Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMB10J16AHM3_A/H

Part No.:
SMB10J16AHM3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMB10J16AHM3_A/H.pdf
Description:
TVS DIODE 16VWM 26VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,213

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMB10J16AHM3_A/H from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on DC power rails and signal lines. It features a 16 V stand-off voltage (VWM), 1000 W peak pulse power (10/1000 µs), clamping voltage of 26.0 V at 38.5 A peak pulse current, and AEC-Q101 qualification for automotive electronics.

For engineers reviewing the SMB10J16AHM3_A/H datasheet, SMB10J16AHM3_A/H pinout, SMB10J16AHM3_A/H application, or SMB10J16AHM3_A/H equivalent, this device is selected for robust overvoltage protection in automotive ECUs, industrial sensor interfaces, and 12 V/24 V board-level power inputs where low clamping voltage, fast response (<1 ns), and halogen-free RoHS compliance are required.

Technical Context

This TVS diode operates as a clamping-type protector using an avalanche breakdown junction. Its glass-passivated silicon chip delivers sub-nanosecond response to transients and maintains stable VBR (17.8–19.7 V) at 1 mA test current, with <1.0 µA reverse leakage at 16 V stand-off.

Thermally, it supports operation from –55 °C to +150 °C junction temperature, with RθJA = 72 °C/W (on 5.0 mm × 5.0 mm copper pads) and RθJL = 20 °C/W. The HM3 suffix confirms halogen-free, RoHS-compliant construction and AEC-Q101 qualification per stress test conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 16 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 12 V automotive systems.
VBR min/max 17.8 V / 19.7 V at 1 mA - Confirmed breakdown threshold range ensures reliable triggering without premature conduction.
VC @ IPPM 26.0 V at 38.5 A - Clamping voltage under 10/1000 µs surge; limits downstream IC stress to safe levels during load dump.
PPPM 1000 W - Peak pulse power rating; sustains 1000 W transient energy without failure when mounted per recommended pad layout.
IFSM 100 A - Non-repetitive forward surge current (8.3 ms half-sine); supports high-current inductive switching events.
Junction Temp –55 °C to +150 °C - Enables deployment in engine bay, powertrain, and industrial control environments.
Qualification AEC-Q101 qualified - Validated for automotive reliability including HTOL, TC, UHAST, and ESD testing.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by color band.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / surge return path Connected to protected line (e.g., battery rail); conducts during positive transients when cathode is biased higher.
Cathode Clamping reference / surge sink Connected to ground or lower-potential reference; avalanche conduction diverts surge current to ground when VAK exceeds VBR.

Key Features

Feature Design Value
Halogen-free & RoHS-compliant HM3 suffix confirms full compliance with JEDEC J-STD-201 Class 2 whisker resistance and environmental regulations.
AEC-Q101 qualification Validated for automotive use including temperature cycling, high-temperature operating life, and unbiased HAST.
Low incremental surge resistance Enables tight clamping (26.0 V at 38.5 A), minimizing voltage overshoot on sensitive 12 V microcontroller power supplies.
Glass-passivated junction Ensures long-term stability of VBR and leakage performance across thermal and humidity stress conditions.
MSL Level 1 (260 °C) Compatible with standard lead-free reflow profiles without moisture sensitivity concerns or baking requirements.

Applications

Automotive Body Control Module (BCM) Industrial CAN Transceiver Protection

Use Scenario: Protecting 12 V supply input of BCM against ISO 7637-2 Pulse 1 (inductive switch-off) and Pulse 5a (load dump).

IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between battery rail and input filter capacitor.

Use Value: Limits transient voltage to ≤26.0 V during 1000 W surges, preventing damage to LDOs and MCU power domains.

Use Scenario: Safeguarding CAN_H/CAN_L lines in factory automation nodes exposed to motor drive EMI and relay switching noise.

IC Role / Device Role / Timing Role: Bidirectional TVS (e.g., SMB8J16CA variant) used across differential pair; SMB10J16AHM3_A/H applied on single-ended VCC rail.

Use Value: Sub-ns response clamps fast-rising transients before they couple into CAN PHY, preserving bus integrity.

12 V DC-DC Converter Input Stage Automotive Sensor Signal Conditioning

Use Scenario: Input surge protection for buck converter feeding ADAS camera module power rail.

IC Role / Device Role / Timing Role: Primary TVS on 12 V input, upstream of input capacitor and EMI filter.

Use Value: Withstands 100 A surge (8.3 ms) and 1000 W pulses while maintaining <1 µA leakage at 16 V, avoiding quiescent current penalty.

Use Scenario: Protecting analog outputs (e.g., 0–5 V throttle position sensor) from wiring harness coupling and electrostatic discharge.

IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS on signal line to ground, with cathode tied to signal and anode to GND.

Use Value: Clamps ESD events to <26.0 V without distorting small-signal accuracy due to minimal leakage and stable VBR.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMB10J16AHE3_B/H Same electrical specs and SMB package; RoHS-compliant but not halogen-free (E3 vs HM3). Lacks halogen-free certification; suitable for commercial/industrial, not automotive AEC-Q101 programs requiring HM3. Select SMB10J16AHM3_A/H when halogen-free compliance and AEC-Q101 are mandatory for Tier 1 automotive sourcing.
SMBJ16A-E3/52 Same VWM/VC, but rated for 600 W PPPM (vs 1000 W); different thermal derating curve and RθJA. Lower surge handling capacity; insufficient for ISO 7637-2 Pulse 5a load dump in 12 V systems. Choose SMB10J16AHM3_A/H where full 1000 W capability and AEC-Q101 are required; SMBJ16A-E3/52 fits lower-energy signal-line roles.

Compared with SMB10J16AHE3_B/H and SMBJ16A-E3/52, SMB10J16AHM3_A/H uniquely combines 1000 W surge rating, AEC-Q101 qualification, and halogen-free construction-enabling first-tier automotive deployment without design compromise or secondary qualification.

Availability

SMB10J16AHM3_A/H is available at Aetrix Electronics and suitable for automotive body electronics, industrial power input stages, and sensor interface protection requiring stable component supply, long-lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for SMB10J16AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power density, and automotive-grade validation.

The SMB10J series is engineered for high-power-density transient suppression in space-constrained automotive and industrial PCBs, delivering 1000 W surge capability in the compact SMB footprint while meeting AEC-Q101 and halogen-free mandates.

FAQ

What is the clamping voltage of SMB10J16AHM3_A/H at its rated peak pulse current?

The SMB10J16AHM3_A/H has a maximum clamping voltage (VC) of 26.0 V at 38.5 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured and guaranteed per Vishay Document Number 88422, ensuring predictable overvoltage limiting during surge events on 12 V systems.

Is SMB10J16AHM3_A/H suitable for automotive applications?

Yes, SMB10J16AHM3_A/H is AEC-Q101 qualified and carries the HM3 suffix indicating halogen-free, RoHS-compliant construction validated for automotive use. It meets stress test requirements for temperature cycling, high-temperature operating life, and unbiased HAST-making SMB10J16AHM3_A/H appropriate for engine control units, body modules, and ADAS power rails.

What does the "HM3" suffix mean in SMB10J16AHM3_A/H?

The "HM3" suffix in SMB10J16AHM3_A/H denotes halogen-free, RoHS-compliant packaging with JESD 201 Class 2 whisker resistance and AEC-Q101 qualification. It distinguishes this variant from E3 (RoHS only) and HE3 (AEC-Q101 + RoHS but not halogen-free), confirming full compliance for stringent automotive Tier 1 supply chains.

How does SMB10J16AHM3_A/H differ from SMBJ16A in surge handling capability?

SMB10J16AHM3_A/H is rated for 1000 W peak pulse power (10/1000 µs), whereas SMBJ16A is rated for 600 W. This 67% higher surge capacity enables SMB10J16AHM3_A/H to withstand ISO 7637-2 Pulse 5a load dump events in 12 V automotive systems-where SMBJ16A would risk thermal runaway or parametric shift.

What is the mounting pad layout recommendation for SMB10J16AHM3_A/H?

Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad area per terminal for SMB10J16AHM3_A/H to achieve rated thermal performance (RθJA = 72 °C/W). Deviation reduces surge current capability and accelerates junction temperature rise; the pad layout is critical to sustaining 1000 W pulses without degradation.

SMB10J16AHM3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
16V
Voltage - Breakdown (Min):
17.8V
Voltage - Clamping (Max) @ Ipp:
26V
Current - Peak Pulse (10/1000µs):
38.5A
Power - Peak Pulse:
1000W (1kW)
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMB10J16AHM3_A/H FAQ

1.How can I place an order for SMB10J16AHM3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMB10J16AHM3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMB10J16AHM3_A/H reliable?

The price and inventory of SMB10J16AHM3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J16AHM3_A/H is usually 5 days.

3.What payment methods are accepted for SMB10J16AHM3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J16AHM3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMB10J16AHM3_A/H?

SMB10J16AHM3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMB10J16AHM3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMB10J16AHM3_A/H?

For technical support, including SMB10J16AHM3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J16AHM3_A/H requirements.

6.How does Aetrix verify that SMB10J16AHM3_A/H is sourced from the original manufacturer or authorized distributors?

All SMB10J16AHM3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J16AHM3_A/H meets industry standards.

7.What is the process for return or replacement of SMB10J16AHM3_A/H?

All SMB10J16AHM3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J16AHM3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMB10J16AHM3_A/H part is unused and in its original packaging.

Return procedure for SMB10J16AHM3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMB10J16AHM3_A/H Tags

  • SMB10J16AHM3_A/H
  • SMB10J16AHM3_A/H PDF
  • SMB10J16AHM3_A/H Datasheet
  • SMB10J16AHM3_A/H Specifications
  • SMB10J16AHM3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMB10J16AHM3_A/H
  • Buy SMB10J16AHM3_A/H
  • SMB10J16AHM3_A/H Price
  • SMB10J16AHM3_A/H Distributor
  • SMB10J16AHM3_A/H Supplier
  • SMB10J16AHM3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER