Vishay General Semiconductor - Diodes Division SMAJ90AHM3_A/I
- Part No.:
- SMAJ90AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
SMAJ90AHM3_A/I.pdf
- Description:
- TVS DIODE 90VWM 146VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:6,818
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMAJ90AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients up to 146 V at 2.1 A peak pulse current, with 400 W peak pulse power (10/1000 μs), 90 V stand-off voltage, and 100–111 V breakdown voltage range. It protects MOSFETs, ICs, and sensor signal lines in automotive and industrial power electronics.
For engineers reviewing the SMAJ90AHM3_A/I datasheet, SMAJ90AHM3_A/I pinout, SMAJ90AHM3_A/I application, or SMAJ90AHM3_A/I equivalent, key selection criteria include clamping voltage (VC = 146 V), stand-off voltage (VWM = 90 V), unidirectional polarity, AEC-Q101 qualification status, and halogen-free RoHS compliance per HM3 suffix.
Technical Context
This TVS diode operates as a fast-acting shunt clamp during overvoltage events, leveraging an avalanche breakdown mechanism with <1 ps response time. Its unidirectional configuration enables integration into DC-biased circuits where reverse conduction must be blocked until clamping threshold is exceeded.
Thermal performance is defined by RθJA = 120 °C/W and RθJL = 30 °C/W, requiring minimum 5.0 mm × 5.0 mm copper pads per terminal for rated 400 W pulse handling. The device is rated for TJ = –55 °C to +150 °C and meets MSL level 1 (260 °C reflow peak).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage (VWM) | 90 V - Maximum continuous reverse operating voltage before leakage exceeds 1.0 μA |
| Breakdown Voltage (VBR) | 100–111 V at 1.0 mA test current - Confirmed avalanche onset range for reliable clamping initiation |
| Clamping Voltage (VC) | 146 V at IPPM = 2.1 A - Peak voltage seen by protected circuit during 10/1000 μs surge |
| Peak Pulse Power (PPPM) | 400 W (10/1000 μs waveform) - Sustained surge energy handling capability on specified PCB pad layout |
| Peak Pulse Current (IPPM) | 2.1 A - Maximum non-repetitive surge current supported without degradation |
| Junction Temperature Range | –55 °C to +150 °C - Validated operating envelope for under-hood automotive and industrial environments |
| Package | SMA (DO-214AC) - Surface-mount outline with 2.54 mm lead pitch, compatible with automated placement |
Pinout & Package
Package: SMA (DO-214AC), molded plastic case with matte tin-plated leads; cathode indicated by band on one end; terminals are anode and cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to system ground or low-side return path in unidirectional protection configurations |
| Cathode | Avalanche clamping node / Surge current sink | Connected to protected line (e.g., power rail or signal trace); conducts during overvoltage to clamp voltage |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 μs) | Enables robust protection against IEC 61000-4-5 Level 3 surges (1 kV/2 Ω) on 12 V/24 V systems |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
| Halogen-free & RoHS-compliant | Meets EU Directive 2011/65/EU and IPC-1752A material declaration requirements |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast-rising transients (<1 ns rise time) |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow profiles without preconditioning or baking |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Clamp |
|---|---|
|
Use Scenario: Suppresses load-dump and jump-start transients on 24 V battery-fed ECUs and body control modules. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between power rail and chassis ground to clamp spikes above 90 V. Use Value: Limits rail voltage to ≤146 V during 100 ms load-dump events, preventing damage to downstream 3.3 V/5 V regulators and CAN transceivers. |
Use Scenario: Shields analog output lines of pressure/temperature sensors from ESD and inductive switching noise in PLC I/O modules. IC Role / Device Role / Timing Role: Low-capacitance TVS connected between signal line and ground to absorb ±8 kV contact ESD per IEC 61000-4-2. Use Value: Maintains signal integrity below 100 pF junction capacitance while clamping ESD pulses to <150 V, preserving ADC accuracy. |
| DC Motor Drive Gate Protection | Telecom Power Input Stage |
|
Use Scenario: Protects high-side N-channel MOSFET gate drivers from flyback voltage spikes during motor commutation. IC Role / Device Role / Timing Role: Unidirectional TVS tied between gate and source, triggered only when gate-source voltage exceeds 90 V. Use Value: Prevents gate oxide rupture by limiting VGS to ≤146 V during 100 ns–1 μs inductive kick, enabling use of cost-effective 100 V-rated MOSFETs. |
Use Scenario: Guards primary-side DC input of telecom power supplies against lightning-induced surges on -48 V distribution buses. IC Role / Device Role / Timing Role: Series-connected TVS pair (anode-to-cathode) used in bidirectional mode for negative/positive surge suppression. Use Value: Withstands repeated 6 kV/3 Ω surges per ITU-T K.20 while maintaining <1 μA leakage at -48 V nominal, ensuring standby efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ90AHE3_A/I | Same electrical specs but RoHS-compliant commercial grade (E3), not halogen-free or AEC-Q101 qualified | Lacks automotive qualification and halogen-free certification; suitable for industrial/commercial designs without AEC requirements | Select SMAJ90AHE3_A/I when AEC-Q101 and halogen-free compliance are not required, reducing cost and simplifying material declarations |
| SMBJ90A-M3/5A | Higher 600 W peak pulse power, SMB (DO-214AA) package, 3.5 mm × 3.5 mm footprint vs. SMA's 4.93 mm × 3.99 mm | Offers higher surge margin but requires PCB layout change; thermal resistance RθJA = 85 °C/W vs. 120 °C/W | Choose SMBJ90A-M3/5A when surge immunity must exceed IEC 61000-4-5 Level 4 and board space allows larger package |
Compared with SMAJ90AHM3_A/I, SMAJ90AHE3_A/I sacrifices automotive qualification and halogen-free status for lower cost, while SMBJ90A-M3/5A trades smaller footprint for higher power rating and improved thermal performance-neither is pin-compatible due to differing package outlines (SMA vs. SMB).
Availability
SMAJ90AHM3_A/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, DC motor drive protection, and telecom power input stages requiring stable component supply with full AEC-Q101 traceability and halogen-free compliance.
Supply support for SMAJ90AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade validation.
The SMAJ series targets high-reliability transient suppression in harsh environments, with design focus on fast clamping, repeatable surge endurance, and seamless integration into automated SMT assembly lines for automotive and industrial OEMs.
FAQ
What is the clamping voltage of SMAJ90AHM3_A/I at its rated peak pulse current?
The SMAJ90AHM3_A/I has a maximum clamping voltage (VC) of 146 V at its rated peak pulse current (IPPM) of 2.1 A under the 10/1000 μs waveform condition. This value is measured with the device mounted on 5.0 mm × 5.0 mm copper pads per terminal and represents the upper limit of voltage imposed on the protected circuit during surge events. The SMAJ90AHM3_A/I maintains this clamping performance across its qualified operating temperature range.
Is SMAJ90AHM3_A/I qualified for automotive applications?
Yes, SMAJ90AHM3_A/I is AEC-Q101 qualified, as confirmed by the HM3 suffix in its ordering code. This qualification covers stress tests including high-temperature reverse bias (HTRB), temperature cycling, and ESD (HBM ≥ 8 kV). The device is intended for under-hood and chassis-mounted automotive electronics where sustained operation from –40 °C to +125 °C ambient is required. SMAJ90AHM3_A/I meets these requirements with its rated TJ range of –55 °C to +150 °C.
What does the "HM3" suffix indicate in SMAJ90AHM3_A/I?
The "HM3" suffix in SMAJ90AHM3_A/I denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification. Specifically, "H" indicates AEC-Q101 qualification, "M" signifies halogen-free molding compound, and "3" confirms RoHS compliance per EU Directive 2011/65/EU. This distinguishes it from E3 (RoHS only) and HE3 (AEC-Q101 + RoHS, not halogen-free) variants. SMAJ90AHM3_A/I thus satisfies Tier 1 automotive material disclosure and environmental compliance mandates.
Can SMAJ90AHM3_A/I be used in bidirectional protection circuits?
No, SMAJ90AHM3_A/I is a unidirectional TVS diode, as indicated by the "A" (not "CA") in its part number and the presence of a cathode band marking. It conducts only in reverse breakdown and blocks forward current beyond ~3.5 V. For bidirectional protection, the SMAJ90CA variant must be used. Attempting to use SMAJ90AHM3_A/I in AC or dual-polarity applications will result in unintended forward conduction and failure to suppress negative transients. Always verify polarity marking before placement.
What is the thermal resistance from junction to ambient for SMAJ90AHM3_A/I?
The typical thermal resistance from junction to ambient (RθJA) for SMAJ90AHM3_A/I is 120 °C/W, measured under standard JEDEC conditions using minimum recommended pad layout (0.2" × 0.2" copper pads per terminal). This value assumes no additional heatsinking and defines the steady-state temperature rise per watt of dissipated power. For pulsed operation, transient thermal impedance curves (Fig. 5 in datasheet 88390) govern short-duration surge handling, where SMAJ90AHM3_A/I sustains 400 W for ≤1 ms without exceeding TJ max.
SMAJ90AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 90V
- Voltage - Breakdown (Min):
- 100V
- Voltage - Clamping (Max) @ Ipp:
- 146V
- Current - Peak Pulse (10/1000µs):
- 2.1A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
SMAJ90AHM3_A/I FAQ
1.How can I place an order for SMAJ90AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMAJ90AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMAJ90AHM3_A/I reliable?
The price and inventory of SMAJ90AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMAJ90AHM3_A/I is usually 5 days.
3.What payment methods are accepted for SMAJ90AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMAJ90AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMAJ90AHM3_A/I?
SMAJ90AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMAJ90AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMAJ90AHM3_A/I?
For technical support, including SMAJ90AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMAJ90AHM3_A/I requirements.
6.How does Aetrix verify that SMAJ90AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All SMAJ90AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMAJ90AHM3_A/I meets industry standards.
7.What is the process for return or replacement of SMAJ90AHM3_A/I?
All SMAJ90AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMAJ90AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMAJ90AHM3_A/I part is unused and in its original packaging.
Return procedure for SMAJ90AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMAJ90AHM3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

