Vishay General Semiconductor - Diodes Division SMAJ90AHE3/61
- Part No.:
- SMAJ90AHE3/61
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ90AHE3/61.pdf
- Description:
- TVS DIODE 90VWM 146VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:4,081
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ90AHE3/61 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for robust overvoltage protection of sensitive electronics. It features a 90 V standoff voltage (VWM), 100–111 V breakdown range (VBR at 1 mA), 146 V maximum clamping voltage (VC) at 2.1 A peak pulse current, and 400 W peak pulse power rating (10/1000 μs waveform). It is widely deployed to protect MOSFETs, ICs, and sensor signal lines in industrial motor drives and automotive power subsystems.
For engineers reviewing the SMAJ90AHE3/61 datasheet, SMAJ90AHE3/61 pinout, SMAJ90AHE3/61 application, or SMAJ90AHE3/61 equivalent, key selection considerations include its AEC-Q101 qualification, low 0.106 %/°C VBR temperature coefficient, 1.0 μA max reverse leakage at VWM, and compatibility with automated SMT placement on standard 0.2" × 0.2" copper pads.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 MΩ), but triggers into low-impedance conduction when transient voltage exceeds VBR, diverting surge current away from downstream circuitry. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ns).
The device is rated for 40 A non-repetitive forward surge current (8.3 ms half-sine), supports operating junction temperatures from –55 °C to +150 °C, and meets J-STD-020 MSL Level 1 with 260 °C reflow peak. Its thermal resistance (RθJA = 120 °C/W) reflects standard PCB mounting on minimal copper pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 90 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working margin for protected circuitry. |
| VBR (min/max) | 100 V / 111 V at 1 mA - Confirmed breakdown threshold range; ensures reliable triggering above system nominal voltage. |
| VC @ IPPM | 146 V at 2.1 A - Clamped voltage during 10/1000 μs surge; determines maximum stress imposed on protected IC or MOSFET. |
| PPPM | 400 W - Peak pulse power handling capability; sufficient for common inductive switching transients in 24–48 V systems. |
| IR @ VWM | ≤1.0 μA - Ultra-low reverse leakage; prevents measurable power loss or signal distortion in high-impedance sensor interfaces. |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood automotive or enclosed industrial enclosures. |
| Package | SMA (DO-214AC) - Standard surface-mount outline with cathode band marking; compatible with JEDEC-compliant reflow profiles. |
Pinout & Package
Package: SMA (DO-214AC), molded plastic case with matte tin-plated leads, UL 94 V-0 rated, polarity indicated by cathode band on unidirectional types.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or low-voltage rail; completes clamping path during positive transients. |
| Cathode | High-side input terminal | Connected to protected line (e.g., 90 V supply rail or signal); conducts surge current to anode when VAK > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock per AEC specification. |
| 400 W peak pulse power (10/1000 μs) | Handles typical load-dump and inductive kickback events in 24 V/48 V vehicle electrical systems without degradation. |
| Glass passivated junction | Ensures long-term stability of VBR and low leakage across temperature and lifetime; critical for safety-critical protection circuits. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow without baking; simplifies manufacturing logistics for high-volume SMT lines. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection margin for modern low-voltage logic ICs. |
Applications
| Automotive Power Distribution | Industrial Sensor Signal Protection |
|---|---|
|
Use Scenario: Protecting 90 V-rated DC-DC converter inputs against load dump transients in commercial vehicle battery systems. IC Role / Device Role / Timing Role: Unidirectional shunt clamping device placed between input rail and chassis ground. Use Value: Limits transient voltage to ≤146 V, preventing damage to upstream MOSFETs and controller ICs while maintaining system uptime. |
Use Scenario: Safeguarding analog output lines of pressure sensors in hydraulic control valves exposed to EMI and relay switching noise. IC Role / Device Role / Timing Role: Low-leakage voltage clamp on 4–20 mA current loop outputs. Use Value: Maintains signal integrity with <1.0 μA leakage at 90 V, ensuring measurement accuracy remains within ±0.1% full scale. |
| Telecom Power Interface | Motor Drive Gate Driver Protection |
|
Use Scenario: Input-stage surge suppression for PoE-powered remote radio units operating from 90 V phantom supplies. IC Role / Device Role / Timing Role: Primary overvoltage guard on DC input before DC-DC regulation stage. Use Value: Withstands repeated 400 W surges without parameter shift, supporting 10-year field deployment in outdoor telecom cabinets. |
Use Scenario: Clamping gate-source voltage spikes on 100 V-class SiC MOSFETs in BLDC motor inverters. IC Role / Device Role / Timing Role: Fast-response TVS placed directly across gate and source terminals. Use Value: Sub-1 ns response time limits VGS excursion to <146 V, preventing unintended turn-on and gate oxide failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ90A-E3/61 | Commercial-grade version; lacks AEC-Q101 qualification and uses RoHS-compliant (non-halogen-free) plating. | Approved for industrial/commercial use only; not certified for automotive under-hood environments. | Select when cost sensitivity outweighs automotive qualification requirements and thermal cycling exposure is limited. |
| SMAJ90AHM3/61 | Halogen-free, RoHS-compliant, and AEC-Q101 qualified; identical electrical specs but different lead finish and material categorization. | Meets stricter environmental compliance (e.g., EU automotive Tier 1 mandates) without performance trade-offs. | Choose when halogen-free content is contractually required and full AEC-Q101 traceability is mandatory. |
Compared with SMAJ90A-E3/61 and SMAJ90AHM3/61, the SMAJ90AHE3/61 provides AEC-Q101 qualification with standard RoHS compliance-offering automotive reliability without halogen-free cost premium-making it optimal for cost-constrained automotive subsystems where halogen content is not regulated.
Availability
SMAJ90AHE3/61 is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interfaces, telecom power inputs, and motor drive gate protection requiring stable component supply and AEC-Q101 assurance.
Supply support for SMAJ90AHE3/61 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The SMAJ series is engineered for high-energy transient suppression in harsh environments-targeting automotive, industrial, and telecom applications where consistent clamping performance and long-term stability are mission-critical.
FAQ
What is the clamping voltage of the SMAJ90AHE3/61 under a 10/1000 μs surge?
The SMAJ90AHE3/61 has a maximum clamping voltage (VC) of 146 V at 2.1 A peak pulse current (IPPM) under the standardized 10/1000 μs waveform. This value is measured per Figure 1 in Vishay Document 88390 and defines the upper voltage limit imposed on protected circuitry during transient events. The SMAJ90AHE3/61 maintains this clamping performance across its qualified temperature range and after multiple surge cycles.
Is the SMAJ90AHE3/61 suitable for automotive applications?
Yes, the SMAJ90AHE3/61 is AEC-Q101 qualified per Vishay's ordering code definition, confirming its suitability for automotive applications including engine control modules, body electronics, and power distribution units. Its construction-including glass-passivated junction, MSL Level 1 rating, and –55 °C to +150 °C operating range-meets automotive reliability requirements. The SMAJ90AHE3/61 is explicitly designated for automotive use in Vishay's documentation.
What does the "HE3" suffix indicate in SMAJ90AHE3/61?
The "HE3" suffix in SMAJ90AHE3/61 denotes a RoHS-compliant, AEC-Q101 qualified variant with standard matte tin plating. Per Vishay's ordering information, "HE3" distinguishes this grade from "E3" (commercial RoHS only) and "HM3" (halogen-free + AEC-Q101). The SMAJ90AHE3/61 thus combines automotive qualification with mainstream environmental compliance, without halogen-free cost premiums.
How does the SMAJ90AHE3/61 compare to bidirectional TVS diodes like SMAJ90CA?
The SMAJ90AHE3/61 is unidirectional and intended for DC line protection where polarity is fixed (e.g., positive supply rails), offering lower leakage (<1.0 μA) and tighter VBR tolerance than bidirectional counterparts. In contrast, SMAJ90CA protects AC or polarity-agnostic signals but exhibits higher leakage and symmetrical clamping. The SMAJ90AHE3/61 is not interchangeable with SMAJ90CA without circuit redesign due to polarity dependence and differing leakage behavior.
What is the thermal resistance of the SMAJ90AHE3/61, and how does it affect layout?
The SMAJ90AHE3/61 has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on minimum recommended 0.2" × 0.2" copper pads per terminal. This value assumes no additional heatsinking; exceeding 3.3 W steady-state dissipation requires thermal derating or enhanced copper area. Layout must follow Vishay's DO-214AC pad dimensions to maintain specified RθJA and avoid premature thermal failure. The SMAJ90AHE3/61's thermal performance is validated under these conditions.
SMAJ90AHE3/61 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 90V
- Voltage - Breakdown (Min):
- 100V
- Voltage - Clamping (Max) @ Ipp:
- 146V
- Current - Peak Pulse (10/1000µs):
- 2.1A
- Power - Peak Pulse:
- 300W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ90AHE3/61 FAQ
1.How can I place an order for SMAJ90AHE3/61 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ90AHE3/61 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ90AHE3/61 reliable?
The price and inventory of SMAJ90AHE3/61 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ90AHE3/61 is usually 5 days.
3.What payment methods are accepted for SMAJ90AHE3/61?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ90AHE3/61 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ90AHE3/61?
SMAJ90AHE3/61 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ90AHE3/61 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ90AHE3/61?
For technical support, including SMAJ90AHE3/61 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ90AHE3/61 requirements.
6.How does Aetrix verify that SMAJ90AHE3/61 is sourced from the original manufacturer or authorized distributors?
All SMAJ90AHE3/61 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ90AHE3/61 meets industry standards.
7.What is the process for return or replacement of SMAJ90AHE3/61?
All SMAJ90AHE3/61 units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ90AHE3/61, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ90AHE3/61 part is unused and in its original packaging.
Return procedure for SMAJ90AHE3/61:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ90AHE3/61 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

