Vishay General Semiconductor - Diodes Division SMB10J11AHM3/I
- Part No.:
- SMB10J11AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J11AHM3/I.pdf
- Description:
- TVS DIODE 11VWM 18.2VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMB10J11AHM3/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on DC power rails and signal lines. It features a 11 V stand-off voltage (VWM), 12.2–13.5 V breakdown voltage (VBR) at 1 mA, 18.2 V clamping voltage (VC) at 54.9 A peak pulse current (IPPM), and 1000 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed in automotive power supply inputs and industrial sensor interfaces.
For engineers reviewing the SMB10J11AHM3/I datasheet, SMB10J11AHM3/I pinout, SMB10J11AHM3/I application, or SMB10J11AHM3/I equivalent, key selection criteria include its AEC-Q101 qualification, halogen-free RoHS compliance (HM3 suffix), low clamping ratio (VC/VBR ≈ 1.45), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents <1 µA leakage at 11 V (VWM), then rapidly transitions to low-impedance conduction when transients exceed VBR (12.2–13.5 V). Its glass-passivated junction ensures stable avalanche behavior and fast response (<1 ns), while the SMB package delivers 72 °C/W junction-to-ambient thermal resistance.
Designed for unidirectional operation (cathode-banded), SMB10J11AHM3/I supports single-polarity rail protection only - not bidirectional or AC line applications. It meets J-STD-020 MSL Level 1 (260 °C reflow peak), withstands 100 A non-repetitive forward surge (IFSM), and is rated for -55 °C to +150 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - maximum continuous reverse operating voltage before significant leakage; sets safe DC rail margin |
| VBR (min/max) | 12.2 V / 13.5 V at 1 mA - defines precise avalanche initiation window for predictable clamping onset |
| VC @ IPPM | 18.2 V at 54.9 A - clamping voltage during 10/1000 µs surge; determines protected circuit's maximum transient exposure |
| PPPM | 1000 W - peak pulse power handling per 10/1000 µs waveform; enables robust protection against IEC 61000-4-5 surges |
| ID @ VWM | ≤5.0 µA - ultra-low reverse leakage ensures minimal standby power loss in battery-powered systems |
| TJ max. | +150 °C - extended junction temperature rating supports under-hood automotive and high-ambient industrial use |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode indicated by band. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); terminals are matte tin-plated, solderable per J-STD-002.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes shunt path during overvoltage events |
| Cathode (banded end) | High-side surge input terminal | Connected to protected line (e.g., 12 V rail); conducts avalanche current to anode when V > VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements - enables use in ADAS power supplies and body control modules |
| Halogen-free & RoHS-compliant (HM3) | Meets environmental compliance mandates without compromising surge performance or thermal reliability |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage overshoot during clamping - critical for protecting 12 V logic ICs and MOSFET gate drivers |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles - eliminates pre-baking and supports high-yield automated assembly |
| Glass-passivated junction | Ensures stable, repeatable avalanche characteristics over lifetime and temperature - reduces parameter drift in harsh environments |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: 12 V battery feed to infotainment head unit exposed to load-dump transients up to 35 V. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between VIN and GND, clamping surges before they reach DC-DC converter input. Use Value: Limits transient voltage to ≤18.2 V, preventing damage to downstream buck controller rated for 20 V absolute max. |
Use Scenario: 4–20 mA current loop interface in factory automation PLC module subjected to EFT bursts. IC Role / Device Role / Timing Role: TVS mounted across signal and return lines at connector entry point to divert fast transients. Use Value: Sub-1 ns response and 18.2 V clamping protect precision op-amps and ADC front-ends from latch-up or parametric shift. |
| Telecom DC Power Rail Protection | Consumer Device USB Port Protection |
|
Use Scenario: -48 V telecom power distribution board experiencing switching noise and lightning-induced surges. IC Role / Device Role / Timing Role: Paired unidirectional TVS devices (anode-to-rail, cathode-to-GND) on each output of redundant DC supply. Use Value: 1000 W PPPM rating sustains multiple 10/1000 µs surges without degradation - extends system field life. |
Use Scenario: USB Type-C port on portable speaker exposed to ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: SMB10J11AHM3/I placed on VBUS line upstream of USB controller to clamp ESD and contact discharge. Use Value: 18.2 V clamping prevents VBUS overvoltage from exceeding USB 2.0 spec limit (6.5 V typical) at the PHY interface. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ11A-E3/52 | Same VWM (11 V), VBR (12.2–13.5 V), VC (18.2 V), but commercial-grade (E3), not AEC-Q101 qualified | Lacks automotive qualification; suitable for industrial/commercial power supplies where AEC-Q101 is not mandated | Select when cost sensitivity outweighs automotive reliability requirements and halogen-free compliance is optional |
| SMB10J11AHM3/B | Identical electrical specs and AEC-Q101/HM3 compliance; differs only in packaging - 750-piece 7" reel vs. 3200-piece 13" reel (I) | No functional difference; choice driven solely by production volume and SMT line feeder compatibility | Select SMB10J11AHM3/I for high-volume automated assembly requiring large reels and optimized changeover efficiency |
Compared with SMBJ11A-E3/52 and SMB10J11AHM3/B, SMB10J11AHM3/I uniquely combines AEC-Q101 qualification, halogen-free construction, and 13" reel packaging - making it optimal for Tier-1 automotive manufacturing with strict environmental and logistics requirements.
Availability
SMB10J11AHM3/I is available at Aetrix Electronics and suitable for automotive power supply protection, industrial sensor interface hardening, and telecom DC rail surge suppression requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMB10J11AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS, MOSFETs, and optoelectronics with emphasis on reliability and application-specific performance.
The SMB10JxxA series targets high-power-density transient protection in space-constrained automotive and industrial designs - engineered for low clamping, fast response, and robust thermal performance in SMB footprint.
FAQ
What is the clamping voltage of SMB10J11AHM3/I at its rated peak pulse current?
The SMB10J11AHM3/I has a maximum clamping voltage (VC) of 18.2 V at 54.9 A peak pulse current (IPPM) under 10/1000 µs waveform conditions. This value is measured per ANSI/IEEE C62.35 standards and defines the upper voltage limit imposed on protected circuitry during surge events - a critical parameter for ensuring downstream ICs remain within their absolute maximum ratings. The SMB10J11AHM3/I maintains this clamping performance across its full operating temperature range.
Is SMB10J11AHM3/I suitable for bidirectional signal line protection?
No, SMB10J11AHM3/I is a unidirectional TVS diode, identified by its cathode band marking and specified only for single-polarity protection (anode-to-ground configuration). It cannot suppress negative-going transients on AC or differential lines. For bidirectional protection, Vishay offers the SMB8J11CA variant - which shares the same VWM and clamping but supports symmetrical ±11 V standoff. Using SMB10J11AHM3/I on bidirectional signals risks reverse breakdown failure.
Does SMB10J11AHM3/I meet automotive qualification standards?
Yes, SMB10J11AHM3/I is AEC-Q101 qualified, verified per the full stress test suite including HTGB, H3TRB, TC, and ESD. The "HM3" suffix confirms halogen-free, RoHS-compliant construction, and the "I" reel code denotes 3200-piece 13" tape-and-reel packaging - all aligned with automotive production requirements. This qualification makes SMB10J11AHM3/I appropriate for engine control units, body electronics, and ADAS power domains.
What is the thermal resistance of SMB10J11AHM3/I, and how does it affect layout?
SMB10J11AHM3/I has a typical junction-to-ambient thermal resistance (RθJA) of 72 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout per Vishay spec; reducing pad area increases RθJA and risks thermal runaway during repeated surges. Layout must maintain ≥5.0 mm² copper per terminal and avoid thermal isolation - critical for sustaining 1000 W PPPM in automotive under-hood environments.
How does the leakage current of SMB10J11AHM3/I compare to similar 11 V TVS diodes?
At its 11 V stand-off voltage (VWM), SMB10J11AHM3/I exhibits ≤5.0 µA maximum reverse leakage current at 25 °C - matching industry-leading performance for 11 V unidirectional TVS devices. This low leakage minimizes quiescent power loss in always-on automotive modules (e.g., CAN wake-up circuits) and preserves battery life in portable industrial tools. Competing 11 V TVS parts often specify 10–50 µA leakage, making SMB10J11AHM3/I preferable for ultra-low-power designs.
SMB10J11AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 54.9A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J11AHM3/I FAQ
1.How can I place an order for SMB10J11AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J11AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J11AHM3/I reliable?
The price and inventory of SMB10J11AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J11AHM3/I is usually 5 days.
3.What payment methods are accepted for SMB10J11AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J11AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J11AHM3/I?
SMB10J11AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J11AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J11AHM3/I?
For technical support, including SMB10J11AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J11AHM3/I requirements.
6.How does Aetrix verify that SMB10J11AHM3/I is sourced from the original manufacturer or authorized distributors?
All SMB10J11AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J11AHM3/I meets industry standards.
7.What is the process for return or replacement of SMB10J11AHM3/I?
All SMB10J11AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J11AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J11AHM3/I part is unused and in its original packaging.
Return procedure for SMB10J11AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J11AHM3/I Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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