My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMB10J10AHE3/5B
- Part No.:
- SMB10J10AHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J10AHE3/5B.pdf
- Description:
- TVS DIODE 10VWM 17VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,024
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMB10J10AHE3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on DC power rails and signal lines. It features a 10 V stand-off voltage (VWM), 11.1–12.3 V breakdown voltage (VBR) at 1 mA, 17.0 V clamping voltage (VC) at 5.0 A peak pulse current, and 1000 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive ECUs, industrial sensor interfaces, and power supply input stages.
For engineers reviewing the SMB10J10AHE3/5B datasheet, SMB10J10AHE3/5B pinout, SMB10J10AHE3/5B application, or SMB10J10AHE3/5B equivalent, key selection criteria include AEC-Q101 qualification, unidirectional polarity, low clamping ratio (VC/VBR ≈ 1.53), thermal resistance (RθJL = 20 °C/W), and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 MΩ leakage at 10 V), then rapidly avalanches below 100 ns to divert transient energy away from downstream ICs. Its glass-passivated junction ensures stable breakdown and low incremental surge resistance, critical for repeatable clamping performance across 8.3 ms surge events and repetitive transients.
The SMB10J10AHE3/5B is rated for -55 °C to +150 °C junction temperature, meets MSL Level 1 per J-STD-020 (260 °C peak reflow), and uses matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 - enabling robust solder joint reliability in automotive under-hood and industrial control environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10 V - maximum continuous reverse operating voltage before significant leakage; defines safe DC rail margin for 12 V systems. |
| VBR (min/max) | 11.1 V / 12.3 V at 1 mA - tight breakdown tolerance ensures predictable turn-on across temperature and unit variation. |
| VC @ IPPM | 17.0 V at 5.0 A - clamping voltage during 10/1000 µs surge; limits stress on protected MOSFET gate or MCU I/O. |
| PPPM | 1000 W - peak pulse power handling with standard 10/1000 µs waveform; supports ISO 7637-2 Pulse 1/2a/5a compliance testing. |
| ID @ VWM | 5.0 µA - ultra-low reverse leakage at stand-off voltage, minimizing standby power loss in battery-powered sensors. |
| TJ max. | +150 °C - enables operation in engine control modules and motor drives without derating at ambient up to +125 °C. |
| RθJL | 20 °C/W - low junction-to-lead thermal resistance allows efficient heat transfer to PCB copper, sustaining repeated surges. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with cathode band marking; dimensions 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); UL 94 V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction or surge clamping | Connected to protected line (e.g., 12 V rail); must route with low-inductance trace to minimize overshoot. |
| Cathode | Current exit terminal; marked by color band | Connected to ground or lower-potential reference; requires ≥0.2" × 0.2" copper pad per terminal for thermal and surge current handling. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including powertrain and ADAS sensor interfaces per stress test requirements. |
| Glass passivated junction | Ensures stable VBR over lifetime and immunity to humidity-induced parameter drift in harsh environments. |
| Low clamping ratio (VC/VBR ≈ 1.53) | Minimizes overvoltage exposure to downstream components during fast transients like load dump or ESD. |
| MSL Level 1, 260 °C peak reflow | Supports single-pass lead-free reflow without popcorn cracking or delamination in high-volume SMT lines. |
| Matte tin plating, JESD 22-B102 compliant | Guarantees solderability and whisker resistance for long-term field reliability in vibration-prone installations. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V supply inputs of engine control units (ECUs) against ISO 7637-2 load dump pulses (up to 60 V, 400 ms). IC Role / Device Role / Timing Role: Shunt clamping device that activates within <100 ns to clamp voltage to ≤17.0 V while diverting >5 A surge current. Use Value: Prevents latch-up or gate oxide damage in downstream PMICs and microcontrollers during alternator load dump events. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loop) of pressure/temperature sensors in factory automation. IC Role / Device Role / Timing Role: Bidirectional transient suppression on signal lines exposed to relay switching noise and EFT bursts. Use Value: Maintains signal integrity and prevents false triggering in PLC analog input modules during 2 kV EFT testing. |
| DC-DC Converter Input Stage | USB Port ESD Protection |
|
Use Scenario: Input surge protection for 24 V to 5 V buck converters powering infotainment head units. IC Role / Device Role / Timing Role: Primary overvoltage clamp upstream of input capacitor and controller IC. Use Value: Absorbs 1000 W transients without degradation, preserving converter startup behavior and preventing input overvoltage shutdown. |
Use Scenario: Secondary-level ESD protection on VBUS line of USB 2.0 ports in automotive telematics modules. IC Role / Device Role / Timing Role: Fast-response shunt element meeting IEC 61000-4-2 ±15 kV contact discharge requirement. Use Value: Limits VBUS overshoot to <17 V during ESD event, protecting USB switch and PHY from permanent damage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ10A-E3/52 | Same SMB package, identical VWM (10 V) and VC (17.0 V), but rated for 600 W PPPM (vs. 1000 W). | Limited to lower-energy transients (e.g., IEC 61000-4-4 level 3); not suitable for ISO 7637-2 Pulse 5a. | Select SMBJ10A-E3/52 only when system-level surge testing does not exceed 600 W capability. |
| 1.5SMC10A | DO-214AB (SMC) package, larger footprint (7.11 mm × 6.22 mm), same electrical specs but higher RθJA (40 °C/W vs. 72 °C/W). | Requires more PCB area and offers inferior thermal coupling; less suitable for dense automotive layouts. | Choose 1.5SMC10A only if existing board design reserves SMC footprint and thermal management is externally enhanced. |
Compared with SMBJ10A-E3/52 and 1.5SMC10A, the SMB10J10AHE3/5B delivers higher surge robustness in a compact AEC-Q101-qualified package - making it optimal for space-constrained, high-reliability automotive and industrial power rail protection where 1000 W clamping and +150 °C operation are mandatory.
Availability
SMB10J10AHE3/5B is available at Aetrix Electronics and suitable for automotive ECU designs, industrial sensor interface boards, and DC-DC converter input protection requiring stable component supply, full AEC-Q101 traceability, and RoHS-compliant manufacturing.
Supply support for SMB10J10AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power density, and automotive-grade qualification.
The SMB10JxxA series targets high-power-density transient suppression in automotive and industrial systems - engineered for AEC-Q101 compliance, low clamping voltage, and robust surge handling in minimal SMB footprint.
FAQ
What is the clamping voltage of SMB10J10AHE3/5B at its rated peak pulse current?
The SMB10J10AHE3/5B has a maximum clamping voltage (VC) of 17.0 V at 5.0 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and reflects actual voltage seen by protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings. The SMB10J10AHE3/5B maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMB10J10AHE3/5B suitable for automotive applications?
Yes, SMB10J10AHE3/5B is AEC-Q101 qualified and manufactured with HE3 suffix indicating RoHS-compliant, automotive-grade construction. It meets MSL Level 1, withstands 260 °C peak reflow, and is validated for use in engine control units, body electronics, and ADAS sensor modules. The SMB10J10AHE3/5B also complies with ISO 7637-2 load dump immunity requirements when applied with proper PCB layout (0.2" × 0.2" copper pads).
How does the SMB10J10AHE3/5B differ from the SMBJ10A series?
The SMB10J10AHE3/5B delivers 1000 W peak pulse power (PPPM) versus 600 W for SMBJ10A, due to optimized chip geometry and thermal design. Both share identical VWM (10 V), VBR (11.1–12.3 V), and VC (17.0 V), but the SMB10J10AHE3/5B sustains higher surge energy without degradation. The SMB10J10AHE3/5B also carries explicit AEC-Q101 qualification, whereas SMBJ10A is commercial-grade unless specified otherwise.
What is the reverse leakage current of SMB10J10AHE3/5B at its stand-off voltage?
The SMB10J10AHE3/5B exhibits a maximum reverse leakage current (ID) of 5.0 µA at its 10 V stand-off voltage (VWM) and 25 °C ambient temperature. This ultra-low leakage minimizes quiescent power draw in always-on automotive modules and preserves battery life in remote sensor nodes. Leakage remains below 50 µA up to +125 °C ambient, verified per Vishay's thermal derating curves.
Does SMB10J10AHE3/5B require special PCB layout considerations?
Yes - the SMB10J10AHE3/5B requires minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads on each terminal to achieve rated 1000 W pulse power and thermal performance. Short, wide traces between the SMB10J10AHE3/5B and protected node reduce inductance and prevent voltage overshoot. The cathode band must be correctly oriented toward ground, and no thermal relief should be used on pads to maintain low RθJL (20 °C/W).
SMB10J10AHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.1V
- Voltage - Clamping (Max) @ Ipp:
- 17V
- Current - Peak Pulse (10/1000µs):
- 58.8A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J10AHE3/5B FAQ
1.How can I place an order for SMB10J10AHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J10AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J10AHE3/5B reliable?
The price and inventory of SMB10J10AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J10AHE3/5B is usually 5 days.
3.What payment methods are accepted for SMB10J10AHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J10AHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J10AHE3/5B?
SMB10J10AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J10AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J10AHE3/5B?
For technical support, including SMB10J10AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J10AHE3/5B requirements.
6.How does Aetrix verify that SMB10J10AHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMB10J10AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J10AHE3/5B meets industry standards.
7.What is the process for return or replacement of SMB10J10AHE3/5B?
All SMB10J10AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J10AHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J10AHE3/5B part is unused and in its original packaging.
Return procedure for SMB10J10AHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J10AHE3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
