Vishay General Semiconductor - Diodes Division SMAJ8.5A-M3/61
- Part No.:
- SMAJ8.5A-M3/61
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ8.5A-M3/61.pdf
- Description:
- TVS DIODE 8.5VWM 14.4VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:4,880
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ8.5A-M3/61 from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features a 8.5 V stand-off voltage (VWM), 9.44–10.4 V breakdown voltage (VBR) at 1 mA, 14.4 V maximum clamping voltage (VC) at 27.8 A peak pulse current, and 400 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the SMAJ8.5A-M3/61 datasheet, SMAJ8.5A-M3/61 pinout, SMAJ8.5A-M3/61 application, or SMAJ8.5A-M3/61 equivalent, key selection criteria include unidirectional polarity, 1.0 μA max reverse leakage at VWM, 120 °C/W junction-to-ambient thermal resistance, AEC-Q101 qualification eligibility via HM3 suffix variants, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a fast-acting shunt protector: under normal conditions it presents high impedance (>1 MΩ) below VWM = 8.5 V, then rapidly avalanches into low-impedance conduction when transient voltage exceeds VBR (min 9.44 V). Its glass-passivated junction ensures stable breakdown characteristics and low incremental surge resistance.
It delivers 400 W peak pulse power handling per 10/1000 μs waveform at TA = 25 °C, derating linearly above 25 °C with RθJA = 120 °C/W, and supports repetitive surges at 0.01 % duty cycle. Polarity is marked by cathode band; bidirectional variants use CA suffix and lack marking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - Maximum continuous reverse operating voltage before significant leakage; defines safe operating margin for 9–12 V supply rails. |
| VBR @ IT = 1 mA | 9.44–10.4 V - Breakdown onset range; ensures reliable triggering above nominal rail while avoiding false trips during ripple or noise. |
| VC @ IPPM = 27.8 A | 14.4 V - Clamped voltage during 10/1000 μs surge; limits downstream device stress to ≤14.4 V under worst-case 400 W transient. |
| IPPM | 27.8 A - Peak pulse current supported at rated clamping voltage; determines minimum trace width and PCB pad sizing for surge path. |
| PPPM | 400 W - Peak pulse power rating with 10/1000 μs waveform; validates suitability for IEC 61000-4-5 Level 3 (1 kV/2 Ω) surge testing. |
| RθJA | 120 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs derating needed for >70 °C ambient operation. |
| ID @ VWM | 1.0 μA max - Reverse leakage at stand-off voltage; ensures negligible standby power loss in battery-powered sensor nodes. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, halogen-free, RoHS-compliant, MSL level 1 (260 °C peak reflow), matte tin-plated leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or return path; completes clamping loop when cathode is tied to protected line. |
| Cathode | High-side connection point | Marked by band; connects to protected signal/power line - conducts surge current to ground during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 μs) | Enables robust protection against IEC 61000-4-5 surges without external series impedance in low-impedance power rails. |
| 14.4 V clamping voltage at 27.8 A | Keeps protected 3.3 V/5 V logic ICs and gate drivers within absolute maximum ratings during 1 kV surge events. |
| Glass passivated junction | Ensures stable VBR tolerance and long-term reliability under repeated surge stress and temperature cycling. |
| MSL level 1, 260 °C peak reflow | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| Halogen-free, RoHS-compliant (M3 suffix) | Fulfills environmental compliance for automotive ECUs and industrial control modules targeting global markets. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: 12 V battery-supplied ECU power input exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VIN and GND to clamp transients before DC/DC converter input. Use Value: Limits voltage to ≤14.4 V during 100 V/50 ms load dump, preventing damage to upstream regulators and microcontrollers. |
Use Scenario: Analog output line (e.g., 4–20 mA transmitter) routed through noisy factory floor wiring. IC Role / Device Role / Timing Role: TVS mounted at connector entry point to absorb induced lightning-induced surges and switching noise. Use Value: Suppresses >1 kV transients within nanoseconds, preserving ADC accuracy and isolator integrity without signal distortion. |
| Consumer Power Adapter Input | MOSFET Gate Driver Protection |
Use Scenario: Secondary-side 5 V/9 V output of AC/DC adapter subjected to ESD and conducted noise. IC Role / Device Role / Timing Role: TVS across output terminals to prevent overvoltage from reaching USB ports or charging ICs. Use Value: Absorbs 30 A surges with <1 ns response, maintaining regulated output stability during plug/unplug events. |
Use Scenario: High-side N-channel MOSFET gate driven by PWM controller in motor driver half-bridge. IC Role / Device Role / Timing Role: TVS from gate to source to suppress Miller-induced voltage spikes during fast switching. Use Value: Clamps gate-source voltage to ≤14.4 V, preventing oxide breakdown and ensuring reliable turn-on/turn-off timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ8.5A-E3/61 | Same electrical specs; RoHS-compliant but not halogen-free (E3 vs M3). | Acceptable for commercial-grade designs where halogen-free requirement is not mandated. | Select E3 for cost-sensitive non-automotive applications; M3 required for automotive or green procurement policies. |
| SMAJ8.0A-M3/61 | Lower VWM (8.0 V) and VBR (8.89–9.83 V); identical package and surge rating. | Better suited for tighter 8 V rail margins; may false-trigger on 8.5 V nominal systems with ripple. | Choose SMAJ8.0A-M3/61 only if system VIN never exceeds 8.2 V; otherwise SMAJ8.5A-M3/61 provides safer margin. |
Compared with SMAJ8.5A-E3/61, the M3 variant adds halogen-free compliance without performance trade-offs; compared with SMAJ8.0A-M3/61, SMAJ8.5A-M3/61 offers higher stand-off margin critical for 9 V nominal rails, reducing risk of leakage-induced power loss or premature conduction.
Availability
SMAJ8.5A-M3/61 is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor transmitters, consumer power adapters, and MOSFET gate driver circuits requiring stable component supply, halogen-free compliance, and repeatable surge immunity performance.
Supply support for SMAJ8.5A-M3/61 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and AEC-Q qualification.
The SMAJ series targets board-level transient protection in automotive, industrial, and computing systems - engineered for fast response, precise clamping, and compatibility with high-volume SMT manufacturing.
FAQ
What is the maximum clamping voltage of the SMAJ8.5A-M3/61 under a 10/1000 μs surge?
The SMAJ8.5A-M3/61 has a maximum clamping voltage (VC) of 14.4 V at 27.8 A peak pulse current with a 10/1000 μs waveform. This value is measured per JEDEC standards and guarantees that downstream components see no more than 14.4 V during standardized surge events - critical for safeguarding 12 V logic interfaces and gate drivers. The SMAJ8.5A-M3/61 maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is the SMAJ8.5A-M3/61 suitable for automotive applications?
Yes - the SMAJ8.5A-M3/61 is halogen-free and RoHS-compliant, and belongs to the AEC-Q101-qualified SMAJ family (with HE3/HM3 suffix variants). While the M3 suffix itself denotes commercial-grade halogen-free construction, design-in for automotive use requires specifying HM3_X (e.g., SMAJ8.5AHM3_A/H) to ensure full AEC-Q101 qualification. The SMAJ8.5A-M3/61 shares identical electrical specs and package with qualified versions, enabling drop-in validation.
How does the SMAJ8.5A-M3/61 differ from bidirectional SMAJ8.5CA variants?
The SMAJ8.5A-M3/61 is unidirectional with cathode band marking and conducts only in reverse bias, making it ideal for DC power line protection. In contrast, SMAJ8.5CA is bidirectional, has no polarity marking, and clamps symmetrically in both directions - suited for AC signal lines or differential buses. Both share same VWM, VBR, and PPPM, but SMAJ8.5A-M3/61 exhibits forward voltage drop (~3.5 V at 25 A) while SMAJ8.5CA does not conduct forward.
What is the thermal resistance and how does it affect layout for the SMAJ8.5A-M3/61?
The SMAJ8.5A-M3/61 has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This means each watt of sustained power dissipation raises junction temperature by 120 °C above ambient. For reliable operation at 3.3 W steady-state power, PCB layout must include adequate copper area and avoid enclosed enclosures - though actual TVS operation is transient, not continuous.
Can the SMAJ8.5A-M3/61 be used in place of SMAJ8.0A-M3/61?
The SMAJ8.5A-M3/61 can replace SMAJ8.0A-M3/61 only if the protected circuit's maximum steady-state voltage remains ≤8.5 V. Because SMAJ8.5A-M3/61 has higher VWM and VBR, it avoids false triggering on 8.5 V rails with ripple, whereas SMAJ8.0A-M3/61 may leak excessively or avalanche prematurely. Substitution requires verifying that 14.4 V clamping voltage remains within downstream IC tolerances - the SMAJ8.5A-M3/61 is not a direct drop-in for 8.0 V systems.
SMAJ8.5A-M3/61 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.44V
- Voltage - Clamping (Max) @ Ipp:
- 14.4V
- Current - Peak Pulse (10/1000µs):
- 27.8A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ8.5A-M3/61 FAQ
1.How can I place an order for SMAJ8.5A-M3/61 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ8.5A-M3/61 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ8.5A-M3/61 reliable?
The price and inventory of SMAJ8.5A-M3/61 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ8.5A-M3/61 is usually 5 days.
3.What payment methods are accepted for SMAJ8.5A-M3/61?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ8.5A-M3/61 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ8.5A-M3/61?
SMAJ8.5A-M3/61 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ8.5A-M3/61 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ8.5A-M3/61?
For technical support, including SMAJ8.5A-M3/61 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ8.5A-M3/61 requirements.
6.How does Aetrix verify that SMAJ8.5A-M3/61 is sourced from the original manufacturer or authorized distributors?
All SMAJ8.5A-M3/61 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ8.5A-M3/61 meets industry standards.
7.What is the process for return or replacement of SMAJ8.5A-M3/61?
All SMAJ8.5A-M3/61 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ8.5A-M3/61, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ8.5A-M3/61 part is unused and in its original packaging.
Return procedure for SMAJ8.5A-M3/61:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ8.5A-M3/61 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

