Vishay General Semiconductor - Diodes Division SMAJ6.5AHE3_A/I
- Part No.:
- SMAJ6.5AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ6.5AHE3_A/I.pdf
- Description:
- TVS DIODE 6.5VWM 11.2VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:2,585
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ6.5AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed to protect sensitive electronics against ESD, lightning-induced surges, and inductive switching transients. It features a 6.5 V stand-off voltage (VWM), 7.22–7.98 V breakdown voltage (VBR) at 10 mA, and clamps up to 11.2 V at 35.7 A peak pulse current (IPPM) under 10/1000 μs waveform.
For engineers reviewing the SMAJ6.5AHE3_A/I datasheet, SMAJ6.5AHE3_A/I pinout, SMAJ6.5AHE3_A/I application, or SMAJ6.5AHE3_A/I equivalent, key selection criteria include its AEC-Q101 qualification, 400 W peak pulse power rating (10/1000 μs), low clamping ratio (VC/VBR ≈ 1.45), and suitability for automotive power line and sensor interface protection where fast response (<1 ns), low leakage (<500 μA), and robust surge handling are required.
Technical Context
This TVS diode operates as a voltage-clamping device in series with power or signal lines, conducting only when reverse voltage exceeds VBR to shunt transient energy to ground. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
Designed for unidirectional operation, SMAJ6.5AHE3_A/I exhibits polarity-sensitive mounting (cathode band marked), supports 40 A IFSM surge current (8.3 ms half-sine), and maintains thermal stability with RθJA = 120 °C/W and maximum junction temperature of +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 6.5 V - Maximum continuous reverse operating voltage before significant leakage; defines safe operating margin below clamping threshold. |
| VBR (Breakdown Voltage) | 7.22–7.98 V at 10 mA - Confirmed breakdown range ensuring predictable turn-on during overvoltage events. |
| VC (Clamping Voltage) | 11.2 V at IPPM = 35.7 A - Peak voltage seen by protected circuit during 10/1000 μs transient; determines downstream component stress. |
| PPPM (Peak Pulse Power) | 400 W - Surge energy-handling capability per 10/1000 μs waveform; sufficient for ISO 7637-2 Pulse 1/2a/3a and IEC 61000-4-5 Level 3. |
| ID (Reverse Leakage) | <500 μA at VWM - Low standby current minimizes power loss and avoids false triggering in low-power systems. |
| TJ max. | +150 °C - Enables use in under-hood automotive environments and industrial enclosures without derating. |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC standard. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input/Line side (non-banded end) | Connected to protected line (e.g., 12 V rail or sensor output); carries surge current into device during clamping. |
| Cathode | Ground/reference side (banded end) | Connected to system ground or low-impedance return path; provides low-resistance discharge path for transient energy. |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 μs) | Enables protection against high-energy transients like load dump (ISO 7637-2 Pulse 5a) without derating above 78 V. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control units, body electronics, and ADAS sensors requiring zero-failure reliability. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage exposure to downstream ICs such as microcontrollers or CAN transceivers during surge events. |
| MSL Level 1 (260 °C reflow) | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| Glass passivated junction | Ensures stable VBR over lifetime and resistance to humidity-induced parameter drift in harsh environments. |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V supply rails in automotive ECUs from load dump and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery input and DC-DC converter input stage. Use Value: Clamps to 11.2 V at 35.7 A, preventing damage to upstream regulators while meeting ISO 7637-2 Pulse 5a requirements. |
Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) from ESD and cable discharge events. IC Role / Device Role / Timing Role: TVS connected across signal and ground near connector entry point. Use Value: Sub-1 ns response time and 500 μA leakage preserve signal integrity and avoid bias current errors in precision front-ends. |
| Consumer USB Port ESD Protection | Telecom Data Line Surge Suppression |
|
Use Scenario: Adding secondary-level ESD protection on VBUS line of USB 2.0 ports in laptops and docking stations. IC Role / Device Role / Timing Role: Standoff-rated TVS placed after primary fuse and upstream of USB switch IC. Use Value: 6.5 V VWM allows compatibility with 5 V nominal bus while clamping <11.2 V to prevent latch-up in USB PHYs. |
Use Scenario: Protecting RS-485 transceiver inputs in building automation controllers exposed to lightning-induced surges. IC Role / Device Role / Timing Role: TVS mounted differential across A/B lines and common-mode to ground. Use Value: 400 W rating handles IEC 61000-4-5 combination wave (10/700 μs) up to 4 kV without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.5A-E3/61 | Commercial-grade (non-AEC-Q101), same electrical specs and SMA package. | Lacks automotive qualification; suitable for consumer or industrial non-automotive designs. | Select when AEC-Q101 is not required and cost optimization is prioritized. |
| SMBJ6.5AHE3_A/I | Same AEC-Q101 qualification but in larger SMB (DO-214AA) package with 600 W PPPM rating. | Higher surge capacity and lower RθJA (80 °C/W) enable higher-reliability or higher-current applications. | Choose when system-level surge test levels exceed 400 W or thermal constraints demand lower junction rise. |
Compared with SMAJ6.5AHE3_A/I, SMAJ6.5A-E3/61 offers identical clamping performance at lower qualification cost, while SMBJ6.5AHE3_A/I trades footprint size for enhanced surge margin and thermal performance-enabling design flexibility across automotive tiers and industrial ruggedness grades.
Availability
SMAJ6.5AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, consumer USB power delivery, and telecom data line protection requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMAJ6.5AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific validation.
The SMAJ series is engineered for robust transient suppression in space-constrained, high-reliability applications-particularly automotive power nets and industrial interfaces where AEC-Q101 compliance and repeatable clamping behavior are mandatory.
FAQ
What is the clamping voltage of SMAJ6.5AHE3_A/I at its rated peak pulse current?
The SMAJ6.5AHE3_A/I has a maximum clamping voltage (VC) of 11.2 V at a peak pulse current (IPPM) of 35.7 A under the standard 10/1000 μs waveform. This value is measured per JEDEC test conditions and reflects the actual voltage imposed on the protected circuit during worst-case surge events, making it critical for verifying downstream IC voltage tolerance margins in designs using SMAJ6.5AHE3_A/I.
Is SMAJ6.5AHE3_A/I suitable for automotive applications?
Yes, SMAJ6.5AHE3_A/I is AEC-Q101 qualified, as confirmed by the "HE3" suffix and Vishay documentation. It undergoes rigorous stress testing-including temperature cycling, highly accelerated life testing (HALT), and ESD verification-to meet automotive reliability standards. This makes SMAJ6.5AHE3_A/I appropriate for under-hood and cabin modules such as body control units, lighting drivers, and sensor signal conditioning circuits.
What does the "_A/I" suffix mean in SMAJ6.5AHE3_A/I?
The "_A/I" suffix in SMAJ6.5AHE3_A/I indicates the revision code ("A") and packaging format ("I" = 13-inch tape and reel, 7500 units per reel). This ordering code aligns with Vishay's standardized nomenclature for AEC-Q101-qualified parts in bulk tape-and-reel delivery, ensuring consistent traceability and manufacturing lot control for SMAJ6.5AHE3_A/I in high-volume production.
How does SMAJ6.5AHE3_A/I compare to bidirectional TVS diodes like SMAJ6.5CA?
SMAJ6.5AHE3_A/I is unidirectional and intended for DC line protection with defined polarity, whereas SMAJ6.5CA is bidirectional and suited for AC or symmetrical signal lines. SMAJ6.5AHE3_A/I offers lower leakage (<500 μA) and tighter VBR tolerance in one direction, while SMAJ6.5CA provides equal clamping in both polarities but higher ID at VWM. The choice depends on circuit topology-not interchangeability-so SMAJ6.5AHE3_A/I must be oriented correctly with cathode toward ground.
What is the thermal resistance of SMAJ6.5AHE3_A/I, and how does it affect layout?
SMAJ6.5AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on 0.2" × 0.2" copper pads per terminal. To maintain safe junction temperatures under repeated surges, PCB layout must provide adequate copper area and minimize trace length between SMAJ6.5AHE3_A/I and ground plane. For high-duty-cycle applications, consider adding thermal vias or using the device's RθJL = 30 °C/W path to internal ground planes to reduce thermal impedance.
SMAJ6.5AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.5V
- Voltage - Breakdown (Min):
- 7.22V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 35.7A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ6.5AHE3_A/I FAQ
1.How can I place an order for SMAJ6.5AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ6.5AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ6.5AHE3_A/I reliable?
The price and inventory of SMAJ6.5AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ6.5AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMAJ6.5AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ6.5AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ6.5AHE3_A/I?
SMAJ6.5AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ6.5AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ6.5AHE3_A/I?
For technical support, including SMAJ6.5AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ6.5AHE3_A/I requirements.
6.How does Aetrix verify that SMAJ6.5AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMAJ6.5AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ6.5AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMAJ6.5AHE3_A/I?
All SMAJ6.5AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ6.5AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ6.5AHE3_A/I part is unused and in its original packaging.
Return procedure for SMAJ6.5AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ6.5AHE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

