Vishay General Semiconductor - Diodes Division SMB10J12AHE3_A/I
- Part No.:
- SMB10J12AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J12AHE3_A/I.pdf
- Description:
- TVS DIODE 12VWM 19.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:3,300
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMB10J12AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on DC power rails and signal lines. It features a 12 V stand-off voltage (VWM), 13.3–14.7 V breakdown voltage (VBR) at 1 mA, 19.9 V clamping voltage (VC) at 50.3 A peak pulse current (IPPM), and 1000 W peak pulse power (PPPM) with 10/1000 µs waveform - used in automotive power supply input stages and industrial sensor interface protection.
For engineers reviewing the SMB10J12AHE3_A/I datasheet, SMB10J12AHE3_A/I pinout, SMB10J12AHE3_A/I application, or SMB10J12AHE3_A/I equivalent, key selection criteria include AEC-Q101 qualification, unidirectional polarity with cathode band marking, low incremental surge resistance, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a clamping device that remains non-conductive below VWM = 12 V and rapidly transitions to low-impedance conduction above VBR to limit transient overvoltages. Its glass-passivated junction ensures stable leakage (<5 µA at VWM) and repeatable breakdown behavior under repetitive surge stress.
Designed per ANSI/IEEE C62.35 standards, it delivers 1000 W peak pulse power handling with 10/1000 µs waveform, thermal resistance RθJA = 72 °C/W, and junction temperature range of –55 °C to +150 °C - enabling robust operation in under-hood automotive environments and industrial control cabinets.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12 V - maximum continuous reverse operating voltage before significant leakage begins |
| VBR min/max | 13.3 V / 14.7 V at IT = 1 mA - guaranteed breakdown threshold for reliable clamping activation |
| VC @ IPPM | 19.9 V at 50.3 A - clamped voltage during 1000 W surge, limiting downstream IC stress |
| PPPM | 1000 W (10/1000 µs) - energy-handling capacity for automotive load-dump and ISO 7637-2 pulse 5a events |
| IFSM | 100 A (8.3 ms half-sine) - surge current rating for short-duration forward faults |
| TJ max | +150 °C - enables use in high-ambient-temperature locations like engine control units |
| Polarity | Unidirectional - cathode marked with band; blocks reverse current until breakdown |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards; meets UL 94 V-0 flammability rating and MSL level 1 (peak reflow 260 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / low-side connection | Connected to ground or lower-potential rail in clamping configuration |
| Cathode | Reverse-biased terminal / protected line connection | Marked with color band; connects to line being protected (e.g., 12 V battery rail) |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
| Glass passivated junction | Ensures stable VBR tolerance and long-term parameter stability under thermal stress |
| Low profile SMB package | Enables high-density PCB layouts and compatibility with standard SMT pick-and-place equipment |
| MSL Level 1 | Allows unlimited floor life and single-reflow processing without dry-pack requirements |
| RoHS-compliant & halogen-free option | HE3 suffix denotes RoHS compliance; HM3 variant adds halogen-free molding compound |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump transients per ISO 7637-2 Pulse 5a. IC Role / Device Role: Primary clamping element placed between battery rail and upstream fuse or DC-DC converter input. Use Value: Limits transient voltage to ≤19.9 V during 1000 W surges, preventing damage to downstream PMICs and microcontrollers. | Use Scenario: Shielding analog outputs of pressure/temperature sensors from ESD and inductive switching noise in factory automation systems. IC Role / Device Role: Unidirectional TVS placed across sensor output and ground, referenced to local ground plane. Use Value: Clamps fast-rising transients (e.g., IEC 61000-4-2 ±8 kV contact discharge) while maintaining <5 µA leakage at 12 V nominal operation. |
| Telecom DC Power Feeds | Consumer Appliance Motor Drive Inputs |
Use Scenario: Safeguarding PoE-powered network switches and base stations from lightning-induced surges on 48 V DC input lines. IC Role / Device Role: First-line transient suppressor on primary DC input before DC-DC regulation and hot-swap controller. Use Value: Withstands repeated 10/1000 µs surges up to 1000 W without degradation, supporting telecom equipment MTBF requirements. | Use Scenario: Protecting BLDC motor driver inputs in smart washing machines from back-EMF spikes during commutation. IC Role / Device Role: Mounted directly at motor driver IC power pins to clamp inductive kickback before reaching gate drivers. Use Value: Fast response time and low clamping voltage reduce stress on 600 V MOSFETs, extending lifetime in high-cycle appliance applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12A-E3/52 | Same SMB package, identical VWM/VBR/VC specs, but commercial-grade (non-AEC-Q101) | Lacks automotive qualification; suitable for industrial/commercial designs without automotive certification needs | Select when AEC-Q101 is not required and cost sensitivity outweighs qualification assurance |
| 1.5SMC12A | Higher-power SMC package (1500 W PPPM), same 12 V VWM, but larger footprint and higher RθJA (50 °C/W) | Better energy handling but requires more board space; less suitable for dense automotive modules | Choose when surge energy exceeds 1000 W or thermal margin is constrained by ambient conditions |
Compared with SMBJ12A-E3/52, SMB10J12AHE3_A/I adds AEC-Q101 validation for automotive deployment; versus 1.5SMC12A, it trades peak power for compact SMB layout and lower thermal resistance in confined spaces.
Availability
SMB10J12AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom DC power feeds requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMB10J12AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.
The SMB10J series belongs to Vishay's TRANSZORB® high-power TVS family, engineered specifically for automotive and industrial surge immunity where AEC-Q101 compliance, low clamping voltage, and automated assembly compatibility are critical.
FAQ
What is the clamping voltage of SMB10J12AHE3_A/I at its rated peak pulse current?
The SMB10J12AHE3_A/I has a maximum clamping voltage (VC) of 19.9 V when subjected to its rated peak pulse current (IPPM) of 50.3 A using the 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and ensures predictable overvoltage limiting during surge events. The SMB10J12AHE3_A/I maintains this clamping performance across its specified junction temperature range of –55 °C to +150 °C.
Is SMB10J12AHE3_A/I qualified for automotive applications?
Yes, SMB10J12AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's documentation (Document Number: 88422, Revision: 09-Jan-2024). The HE3 suffix explicitly denotes RoHS-compliant and AEC-Q101 qualified construction. This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and ESD, making SMB10J12AHE3_A/I suitable for under-hood and chassis-mounted automotive electronics.
What does the "_A/I" suffix mean in SMB10J12AHE3_A/I?
The "_A/I" suffix in SMB10J12AHE3_A/I indicates the revision code ("A") and packaging format ("I" = 13-inch tape and reel, 3200 units per reel). Per Vishay's ordering information table, "I" corresponds to 13" diameter plastic tape and reel delivery mode, while "HE3" confirms RoHS-compliant and AEC-Q101 qualified construction. The full part number SMB10J12AHE3_A/I uniquely identifies this specific manufacturing and packaging variant.
How does SMB10J12AHE3_A/I differ from bidirectional variants like SMB8J12CA?
SMB10J12AHE3_A/I is unidirectional with cathode band marking and 1000 W peak pulse power, whereas SMB8J12CA is bidirectional with symmetrical breakdown and 800 W rating. The unidirectional SMB10J12AHE3_A/I provides lower clamping voltage in DC applications and supports higher surge current (50.3 A vs. 40.2 A), making it preferred for battery-rail protection. SMB10J12AHE3_A/I also carries AEC-Q101 qualification, unlike many SMB8J variants.
What PCB pad layout is recommended for optimal thermal and surge performance of SMB10J12AHE3_A/I?
Vishay specifies mounting SMB10J12AHE3_A/I on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal to achieve rated 1000 W peak pulse power and thermal resistance RθJA = 72 °C/W. Minimum pad dimensions are 0.060" × 0.086" (1.52 mm × 2.18 mm); exceeding these improves heat dissipation and surge endurance. Use internal ground planes and thermal vias beneath pads for enhanced thermal management in high-reliability SMB10J12AHE3_A/I deployments.
SMB10J12AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 50.3A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J12AHE3_A/I FAQ
1.How can I place an order for SMB10J12AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J12AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J12AHE3_A/I reliable?
The price and inventory of SMB10J12AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J12AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMB10J12AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J12AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J12AHE3_A/I?
SMB10J12AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J12AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J12AHE3_A/I?
For technical support, including SMB10J12AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J12AHE3_A/I requirements.
6.How does Aetrix verify that SMB10J12AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMB10J12AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J12AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMB10J12AHE3_A/I?
All SMB10J12AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J12AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J12AHE3_A/I part is unused and in its original packaging.
Return procedure for SMB10J12AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J12AHE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

