My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMB10J12AHE3_B/I
- Part No.:
- SMB10J12AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J12AHE3_B/I.pdf
- Description:
- 1KW,12V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,675
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMB10J12AHE3_B/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection with 1000 W peak pulse power (10/1000 μs), 12 V stand-off voltage (VWM), and 19.9 V clamping voltage at 50.3 A peak pulse current. It is AEC-Q101 qualified and used to protect automotive sensor signal lines and MOSFET gate drivers against inductive switching transients.
For engineers reviewing the SMB10J12AHE3_B/I datasheet, SMB10J12AHE3_B/I pinout, SMB10J12AHE3_B/I application, or SMB10J12AHE3_B/I equivalent, key selection criteria include clamping performance under 10/1000 μs surge, AEC-Q101 qualification status, unidirectional polarity, thermal resistance (RθJA = 72 °C/W), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode employs a glass-passivated silicon junction optimized for fast response (<1 ps) and low incremental surge resistance, enabling effective clamping of fast-rising transients induced by inductive load switching. Its unidirectional configuration provides forward conduction capability with 3.5 V forward voltage at 50 A, supporting bidirectional protection schemes when paired with complementary devices.
The device operates across -55 °C to +150 °C junction temperature range and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its SMB package features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, and its construction satisfies UL 94 V-0 flammability rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR min/max | 13.3 V / 14.7 V at 1.0 mA - breakdown threshold range defining turn-on consistency |
| VC @ IPPM | 19.9 V at 50.3 A - clamping voltage limiting protected circuit stress during 10/1000 μs surge |
| PPPM | 1000 W - peak pulse power handling capacity under standardized 10/1000 μs waveform |
| ID @ VWM | 5.0 μA - reverse leakage ensuring minimal standby power loss and signal integrity |
| TJ max | +150 °C - maximum junction temperature enabling operation in under-hood automotive environments |
| RθJA | 72 °C/W - thermal resistance from junction to ambient on standard 0.2" × 0.2" copper pads |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking on terminal D. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); recommended pad layout: 5.59 mm × 2.18 mm minimum per terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unmarked end) | Forward current entry / surge return path | Connected to protected line ground or low-side reference; enables conduction during positive transients |
| Cathode (banded end) | Clamping node / surge sink | Connected to protected IC input or MOSFET gate; sinks surge current to ground when VAK exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated reliability for automotive powertrain and body electronics requiring zero-failure field performance |
| Glass-passivated junction | Enhanced moisture resistance and long-term stability under thermal cycling and humidity exposure |
| MSL Level 1 rating | Enables single-reflow assembly without pre-baking, reducing manufacturing cost and process complexity |
| Low Rsurge | Minimizes voltage overshoot during high-di/dt events, improving protection margin for sensitive 12 V logic interfaces |
| UL 94 V-0 molding compound | Meets flame-retardancy requirements for enclosed automotive and industrial control modules |
Applications
| Automotive Sensor Protection | Industrial Motor Drive I/O |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) in engine control units from load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and chassis ground to clamp transients before they reach IC ESD structures. Use Value: Limits clamped voltage to 19.9 V, staying below 24 V rail tolerance and preventing latch-up in 5 V/3.3 V interface ICs. | Use Scenario: Shielding PLC digital input terminals from inductive kickback generated by solenoid and relay coils in factory automation systems. IC Role / Device Role / Timing Role: Primary surge shunt on 24 V DC input lines, absorbing up to 1000 W of energy without degradation over >10,000 surges. Use Value: Maintains <5 μA leakage at 12 V, preserving high-impedance sensing accuracy while surviving repeated 100 A surge events. |
| Automotive Power Distribution | Consumer Power Adapter Input Stage |
Use Scenario: Safeguarding fuse box monitoring circuits and smart junction box microcontrollers against battery reverse connection and jump-start spikes. IC Role / Device Role / Timing Role: Front-end protection element on 12 V supply rails feeding PMICs and system controllers. Use Value: Withstands 100 A non-repetitive forward surge (IFSM), enabling robustness against accidental polarity reversal during service. | Use Scenario: Guarding AC-DC adapter primary-side controller ICs and optocoupler feedback paths from lightning-induced surges on mains input. IC Role / Device Role / Timing Role: Secondary-level transient suppressor downstream of MOVs, providing precise clamping where fast response is critical. Use Value: Achieves sub-1 ps response time and 19.9 V clamping, reducing stress on 25 V-rated primary-side FETs and gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12AHE3_A/H | Same VWM (12 V), identical SMB package, but rated for 600 W PPPM (vs. 1000 W) | Limited to lower-energy surge environments (e.g., consumer USB ports vs. automotive 12 V bus) | Select when cost sensitivity outweighs need for full 1000 W surge margin |
| 1.5SMC12AH | Same electrical specs but in larger SMC (DO-214AB) package; RθJA = 40 °C/W (vs. 72 °C/W) | Better thermal performance allows higher sustained surge duty cycles in confined spaces | Choose when board space permits larger footprint and thermal management is prioritized |
Compared with SMBJ12AHE3_A/H and 1.5SMC12AH, SMB10J12AHE3_B/I delivers the highest surge power rating in the smallest qualified SMB footprint, making it optimal for space-constrained AEC-Q101 designs where 1000 W clamping headroom is required without thermal derating penalties.
Availability
SMB10J12AHE3_B/I is available at Aetrix Electronics and suitable for automotive ECU design, industrial PLC I/O protection, and consumer power adapter development requiring stable component supply, AEC-Q101 compliance, and high-reliability transient suppression.
Supply support for SMB10J12AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on automotive-grade reliability and high-power density packaging.
The SMB10J series belongs to Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh automotive and industrial environments where AEC-Q101 validation and consistent clamping performance are mandatory.
FAQ
What is the clamping voltage of SMB10J12AHE3_B/I at its rated peak pulse current?
The SMB10J12AHE3_B/I has a maximum clamping voltage (VC) of 19.9 V at its specified peak pulse current (IPPM) of 50.3 A under the 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and ensures protected downstream components remain within safe voltage limits during surge events. The SMB10J12AHE3_B/I maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMB10J12AHE3_B/I suitable for automotive applications?
Yes, SMB10J12AHE3_B/I is AEC-Q101 qualified and explicitly designated for automotive use with the "HE3" suffix indicating RoHS-compliant and AEC-Q101 qualified construction. It meets MSL Level 1, operates from -55 °C to +150 °C, and is validated for under-hood environments including engine control units and body electronics. The SMB10J12AHE3_B/I data sheet confirms qualification per AEC-Q101 stress test conditions.
What does the "B/I" suffix mean in SMB10J12AHE3_B/I?
The "B/I" suffix in SMB10J12AHE3_B/I indicates packaging configuration: "B" denotes the revision code (Revision B per Vishay documentation), and "I" specifies the reel size - 13-inch diameter plastic tape and reel containing 3200 units. This differs from "H" (7-inch reel, 750 units). The "HE3" portion confirms RoHS compliance and AEC-Q101 qualification. All electrical and thermal specifications of SMB10J12AHE3_B/I match the base SMB10J12A device.
How does SMB10J12AHE3_B/I compare to bidirectional TVS diodes like SMB8J12CA?
SMB10J12AHE3_B/I is unidirectional with 1000 W peak pulse power, while SMB8J12CA is bidirectional with 800 W rating and symmetric breakdown. The SMB10J12AHE3_B/I offers higher surge capacity and forward conduction capability (VF = 3.5 V at 50 A), making it suitable for DC-biased lines like automotive 12 V supplies. In contrast, SMB8J12CA supports AC-coupled or floating signal lines. Both share the same SMB package and AEC-Q101 qualification, but SMB10J12AHE3_B/I is not interchangeable without circuit redesign.
What is the thermal resistance of SMB10J12AHE3_B/I, and how does it affect layout?
The SMB10J12AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 72 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes standard PCB layout - reducing pad area increases thermal resistance and risks junction overheating during repeated surges. To maintain reliability, designers must adhere to Vishay's recommended mounting pad layout and avoid excessive trace length or isolation. The SMB10J12AHE3_B/I datasheet provides exact dimensions in inches and millimeters for verification.
SMB10J12AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 50.3A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J12AHE3_B/I FAQ
1.How can I place an order for SMB10J12AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J12AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J12AHE3_B/I reliable?
The price and inventory of SMB10J12AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J12AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMB10J12AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J12AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J12AHE3_B/I?
SMB10J12AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J12AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J12AHE3_B/I?
For technical support, including SMB10J12AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J12AHE3_B/I requirements.
6.How does Aetrix verify that SMB10J12AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMB10J12AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J12AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMB10J12AHE3_B/I?
All SMB10J12AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J12AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J12AHE3_B/I part is unused and in its original packaging.
Return procedure for SMB10J12AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J12AHE3_B/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
