Vishay General Semiconductor - Diodes Division SMB10J11AHE3_A/I
- Part No.:
- SMB10J11AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J11AHE3_A/I.pdf
- Description:
- TVS DIODE 11VWM 18.2VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMB10J11AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on power and signal lines. It features a 11 V stand-off voltage (VWM), 12.2–13.5 V breakdown voltage (VBR at 1 mA), 18.2 V clamping voltage (VC) at 54.9 A peak pulse current, and 1000 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive sensor interfaces and industrial I/O protection.
For engineers reviewing the SMB10J11AHE3_A/I datasheet, SMB10J11AHE3_A/I pinout, SMB10J11AHE3_A/I application, or SMB10J11AHE3_A/I equivalent, key selection criteria include AEC-Q101 qualification, unidirectional polarity with cathode band marking, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a clamping-type overvoltage protector using an avalanche junction structure. Its glass-passivated silicon die delivers sub-nanosecond response time to transients, with thermal resistance of 72 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead), enabling robust operation up to 150 °C junction temperature under repetitive surge conditions.
The device meets J-STD-020 MSL Level 1 (260 °C peak reflow), supports 100 A non-repetitive forward surge current (IFSM), and exhibits ≤1000 nA reverse leakage at VWM, ensuring minimal standby power loss in always-on automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - maximum continuous reverse operating voltage before significant leakage; sets upper limit for protected line voltage. |
| VBR (min/max) | 12.2 V / 13.5 V at 1 mA - guaranteed avalanche initiation range; ensures predictable turn-on during ESD or load-dump events. |
| VC @ IPPM | 18.2 V at 54.9 A - clamped voltage during 1000 W surge; defines worst-case overvoltage seen by downstream ICs. |
| PPPM | 1000 W (10/1000 µs) - peak transient energy handling capacity; sufficient for ISO 7637-2 Pulse 1/2a/5a automotive transients. |
| IFSM | 100 A (8.3 ms half-sine) - surge current tolerance for inductive switch-off events; supports motor driver and relay coil suppression. |
| TJ max | 150 °C - maximum junction temperature; enables use in under-hood automotive environments without derating. |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress test plan. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by color band; polarity critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-impedance return path; completes clamping loop during transient. |
| Cathode | High-side connection point | Connected to protected line (e.g., CAN_H, LIN, sensor supply); conducts avalanche current toward ground. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive electronics including engine control units, body controllers, and ADAS sensor interfaces. |
| 1000 W peak pulse power | Withstands ISO 7637-2 Pulse 5a (load dump up to 60 V, 100 ms) when used with appropriate series impedance. |
| Glass-passivated junction | Ensures stable VBR and low leakage over lifetime; resistant to humidity and contamination in harsh environments. |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; compatible with high-volume automotive PCB assembly lines. |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes overvoltage stress on protected devices - critical for 12 V rail protection of 3.3 V/5 V microcontrollers. |
Applications
| Automotive Sensor Protection | Industrial I/O Interface |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, or position sensors in engine bay modules exposed to load dump and ISO 16750-2 transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between sensor output and microcontroller ADC input. Use Value: Limits transient voltage to ≤18.2 V, preventing latch-up or damage to 5 V-tolerant SAR ADC inputs while maintaining signal integrity below 11 V nominal. |
Use Scenario: Safeguarding RS-485 transceiver data lines in factory automation PLCs subjected to lightning-induced surges on long cable runs. IC Role / Device Role / Timing Role: Line-side TVS on differential bus pair (A/B), mounted adjacent to connector with short trace routing. Use Value: Clamps 1 kV/1 kΩ ring wave surges to <20 V within nanoseconds, preserving signal eye diagram and meeting IEC 61000-4-5 Level 3 immunity. |
| Power Supply Rail Protection | Motor Driver Gate Protection |
Use Scenario: Secondary-side overvoltage suppression on 12 V DC-DC converter outputs feeding infotainment head units. IC Role / Device Role / Timing Role: Parallel-connected TVS across output capacitor, referenced to local ground plane. Use Value: Absorbs 1000 W load dump energy without failure, maintaining regulated output within safe limits for downstream PMICs and SoCs. |
Use Scenario: Gate-source protection of N-channel MOSFETs in automotive window lift or seat actuator drivers. IC Role / Device Role / Timing Role: Bidirectional-capable variant not applicable; this unidirectional SMB10J11AHE3_A/I used cathode-to-gate, anode-to-source. Use Value: Prevents gate oxide rupture from Miller-induced spikes during high di/dt switching, with VC margin below 20 V absolute max rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ11AHE3_A/I | Same VWM (11 V), identical SMB package, but lower PPPM = 600 W and higher VC = 19.9 V at 30 A. | Not suitable for ISO 7637-2 Pulse 5a; limited to lower-energy transients like ESD or capacitive coupling. | Select SMB10J11AHE3_A/I when 1000 W surge capability and tighter clamping are required. |
| 1.5SMC11AH | Same VWM and VBR, but SMC (DO-214AB) package - 2.5 mm wider, higher thermal mass, RθJA = 50 °C/W. | Better thermal performance for sustained surge duty cycles; requires larger PCB footprint. | Choose 1.5SMC11AH only if board layout allows SMC size and enhanced thermal dissipation is prioritized over space-constrained SMB fit. |
Compared with SMBJ11AHE3_A/I and 1.5SMC11AH, SMB10J11AHE3_A/I uniquely balances AEC-Q101 compliance, 1000 W surge rating, and SMB footprint - making it optimal for space-limited automotive modules requiring full load-dump immunity without thermal derating.
Availability
SMB10J11AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and power supply rail protection requiring stable component supply and AEC-Q101 assurance.
Supply support for SMB10J11AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific validation.
The SMB10JxxA family targets high-power-density transient suppression in automotive and industrial systems, engineered to meet stringent AEC-Q101 requirements while maintaining compatibility with high-speed SMT assembly processes.
FAQ
What is the clamping voltage of SMB10J11AHE3_A/I at its rated peak pulse current?
The SMB10J11AHE3_A/I has a maximum clamping voltage (VC) of 18.2 V at 54.9 A peak pulse current (IPPM) under 10/1000 µs waveform conditions. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMB10J11AHE3_A/I maintains this clamping performance across its qualified temperature range and after AEC-Q101 stress testing.
Is SMB10J11AHE3_A/I suitable for bidirectional signal line protection?
No - SMB10J11AHE3_A/I is a unidirectional TVS diode, marked with a cathode band and intended for DC-biased lines such as power rails or single-ended sensor outputs. For bidirectional protection (e.g., RS-485, USB, or CAN), Vishay offers the SMB8J11CAHE3_A/I variant with symmetrical breakdown and same package. Using SMB10J11AHE3_A/I on AC-coupled or floating lines risks reverse conduction and failure.
Does SMB10J11AHE3_A/I require derating at elevated ambient temperatures?
Yes - SMB10J11AHE3_A/I must be derated above 25 °C ambient per Figure 2 in Vishay document 88422. At 85 °C ambient, its 1000 W peak pulse power rating reduces to approximately 650 W, and at 125 °C, it drops to ~400 W. Derating ensures junction temperature remains ≤150 °C during surge events. Layout with 0.2" × 0.2" copper pads per terminal is required to achieve published ratings.
What does the "HE3" suffix indicate in SMB10J11AHE3_A/I?
The "HE3" suffix in SMB10J11AHE3_A/I denotes RoHS-compliant construction with AEC-Q101 qualification - distinguishing it from commercial-grade "E3" variants. The "_A/I" indicates packaging: "A" is the revision code, and "I" specifies 13-inch tape-and-reel delivery (3200 units per reel). This suffix confirms suitability for automotive production and traceability per IATF 16949 requirements.
Can SMB10J11AHE3_A/I replace SMBJ11AHE3_A/I in an existing design without layout changes?
Yes - SMB10J11AHE3_A/I shares identical SMB (DO-214AA) package dimensions, pinout, and solder pad layout with SMBJ11AHE3_A/I, enabling drop-in replacement. However, due to its higher 1000 W rating and lower clamping voltage, thermal and electrical margins improve. No PCB modifications are needed, but system-level surge testing should verify performance under actual load-dump conditions.
SMB10J11AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 54.9A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J11AHE3_A/I FAQ
1.How can I place an order for SMB10J11AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J11AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J11AHE3_A/I reliable?
The price and inventory of SMB10J11AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J11AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMB10J11AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J11AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J11AHE3_A/I?
SMB10J11AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J11AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J11AHE3_A/I?
For technical support, including SMB10J11AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J11AHE3_A/I requirements.
6.How does Aetrix verify that SMB10J11AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMB10J11AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J11AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMB10J11AHE3_A/I?
All SMB10J11AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J11AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J11AHE3_A/I part is unused and in its original packaging.
Return procedure for SMB10J11AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J11AHE3_A/I Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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