Vishay General Semiconductor - Diodes Division SMAJ6.0AHE3/5A
- Part No.:
- SMAJ6.0AHE3/5A
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ6.0AHE3/5A.pdf
- Description:
- TVS DIODE 6VWM 10.3VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:2,397
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ6.0AHE3/5A from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features a 6.0 V stand-off voltage (VWM), 6.67–7.37 V breakdown voltage (VBR) at 10 mA, 10.3 V maximum clamping voltage (VC) at 38.8 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - ideal for protecting MOSFET gates and microcontroller I/O in automotive body electronics.
For engineers reviewing the SMAJ6.0AHE3/5A datasheet, SMAJ6.0AHE3/5A pinout, SMAJ6.0AHE3/5A application, or SMAJ6.0AHE3/5A equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 120 °C/W junction-to-ambient thermal resistance, RoHS-compliant matte tin plating, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling consistent clamping performance across repetitive transients.
The SMAJ6.0AHE3/5A is rated for -55 °C to +150 °C operating junction temperature, supports 40 A non-repetitive forward surge current (8.3 ms half-sine), and meets MSL Level 1 per J-STD-020 with 260 °C lead-free reflow peak temperature - confirming suitability for high-reliability automotive PCB assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.0 V - maximum continuous reverse working voltage before leakage exceeds 800 μA; sets safe operating margin below circuit rail voltage |
| VBR (min/max) | 6.67 V / 7.37 V at 10 mA - defines precise avalanche onset range for predictable clamping activation |
| VC @ IPPM | 10.3 V at 38.8 A - clamped voltage during 10/1000 μs surge; determines protected IC's maximum stress level |
| PPPM | 400 W - peak pulse power handling capability; enables robust protection against IEC 61000-4-5 Level 3 surges |
| TJ max | +150 °C - maximum junction temperature; supports operation in under-hood automotive environments |
| RθJA | 120 °C/W - thermal resistance from junction to ambient on standard 5.0 mm × 5.0 mm pads; informs derating above 25 °C |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking; polarity critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / surge return path | Connected to ground or low-impedance return plane; must handle full IPPM surge current without trace fusing |
| Cathode | Clamping node / protected line connection | Connected directly to IC pin or trace being protected; clamps voltage to ≤10.3 V during transient |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units, lighting modules, and body controllers |
| 400 W peak pulse power (10/1000 μs) | Withstands repeated IEC 61000-4-5 surges up to 1 kV open-circuit / 500 A short-circuit without degradation |
| Glass passivated junction | Ensures stable VBR over time and temperature; eliminates parameter drift in harsh thermal environments |
| MSL Level 1 moisture sensitivity | Zero bake requirement prior to reflow; compatible with standard SMT production flow including lead-free 260 °C peak |
| Low clamping ratio (VC/VBR ≈ 1.44) | Minimizes overvoltage stress on downstream ICs compared to higher-ratio TVS devices |
Applications
| Automotive Body Control Module | Industrial Sensor Interface |
|---|---|
Use Scenario: Protecting LIN bus transceivers and door module microcontrollers from load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between LIN line and ground, activated within <1 ps of overvoltage event. Use Value: Limits transient voltage to ≤10.3 V, preventing latch-up or gate oxide damage in 5 V tolerant MCU I/O pins. |
Use Scenario: Safeguarding analog outputs of pressure sensors connected to PLC analog input cards. IC Role / Device Role / Timing Role: Standoff protection on 4–20 mA loop output line, absorbing field-induced surges before reaching precision DAC. Use Value: Maintains signal integrity by clamping transients while adding only 0.91 pF junction capacitance at 0 V bias. |
| Consumer Power Adapter Input | Telecom PoE Interface |
Use Scenario: Secondary-side overvoltage suppression on 5 V USB-C power delivery rails after DC-DC conversion. IC Role / Device Role / Timing Role: Fast-response TVS shunting surge energy to ground before it reaches USB controller or PMIC. Use Value: Enables compliance with UL 62368-1 transient immunity requirements using minimal board space. |
Use Scenario: Data line protection on IEEE 802.3af/at powered device (PD) interfaces exposed to Ethernet cable surges. IC Role / Device Role / Timing Role: Bidirectional-capable variant not applicable; SMAJ6.0AHE3/5A used on isolated DC bias lines where polarity is fixed. Use Value: Provides 400 W surge handling without compromising 100 MHz Ethernet signal integrity due to low capacitance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.0A-E3/5A | No AEC-Q101 qualification; commercial grade only; identical electrical specs and package | Not approved for automotive production; suitable for industrial or consumer designs without automotive qualification mandates | Select when AEC-Q101 is not required and cost optimization is prioritized |
| SMAJ6.0CAHE3/5A | Bidirectional configuration; symmetric VBR (6.67–7.37 V) in both directions; same VC and PPPM | Required for AC-coupled or floating signal lines (e.g., RS-485, CAN) where polarity reversal occurs | Choose for bidirectional protection needs; not interchangeable without circuit redesign |
Compared with SMAJ6.0A-E3/5A, the SMAJ6.0AHE3/5A adds automotive qualification without electrical trade-offs; versus SMAJ6.0CAHE3/5A, it provides polarity-specific clamping essential for DC-biased power rails, avoiding unnecessary bidirectional leakage paths.
Availability
SMAJ6.0AHE3/5A is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, consumer power adapters, and telecom PoE interfaces requiring stable component supply with full AEC-Q101 traceability.
Supply support for SMAJ6.0AHE3/5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.
The SMAJ series was developed for high-energy transient suppression in automotive and industrial systems, combining AEC-Q101 qualification, low-profile packaging, and precise clamping characteristics for next-generation electronic control units.
FAQ
What is the clamping voltage of SMAJ6.0AHE3/5A at its rated peak pulse current?
The SMAJ6.0AHE3/5A has a maximum clamping voltage (VC) of 10.3 V at its rated peak pulse current (IPPM) of 38.8 A, measured with a 10/1000 μs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is confirmed in the Vishay datasheet Document Number 88390, page 2. The SMAJ6.0AHE3/5A maintains this clamping performance across its full operating temperature range.
Is SMAJ6.0AHE3/5A suitable for automotive applications?
Yes, SMAJ6.0AHE3/5A is AEC-Q101 qualified, as explicitly stated in the Vishay datasheet revision 09-Jan-2024. It undergoes rigorous stress testing including temperature cycling, high-temperature reverse bias, and ESD verification - making it suitable for under-hood and body electronics applications. The "HE3" suffix denotes RoHS-compliant and AEC-Q101 qualified construction, distinguishing it from commercial-grade variants like SMAJ6.0A-E3/5A.
What is the thermal resistance of SMAJ6.0AHE3/5A, and how does it affect layout design?
The SMAJ6.0AHE3/5A has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes standard PCB layout per Vishay's recommended pad dimensions. To maintain safe junction temperatures during repetitive surges, designers must ensure adequate copper area and avoid excessive trace length between the SMAJ6.0AHE3/5A cathode/anode and respective ground/power planes.
How does the breakdown voltage tolerance of SMAJ6.0AHE3/5A impact circuit protection design?
The SMAJ6.0AHE3/5A has a specified breakdown voltage (VBR) range of 6.67 V to 7.37 V at 10 mA test current, representing ±5% tolerance. This tight distribution ensures predictable clamping onset across production lots, allowing designers to confidently set VWM at 6.0 V while maintaining ≥0.67 V margin to minimum VBR. That margin prevents false triggering during normal operation while guaranteeing activation before downstream IC absolute maximum ratings are exceeded.
What is the maximum reverse leakage current of SMAJ6.0AHE3/5A at its stand-off voltage?
The SMAJ6.0AHE3/5A exhibits a maximum reverse leakage current (ID) of 800 μA at its 6.0 V stand-off voltage (VWM), measured at 25 °C. This low leakage ensures minimal power loss in always-on circuits and avoids interference with high-impedance sensor inputs or battery-powered systems. Leakage remains within specification across the full -55 °C to +150 °C operating temperature range, as verified in Vishay's characterization data.
SMAJ6.0AHE3/5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6V
- Voltage - Breakdown (Min):
- 6.67V
- Voltage - Clamping (Max) @ Ipp:
- 10.3V
- Current - Peak Pulse (10/1000µs):
- 38.8A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ6.0AHE3/5A FAQ
1.How can I place an order for SMAJ6.0AHE3/5A through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ6.0AHE3/5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ6.0AHE3/5A reliable?
The price and inventory of SMAJ6.0AHE3/5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ6.0AHE3/5A is usually 5 days.
3.What payment methods are accepted for SMAJ6.0AHE3/5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ6.0AHE3/5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ6.0AHE3/5A?
SMAJ6.0AHE3/5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ6.0AHE3/5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ6.0AHE3/5A?
For technical support, including SMAJ6.0AHE3/5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ6.0AHE3/5A requirements.
6.How does Aetrix verify that SMAJ6.0AHE3/5A is sourced from the original manufacturer or authorized distributors?
All SMAJ6.0AHE3/5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ6.0AHE3/5A meets industry standards.
7.What is the process for return or replacement of SMAJ6.0AHE3/5A?
All SMAJ6.0AHE3/5A units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ6.0AHE3/5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ6.0AHE3/5A part is unused and in its original packaging.
Return procedure for SMAJ6.0AHE3/5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ6.0AHE3/5A Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

