Vishay General Semiconductor - Diodes Division SMAJ530HE3_A/H

Overview

SMAJ530HE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount TRANSZORB® transient voltage suppressor (TVS) diode designed for high-voltage surge protection in power rails and signal lines. It features a 530 V minimum breakdown voltage (V_BR), 477 V working peak reverse voltage (V_WM), 760 V maximum clamping voltage (V_C) at 400 mA, 300 W peak pulse power (10/1000 µs), and operates from –55 °C to +150 °C. It is used to protect MOSFETs, IGBTs, and sensor interfaces in industrial motor drives and telecom power supplies.

For engineers reviewing the SMAJ530HE3_A/H datasheet, SMAJ530HE3_A/H pinout, SMAJ530HE3_A/H application, or SMAJ530HE3_A/H equivalent, key selection criteria include clamping performance under 400 mA surge, thermal resistance (R_θJL = 30 °C/W), unidirectional polarity, AEC-Q101 qualification status, and DO-214AC (SMA) package compatibility with standard PCB pad layouts.

Technical Context

The SMAJ530HE3_A/H employs a glass-passivated silicon junction optimized for fast response (<1 ps) to ESD and lightning-induced transients. Its clamping behavior follows a low incremental surge resistance profile, with V_C tightly specified at 760 V under standardized 10/1000 µs waveform testing.

It is rated for non-repetitive peak pulse current up to 40 A (I_FSM), supports operation up to 150 °C junction temperature, and exhibits 1.0 µA max reverse leakage at V_WM, enabling reliable hold-off in high-impedance sensing circuits without DC loading.

Key Specifications

Pinout & Package

Package: SMA (DO-214AC), surface-mount, unidirectional polarity with cathode band marking. Matte tin-plated leads, RoHS-compliant, halogen-free, MSL Level 1 (260 °C peak reflow).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMAJ530HE3_A/H, SMAJ530A-M3/61 offers identical electrical specs without automotive qualification, while SMCJ530A delivers 5× higher pulse power in a physically larger package-enabling trade-offs between board density, qualification requirements, and surge energy handling.

Availability

SMAJ530HE3_A/H is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, automotive on-board chargers, and high-voltage sensor interfaces requiring stable component supply and traceable sourcing.

Supply support for SMAJ530HE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, thermal performance, and industry-standard qualification.

The SMAJ series is engineered for high-voltage transient suppression in demanding power electronics, targeting applications where precise clamping, low leakage, and compact DO-214AC packaging are essential.

FAQ

What is the maximum clamping voltage of the SMAJ530HE3_A/H under standard test conditions?

The SMAJ530HE3_A/H has a maximum clamping voltage (V_C) of 760 V when subjected to a 400 mA, 10/1000 µs surge waveform. This value is measured per JEDEC standards and reflects the peak voltage seen by protected circuitry during transient events. The SMAJ530HE3_A/H maintains this clamping performance across its full operating temperature range, supporting robust design in high-temperature environments such as power converters and EV charging systems.

Is the SMAJ530HE3_A/H AEC-Q101 qualified?

Yes, the SMAJ530HE3_A/H is an AEC-Q101 qualified part. Its ordering code suffix "HM3" indicates automotive-grade qualification, and the "_B/H" revision denotes compliance with stress testing including temperature cycling, HTRB, and ESD per AEC-Q101. This makes the SMAJ530HE3_A/H suitable for use in automotive on-board chargers, DC-DC converters, and other safety-critical power systems where component reliability is mandated.

What is the package type and mounting specification for SMAJ530HE3_A/H?

The SMAJ530HE3_A/H uses the SMA (DO-214AC) surface-mount package with matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. It meets MSL Level 1 per J-STD-020, allowing unlimited floor life and peak reflow temperatures up to 260 °C. The recommended PCB pad layout is defined in the Vishay datasheet (Document Number 88391), specifying 0.2" × 0.2" copper pads for optimal thermal dissipation and mechanical reliability.

How does the SMAJ530HE3_A/H compare to SMAJ550 variants in terms of voltage ratings?

The SMAJ530HE3_A/H has a minimum breakdown voltage (V_BR) of 530 V and a working peak reverse voltage (V_WM) of 477 V, whereas SMAJ550 variants specify 550 V V_BR min and 495 V V_WM. This 20 V difference defines their respective system voltage margins: SMAJ530HE3_A/H is selected for 400–450 V DC bus protection, while SMAJ550 suits 450–500 V applications. Both share identical P_PPM, V_C, and package, enabling drop-in substitution only when voltage margin permits.

What is the typical junction-to-ambient thermal resistance (R_θJA) for SMAJ530HE3_A/H?

The typical junction-to-ambient thermal resistance (R_θJA) for SMAJ530HE3_A/H is 120 °C/W when mounted on the minimum recommended PCB pad layout per JEDEC standards. This value assumes no additional heatsinking and is critical for estimating junction temperature rise under steady-state power dissipation (P_D = 2.5 W). For high-reliability designs, thermal modeling should incorporate R_θJL = 30 °C/W and actual copper area to ensure T_J remains below 150 °C.