Vishay General Semiconductor - Diodes Division SMAJ6.0AHE3_A/H

Overview

SMAJ6.0AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features 6.67 V minimum breakdown voltage (V_BR), 6.0 V maximum stand-off voltage (V_WM), 400 W peak pulse power (10/1000 μs), and clamps to ≤10.3 V at 38.8 A peak surge current - deployed in automotive ECUs, industrial sensor interfaces, and DC power rail protection.

For engineers reviewing the SMAJ6.0AHE3_A/H datasheet, SMAJ6.0AHE3_A/H pinout, SMAJ6.0AHE3_A/H application, or SMAJ6.0AHE3_A/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, 120 °C/W junction-to-ambient thermal resistance, and compliance with UL 497B for surge protector classification.

Technical Context

This TVS diode operates as a clamping device in parallel with protected circuitry, entering avalanche conduction when reverse voltage exceeds V_BR. Its glass-passivated junction ensures stable breakdown behavior and low leakage (<800 μA at 6.0 V), while the SMA package supports automated SMT placement and meets MSL Level 1 reflow requirements (260 °C peak).

Rated for -55 °C to +150 °C operating junction temperature, it delivers 40 A non-repetitive forward surge capability (8.3 ms half-sine) and exhibits 0.059 %/°C temperature coefficient of V_BR, enabling predictable clamping across automotive thermal environments.

Key Specifications

Pinout & Package

Package: SMA (DO-214AC), surface-mount, cathode-banded unidirectional configuration. Molded compound meets UL 94 V-0; matte tin-plated leads compliant with J-STD-002 solderability standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMAJ6.0AHE3_A/H, SMAJ6.0A-E3/61 offers identical clamping performance at lower cost but no automotive qualification, while SMCJ6.0AHE3_A/H provides triple the surge power in a physically larger package - requiring trade-offs between reliability assurance, footprint, and energy rating.

Availability

SMAJ6.0AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and 12 V DC power rail protection requiring stable component supply and AEC-Q101 compliance.

Supply support for SMAJ6.0AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on high-reliability and automotive-grade solutions.

The SMAJ series is engineered for robust transient suppression in harsh environments, targeting automotive body electronics, industrial control, and telecom infrastructure where fast response and repeatable clamping are critical.

FAQ

What is the maximum clamping voltage of the SMAJ6.0AHE3_A/H under full-rated surge conditions?

The SMAJ6.0AHE3_A/H has a maximum clamping voltage (V_C) of 10.3 V when subjected to its rated 38.8 A peak pulse current (I_PPM) with a 10/1000 μs waveform. This value is guaranteed per Vishay's datasheet (Document Number: 88390, Rev. 09-Jan-2024) and reflects worst-case performance across temperature and process variation - critical for ensuring downstream ICs remain within absolute maximum ratings during surge events.

Is SMAJ6.0AHE3_A/H qualified to AEC-Q101, and what does that mean for automotive use?

Yes, SMAJ6.0AHE3_A/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation note (page 3). This qualification validates performance across temperature cycling, highly accelerated life testing (HALT), and ESD stress per automotive reliability standards - making SMAJ6.0AHE3_A/H suitable for production deployment in engine control units, ADAS domain controllers, and other safety-relevant vehicle subsystems.

How does the thermal resistance of SMAJ6.0AHE3_A/H affect its derating in real-world PCB layouts?

SMAJ6.0AHE3_A/H has a typical R_θJA of 120 °C/W on standard 0.2" × 0.2" copper pads. In practice, this means a 400 W transient will cause only brief junction heating, but sustained power dissipation must stay below 3.3 W (P_D). For repeated surges, thermal design must ensure average power remains low - verified using Vishay's Fig. 2 derating curve. Layout improvements (larger copper areas, internal planes) reduce R_θJA and improve margin.

Can SMAJ6.0AHE3_A/H be used in bidirectional configurations?

No - SMAJ6.0AHE3_A/H is strictly unidirectional, indicated by the "A" suffix and cathode band marking. Bidirectional variants carry "CA" suffixes (e.g., SMAJ6.0CA). Using SMAJ6.0AHE3_A/H in bidirectional applications would result in forward conduction during one polarity of surge, causing failure. For symmetrical protection, select SMAJ6.0CAHE3_A/H or pair two unidirectional devices back-to-back with appropriate layout isolation.

What is the leakage current specification for SMAJ6.0AHE3_A/H at its rated stand-off voltage?

At V_WM = 6.0 V and T_A = 25 °C, the SMAJ6.0AHE3_A/H exhibits a maximum reverse leakage current (I_D) of 800 μA, per Vishay's electrical characteristics table (page 2). This low leakage ensures minimal power loss in always-on circuits like automotive wake-up lines or battery-backed sensor nodes, while remaining well below thresholds that could falsely trigger monitoring comparators.