Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMAJ550HM3_B/H

Part No.:
SMAJ550HM3_B/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixSMAJ550HM3_B/H.pdf
Description:
TVS DIODE 495VWM 760VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,764

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMAJ550HM3_B/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, rated for 550 V breakdown voltage (VBR), 495 V working voltage (VWM), 760 V clamping voltage at 400 mA, 300 W peak pulse power (10/1000 µs), and AEC-Q101 qualified for automotive use - deployed to protect MOSFETs and sensor signal lines against inductive switching transients.

For engineers reviewing the SMAJ550HM3_B/H datasheet, SMAJ550HM3_B/H pinout, SMAJ550HM3_B/H application, or SMAJ550HM3_B/H equivalent, key selection criteria include verified unidirectional polarity, clamping performance under 400 mA 10/1000 µs surge, thermal resistance (RθJL = 30 °C/W), AEC-Q101 qualification status, and compatibility with standard SMA PCB pad layouts per J-STD-020 MSL level 1.

Technical Context

This TVS diode operates exclusively in unidirectional mode, with cathode marked by a band and designed for reverse-biased transient clamping. Its 550 V VBR (min) and 495 V VWM enable robust standoff in high-voltage DC rails, while the 760 V VC at 400 mA ensures predictable overvoltage limiting during ESD or load-dump events.

Thermal design relies on RθJL = 30 °C/W and RθJA = 120 °C/W (on minimum pad layout), supporting operation up to TJ = 150 °C. The device exhibits 90 pF capacitance at 0 V and 7.5 pF at 200 V, making it suitable for moderate-speed signal line protection without excessive loading.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min)550 V - Ensures reliable triggering above 495 V operating rail without false conduction
VWM495 V - Maximum continuous reverse voltage before leakage exceeds 1.0 μA
VC @ 400 mA760 V - Clamped voltage during 10/1000 µs surge, defining worst-case stress on downstream ICs
PPPM300 W - Peak pulse power handling capability under standardized surge waveform
IFSM40 A - Non-repetitive forward surge current rating, critical for inductive kickback absorption
TJ max150 °C - Junction temperature limit dictating thermal derating above 25 °C ambient
CJ @ 0 V90 pF - Capacitance level affecting high-frequency signal integrity on protected lines

Pinout & Package

Package: SMA (DO-214AC), surface-mount, halogen-free, RoHS-compliant, AEC-Q101 qualified. Cathode indicated by molded band; leads matte tin-plated, solderable per J-STD-002.

Pin/TerminalCircuit RoleDesign Meaning
AnodeTransient current return pathConnected to system ground or low-impedance return during clamping event
CathodeProtected line connection pointConnected to line being protected (e.g., MOSFET drain or sensor supply); marked by color band

Key Features

FeatureDesign Value
Glass passivated junctionEnables stable VBR and low leakage (<1.0 μA at VWM) across temperature and lifetime
AEC-Q101 qualificationValidated reliability for automotive powertrain and body electronics under stress conditions
MSL Level 1 (260 °C peak)Compatible with standard lead-free reflow profiles without preconditioning
Low incremental surge resistanceSupports fast, consistent clamping response with minimal VC overshoot during fast-rising transients
Unidirectional polarity onlyOptimized for DC-biased protection where reverse conduction is not required

Applications

Automotive Power Supply ProtectionIndustrial Motor Drive Gate Protection

Use Scenario: Protecting 48 V battery-fed ECUs from load-dump transients up to 100 V surge superimposed on nominal rail.

IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between power input and ground, triggered only during overvoltage events.

Use Value: Limits transient voltage to ≤760 V, preventing damage to downstream DC-DC controllers rated for 600 V absolute maximum.

Use Scenario: Shielding IGBT gate drivers from Miller-induced spikes during high-di/dt switching in servo inverters.

IC Role / Device Role / Timing Role: Fast-response clamping element across gate-to-source, absorbing sub-100 ns spikes.

Use Value: 90 pF capacitance at 0 V avoids signal distortion, while 300 W PPPM handles repetitive switching surges without degradation.

Telecom Line Interface ProtectionConsumer Sensor Signal Line Protection

Use Scenario: Safeguarding RS-485 transceivers connected to outdoor cabling exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: Primary-level TVS on differential bus lines, coordinated with secondary GDT or polymer suppressors.

Use Value: 760 V clamping voltage aligns with IEC 61000-4-5 Level 4 (4 kV) test requirements when used with series impedance.

Use Scenario: Securing analog output of automotive cabin temperature sensors against ESD and board-level coupling.

IC Role / Device Role / Timing Role: Point-of-entry protection on 5 V or 3.3 V analog supply or output lines.

Use Value: 1.0 μA max reverse leakage at 495 V ensures no measurable error injection into precision ADC reference paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ550A-M3/61Industrial-grade (non-AEC-Q101), same VBR/VWM/VC, identical SMA packageLacks automotive qualification; unsuitable for TIER-1 production in engine control modulesSelect when AEC-Q101 is not mandated and cost sensitivity is higher
SMCJ550A-HM3Same VBR/VWM, but SMC (DO-214AB) package - larger footprint, higher PPPM (1500 W)Requires PCB redesign; suited for higher-energy surge environments like alternator regulation circuitsChoose when 300 W is insufficient and layout allows SMC footprint

Compared with SMAJ550HM3_B/H, SMAJ550A-M3/61 offers identical electrical specs without automotive qualification, while SMCJ550A-HM3 delivers higher surge capacity in a physically larger package - neither is pin-compatible, and both require explicit validation for thermal and layout integration.

Availability

SMAJ550HM3_B/H is available at Aetrix Electronics and suitable for automotive power distribution, industrial motor drives, telecom interface protection, and consumer sensor systems requiring stable component supply with full traceability and AEC-Q101 compliance.

Supply support for SMAJ550HM3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, thermal performance, and automotive-grade qualification.

The SMAJ series is engineered specifically for high-voltage transient suppression in space-constrained, thermally demanding applications - targeting automotive subsystems, industrial controls, and infrastructure equipment where AEC-Q101 compliance and repeatable clamping behavior are mandatory.

FAQ

What is the clamping voltage of SMAJ550HM3_B/H and under what test condition is it specified?

The SMAJ550HM3_B/H has a maximum clamping voltage (VC) of 760 V, measured at 400 mA peak pulse current using the standardized 10/1000 µs double-exponential waveform. This value defines the upper voltage limit imposed on protected circuitry during transient events and is validated per JEDEC standards. The SMAJ550HM3_B/H maintains this clamping performance across its qualified operating temperature range.

Is SMAJ550HM3_B/H suitable for automotive applications, and what qualification does it hold?

Yes, SMAJ550HM3_B/H is explicitly AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HM3" and documentation revision 09-Jan-2024. It meets stress testing requirements for temperature cycling, humidity bias, and mechanical shock applicable to automotive powertrain and body electronics. The SMAJ550HM3_B/H is intended for production use in Tier-1 and Tier-2 automotive systems where long-term reliability under harsh conditions is required.

What is the package type and mounting specification for SMAJ550HM3_B/H?

SMAJ550HM3_B/H uses the SMA (DO-214AC) surface-mount package with matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. It is rated MSL Level 1 (260 °C peak reflow), requires no moisture preconditioning, and mounts on 0.2" × 0.2" copper pads per terminal for thermal performance. The cathode is marked by a visible band, and polarity must be observed during placement to ensure correct unidirectional clamping function.

How does the thermal resistance of SMAJ550HM3_B/H affect its power handling capability?

SMAJ550HM3_B/H has a typical junction-to-lead thermal resistance (RθJL) of 30 °C/W and junction-to-ambient (RθJA) of 120 °C/W on minimum recommended pads. These values directly determine safe operating area: at 25 °C ambient, the 2.5 W steady-state power dissipation (PD) is limited by RθJA, while pulsed operation leverages RθJL for short-duration energy absorption. Derating curves in the datasheet must be applied above 25 °C to maintain TJ ≤ 150 °C.

What is the capacitance profile of SMAJ550HM3_B/H, and how does it impact signal line protection?

SMAJ550HM3_B/H exhibits 90 pF capacitance at 0 V bias and drops to 7.5 pF at 200 V, reflecting its voltage-dependent junction behavior. This low, bias-sensitive capacitance minimizes loading on high-impedance analog or digital signal lines - such as sensor outputs or communication buses - preserving signal rise/fall times and reducing crosstalk risk. For SMAJ550HM3_B/H, this makes it appropriate for protecting lines up to ~10 MHz without significant bandwidth degradation.

SMAJ550HM3_B/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
495V
Voltage - Breakdown (Min):
550V
Voltage - Clamping (Max) @ Ipp:
760V
Current - Peak Pulse (10/1000µs):
400mA
Power - Peak Pulse:
300W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

SMAJ550HM3_B/H FAQ

1.How can I place an order for SMAJ550HM3_B/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMAJ550HM3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMAJ550HM3_B/H reliable?

The price and inventory of SMAJ550HM3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ550HM3_B/H is usually 5 days.

3.What payment methods are accepted for SMAJ550HM3_B/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ550HM3_B/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMAJ550HM3_B/H?

SMAJ550HM3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMAJ550HM3_B/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMAJ550HM3_B/H?

For technical support, including SMAJ550HM3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ550HM3_B/H requirements.

6.How does Aetrix verify that SMAJ550HM3_B/H is sourced from the original manufacturer or authorized distributors?

All SMAJ550HM3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ550HM3_B/H meets industry standards.

7.What is the process for return or replacement of SMAJ550HM3_B/H?

All SMAJ550HM3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ550HM3_B/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMAJ550HM3_B/H part is unused and in its original packaging.

Return procedure for SMAJ550HM3_B/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMAJ550HM3_B/H Tags

  • SMAJ550HM3_B/H
  • SMAJ550HM3_B/H PDF
  • SMAJ550HM3_B/H Datasheet
  • SMAJ550HM3_B/H Specifications
  • SMAJ550HM3_B/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMAJ550HM3_B/H
  • Buy SMAJ550HM3_B/H
  • SMAJ550HM3_B/H Price
  • SMAJ550HM3_B/H Distributor
  • SMAJ550HM3_B/H Supplier
  • SMAJ550HM3_B/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER