Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMAJ6.5AHE3/61

Part No.:
SMAJ6.5AHE3/61
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixSMAJ6.5AHE3/61.pdf
Description:
TVS DIODE 6.5VWM 11.2VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,917

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMAJ6.5AHE3/61 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for robust overvoltage protection of sensitive electronics. It features a 6.5 V stand-off voltage (VWM), 7.22–7.98 V breakdown voltage (VBR) at 10 mA test current, and clamps transients to ≤11.2 V at 35.7 A peak pulse current (IPPM) under 10/1000 μs waveform - ideal for safeguarding power rails and I/O lines in automotive ECUs and industrial sensor interfaces.

For engineers reviewing the SMAJ6.5AHE3/61 datasheet, SMAJ6.5AHE3/61 pinout, SMAJ6.5AHE3/61 application, or SMAJ6.5AHE3/61 equivalent, key selection criteria include its AEC-Q101 qualification, 400 W peak pulse power rating (10/1000 μs), low clamping ratio (VC/VBR ≈ 1.48), and compatibility with automated SMT assembly on standard PCB pad layouts.

Technical Context

This TVS diode operates as a clamping device in parallel with protected circuitry, conducting only when reverse voltage exceeds VBR to divert surge energy away from downstream components. Its glass-passivated junction ensures stable leakage performance (<500 μA at VWM) and fast response time (<1.0 ps), critical for suppressing ESD and inductive switching spikes.

The SMAJ6.5AHE3/61 is rated for 40 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports continuous power dissipation of 3.3 W at 50 °C ambient, and exhibits a thermal resistance of 120 °C/W (junction-to-ambient) on minimum recommended copper pads - enabling reliable operation in compact, thermally constrained designs.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off Voltage) 6.5 V - maximum continuous reverse operating voltage before significant conduction begins; sets threshold for normal circuit operation without leakage interference.
VBR (Breakdown Voltage) 7.22–7.98 V at 10 mA - guaranteed voltage range where device enters avalanche conduction; defines precise clamping onset point.
VC (Clamping Voltage) ≤11.2 V at IPPM = 35.7 A - maximum voltage seen by protected circuit during 10/1000 μs surge; determines stress level on downstream ICs.
PPPM (Peak Pulse Power) 400 W - surge energy handling capability under standardized 10/1000 μs waveform; validates protection against common lightning and load-dump events.
ID (Reverse Leakage) ≤500 μA at VWM - minimal standby current that avoids signal integrity degradation or battery drain in always-on systems.
TJ max. +150 °C - maximum junction temperature rating; enables use in under-hood automotive environments and high-temperature industrial enclosures.
AEC-Q101 Qualified Yes - certified for automotive-grade reliability per JESD22-A108, including temperature cycling, HTRB, and ESD testing; required for engine control, ADAS, and body electronics.

Pinout & Package

Package: SMA (DO-214AC), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band; anode is unmarked end.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Surge return path / clamping node Connected to protected line (e.g., 5 V rail); conducts avalanche current to ground during overvoltage event.
Anode (unbanded end) Reference / ground reference Typically tied to system ground or low-impedance return plane; completes clamping path and establishes VWM reference.

Key Features

Feature Design Value
400 W peak pulse power (10/1000 μs) Validates protection against ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 Level 3 surges without derating.
AEC-Q101 qualified (HE3 suffix) Confirms suitability for automotive applications requiring zero-failure field reliability across temperature, humidity, and vibration stress profiles.
Low clamping ratio (VC/VBR ≈ 1.48) Minimizes voltage overshoot during clamping, reducing risk of latch-up or gate oxide damage in protected MOSFETs and microcontrollers.
MSL Level 1 (JEDEC J-STD-020) Enables direct placement without baking or moisture-sensitive handling; compatible with standard reflow profiles up to 260 °C peak.
Glass-passivated junction Ensures long-term stability of VBR and ID parameters under thermal cycling and humidity exposure - critical for 15+ year automotive service life.

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 5 V supply lines in engine control units (ECUs) from load-dump transients and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between VCC and GND to clamp positive-going surges above 6.5 V while remaining inert during nominal operation.

Use Value: Limits transient voltage to ≤11.2 V, preventing damage to 5 V-rated MCUs and CAN transceivers without affecting steady-state regulation.

Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loop) of pressure sensors in factory automation systems.

IC Role / Device Role / Timing Role: Parallel-connected clamping device on signal line to shunt ESD and inductive kickback from solenoid actuators.

Use Value: Sub-1 ns response time and <500 μA leakage ensure no signal offset or noise injection during normal 20 mA operation.

Consumer USB Port ESD Protection Telecom Line Card Surge Suppression

Use Scenario: Adding secondary-level ESD protection on VBUS line of USB 2.0 ports in set-top boxes and smart displays.

IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing ±8 kV contact discharge (IEC 61000-4-2) before internal USB PHY reaches failure threshold.

Use Value: Clamping voltage ≤11.2 V prevents latch-up in USB switch ICs rated for 5.5 V absolute maximum, preserving data integrity.

Use Scenario: Front-end surge protection on Ethernet PHY power rails (3.3 V) in DSLAM line cards exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: Primary clamping element in multi-stage protection scheme, handling bulk energy before TVS arrays and GDTs.

Use Value: 400 W rating and 120 °C/W RθJA allow sustained operation in densely packed telecom chassis without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ6.5A-E3/61 Commercial-grade version; same electrical specs but not AEC-Q101 qualified; RoHS-compliant, MSL Level 1. Lacks automotive qualification; suitable for consumer, industrial, and telecom equipment where AEC-Q101 is not mandated. Select when cost sensitivity outweighs automotive reliability requirements and qualification documentation is not required.
SMAJ6.5CAHE3/61 Bidirectional variant; symmetric VBR (7.22–7.98 V) and VC (11.2 V) in both directions; same package and AEC-Q101 rating. Required for AC-coupled or dual-polarity signal lines (e.g., RS-485, CAN bus) where negative transients must also be suppressed. Choose only when bidirectional protection is needed; unidirectional SMAJ6.5AHE3/61 offers lower capacitance and tighter leakage in DC-only applications.

Compared with SMAJ6.5A-E3/61, the SMAJ6.5AHE3/61 adds automotive qualification without sacrificing electrical performance, while SMAJ6.5CAHE3/61 extends protection symmetry at the cost of slightly higher junction capacitance - making SMAJ6.5AHE3/61 optimal for cost-constrained, high-reliability DC power rail protection.

Availability

SMAJ6.5AHE3/61 is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor modules, consumer USB power delivery, and telecom line card designs requiring stable component supply and full AEC-Q101 traceability.

Supply support for SMAJ6.5AHE3/61 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The SMAJ series was developed specifically for high-energy transient suppression in automotive, industrial, and communications systems - balancing low clamping voltage, fast response, and rugged packaging for harsh-environment deployment.

FAQ

What is the clamping voltage of the SMAJ6.5AHE3/61 under a 10/1000 μs surge?

The SMAJ6.5AHE3/61 has a maximum clamping voltage (VC) of 11.2 V at a peak pulse current (IPPM) of 35.7 A under the standardized 10/1000 μs waveform. This value is measured per JEDEC standards and guarantees that protected circuits will not experience voltages exceeding 11.2 V during such transients - a critical parameter for ensuring compatibility with 5 V logic and power ICs. The SMAJ6.5AHE3/61 maintains this performance across its full operating temperature range.

Is the SMAJ6.5AHE3/61 qualified for automotive applications?

Yes, the SMAJ6.5AHE3/61 is explicitly AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88390 (Revision 09-Jan-2024). It undergoes rigorous stress testing including temperature cycling, highly accelerated life testing (HALT), and ESD verification to meet automotive reliability requirements. The SMAJ6.5AHE3/61 is approved for use in engine control, body electronics, and ADAS subsystems where zero-field-failure performance is mandatory.

What is the standoff voltage (VWM) and why does it matter for SMAJ6.5AHE3/61?

The SMAJ6.5AHE3/61 has a standoff voltage (VWM) of 6.5 V - the maximum DC or continuous reverse voltage the device can withstand without entering significant conduction. This parameter ensures minimal leakage (<500 μA) during normal operation, preventing unnecessary power loss or signal distortion in protected circuits. Selecting a VWM just above the system's maximum operating voltage (e.g., 5 V rail → 6.5 V VWM) optimizes margin against false triggering while maintaining robust surge headroom. The SMAJ6.5AHE3/61 achieves this balance with tight VBR tolerance (7.22–7.98 V).

How does the SMAJ6.5AHE3/61 differ from the bidirectional SMAJ6.5CAHE3/61?

The SMAJ6.5AHE3/61 is unidirectional, meaning it protects only against positive-going transients relative to ground, with polarity marked by a cathode band. In contrast, SMAJ6.5CAHE3/61 is bidirectional and symmetrical - suppressing surges of either polarity, making it suitable for AC-coupled or differential lines like RS-485. Both share identical AEC-Q101 qualification, package, and clamping performance, but the SMAJ6.5AHE3/61 offers lower junction capacitance and tighter leakage in DC applications where polarity is fixed.

What PCB layout guidance applies to the SMAJ6.5AHE3/61 for optimal thermal and electrical performance?

For optimal performance, the SMAJ6.5AHE3/61 should be mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in Vishay's datasheet for rated 400 W pulse power. Minimizing trace inductance between the device and protected node is essential - place it as close as possible to the connector or IC input. Thermal relief should avoid excessive isolation; the SMAJ6.5AHE3/61 relies on copper area for heat dissipation, with RθJA = 120 °C/W under these conditions. Avoid routing noisy signals near its terminals to prevent coupling.

SMAJ6.5AHE3/61 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
6.5V
Voltage - Breakdown (Min):
7.22V
Voltage - Clamping (Max) @ Ipp:
11.2V
Current - Peak Pulse (10/1000µs):
35.7A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

SMAJ6.5AHE3/61 FAQ

1.How can I place an order for SMAJ6.5AHE3/61 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMAJ6.5AHE3/61 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMAJ6.5AHE3/61 reliable?

The price and inventory of SMAJ6.5AHE3/61 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ6.5AHE3/61 is usually 5 days.

3.What payment methods are accepted for SMAJ6.5AHE3/61?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ6.5AHE3/61 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMAJ6.5AHE3/61?

SMAJ6.5AHE3/61 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMAJ6.5AHE3/61 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMAJ6.5AHE3/61?

For technical support, including SMAJ6.5AHE3/61 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ6.5AHE3/61 requirements.

6.How does Aetrix verify that SMAJ6.5AHE3/61 is sourced from the original manufacturer or authorized distributors?

All SMAJ6.5AHE3/61 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ6.5AHE3/61 meets industry standards.

7.What is the process for return or replacement of SMAJ6.5AHE3/61?

All SMAJ6.5AHE3/61 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ6.5AHE3/61, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMAJ6.5AHE3/61 part is unused and in its original packaging.

Return procedure for SMAJ6.5AHE3/61:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMAJ6.5AHE3/61 Tags

  • SMAJ6.5AHE3/61
  • SMAJ6.5AHE3/61 PDF
  • SMAJ6.5AHE3/61 Datasheet
  • SMAJ6.5AHE3/61 Specifications
  • SMAJ6.5AHE3/61 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMAJ6.5AHE3/61
  • Buy SMAJ6.5AHE3/61
  • SMAJ6.5AHE3/61 Price
  • SMAJ6.5AHE3/61 Distributor
  • SMAJ6.5AHE3/61 Supplier
  • SMAJ6.5AHE3/61 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER