measured on a standard 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad per terminal. This value assumes minimal PCB copper; actual thermal performance improves significantly with added thermal relief or internal ground planes, and must be factored into derating calculations for repetitive surge conditions.

SMAJ530-E3/61 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
477V
Voltage - Breakdown (Min):
530V
Voltage - Clamping (Max) @ Ipp:
760V
Current - Peak Pulse (10/1000µs):
400mA
Power - Peak Pulse:
300W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
90pF @ 1MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

SMAJ530-E3/61 FAQ

1.How can I place an order for SMAJ530-E3/61 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMAJ530-E3/61 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMAJ530-E3/61 reliable?

The price and inventory of SMAJ530-E3/61 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ530-E3/61 is usually 5 days.

3.What payment methods are accepted for SMAJ530-E3/61?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ530-E3/61 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMAJ530-E3/61?

SMAJ530-E3/61 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMAJ530-E3/61 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMAJ530-E3/61?

For technical support, including SMAJ530-E3/61 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ530-E3/61 requirements.

6.How does Aetrix verify that SMAJ530-E3/61 is sourced from the original manufacturer or authorized distributors?

All SMAJ530-E3/61 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ530-E3/61 meets industry standards.

7.What is the process for return or replacement of SMAJ530-E3/61?

All SMAJ530-E3/61 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ530-E3/61, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMAJ530-E3/61 part is unused and in its original packaging.

Return procedure for SMAJ530-E3/61:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMAJ530-E3/61 Tags

  • SMAJ530-E3/61
  • SMAJ530-E3/61 PDF
  • SMAJ530-E3/61 Datasheet
  • SMAJ530-E3/61 Specifications
  • SMAJ530-E3/61 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMAJ530-E3/61
  • Buy SMAJ530-E3/61
  • SMAJ530-E3/61 Price
  • SMAJ530-E3/61 Distributor
  • SMAJ530-E3/61 Supplier
  • SMAJ530-E3/61 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER